2N6487 D

2N6487, 2N6488 (NPN),
2N6490, 2N6491 (PNP)
Complementary Silicon
Plastic Power Transistors
These devices are designed for use in general−purpose amplifier and
switching applications.
Features
•
•
•
•
15 AMPERE
COMPLEMENTARY SILICON
POWER TRANSISTORS
60−80 VOLTS, 75 WATTS
High DC Current Gain
High Current Gain − Bandwidth Product
TO−220 Compact Package
These Devices are Pb−Free and are RoHS Compliant*
MAXIMUM RATINGS (Note 1)
Rating
Collector−Emitter Voltage
2N6487, 2N6490
2N6488, 2N6491
Symbol
Value
VCEO
Vdc
60
80
VCB
Vdc
Emitter−Base Voltage
VEB
5.0
Vdc
Collector Current − Continuous
IC
15
Adc
Base Current
IB
5.0
Adc
Total Power Dissipation
@ TC = 25_C
Derate above 25_C
PD
75
0.6
W
W/°C
Total Power Dissipation
@ TA = 25_C
Derate above 25_C
PD
70
90
TJ, Tstg
PNP
NPN
COLLECTOR 2, 4
COLLECTOR 2, 4
1
BASE
1
BASE
Unit
Collector−Base Voltage
2N6487, 2N6490
2N6488, 2N6491
Operating and Storage Junction
Temperature Range
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1.8
0.014
W
W/°C
−65 to +150
°C
EMITTER 3
EMITTER 3
4
TO−220
CASE 221A
STYLE 1
1
2
3
MARKING DIAGRAM
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Indicates JEDEC Registered Data.
2N64xxG
AYWW
THERMAL CHARACTERISTICS
Characteristics
Symbol
Max
Unit
Thermal Resistance, Junction−to−Case
RqJC
1.67
_C/W
Thermal Resistance, Junction−to−Ambient
RqJA
70
_C/W
2N64xx
xx
G
A
Y
WW
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2014
November, 2014 − Rev. 16
1
= Specific Device Code
= See Table on Page 5
= Pb−Free Package
= Assembly Location
= Year
= Work Week
ORDERING INFORMATION
See detailed ordering, marking, and shipping information in
the package dimensions section on page 5 of this data sheet.
Publication Order Number:
2N6487/D
2N6487, 2N6488 (NPN), 2N6490, 2N6491 (PNP)
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) (Note 2)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (Note 3)
(IC = 200 mAdc, IB = 0)
2N6487, 2N6490
2N6488, 2N6491
VCEO(sus)
Collector−Emitter Sustaining Voltage (Note 3)
(IC = 200 mAdc, VBE = 1.5 Vdc)
2N6487, 2N6490
2N6488, 2N6491
VCEX
Collector Cutoff Current
(VCE = 30 Vdc, IB = 0)
2N6487, 2N6490
(VCE = 40 Vdc, IB = 0)
2N6488, 2N6491
ICEO
Collector Cutoff Current
(VCE = 65 Vdc, VEB(off) = 1.5 Vdc)
2N6487, 2N6490
(VCE = 85 Vdc, VEB(off) = 1.5 Vdc)
2N6488, 2N6491
(VCE = 60 Vdc, VEB(off) = 1.5 Vdc, TC = 150_C)
2N6487, 2N6490
(VCE = 80 Vdc, VEB(off) = 1.5 Vdc, TC = 150_C)
2N6488, 2N6491
ICEX
Emitter Cutoff Current
(VBE = 5.0 Vdc, IC = 0)
IEBO
Vdc
60
80
−
−
Vdc
70
90
−
−
mAdc
−
1.0
−
1.0
mAdc
−
500
−
500
−
5.0
−
5.0
−
1.0
20
5.0
150
−
−
−
1.3
3.5
−
−
1.3
3.5
5.0
−
25
−
mAdc
ON CHARACTERISTICS
DC Current Gain
(IC = 5.0 Adc, VCE = 4.0 Vdc)
(IC = 15 Adc, VCE = 4.0 Vdc)
hFE
Collector−Emitter Saturation Voltage
(IC = 5.0 Adc, IB = 0.5 Adc)
(IC = 15 Adc, IB = 5.0 Adc)
VCE(sat)
Base−Emitter On Voltage
(IC = 5.0 Adc, VCE = 4.0 Vdc)
(IC = 15 Adc, VCE = 4.0 Vdc)
VBE(on)
−
Vdc
Vdc
DYNAMIC CHARACTERISTICS
Current−Gain − Bandwidth Product (Note 4)
(IC = 1.0 Adc, VCE = 4.0 Vdc, ftest = 1.0 MHz)
fT
Small−Signal Current Gain
(IC = 1.0 Adc, VCE = 4.0 Vdc, f = 1.0 kHz)
hfe
MHz
−
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Indicates JEDEC Registered Data.
