ETC 2N6487/D

ON Semiconductor
NPN
Complementary Silicon Plastic
Power Transistors
2N6487
2N6488 *
PNP
. . . designed for use in general–purpose amplifier and switching
applications.
2N6490
• DC Current Gain Specified to 15 Amperes —
•
•
•
2N6491*
hFE = 20–150 @ IC = 5.0 Adc
= 5.0 (Min) @ IC = 15 Adc
Collector–Emitter Sustaining Voltage —
VCEO(sus) = 60 Vdc (Min) – 2N6487, 2N6490
= 80 Vdc (Min) – 2N6488, 2N6491
High Current Gain — Bandwidth Product
fT = 5.0 MHz (Min) @ IC = 1.0 Adc
TO–220AB Compact Package
*ON Semiconductor Preferred Device
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15 AMPERE
COMPLEMENTARY
SILICON
POWER TRANSISTORS
60–80 VOLTS
75 WATTS
MAXIMUM RATINGS (1)
Symbol
2N6487
2N6490
2N6488
2N6491
Unit
VCEO
60
80
Vdc
Collector–Base Voltage
VCB
70
90
Vdc
Emitter–Base Voltage
VEB
Rating
Collector–Emitter Voltage
5.0
Vdc
Collector Current — Continuous
IC
15
Adc
Base Current
IB
5.0
Adc
Total Power Dissipation @ TC = 25C
Derate above 25C
PD
75
0.6
Watts
W/C
Total Power Dissipation @ TA = 25C
Derate above 25C
PD
1.8
0.014
Watts
W/C
TJ, Tstg
–65 to +150
C
Operating and Storage Junction
Temperature Range
CASE 221A–09
TO–220AB
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
RθJC
1.67
C/W
Thermal Resistance, Junction to Ambient
RθJA
70
C/W
(1) Indicates JEDEC Registered Data.
Preferred devices are ON Semiconductor recommended choices for future use and best overall value.
 Semiconductor Components Industries, LLC, 2001
March, 2001 – Rev. 9
1
Publication Order Number:
2N6487/D
PD, POWER DISSIPATION (WATTS)
2N6487 2N6488 2N6490 2N6491
TA
4.0
TC
80
3.0
60
TC
2.0
40
1.0
20
0
0
TA
0
20
40
60
80
100
120
TC, CASE TEMPERATURE (°C)
Figure 1. Power Derating
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2
140
160
2N6487 2N6488 2N6490 2N6491
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*ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted)
Characteristic
Symbol
Min
Max
60
80
—
70
90
—
—
—
—
1.0
1.0
—
—
—
—
500
500
5.0
5.0
—
1.0
20
5.0
150
—
—
—
1.3
3.5
—
—
1.3
3.5
Unit
OFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage (1)
(IC = 200 mAdc, IB = 0)
VCEO(sus)
2N6487, 2N6490
2N6488, 2N6491
Collector–Emitter Sustaining Voltage (1)
(IC = 200 mAdc, VBE = 1.5 Vdc)
Vdc
VCEX
2N6487, 2N6490
2N6488, 2N6491
Collector Cutoff Current
(VCE = 30 Vdc, IB = 0)
(VCE = 40 Vdc, IB = 0)
2N6487, 2N6490
2N6488, 2N6491
Collector Cutoff Current
(VCE = 65 Vdc, VEB(off) = 1.5 Vdc)
(VCE = 85 Vdc, VEB(off) = 1.5 Vdc)
(VCE = 60 Vdc, VEB(off) = 1.5 Vdc, TC = 150C)
(VCE = 80 Vdc, VEB(off) = 1.5 Vdc, TC = 150C)
2N6487, 2N6490
2N6488, 2N6491
2N6487, 2N6490
2N6488, 2N6491
Vdc
ICEO
mAdc
µAdc
ICEX
Emitter Cutoff Current
(VBE = 5.0 Vdc, IC = 0)
IEBO
mAdc
ON CHARACTERISTICS
DC Current Gain
(IC = 5.0 Adc, VCE = 4.0 Vdc)
(IC = 15 Adc, VCE = 4.0 Vdc)
hFE
Collector–Emitter Saturation Voltage
(IC = 5.0 Adc, IB = 0.5 Adc)
(IC = 15 Adc, IB = 5.0 Adc)
VCE(sat)
Base–Emitter On Voltage
(IC = 5.0 Adc, VCE = 4.0 Vdc)
(IC = 15 Adc, VCE = 4.0 Vdc)
VBE(on)
—
Vdc
Vdc
DYNAMIC CHARACTERISTICS
Current–Gain — Bandwidth Product (2)
(IC = 1.0 Adc, VCE = 4.0 Vdc, ftest = 1.0 MHz)
fT
5.0
—
MHz
Small–Signal Current Gain
(IC = 1.0 Adc, VCE = 4.0 Vdc, f = 1.0 kHz)
hfe
25
—
—
*Indicates JEDEC Registered Data.
(1) Pulse Test: Pulse Width 300 µs, Duty Cycle 2.0%.
(2) fT = |hfe| • ftest.
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3
2N6487 2N6488 2N6490 2N6491
VCC
+ 30 V
25 µs
1000
500
RC
+ 10 V
SCOPE
- 10 V
51
tr, tf 10 ns
DUTY CYCLE = 1.0%
t, TIME (ns)
RB
0
D1
tr
200
100
RB AND RC VARIED TO OBTAIN DESIRED CURRENT LEVELS.
FOR PNP, REVERSE ALL POLARITIES.
