PANASONIC MA2J732

Schottky Barrier Diodes (SBD)
MA2J732 (MA732)
Silicon epitaxial planar type
Unit: mm
1.25±0.1
For switching
For wave detection
0.7±0.1
0.35±0.1
1
1.7±0.1
2
0.5±0.1
Symbol
Rating
Unit
VR
30
V
Peak reverse voltage
VRM
30
V
Peak forward current
IFM
150
mA
Forward current (DC)
IF
30
mA
Junction temperature
Tj
125
°C
Storage temperature
Tstg
−55 to +125
°C
(0.15)
Parameter
0 to 0.1
■ Absolute Maximum Ratings Ta = 25°C
Reverse voltage (DC)
0.16+0.1
–0.06
5°
0.4±0.1
5°
• Low forward voltage VF, optimum for low voltage rectification
• Low VF type of MA3X704A (MA704A)
• Optimum for high frequency rectification because of its short reverse recovery time (trr)
• S-Mini type 2-pin package
2.5±0.2
0 to 0.1
■ Features
1 : Anode
2 : Cathode
EIAJ : SC-90A
SMini2-F1 Package
Marking Symbol: 2C
■ Electrical Characteristics Ta = 25°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Reverse current (DC)
IR
VR = 30 V
30
µA
Forward voltage (DC)
VF1
IF = 1 mA
0.3
V
VF2
IF = 30 mA
Terminal capacitance
Ct
VR = 1 V, f = 1 MHz
1.5
pF
Reverse recovery time *
trr
IF = IR = 10 mA
Irr = 1 mA, RL = 100 Ω
1.0
ns
Detection efficiency
η
Vin = 3 V(peak) , f = 30 MHz
RL = 3.9 kΩ, CL = 10 pF
65
%
1.0
Note) 1. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
and the leakage of current from the operating equipment.
2. Rated input/output frequency: 2 GHz
3. *: trr measuring instrument
Bias Application Unit N-50BU
Input Pulse
tp
tr
10%
A
VR
Pulse Generator
(PG-10N)
Rs = 50 Ω
90%
tp = 2 µs
tr = 0.35 ns
δ = 0.05
Wave Form Analyzer
(SAS-8130)
Ri = 50 Ω
Output Pulse
t
IF
trr
t
Irr = 1 mA
IF = 10 mA
IR = 10 mA
RL = 100 Ω
Note) The part number in the parenthesis shows conventional part number.
Publication date: August 2001
SKH00016AED
1
MA2J732
IF  V F
103
Reverse current IR (µA)
Forward current IF (mA)
Ta = 125°C
VF  Ta
1.0
Ta = 125°C
75°C 25°C
102
IR  V R
104
−20°C
10
1
10−1
0.8
75°C
102
25°C
10
1
Forward voltage VF (V)
103
IF = 30 mA
0.6
10 mA
0.4
0.2
1 mA
10−2
10−1
0
0.4
0.8
1.2
1.6
2.0
2.4
0
5
15
20
IR  T a
30
102
10
1
Terminal capacitance Ct (pF)
VR = 30 V
3V
1V
f = 1 MHz
Ta = 25°C
2.8
2.4
2.0
1.6
1.2
0.8
0.4
10−1
–40
0
0
40
80
120
160
Ambient temperature Ta (°C)
2
200
0
5
10
15
20
25
Reverse voltage VR (V)
SKH00016AED
0
−40
0
40
80
120
Ambient temperature Ta (°C)
Ct  VR
3.2
104
103
25
Reverse voltage VR (V)
Forward voltage VF (V)
Reverse current IR (µA)
10
30
160
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2001 MAR
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