3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.
4. fT = |hfe| • ftest
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2
PD, POWER DISSIPATION (WATTS)
2N6487, 2N6488 (NPN), 2N6490, 2N6491 (PNP)
TA
4.0
TC
80
3.0
60
TC
2.0
40
TA
1.0
20
0
0
0
20
40
80
60
100
120
140
160
TC, CASE TEMPERATURE (°C)
Figure 1. Power Derating
VCC
+ 30 V
25 ms
1000
500
RC
+ 10 V
tr
SCOPE
200
- 10 V
51
tr, tf v 10 ns
DUTY CYCLE = 1.0%
t, TIME (ns)
RB
0
D1
100
RB AND RC VARIED TO OBTAIN DESIRED CURRENT LEVELS.
FOR PNP, REVERSE ALL POLARITIES.
TC = 25°C
VCC = 30 V
IC/IB = 10
20
D1 MUST BE FAST RECOVERY TYPE, e.g.:
1N5825 USED ABOVE IB [ 100 mA
MSD6100 USED BELOW IB [ 100 mA
10
0.2
0.5
r(t), TRANSIENT THERMAL RESISTANCE
(NORMALIZED)
Figure 2. Switching Time Test Circuit
1.0
0.7
0.5
0.3
td @ VBE(off) [ 5.0 V
NPN
PNP
50
-4V
1.0
5.0
2.0
IC, COLLECTOR CURRENT (AMP)
10
20
Figure 3. Turn−On Time
D = 0.5
0.2
0.2
0.1
0.1
0.07
0.05
P(pk)
ZqJC (t) = r(t) RqJC
RqJC = 1.67°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) - TC = P(pk) ZqJC(t)
0.05
0.02
0.03
0.02
0.01
0.01
0.01
0.02
SINGLE PULSE
0.05
0.1
0.2
0.5
1.0
2.0
5.0
10
t, TIME (ms)
Figure 4. Thermal Response
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3
20
50
t1
t2
DUTY CYCLE, D = t1/t2
100
200
500 1.0 k
2N6487, 2N6488 (NPN), 2N6490, 2N6491 (PNP)
IC, COLLECTOR CURRENT (AMP)
20
10
100 ms
5.0
500 ms
1.0 ms
2.0
TJ = 150°C
1.0
SECOND BREAKDOWN LIMITED
BONDING WIRE LIMITED
THERMALLY LIMITED @ TC = 25°C
0.5
CURVES APPLY BELOW RATED VCEO
2N6487, 2N6490
2N6488, 2N6491
0.2
0.1
There are two limitations on the power handling ability of
a transistors average junction temperature and second
breakdown. Safe operating area curves indicate IC − VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 5 is based on TJ(pk) = 150_C; TC is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided TJ(pk)
≤ 150_C. TJ(pk) may be calculated from the data in Figure 4.
At high case temperatures, thermal limitations will reduce
the power that can be handled to values less than the
limitations imposed by second breakdown.
