EN2005 D

Ordering number : EN2005C
2SA1416/2SC3646
Bipolar Transistor
http://onsemi.com
(–)100V, (–)1A, Low VCE(sat), (PNP)NPN Single PCP
Features
Adoption of FBET, MBIT processes
High breakdown voltage and large current capacity
Fast switching speed
Ultrasmall size making it easy to provide high-density, small-sized hybrid IC’s
•
•
•
•
Specifications
( ) : 2SA1416
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Collector-to-Base Voltage
Conditions
Ratings
Unit
VCBO
VCEO
(--)120
V
(--)100
V
(--)6
V
Collector Current
VEBO
IC
(--)1
A
Collector Current (Pulse)
ICP
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Dissipation
PC
Junction Temperature
Tj
Storage Temperature
Tstg
When mounted on ceramic substrate (250mm2×0.8mm)
(--)2
A
500
mW
1.3
W
150
°C
--55 to +150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
Product & Package Information
unit : mm (typ)
7007B-004
• Package
: PCP
• JEITA, JEDEC
: SC-62, SOT-89, TO-243
• Minimum Packing Quantity : 1,000 pcs./reel
Top View
4.5
1.6
2.5
1.0
Packing Type: TD
4.0
1.5
2SA1416S-TD-E
2SA1416T-TD-E
2SC3646S-TD-E
2SC3646T-TD-E
TD
0.4
0.4
0.5
Marking
AB
1.5
3.0
RANK
RANK
2SA1416
0.75
LOT No.
3
CB
2
LOT No.
1
2SC3646
Electrical Connection
2
1 : Base
2 : Collector
3 : Emitter
Bottom View
1
PCP
1
3
2SA1416
Semiconductor Components Industries, LLC, 2013
September, 2013
2
3
2SC3646
82212 TKIM/31010EA TKIM/O3103TN (KT)/71598HA (KT)/3277KI/N255MW, TS No.2005-1/7
2SA1416 / 2SC3646
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Collector Cutoff Current
Conditions
Ratings
min
typ
max
Unit
ICBO
IEBO
VCB=(--)100V, IE=0A
VEB=(--)4V, IC=0A
VCE=(--)5V, IC=(--)100mA
Gain-Bandwidth Product
hFE
fT
VCE=(--)10V, IC=(--)100mA
120
Output Capacitance
Cob
(13)8.5
Collector-to-Emitter Saturation Voltage
VCE(sat)
VBE(sat)
VCB=(--)10V, f=1MHz
IC=(--)400mA, IB=(--)40mA
(--0.2)0.1
(--0.6)0.4
V
IC=(--)400mA, IB=(--)40mA
(--)0.85
(--)1.2
V
Emitter Cutoff Current
DC Current Gain
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-ON Time
Storage Time
Fall Time
100*
(--)100
nA
(--)100
nA
400*
MHz
pF
V(BR)CBO
V(BR)CEO
IC=(--)10μA, IE=0A
(--)120
V
IC=(--)1mA, RBE=∞
(--)100
V
V(BR)EBO
ton
IE=(--)10μA, IC=0A
tstg
tf
See specified Test Circuit.
(--)6
V
(80)80
ns
(700)850
ns
(40)50
ns
* : The 2SA1416 / 2SC3646 are classified by 100mA hFE as follows :
Rank
R
S
T
hFE
100 to 200
140 to 280
200 to 400
Switching Time Test Circuit
IB1
PW=20μs
D.C.≤1%
IB2
INPUT
RB
RL
VR
50Ω
+
100μF
+
470μF
--5V
50V
IC=10IB1=--10IB2=400mA
(For PNP, the polarity is reversed)
Ordering Information
Package
Shipping
2SA1416S-TD-E
Device
PCP
1,000pcs./reel
2SA1416T-TD-E
PCP
1,000pcs./reel
2SC3646S-TD-E
PCP
1,000pcs./reel
2SC3646T-TD-E
PCP
1,000pcs./reel
memo
Pb Free
No.2005-2/7
2SA1416 / 2SC3646
IC -- VCE
--1.0
mA
mA
--10m
5
--2
--0.8
mA
0
--2
--5mA
--0.6
--3mA
--0.4
--2mA
--1mA
--0.2
--1
--2
--3
--4
10mA
5mA
0.6
3mA
2mA
0.4
1mA
IB=0mA
0
mA
--300
--1.0mA
--200
--0.5mA
--100
IB=0mA
--10
--20
--30
--40
Collector-to-Emitter Voltage, VCE -- V
0.5mA
100
10
20
30
40
50
ITR03529
IC -- VBE
2SC3646
VCE=5V
--0.4
0.8
0.6
Ta=7
5°C
25°C
--25°C
Collector Current, IC -- A
1.0
--0.6
0.4
0.2
0
0
--0.2
--0.4
--0.6
--0.8
--1.0
--1.2
Base-to-Emitter Voltage, VBE -- V ITR03530
hFE -- IC
1000
5
DC Current Gain, hFE
25°C
--25°C
7
