Ordering number : ENA1638B BFL4001 N-Channel Power MOSFET http://onsemi.com 900V, 6.5A, 2.7Ω, TO-220F-3FS Features • • ON-resistance RDS(on)=2.1Ω (typ.) 10V drive • Input capacitance Ciss=850pF (typ.) Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Conditions Ratings VDSS VGSS Gate-to-Source Voltage Unit 900 V ±30 V A IDc*1 Limited only by maximum temperature Tch=150°C 6.5 IDpack*2 Tc=25°C (Our ideal heat dissipation condition)*3 4.1 A Drain Current (Pulse) IDP PW≤10μs, duty cycle≤1% 13 A Allowable Power Dissipation PD 2.0 W Channel Temperature Drain Current (DC) 37 W Tch 150 °C Storage Temperature Tstg --55 to +150 °C Avalanche Energy (Single Pulse) *4 EAS IAV 223 mJ 6.5 A Avalanche Current *5 Tc=25°C (Our ideal heat dissipation condition)*3 Note : *1 Shows chip capability *2 Package limited *3 Our condition is radiation from backside. The method is applying silicone grease to the backside of the device and attaching the device to water-cooled radiator made of aluminium. *4 VDD=50V, L=10mH, IAV=6.5A *5 L≤10mH, single pulse Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Package Dimensions Product & Package Information unit : mm (typ) 7528-001 • Package : TO-220F-3FS • JEITA, JEDEC : SC-67 • Minimum Packing Quantity : 50 pcs./magazine 4.7 10.16 3.18 BFL4001-1E Marking Electrical Connection 6.68 3.3 2.54 3.23 15.8 15.87 2 FL4001 LOT No. 1 12.98 2.76 1.47 MAX 3 0.8 1 2.54 2 3 0.5 2.54 Semiconductor Components Industries, LLC, 2013 July, 2013 1 : Gate 2 : Drain 3 : Source TO-220F-3FS 62712 TKIM/22912 TKIM TC-00002729/31010QB TKIM TC-00002256 No. A1638-1/7 BFL4001 Electrical Characteristics at Ta=25°C Parameter Symbol Ratings Conditions Drain-to-Source Breakdown Voltage V(BR)DSS Zero-Gate Voltage Drain Current IDSS ID=10mA, VGS=0V VDS=720V, VGS=0V Gate-to-Source Leakage Current IGSS VGS=±30V, VDS=0V Cutoff Voltage VGS(off) Forward Transfer Admittance | yfs | VDS=10V, ID=1mA VDS=20V, ID=3.25A Static Drain-to-Source On-State Resistance RDS(on) ID=3.25A, VGS=10V Input Capacitance Ciss min typ Unit max 900 V 1.0 mA ±100 nA 2.0 1.8 4.0 3.6 V S 2.1 2.7 Ω 850 pF Output Capacitance Coss 130 pF Reverse Transfer Capacitance Crss 43 pF Turn-ON Delay Time 19 ns Rise Time td(on) tr 49 ns Turn-OFF Delay Time td(off) Fall Time tf Total Gate Charge Qg Gate-to-Source Charge Qgs Gate-to-Drain “Miller” Charge Qgd Diode Forward Voltage VSD Switching Time Test Circuit VDS=30V, f=1MHz See specified Test Circuit. VDS=200V, VGS=10V, ID=6.5A IS=6.5A, VGS=0V 156 ns 52 ns 44 nC 7.0 nC 22 nC 0.85 1.2 V Avalanche Resistance Test Circuit VDD=200V PW=10μs D.C.