2.0
5.0 ms
dc
40 60
4.0
10
20
80
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 5. Active−Region Safe Operating Area
5000
1000
700
C, CAPACITANCE (pF)
ts
t, TIME (ns)
1000
500
tf
NPN
PNP
200
VCC = 30 V
IC/IB = 10
IB1 = IB2
TJ = 25°C
100
50
0.2
0.5
1.0
2.0
5.0
IC, COLLECTOR CURRENT (AMP)
Cob
300
Cib
200
Cob
100
NPN
PNP
TJ = 25°C
70
10
50
20
0.5
1.0
Figure 6. Turn−Off Time
Figure 7. Capacitances
NPN
2N6487, 2N6488
PNP
2N6490, 2N6491
500
50
2.0
5.0
10
20
VR, REVERSE VOLTAGE (VOLTS)
500
TJ = 150°C
100
-55°C
50
20
VCE = 2.0 V
10
5.0
0.2
0.5
1.0
2.0
5.0
IC, COLLECTOR CURRENT (AMP)
TJ = 150°C
200
25°C
hFE, DC CURRENT GAIN
hFE, DC CURRENT GAIN
200
25°C
100
-55°C
50
20
10
10
5.0
20
VCE = 2.0 V
0.2
Figure 8. DC Current Gain
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4
0.5
1.0
2.0
5.0
IC, COLLECTOR CURRENT (AMP)
10
20
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
2N6487, 2N6488 (NPN), 2N6490, 2N6491 (PNP)
2.0
TJ = 25°C
1.8
1.6
1.4
1.2
1.0
IC = 1.0 A
0.8
4.0 A
8.0 A
0.6
0.4
0.2
0
5.0
10
20
50 100
200 500 1000
IB, BASE CURRENT (mA)
2000 5000
2.0
TJ = 25°C
1.8
1.6
1.4
1.2
IC = 1.0 A
1.0
4.0 A
8.0 A
0.8
0.6
0.4
0.2
0
5.0
20
10
50 100
200 500 1000
IB, BASE CURRENT (mA)
2000 5000
Figure 9. Collector Saturation Region
2.8
2.8
V, VOLTAGE (VOLTS)
V, VOLTAGE (VOLTS)
2.0
1.6
1.2
VBE(sat) = IC/IB = 10
0.8
2.0
1.6
1.2
VBE(sat) @ IC/IB = 10
0.8
VBE @ VCE = 2.0 V
0.4
TJ = 25°C
2.4
TJ = 25°C
2.4
VBE @ VCE = 2.0 V
0.4
VCE(sat) @ IC/IB = 10
0
VCE(sat) @ IC/IB = 10
0
0.2
0.5
1.0
2.0
5.0
10
0.2
20
0.5
IC, COLLECTOR CURRENT (AMP)
1.0
2.0
5.0
10
IC, COLLECTOR CURRENT (AMP)
Figure 10. “On” Voltages
ORDERING INFORMATION
Device
Device Marking
Package
Shipping
2N6487G
2N6487
TO−220
(Pb−Free)
50 Units / Rail
2N6488G
2N6488
TO−220
(Pb−Free)
50 Units / Rail
2N6490G
2N6490
TO−220
(Pb−Free)
50 Units / Rail
2N6491G
2N6491
TO−220
(Pb−Free)
50 Units / Rail
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5
20
2N6487, 2N6488 (NPN), 2N6490, 2N6491 (PNP)
PACKAGE DIMENSIONS
TO−220
CASE 221A−09
ISSUE AH
−T−
B
SEATING
PLANE
C
F
T
S
4
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
T
U
V
Z
A
Q
1 2 3
U
H
K
Z
L
R
V
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
J
G
D
INCHES
MIN
MAX
0.570
0.620
0.380
0.415
0.160
0.190
0.025
0.038
0.142
0.161
0.095
0.105
0.110
0.161
0.014
0.024
0.500
0.562
0.045
0.060
0.190
0.210
0.100
0.120
0.080
0.110
0.045
0.055
0.235
0.255
0.000
0.050
0.045
----0.080
MILLIMETERS
MIN
MAX
14.48
15.75
9.66
10.53
4.07
4.83
0.64
0.96
3.61
4.09
2.42
2.66
2.80
4.10
0.36
0.61
12.70
14.27
1.15
1.52
4.83
5.33
2.54
3.04
2.04
2.79
1.15
1.39
5.97
6.47
0.00
1.27
1.15
----2.04
N
STYLE 1:
PIN 1.
2.
3.
4.
BASE
COLLECTOR
EMITTER
COLLECTOR
ON Semiconductor and the
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2N6487/D
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