2N5038 NPN Silicon Transistors Fast switching speeds and high current capacity ideally suit these parts for use in switching regulators, inverters, wide-band amplifiers and power oscillators in industrial and commercial applications. Features http://onsemi.com •High Speed - tf = 0.5 ms (Max) •High Current - IC(max) = 30 Amps •Low Saturation - VCE(sat) = 2.5 V (Max) @ IC = 20 Amps •Pb-Free Package is Available* MAXIMUM RATINGS (Note 1) Rating Symbol Value Unit Collector-Emitter Voltage VCEO 90 Vdc Collector-Base Voltage VCBO 150 Vdc Collector-Emitter Voltage VCEV 150 Vdc Emitter-Base Voltage VEBO 7 Vdc IC ICM 20 30 Adc IB 5 Adc PD 140 0.8 W W/_C TJ, Tstg -65 to +200 _C Collector Current Base Current - Continuous Peak (Note 2) Continuous Total Device Dissipation @ TC = 25_C Derate above 25_C Operating and Storage Junction Temperature Range 20 AMPERE NPN SILICON POWER TRANSISTORS 90 VOLTS - 140 WATTS TO-204AA (TO-3) CASE 1-07 STYLE 1 MARKING DIAGRAMS THERMAL CHARACTERISTICS Characteristics Thermal Resistance, Junction-to-Case Symbol Max Unit RqJC 1.25 _C/W Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Indicates JEDEC Registered Data. 2. Pulse Test: Pulse Width v 10 ms, Duty Cycle v 50%. 2N5038 VCC +30 V RC 2.5 IC = 12 AMPS IB1 = IB2 = 1.2 AMPS 10 W +11 V PW = 20 ms DUTY CYCLE = 1% 0 2N5038G AYYWW MEX G A YY WW MEX = = = = = Pb-Free Package Assembly Location Year Work Week Country of Origin 1N4933 -9 V ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. -5 V Figure 1. Switching Time Test Circuit *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2007 August, 2007 - Rev. 12 1 Publication Order Number: 2N5038/D 2N5038 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) (Note 3) Characteristic Symbol Min Max 90 - - 50 10 - 5 50 20 100 - 2.5 - 3.3 12 - Unit OFF CHARACTERISTICS Collector-Emitter Sustaining Voltage (Note 4) (IC = 200 mAdc, IB = 0) VCEO(sus) Collector Cutoff Current (VCE = 140 Vdc, VBE(off) = 1.5 V) (VCE = 100 Vdc, VBE(off) = 1.5 Vdc, TC = 150_C) ICEX Emitter Cutoff Current (VEB = 5 Vdc, IC = 0) (VEB = 7 Vdc, IC = 0) IEBO Vdc mAdc mAdc ON CHARACTERISTICS (Note 4) DC Current Gain (IC = 12 Adc, VCE = 5 Vdc) hFE Collector-Emitter Saturation Voltage (IC = 20 Adc, IB = 5 Adc) VCE(sat) Base-Emitter Saturation Voltage (IC = 20 Adc, IB = 5 Adc) VBE(sat) - Vdc Vdc DYNAMIC CHARACTERISTICS Magnitude of Common-Emitter Small-Signal Short-Circuit Forward Current Transfer Ratio (IC = 2 Adc, VCE = 10 Vdc, f = 5 MHz) |hfe| - SWITCHING CHARACTERISTICS RESISTIVE LOAD Rise Time (VCC = 30 Vdc) tr - 0.5 ms Storage Time (IC = 12 Adc, IB1 = IB2 = 1.2 Adc) ts - 1.5 ms 3. Indicates JEDEC Registered Data. 4. Pulse Test: Pulse Width v 300, ms, Duty Cycle v 2%. ORDERING INFORMATION Device Package 2N5038 TO-204 2N5038G IC, COLLECTOR CURRENT (AMPS) There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. Second breakdown pulse limits are valid for duty cycles to 10%. At high case temperatures, thermal limitations may reduce the power that can be handled to values less than the limitations imposed by second breakdown. 50 20 dc 5 2 BONDING WIRE LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT TC = 25°C 1 0.5 0.2 0.1 1 100 Units / Tray TO-204 (Pb-Free) 100 10 Shipping 2 3 5 7 10 20 30 50 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 70 100 Figure 2. Forward Bias Safe Operating Area http://onsemi.com 2 2N5038 PACKAGE DIMENSIONS CASE 1-07 TO-204AA (TO-3) ISSUE Z A N NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. ALL RULES AND NOTES ASSOCIATED WITH REFERENCED TO-204AA OUTLINE SHALL APPLY. C -TE D K 2 PL 0.13 (0.005) U T Q M M Y DIM A B C D E G H K L N Q U V M -Y- L V SEATING PLANE 2 H G B M T Y 1 -Q0.13 (0.005) M INCHES MIN MAX 1.550 REF --1.050 0.250 0.335 0.038 0.043 0.055 0.070 0.430 BSC 0.215 BSC 0.440 0.480 0.665 BSC --0.830 0.151 0.165 1.187 BSC 0.131 0.188 STYLE 1: PIN 1. BASE 2. EMITTER CASE: COLLECTOR http://onsemi.com 3 MILLIMETERS MIN MAX 39.37 REF --26.67 6.35 8.51 0.97 1.09 1.40 1.77 10.92 BSC 5.46 BSC 11.18 12.19 16.89 BSC --21.08 3.84 4.19 30.15 BSC 3.33 4.77