PANASONIC MA3S781

Schottky Barrier Diodes (SBD)
MA3S781 (MA781)
Silicon epitaxial planar type
Unit: mm
0.28±0.05
0.80±0.05
(0.44)
■ Features
0.12+0.05
–0.02
0.88+0.05
–0.03
3°
(0.44)
1 2
1.60±0.05
(0.80)
3
• High-density mounting is possible
• Optimum for high frequency rectification because of its short
reverse recovery time (trr)
• Low forward voltage VF and good rectification efficiency
• SS-Mini type 3-pin package
0.28±0.05
(0.51)
(0.51)
(0.80) (0.80)
(0.375)
For switching
0.60+0.05
–0.03
1.60+0.05
–0.03
3°
Symbol
Rating
Unit
Reverse voltage (DC)
VR
30
V
Peak reverse voltage
VRM
30
V
Forward current (DC)
IF
30
mA
Peak forward current
IFM
150
mA
Junction temperature
Tj
125
°C
Storage temperature
Tstg
−55 to +125
°C
1 : Anode
2 : N.C.
3 : Cathode
EIAJ : SC-89
(0.15)
Parameter
0 to 0.1
■ Absolute Maximum Ratings Ta = 25°C
SSMini3-F2 Package
Marking Symbol: M1L
Internal Connection
3
1
2
■ Electrical Characteristics Ta = 25°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Reverse current (DC)
IR
VR = 30 V
300
nA
Forward voltage (DC)
VF1
IF = 1 mA
0.4
V
VF2
IF = 30 mA
Ct
VR = 1 V, f = 1 MHz
1.5
pF
trr
IF = IR = 10 mA
Irr = 1 mA, RL = 100 Ω
1.0
ns
η
Vin = 3 V(peak) , f = 30 MHz
RL = 3.9 kΩ, CL = 10 pF
65
%
Terminal capacitance
Reverse recovery time
*
Detection efficiency
1
Note) 1. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
and the leakage of current from the operating equipment.
2. Rated input/output frequency: 2 GHz
3. *: trr measuring instrument
Bias Application Unit N-50BU
Input Pulse
tp
tr
10%
A
VR
Pulse Generator
(PG-10N)
Rs = 50 Ω
Publication date: August 2001
Wave Form Analyzer
(SAS-8130)
Ri = 50 Ω
90%
tp = 2 µs
tr = 0.35 ns
δ = 0.05
Output Pulse
t
IF
trr
t
Irr = 1 mA
IF = 10 mA
IR = 10 mA
RL = 100 Ω
Note) The part number in the parenthesis shows conventional part number.
SKH00060AED
1
MA3S781
IF  V F
IR  V R
103
VF  Ta
103
1.6
−20°C
Ta = 125°C
Reverse current IR (µA)
Forward current IF (mA)
102
10
1
10−1
Ta = 125°C
10
75°C
1
25°C
10−1
Forward voltage VF (V)
1.4
75°C 25°C
102
1.2
1.0
0.8
IF = 30 mA
0.6
0.4
3 mA
0.2
10−2
0
0.2
0.4
0.6
0.8
1.0
10−2
1.2
0
Forward voltage VF (V)
5
10
15
20
25
0
−40
30
0
Ct  VR
103
40
80
120
160
200
Ambient temperature Ta (°C)
Reverse voltage VR (V)
IR  T a
1 mA
IF(surge)  tW
1 000
3.0
Terminal capacitance Ct (pF)
2.5
102
Reverse current IR (µA)
Forward surge current IF(surge) (A)
Ta = 25°C
VR = 30 V
10 V
1V
10
1
10−1
2.0
1.5
1.0
0.5
IF(surge)
300
tW
100
30
10
3
1
0.3
10−2
−40
0
0
40
80
120
160
Ambient temperature Ta (°C)
2
200
0
5
10
15
20
25
Reverse voltage VR (V)
SKH00060AED
30
0.1
0.03
0.1
0.3
1
3
10
Pulse width tW (ms)
30
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2001 MAR