TC = 25°C
VCC = 30 V
IC/IB = 10
20
D1 MUST BE FAST RECOVERY TYPE, e.g.:
1N5825 USED ABOVE IB 100 mA
MSD6100 USED BELOW IB 100 mA
10
td @ VBE(off) 5.0 V
NPN
PNP
50
-4V
0.2
0.5
2.0
1.0
5.0
IC, COLLECTOR CURRENT (AMP)
r(t), TRANSIENT THERMAL RESISTANCE
(NORMALIZED)
Figure 2. Switching Time Test Circuit
1.0
0.7
0.5
10
20
Figure 3. Turn–On Time
D = 0.5
0.3
0.2
0.2
0.1
0.1
0.07
0.05
P(pk)
ZθJC (t) = r(t) RθJC
RθJC = 1.67°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) - TC = P(pk) ZθJC(t)
0.05
0.02
0.03
0.02
0.01
0.01
0.01
0.02
SINGLE PULSE
0.05
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
t1
t2
DUTY CYCLE, D = t1/t2
100
200
500 1.0 k
t, TIME (ms)
Figure 4. Thermal Response
IC, COLLECTOR CURRENT (AMP)
20
10
100 µs
5.0
500 µs
2.0
1.0
1.0 ms
TJ = 150°C
SECOND BREAKDOWN LIMITED
BONDING WIRE LIMITED
THERMALLY LIMITED @ TC = 25°C
0.5
CURVES APPLY BELOW RATED VCEO
2N6487, 2N6490
2N6488, 2N6491
0.2
0.1
There are two limitations on the power handling ability of
a transistors average junction temperature and second
breakdown. Safe operating area curves indicate IC – VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 5 is based on TJ(pk) = 150C; TC is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided TJ(pk)
150C. TJ(pk) may be calculated from the data in
Figure 4. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown
2.0
5.0 ms
dc
40 60
4.0
10
20
80
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 5. Active–Region Safe Operating Area
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4
2N6487 2N6488 2N6490 2N6491
1000
5000
700
C, CAPACITANCE (pF)
ts
t, TIME (ns)
1000
500
tf
NPN
PNP
200
100
50
0.2
0.5
VCC = 30 V
IC/IB = 10
IB1 = IB2
TJ = 25°C
1.0
2.0
5.0
IC, COLLECTOR CURRENT (AMP)
Cob
300
Cib
200
Cob
100
NPN
PNP
TJ = 25°C
70
10
50
20
0.5
Figure 6. Turn–Off Time
1.0
2.0
5.0
10
20
VR, REVERSE VOLTAGE (VOLTS)
Figure 7. Capacitances
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5
50
2N6487 2N6488 2N6490 2N6491
NPN
2N6487, 2N6488
PNP
2N6490, 2N6491
500
500
TJ = 150°C
100
-55°C
50
20
VCE = 2.0 V
10
5.0
0.2
25°C
100
-55°C
50
20
10
5.0
1.0
2.0
IC, COLLECTOR CURRENT (AMP)
0.5
TJ = 150°C
200
25°C
hFE, DC CURRENT GAIN
hFE, DC CURRENT GAIN
200
10
5.0
20
VCE = 2.0 V
0.2
0.5
1.0
2.0
5.0
IC, COLLECTOR CURRENT (AMP)
10
20
2.0
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 8. DC Current Gain
TJ = 25°C
1.8
1.6
1.4
1.2
1.0
IC = 1.0 A
0.8
4.0 A
0.6
8.0 A
0.4
0.2
0
5.0
10
20
50 100
200 500 1000
IB, BASE CURRENT (mA)
2000 5000
2.0
TJ = 25°C
1.8
1.6
1.4
1.2
IC = 1.0 A
1.0
4.0 A
8.0 A
0.8
0.6
0.4
0.2
0
5.0
20
10
50 100
200 500 1000
IB, BASE CURRENT (mA)
2000 5000
Figure 9. Collector Saturation Region
2.8
2.8
V, VOLTAGE (VOLTS)
V, VOLTAGE (VOLTS)
2.0
1.6
1.2
VBE(sat) = IC/IB = 10
0.8
0
0.5
1.0
1.6
1.2
VBE(sat) @ IC/IB = 10
VBE @ VCE = 2.0 V
0.4
VCE(sat) @ IC/IB = 10
0.2
2.0
0.8
VBE @ VCE = 2.0 V
0.4
TJ = 25°C
2.4
TJ = 25°C
2.4
2.0
5.0
10
0
20
VCE(sat) @ IC/IB = 10
0.2
IC, COLLECTOR CURRENT (AMP)
0.5
1.0
2.0
5.0
IC, COLLECTOR CURRENT (AMP)
Figure 10. “On” Voltages
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6
10
20
2N6487 2N6488 2N6490 2N6491
PACKAGE DIMENSIONS
TO–220AB
CASE 221A–09
ISSUE AA
–T–
B
SEATING
PLANE
C
F
T
S
4
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
T
U
V
Z
A
Q
1 2 3
U
H
K
Z
L
R
V
J
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
G
D
N
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7
INCHES
MIN
MAX
0.570
0.620
0.380
0.405
0.160
0.190
0.025
0.035
0.142
0.147
0.095
0.105
0.110
0.155
0.018
0.025
0.500
0.562
0.045
0.060
0.190
0.210
0.100
0.120
0.080
0.110
0.045
0.055
0.235
0.255
0.000
0.050
0.045
----0.080
MILLIMETERS
MIN
MAX
14.48
15.75
9.66
10.28
4.07
4.82
0.64
0.88
3.61
3.73
2.42
2.66
2.80
3.93
0.46
0.64
12.70
14.27
1.15
1.52
4.83
5.33
2.54
3.04
2.04
2.79
1.15
1.39
5.97
6.47
0.00
1.27
1.15
----2.04
2N6487 2N6488 2N6490 2N6491
ON Semiconductor and
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