2SJ652 D

Ordering number : EN7625A
2SJ652
P-Channel Power MOSFET
http://onsemi.com
–60V, –28A, 38mΩ, TO-220F-3SG
Features
•
•
•
ON-resistance RDS(on)1=28.5mΩ(typ.)
Input capacitance Ciss=4360pF (typ.)
4V drive
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Drain-to-Source Voltage
Conditions
Ratings
VDSS
VGSS
Gate-to-Source Voltage
Drain Current (DC)
ID
IDP
Drain Current (Pulse)
PW≤10μs, duty cycle≤1%
Unit
--60
V
±20
V
--28
A
--112
A
2.0
W
Allowable Power Dissipation
PD
30
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Avalanche Energy (Single Pulse) *1
EAS
IAV
343
mJ
--28
A
Avalanche Current *2
Tc=25°C
Note : *1 VDD=--30V, L=500μH, IAV=--28A (Fig.1)
*2 L≤500μH, single pulse
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
Product & Package Information
unit : mm (typ)
7529-001
• Package
• JEITA, JEDEC
• Minimum Packing Quantity
2SJ652-1E
4.7
10.16
3.18
15.87
A
J652
12.98
2.76
1.47 MAX
2
3
LOT No.
DETAIL-A
0.8
1
(0.84)
0.5
FRAME
2.54
( 1.0)
EMC
2.54
Electrical Connection
2
3.23
15.8
Marking
6.68
3.3
2.54
: TO-220F-3SG
: SC-67
: 50 pcs./magazine
Semiconductor Components Industries, LLC, 2013
July, 2013
1
3
1 : Gate
2 : Drain
3 : Source
TO-220F-3SG
51612QA TKIM TC-00002759/72503 TSIM TA-4245 No.7625-1/7
2SJ652
Electrical Characteristics at Ta=25°C
Parameter
Drain-to-Source Breakdown Voltage
Symbol
min
typ
--60
IGSS
VGS(off)
| yfs |
ID=--1mA, VGS=0V
VDS=--60V, VGS=0V
VGS=±16V, VDS=0V
VDS=--10V, ID=--1mA
VDS=--10V, ID=--14A
--1.2
Static Drain-to-Source On-State Resistance
RDS(on)1
RDS(on)2
ID=--14A, VGS=--10V
ID=--14A, VGS=--4V
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
V(BR)DSS
IDSS
Ratings
Conditions
max
Unit
V
--1
μA
±10
μA
--2.6
18
26
V
S
28.5
38
mΩ
39
55.5
mΩ
4360
pF
470
pF
Crss
335
pF
Turn-ON Delay Time
td(on)
33
ns
Rise Time
tr
td(off)
210
ns
Turn-OFF Delay Time
Fall Time
Total Gate Charge
tf
Qg
Gate-to-Source Charge
Qgs
Gate-to-Drain “Miller” Charge
Qgd
Diode Forward Voltage
VSD
VDS=--20V, f=1MHz
See Fig.2
ns
180
ns
VDS=--30V, VGS=--10V, ID=--28A
80
nC
15
nC
12
IS=--28A, VGS=0V
Fig.1 Avalanche Resistance Test Circuit
0V
--10V
≥50Ω
RG
--1.2
V
VDD= --30V
VIN
ID= --14A
RL=2.1Ω
VIN
2SJ652
VDD
50Ω
nC
--0.96
Fig.2 Switching Time Test Circuit
L
0V
--10V
310
D
PW=10μs
D.C.≤1%
VOUT
G
2SJ652
P.G
50Ω
S
Ordering Information
Device
2SJ652-1E
Package
Shipping
memo
TO-220F-3SG
50pcs./magazine
Pb Free
No.7625-2/7
2SJ652
VDS= --10V
--4V
--20
25
--10
°C
75
°C
--10
0
75°C
25
VGS= --3V
--30
0
--0.5
--1.0
--1.5
--2.0
--2.5
--3.0
--3.5
--4.0
--4.5
Drain-to-Source Voltage, VDS -- V
0
--0.5
--1.0
