BFL4001 D

Ordering number : ENA1638B
BFL4001
N-Channel Power MOSFET
http://onsemi.com
900V, 6.5A, 2.7Ω, TO-220F-3FS
Features
•
•
ON-resistance RDS(on)=2.1Ω (typ.)
10V drive
•
Input capacitance Ciss=850pF (typ.)
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Drain-to-Source Voltage
Conditions
Ratings
VDSS
VGSS
Gate-to-Source Voltage
Unit
900
V
±30
V
A
IDc*1
Limited only by maximum temperature Tch=150°C
6.5
IDpack*2
Tc=25°C (Our ideal heat dissipation condition)*3
4.1
A
Drain Current (Pulse)
IDP
PW≤10μs, duty cycle≤1%
13
A
Allowable Power Dissipation
PD
2.0
W
Channel Temperature
Drain Current (DC)
37
W
Tch
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Avalanche Energy (Single Pulse) *4
EAS
IAV
223
mJ
6.5
A
Avalanche Current *5
Tc=25°C (Our ideal heat dissipation condition)*3
Note : *1 Shows chip capability
*2 Package limited
*3 Our condition is radiation from backside.
The method is applying silicone grease to the backside of the device and attaching the device to water-cooled radiator made of aluminium.
*4 VDD=50V, L=10mH, IAV=6.5A
*5 L≤10mH, single pulse
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
Product & Package Information
unit : mm (typ)
7528-001
• Package
: TO-220F-3FS
• JEITA, JEDEC
: SC-67
• Minimum Packing Quantity : 50 pcs./magazine
4.7
10.16
3.18
BFL4001-1E
Marking
Electrical Connection
6.68
3.3
2.54
3.23
15.8
15.87
2
FL4001
LOT No.
1
12.98
2.76
1.47 MAX
3
0.8
1
2.54
2
3
0.5
2.54
Semiconductor Components Industries, LLC, 2013
July, 2013
1 : Gate
2 : Drain
3 : Source
TO-220F-3FS
62712 TKIM/22912 TKIM TC-00002729/31010QB TKIM TC-00002256 No. A1638-1/7
BFL4001
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Ratings
Conditions
Drain-to-Source Breakdown Voltage
V(BR)DSS
Zero-Gate Voltage Drain Current
IDSS
ID=10mA, VGS=0V
VDS=720V, VGS=0V
Gate-to-Source Leakage Current
IGSS
VGS=±30V, VDS=0V
Cutoff Voltage
VGS(off)
Forward Transfer Admittance
| yfs |
VDS=10V, ID=1mA
VDS=20V, ID=3.25A
Static Drain-to-Source On-State Resistance
RDS(on)
ID=3.25A, VGS=10V
Input Capacitance
Ciss
min
typ
Unit
max
900
V
1.0
mA
±100
nA
2.0
1.8
4.0
3.6
V
S
2.1
2.7
Ω
850
pF
Output Capacitance
Coss
130
pF
Reverse Transfer Capacitance
Crss
43
pF
Turn-ON Delay Time
19
ns
Rise Time
td(on)
tr
49
ns
Turn-OFF Delay Time
td(off)
Fall Time
tf
Total Gate Charge
Qg
Gate-to-Source Charge
Qgs
Gate-to-Drain “Miller” Charge
Qgd
Diode Forward Voltage
VSD
Switching Time Test Circuit
VDS=30V, f=1MHz
See specified Test Circuit.
