Ordering number : EN7625A 2SJ652 P-Channel Power MOSFET http://onsemi.com –60V, –28A, 38mΩ, TO-220F-3SG Features • • • ON-resistance RDS(on)1=28.5mΩ(typ.) Input capacitance Ciss=4360pF (typ.) 4V drive Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Conditions Ratings VDSS VGSS Gate-to-Source Voltage Drain Current (DC) ID IDP Drain Current (Pulse) PW≤10μs, duty cycle≤1% Unit --60 V ±20 V --28 A --112 A 2.0 W Allowable Power Dissipation PD 30 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C Avalanche Energy (Single Pulse) *1 EAS IAV 343 mJ --28 A Avalanche Current *2 Tc=25°C Note : *1 VDD=--30V, L=500μH, IAV=--28A (Fig.1) *2 L≤500μH, single pulse Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Package Dimensions Product & Package Information unit : mm (typ) 7529-001 • Package • JEITA, JEDEC • Minimum Packing Quantity 2SJ652-1E 4.7 10.16 3.18 15.87 A J652 12.98 2.76 1.47 MAX 2 3 LOT No. DETAIL-A 0.8 1 (0.84) 0.5 FRAME 2.54 ( 1.0) EMC 2.54 Electrical Connection 2 3.23 15.8 Marking 6.68 3.3 2.54 : TO-220F-3SG : SC-67 : 50 pcs./magazine Semiconductor Components Industries, LLC, 2013 July, 2013 1 3 1 : Gate 2 : Drain 3 : Source TO-220F-3SG 51612QA TKIM TC-00002759/72503 TSIM TA-4245 No.7625-1/7 2SJ652 Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Symbol min typ --60 IGSS VGS(off) | yfs | ID=--1mA, VGS=0V VDS=--60V, VGS=0V VGS=±16V, VDS=0V VDS=--10V, ID=--1mA VDS=--10V, ID=--14A --1.2 Static Drain-to-Source On-State Resistance RDS(on)1 RDS(on)2 ID=--14A, VGS=--10V ID=--14A, VGS=--4V Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance V(BR)DSS IDSS Ratings Conditions max Unit V --1 μA ±10 μA --2.6 18 26 V S 28.5 38 mΩ 39 55.5 mΩ 4360 pF 470 pF Crss 335 pF Turn-ON Delay Time td(on) 33 ns Rise Time tr td(off) 210 ns Turn-OFF Delay Time Fall Time Total Gate Charge tf Qg Gate-to-Source Charge Qgs Gate-to-Drain “Miller” Charge Qgd Diode Forward Voltage VSD VDS=--20V, f=1MHz See Fig.2 ns 180 ns VDS=--30V, VGS=--10V, ID=--28A 80 nC 15 nC 12 IS=--28A, VGS=0V Fig.1 Avalanche Resistance Test Circuit 0V --10V ≥50Ω RG --1.2 V VDD= --30V VIN ID= --14A RL=2.1Ω VIN 2SJ652 VDD 50Ω nC --0.96 Fig.2 Switching Time Test Circuit L 0V --10V 310 D PW=10μs D.C.≤1% VOUT G 2SJ652 P.G 50Ω S Ordering Information Device 2SJ652-1E Package Shipping memo TO-220F-3SG 50pcs./magazine Pb Free No.7625-2/7 2SJ652 VDS= --10V --4V --20 25 --10 °C 75 °C --10 0 75°C 25 VGS= --3V --30 0 --0.5 --1.0 --1.5 --2.0 --2.5 --3.0 --3.5 --4.0 --4.5 Drain-to-Source Voltage, VDS -- V 0 --0.5 --1.0 --1.5 --2.0 --2.5 --3.0 --3.5 --4.0 --4.5 Gate-to-Source Voltage, VGS -- V IT06535 RDS(on) -- VGS 100 0 --5.0 Tc= --25 °C --20 Drain Current, ID -- A --30 Tc= --25° C --40 --40 Drain Current, ID -- A ID -- VGS --50 --6V --10 V Tc=25°C °C ID -- VDS --50 RDS(on) -- Tc 70 --5.0 IT06536 Tc=75°C 40 25°C --25°C 20 --5 --6 --7 --8 --9 Gate-to-Source Voltage, VGS -- V Forward Transfer Admittance, | yfs | -- S 100 7 Tc= 5°C --2 75° ° 5C 2 C 2 10 7 5 3 2 2 3 5 7 --1.0 2 3 5 7 --10 2 3 Drain Current, ID -- A 5 25 5 7 50 75 100 125 VGS=0V --1.0 7 5 3 2 --0.1 7 5 3 2 0 --0.3 --0.6 --0.9 --1.2 --1.5 Diode Forward Voltage, VSD -- V IT06540 Ciss, Coss, Crss -- VDS 7 f=1MHz Ciss 5 td(off) 150 IT06538 IF -- VSD IT06539 3 Ciss, Coss, Crss -- pF 3 2 tf 100 7 tr 5 td(on) 3 2 10 --0.1 0 --10 7 5 3 2 --0.01 7 5 3 2 --0.001 SW Time -- ID 7 --25 7 5 3 2 5 1.0 --0.1 10 Case Temperature, Tc -- °C VDS= --10V 3 20 IT06537 | yfs | -- ID 0V = --1 VGS 4A, --1 I D= 30 0 --50 --10 = -GS A, V 14 -I D= 40 C 25°C --4 4V 50 Tc=7 5° --3 60 --25°C 60 0 --2 Switching Time, SW Time -- ns Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 80 Forward Current, IF -- A Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ ID= --14A 2 1000 7 Coss Crss 5 3 2 VDD= --30V VGS= --10V 2 3 5 7 --1.0 2 3 5 7 --10 Drain Current, ID -- A 2 3 5 IT06541 100 0 --5 --10 --15 --20 --25 Drain-to-Source Voltage, VDS -- V --30 IT06542 No.7625-3/7 2SJ652 VGS -- Qg --10 --8 --7 --6 --5 --4 --3 --1 3 2 10 20 30 40 50 60 Total Gate Charge, Qg -- nC 70 80 0.5 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT06545 s 3 5 7 --1.0 2 3 5 7 --10 2 3 Drain-to-Source Voltage, VDS -- V Allowable Power Dissipation, PD -- W 1.0 20 2 PD -- Tc 40 1.5 0 1m s 10 ms 0m DC s op era tio n Tc=25°C Single pulse IT06559 2.0 0μ Operation in this area is limited by RDS(on). --0.1 --0.1 PD -- Ta 2.5 Allowable Power Dissipation, PD -- W 3 2 μs 10 10 --10 7 5 --2 0 10 ID= --28A 3 2 --1.0 7 5 0 IDP= --112A (PW≤10μs) --100 7 5 Drain Current, ID -- A Gate-to-Source Voltage, VGS -- V --9 0 ASO 3 2 5 7 --100 IT16830 35 30 25 20 15 10 5 0 0 20 40 60 80 100 120 Case Temperature, Tc -- °C 140 160 IT06544 No.7625-4/7 2SJ652 Magazine Specification 2SJ652-1E No.7625-5/7 2SJ652 Outline Drawing 2SJ652-1E Mass (g) Unit 1.8 mm * For reference No.7625-6/7 2SJ652 Note on usage : Since the 2SJ652 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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