--1.5
--2.0
--2.5
--3.0
--3.5
--4.0
--4.5
Gate-to-Source Voltage, VGS -- V
IT06535
RDS(on) -- VGS
100
0
--5.0
Tc=
--25
°C
--20
Drain Current, ID -- A
--30
Tc=
--25°
C
--40
--40
Drain Current, ID -- A
ID -- VGS
--50
--6V
--10
V
Tc=25°C
°C
ID -- VDS
--50
RDS(on) -- Tc
70
--5.0
IT06536
Tc=75°C
40
25°C
--25°C
20
--5
--6
--7
--8
--9
Gate-to-Source Voltage, VGS -- V
Forward Transfer Admittance, | yfs | -- S
100
7
Tc=
5°C
--2
75°
°
5C
2
C
2
10
7
5
3
2
2
3
5
7 --1.0
2
3
5
7 --10
2
3
Drain Current, ID -- A
5
25
5
7
50
75
100
125
VGS=0V
--1.0
7
5
3
2
--0.1
7
5
3
2
0
--0.3
--0.6
--0.9
--1.2
--1.5
Diode Forward Voltage, VSD -- V
IT06540
Ciss, Coss, Crss -- VDS
7
f=1MHz
Ciss
5
td(off)
150
IT06538
IF -- VSD
IT06539
3
Ciss, Coss, Crss -- pF
3
2
tf
100
7
tr
5
td(on)
3
2
10
--0.1
0
--10
7
5
3
2
--0.01
7
5
3
2
--0.001
SW Time -- ID
7
--25
7
5
3
2
5
1.0
--0.1
10
Case Temperature, Tc -- °C
VDS= --10V
3
20
IT06537
| yfs | -- ID
0V
= --1
VGS
4A,
--1
I D=
30
0
--50
--10
= -GS
A, V
14
-I D=
40
C
25°C
--4
4V
50
Tc=7
5°
--3
60
--25°C
60
0
--2
Switching Time, SW Time -- ns
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
80
Forward Current, IF -- A
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
ID= --14A
2
1000
7
Coss
Crss
5
3
2
VDD= --30V
VGS= --10V
2
3
5
7 --1.0
2
3
5
7 --10
Drain Current, ID -- A
2
3
5
IT06541
100
0
--5
--10
--15
--20
--25
Drain-to-Source Voltage, VDS -- V
--30
IT06542
No.7625-3/7
2SJ652
VGS -- Qg
--10
--8
--7
--6
--5
--4
--3
--1
3
2
10
20
30
40
50
60
Total Gate Charge, Qg -- nC
70
80
0.5
40
60
80
100
120
Ambient Temperature, Ta -- °C
140
160
IT06545
s
3
5 7 --1.0
2
3
5 7 --10
2
3
Drain-to-Source Voltage, VDS -- V
Allowable Power Dissipation, PD -- W
1.0
20
2
PD -- Tc
40
1.5
0
1m
s
10 ms
0m
DC
s
op
era
tio
n
Tc=25°C
Single pulse
IT06559
2.0
0μ
Operation in this area
is limited by RDS(on).
--0.1
--0.1
PD -- Ta
2.5
Allowable Power Dissipation, PD -- W
3
2
μs
10
10
--10
7
5
--2
0
10
ID= --28A
3
2
--1.0
7
5
0
IDP= --112A (PW≤10μs)
--100
7
5
Drain Current, ID -- A
Gate-to-Source Voltage, VGS -- V
--9
0
ASO
3
2
5 7 --100
IT16830
35
30
25
20
15
10
5
0
0
20
40
60
80
100
120
Case Temperature, Tc -- °C
140
160
IT06544
No.7625-4/7
2SJ652
Magazine Specification
2SJ652-1E
No.7625-5/7
2SJ652
Outline Drawing
2SJ652-1E
Mass (g) Unit
1.8
mm
* For reference
No.7625-6/7
2SJ652
Note on usage : Since the 2SJ652 is a MOSFET product, please avoid using this device in the vicinity of
highly charged objects.
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PS No.7625-7/7
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