Datasheet

AON6448
80V N-Channel MOSFET
SDMOS TM
General Description
Product Summary
VDS
The AON6448 is fabricated with SDMOSTM trench
technology that combines excellent RDS(ON) with low gate
charge.The result is outstanding efficiency with controlled
switching behavior. This universal technology is well
suited for PWM, load switching and general purpose
applications.
ID (at VGS=10V)
80V
65A
RDS(ON) (at VGS=10V)
< 9.6mΩ
RDS(ON) (at VGS = 7V)
< 12mΩ
100% UIS Tested
100% Rg Tested
DFN5X6
Top View
D
Top View
Bottom View
1
8
2
7
3
6
4
5
G
PIN1
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Symbol
Parameter
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC=25°C
Continuous Drain
Current G
Pulsed Drain Current
Continuous Drain
Current
C
V
A
138
11
IDSM
TA=70°C
±25
41
IDM
TA=25°C
Units
V
65
ID
TC=100°C
Maximum
80
A
9.0
Avalanche Current C
IAS, IAR
50
A
Avalanche energy L=0.1mH C
TC=25°C
EAS, EAR
125
mJ
Power Dissipation B
TA=25°C
Power Dissipation A
Junction and Storage Temperature Range
Rev 3: April 2011
2.5
Steady-State
Steady-State
RθJA
RθJC
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W
1.6
TJ, TSTG
Symbol
t ≤ 10s
W
33
PDSM
TA=70°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
83
PD
TC=100°C
-55 to 150
Typ
14
40
1
°C
Max
17
50
1.5
Units
°C/W
°C/W
°C/W
Page 1 of 7
AON6448
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
Min
Conditions
ID=250µA, VGS=0V
10
IGSS
Gate-Body leakage current
VGS(th)
Gate Threshold Voltage
VDS=VGS ID=250µA
2.7
ID(ON)
On state drain current
VGS=10V, VDS=5V
140
TJ=55°C
50
VDS=0V, VGS= ±25V
100
VGS=10V, ID=10A
16
VGS=7V, ID=10A
9.6
12
mΩ
VDS=5V, ID=10A
30
1
V
85
A
3100
pF
Forward Transconductance
VSD
Diode Forward Voltage
IS=1A,VGS=0V
IS
Maximum Body-Diode Continuous Current G
TJ=125°C
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Gate resistance
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
0.65
2100
VGS=0V, VDS=40V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
Qgs
V
A
13.3
gFS
Rg
3.7
nA
9.6
Static Drain-Source On-Resistance
Output Capacitance
3.2
µA
7.9
RDS(ON)
Reverse Transfer Capacitance
Units
V
VDS=80V, VGS=0V
Zero Gate Voltage Drain Current
Coss
Max
80
IDSS
Crss
Typ
VGS=10V, VDS=40V, ID=10A
2600
mΩ
S
240
340
440
pF
70
120
170
pF
0.4
0.8
1.2
Ω
35
44
53
nC
11
14
17
nC
8
14
20
nC
18
VGS=10V, VDS=40V, RL=4Ω,
RGEN=3Ω
ns
10
ns
24.5
ns
tf
Turn-Off Fall Time
trr
Body Diode Reverse Recovery Time
IF=10A, dI/dt=500A/µs
12
17
22
Qrr
Body Diode Reverse Recovery Charge IF=10A, dI/dt=500A/µs
45
65
85
5.2
ns
ns
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends
on the user's specific board design, and the maximum temperature of 150°C may be used if the PCB allow s it.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initial TJ =25°C.
D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink,
assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse ratin g.