5
7
2
3
5
--0.1
Collector Current, IC -- A
7
--1.0
2
3
ITR03532
1.2
ITR03531
Ta=75°C
25°C
--25°C
7
5
2
5
1.0
2SC3646
VCE=5V
100
3
3
0.8
2
2
2
0.6
hFE -- IC
3
3
7 --0.01
0.4
Base-to-Emitter Voltage, VBE -- V
5
2
100
0.2
7
Ta=75°
C
3
0
1000
2SA1416
VCE=--5V
7
10
IB=0mA
0
2SA1416
VCE=--5V
Ta=7
5°C
25°C
--25°C
Collector Current, IC -- A
1.0mA
200
Collector-to-Emitter Voltage, VCE -- V
--0.2
DC Current Gain, hFE
300
ITR03528
--0.8
0
2SC3646
1.5mA
1.2
--1.0
ITR03527
400
0
--50
IC -- VBE
--1.2
5
2.0mA
2.5
Collector Current, IC -- mA
Collector Current, IC -- mA
--1.5mA
4
IC -- VCE
A
--2.0m
3
Collector-to-Emitter Voltage, VCE -- V
2SA1416
mA
0
0
2
500
--2.5
--400
1
ITR03526
IC -- VCE
--500
20mA
15mA
0.8
0
--5
Collector-to-Emitter Voltage, VCE -- V
A
25m
A
30m
0.2
IB=0mA
0
0
2SC3646
A
--15
0
--3
IC -- VCE
1.0
mA
Collector Current, IC -- A
Collector Current, IC -- A
2SA1416
10
7 0.01
2
3
5
7 0.1
2
3
5
Collector Current, IC -- A
7 1.0
2
3
ITR03533
No.2005-3/7
2SA1416 / 2SC3646
f T -- IC
2
2SA1416 / 2SC3646
f=1MHz
7
2SA1416
100
7
2SC3646
5
Cob -- VCB
100
2SA1416 / 2SC3646
VCE=10V
5
Output Capacitance, Cob -- pF
Gain-Bandwidth Product, f T -- MHz
3
3
2
3
2
2SA
141
2SC
364
7
3
10
7 0.01
2
3
5
7
2
0.1
3
5
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- mV
3
2
--100
7
Ta=
5
--25°C
25°C
3
2
7
2
--0.01
3
5
7
2
3
--0.1
Collector Current, IC -- A
5
7
--1.0
Ta=--25°C
7
3
7
2
--0.01
3
5
75°C
7
2
3
--0.1
Collector Current, IC -- A
5
7
--1.0
10
DC
s
op
era
tio
n
0.1
7
5
For PNP, minus sign is omitted
2SA1416 / 2SC3646
Single pulse Ta=25°C
Mounted on a ceramic board (250mm2✕0.8mm)
7 1.0
--25°C
25°C
3
7 0.01
2
3
5
7 0.1
2
3
5
7 1.0
2
ITR03537
VBE(sat) -- IC
2SC3646
IC / IB=10
5
3
2
Ta=--25°C
1.0
7
25°C
5
7 0.01
2
3
75°C
5
7 0.1
2
3
5
7
2
1.0
ITR03535
Collector Current, IC -- A
Collector Dissipation, PC -- W
0m
5
Ta=75°C
5
PC -- Ta
1.4
1m
ms s
10
3
2
0.01
7
5
7
2SA1416 / 2SC3646
IC=1A
2
100
1.6
ICP=2A
3
2
ITR03534
ASO
1.0
7
5
7 100
2
ITR03539
3
3
2
5
3
2
5
Collector Current, IC -- A
Base-to-Emitter
Saturation Voltage, VBE(sat) -- V
2
25°C
3
7
3
5
2
10
5
10
5
--1.0
7
2SC3646
IC / IB=10
2
2
2SA1416
IC / IB=10
7
5
VCE(sat) -- IC
ITR03536
VBE(sat) -- IC
--10
3
7
5
C
75°
2
1000
2SA1416
IC / IB=10
7
7 1.0
Collector-to-Base Voltage, VCB -- V
VCE(sat) -- IC
--1000
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- mV
For PNP, minus sign is omitted
2
7
1.0
ITR03538
Collector Current, IC -- A
Base-to-Emitter
Saturation Voltage, VBE(sat) -- V
6
5
For PNP, minus sign is omitted
Collector Current, IC -- A
6
10
2
3
5
7
10
2
3
5
Collector-to-Emitter Voltage, VCE --
1.3
M
ou
1.2
nt
ed
1.0
on
ac
er
am
ic
0.8
bo
ar
No h
0.5
d(
25
0.6
0.4
0m
m2
✕
eat s
ink
0.8
m
7 100
2
V ITR03540
0
m
)
0.2
0
20
40
60
80
100
120
Ambient Temperature, Ta -- °C
140
160
ITR03541
No.2005-4/7
2SA1416 / 2SC3646
Bag Packing Specification
2SA1416S-TD-E, 2SA1416T-TD-E, 2SC3646S-TD-E, 2SC3646T-TD-E
No.2005-5/7
2SA1416 / 2SC3646
Outline Drawing
Land Pattern Example
2SA1416S-TD-E, 2SA1416T-TD-E, 2SC3646S-TD-E, 2SC3646T-TD-E
Mass (g) Unit
0.058 mm
* For reference
Unit: mm
0.9
2.2
3.7
45°
45°
1.0
1.8
1.5
1.0
1.5
3.0
No.2005-6/7
2SA1416 / 2SC3646
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PS No.2005-7/7
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