≤0.5% L ID=3.25A RL=61.5Ω VGS=10V D ≥50Ω RG VOUT BFL4001 10V 0V G VDD 50Ω BFL4001 P.G RGS=50Ω S Ordering Information Device BFL4001-1E Package Shipping memo TO-220F-3FS 50pcs./magazine Pb Free No. A1638-2/7 BFL4001 ID -- VDS 14 ID -- VGS 14 Tc=25°C 12 VDS=20V 12 10 20V Tc= --25°C Drain Current, ID -- A Drain Current, ID -- A 10V 7V 8 6 6V 4 5V 2 0 5 10 15 20 25 30 35 Drain-to-Source Voltage, VDS -- V 25°C 6 75°C 4 0 40 0 1 2 3 4 5 6 7 8 Gate-to-Source Voltage, VGS -- V IT15294 RDS(on) -- VGS 6 8 2 VGS=4V 0 10 RDS(on) -- Tc 7 9 10 IT15295 Tc=75°C 3 25°C 2 --25°C 1 4 5 6 7 8 9 10 11 12 13 Gate-to-Source Voltage, VGS -- V °C 25 2 1.0 = Tc 7 C 5° --2 °C 75 5 3 2 0.1 7 5 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 25 50 75 100 125 150 IT15297 IS -- VSD VGS=0V 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 SW Time -- ID 0.01 0.2 5 7 10 IT15298 0.4 0.6 0.8 1.0 Diode Forward Voltage, VSD -- V Ciss, Coss, Crss -- VDS 5 VDD=200V VGS=10V 1.2 IT15299 f=1MHz 3 2 3 td (off) 2 Ciss, Coss, Crss -- pF Switching Time, SW Time -- ns 5 0 3 2 Drain Current, ID -- A 7 --25 3 2 VDS=20V 3 1 Case Temperature, Tc -- °C Source Current, IS -- A Forward Transfer Admittance, | yfs | -- S 5 = V GS 2 0 --50 15 A .25 =3 , ID V 10 3 IT15296 | yfs | -- ID 7 14 4 Tc= 75°C 0 5 --25° C 4 6 25°C 5 Static Drain-to-Source On-State Resistance, RDS(on) -- Ω Static Drain-to-Source On-State Resistance, RDS(on) -- Ω ID=3.25A 100 7 5 tf 3 tr td(on) 2 Ciss 1000 7 5 3 2 Coss 100 7 5 Crs s 3 2 10 7 0.1 2 3 5 7 1.0 2 3 5 Drain Current, ID -- A 7 10 2 3 IT15300 10 0 5 10 15 20 25 30 35 40 Drain-to-Source Voltage, VDS -- V 45 50 IT15301 No. A1638-3/7 BFL4001 VGS -- Qg 10 8 Drain Current, ID -- A Gate-to-Source Voltage, VGS -- V 9 7 6 5 4 3 2 1 0 0 5 10 15 20 25 30 35 40 45 Total Gate Charge, Qg -- nC 0.5 20 40 60 80 100 120 140 Ambient Temperature, Ta -- °C Avalanche Energy derating factor -- % 160 IT15304 EAS -- Ta 120 IDpack(*2)=4.1A 1.0 7 5 3 2 Operation in this area is limited by RDS(on). 0.1 7 5 3 2 μs 0μ s *1. Shows chip capability *2. Our ideal heat dissipation condition Tc=25°C Single pulse 2 3 1m 10 s m DC 100 s ms op er ati on 5 7 1.0 2 3 5 7 10 2 3 5 7 100 2 3 Drain-to-Source Voltage, VDS -- V Allowable Power Dissipation, PD -- W Allowable Power Dissipation, PD -- W 1.0 0 10 PD -- Tc 40 1.5 10 IDc(*1)=6.5A 0.01 0.1 50 2.0 0 IDP=13A (PW≤10μs) 10 7 5 3 2 IT15302 PD -- Ta 2.5 ASO 100 7 5 3 2 VDS=200V ID=6.5A 5 71000 IT16791 37 35 30 25 20 15 10 5 0 0 20 40 60 80 100 120 Case Temperature, Tc -- °C 140 160 IT15305 100 80 60 40 20 0 0 25 50 75 100 125 Ambient Temperature, Ta -- °C 150 175 IT10478 No. A1638-4/7 BFL4001 Magazine Specification BFL4001-1E No. A1638-5/7 BFL4001 Outline Drawing BFL4001-1E Mass (g) Unit 1.8 mm * For reference No. A1638-6/7 BFL4001 Note on usage : Since the BFL4001 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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