G. The maximum current rating is limited by package.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 3: April 2011
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Page 2 of 7
AON6448
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
140
140
10V
120
7.5V
9V
8.5V
7V
VDS=5V
120
8V
100
100
80
ID(A)
ID (A)
6.5V
60
6V
80
60
40
40
VGS=5.5V
20
125°C
25°C
20
0
0
0
1
2
3
4
0
5
11
6
8
10
Normalized On-Resistance
2.2
VGS=7V
10
RDS(ON) (mΩ )
4
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
9
8
VGS=10V
7
2
VGS=10V
ID=10A
1.8
1.6
1.4
VGS=7V
ID=10A
1.2
17
5
2
10
1
0.8
6
0
5
0
15
20
25
30
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
10
25
50
75
100
125
150
175
0
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
18
(Note E)
20
1.0E+02
ID=10A
18
1.0E+01
40
1.0E+00
16
125°C
14
IS (A)
RDS(ON) (mΩ )
2
12
1.0E-02
10
1.0E-03
25°C
1.0E-04
25°C
8
125°C
1.0E-01
1.0E-05
6
4
8
12
16
20
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev 3: April 2011
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0.0
0.2
0.4
0.6
0.8
1.0
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
Page 3 of 7
AON6448
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
4500
10
VDS=40V
ID=10A
4000
3500
Capacitance (pF)
VGS (Volts)
8
6
4
Ciss
3000
2500
2000
1500
1000
2
Coss
500
0
10
20
30
40
Qg (nC)
Figure 7: Gate-Charge Characteristics
0
50
10
20
30
40
50
VDS (Volts)
Figure 8: Capacitance Characteristics
60
400
1000.0
RDS(ON)
limited
10.0
100µs
DC
1ms
1.0
320
TJ(Max)=150°C
TC=25°C
280
17
5
2
10
240
200
160
120
TJ(Max)=150°C
TC=25°C
0.1
360
10µs
Power (W)
10µs
100.0
ID (Amps)
Crss
0
0
80
40
0.0
0
0.01
0.1
1
VDS (Volts)
10
100
0.0001
Zθ JC Normalized Transient
Thermal Resistance
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
1
0.01
0.1
1
0
10
Pulse Width (s)
18
Figure 10: Single Pulse Power Rating Junction-toCase (Note F)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
10
0.001
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
RθJC=1.5°C/W
0.1
PD
Ton
Single Pulse
T
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev 3: April 2011
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Page 4 of 7
AON6448
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
90
80
50
TA=25°C
Power Dissipation (W)
IAR (A) Peak Avalanche Current
60
40
30
TA=100°C
20
TA=125°C
TA=150°C
10
70
60
50
40
30
20
10
0
0
0
0.000001
0.00001
0.0001
0.001
Time in avalanche, tA (s)
Figure 12: Single Pulse Avalanche capability (Note
C)
25
50
75
100
70
TA=25°C
1000
60
Power (W)
Current rating ID(A)
150
10000
80
50
40
17
5
2
10
100
30
10
20
10
1
0.0001
0
0
25
50
75
100
125
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1
0.01
1
100
10000
0
18
150
TCASE (°C)
Figure 14: Current De-rating (Note F)
Zθ JA Normalized Transient
Thermal Resistance
125
TCASE (°C)
Figure 13: Power De-rating (Note F)
Pulse Width (s)
Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H)
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
RθJA=50°C/W
0.1
PD
0.01
Single Pulse
Ton
T
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Rev 3: April 2011
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Page 5 of 7
AON6448
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
180
15
125ºC
160
24
3
di/dt=800A/µs
13
125ºC
20
2.5
11
7
120
125ºC
Qrr
15
20
25
0
0
25
25ºC
2
125ºC
25ºC
1.5
trr
S
15
1
125º
3
0.5
5
Qrr
S
25ºC
40
0
200
400
600
800
1000
0
0
0
di/dt (A/µ
µs)
Figure 19: Diode Reverse Recovery Charge and
Peak Current vs. di/dt
Rev 3: April 2011
30
10
Irm
0
25
20
6
60
20
2.5
9
trr (ns)
Qrr (nC)
25ºC
100
80
15
Is=10A
125ºC
120
10
30
Irm (A)
140
5
IS (A)
Figure 18: Diode Reverse Recovery Time and
Softness Factor vs. Conduction Current
12
125ºC
0.5
0
IS (A)
Figure 17: Diode Reverse Recovery Charge and Peak
Current vs. Conduction Current
Is=10A
125ºC
25ºC
30
160
1.5
1
S
4
-1
10
25ºC
8
1
60
5
trr
3
25ºC
di/dt=800A/µs
0
2
12
5
100
80
16
9
S
25ºC
trr (ns)
Irm
Irm (A)
Qrr (nC)
140
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200
400
600
800
1000
di/dt (A/µ
µs)
Figure 20: Diode Reverse Recovery Time and
Softness Factor vs. di/dt
Page 6 of 7
AON6448
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
90%
+ Vdd
DUT
Vgs
VDC
-
Rg
10%
Vgs
Vgs
t d(on)
tr
t d(off)
t on
tf
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
2
E AR = 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vds Isd
Vgs
Ig
Rev 3: April 2011
Vgs
L
Isd
+ Vdd
t rr
dI/dt
I RM
Vdd
VDC
-
IF
Vds
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Page 7 of 7