VDS=200V, VGS=10V, ID=6.5A
IS=6.5A, VGS=0V
156
ns
52
ns
44
nC
7.0
nC
22
nC
0.85
1.2
V
Avalanche Resistance Test Circuit
VDD=200V
PW=10μs
D.C.≤0.5%
L
ID=3.25A
RL=61.5Ω
VGS=10V
D
≥50Ω
RG
VOUT
BFL4001
10V
0V
G
VDD
50Ω
BFL4001
P.G
RGS=50Ω
S
Ordering Information
Device
BFL4001-1E
Package
Shipping
memo
TO-220F-3FS
50pcs./magazine
Pb Free
No. A1638-2/7
BFL4001
ID -- VDS
14
ID -- VGS
14
Tc=25°C
12
VDS=20V
12
10
20V
Tc= --25°C
Drain Current, ID -- A
Drain Current, ID -- A
10V
7V
8
6
6V
4
5V
2
0
5
10
15
20
25
30
35
Drain-to-Source Voltage, VDS -- V
25°C
6
75°C
4
0
40
0
1
2
3
4
5
6
7
8
Gate-to-Source Voltage, VGS -- V
IT15294
RDS(on) -- VGS
6
8
2
VGS=4V
0
10
RDS(on) -- Tc
7
9
10
IT15295
Tc=75°C
3
25°C
2
--25°C
1
4
5
6
7
8
9
10
11
12
13
Gate-to-Source Voltage, VGS -- V
°C
25
2
1.0
=
Tc
7
C
5°
--2
°C
75
5
3
2
0.1
7
5
0.01
2
3
5 7 0.1
2
3
5 7 1.0
2
3
25
50
75
100
125
150
IT15297
IS -- VSD
VGS=0V
10
7
5
3
2
1.0
7
5
3
2
0.1
7
5
SW Time -- ID
0.01
0.2
5 7 10
IT15298
0.4
0.6
0.8
1.0
Diode Forward Voltage, VSD -- V
Ciss, Coss, Crss -- VDS
5
VDD=200V
VGS=10V
1.2
IT15299
f=1MHz
3
2
3
td (off)
2
Ciss, Coss, Crss -- pF
Switching Time, SW Time -- ns
5
0
3
2
Drain Current, ID -- A
7
--25
3
2
VDS=20V
3
1
Case Temperature, Tc -- °C
Source Current, IS -- A
Forward Transfer Admittance, | yfs | -- S
5
=
V GS
2
0
--50
15
A
.25
=3
, ID
V
10
3
IT15296
| yfs | -- ID
7
14
4
Tc=
75°C
0
5
--25°
C
4
6
25°C
5
Static Drain-to-Source
On-State Resistance, RDS(on) -- Ω
Static Drain-to-Source
On-State Resistance, RDS(on) -- Ω
ID=3.25A
100
7
5
tf
3
tr
td(on)
2
Ciss
1000
7
5
3
2
Coss
100
7
5
Crs
s
3
2
10
7
0.1
2
3
5
7 1.0
2
3
5
Drain Current, ID -- A
7
10
2
3
IT15300
10
0
5
10
15
20
25
30
35
40
Drain-to-Source Voltage, VDS -- V
45
50
IT15301
No. A1638-3/7
BFL4001
VGS -- Qg
10
8
Drain Current, ID -- A
Gate-to-Source Voltage, VGS -- V
9
7
6
5
4
3
2
1
0
0
5
10
15
20
25
30
35
40
45
Total Gate Charge, Qg -- nC
0.5
20
40
60
80
100
120
140
Ambient Temperature, Ta -- °C
Avalanche Energy derating factor -- %
160
IT15304
EAS -- Ta
120
IDpack(*2)=4.1A
1.0
7
5
3
2
Operation in
this area is
limited by RDS(on).
0.1
7
5
3
2
μs
0μ
s
*1. Shows chip capability
*2. Our ideal heat dissipation condition
Tc=25°C
Single pulse
2 3
1m
10 s
m
DC 100 s
ms
op
er
ati
on
5 7 1.0
2 3
5 7 10
2 3
5 7 100
2 3
Drain-to-Source Voltage, VDS -- V
Allowable Power Dissipation, PD -- W
Allowable Power Dissipation, PD -- W
1.0
0
10
PD -- Tc
40
1.5
10
IDc(*1)=6.5A
0.01
0.1
50
2.0
0
IDP=13A (PW≤10μs)
10
7
5
3
2
IT15302
PD -- Ta
2.5
ASO
100
7
5
3
2
VDS=200V
ID=6.5A
5 71000
IT16791
37
35
30
25
20
15
10
5
0
0
20
40
60
80
100
120
Case Temperature, Tc -- °C
140
160
IT15305
100
80
60
40
20
0
0
25
50
75
100
125
Ambient Temperature, Ta -- °C
150
175
IT10478
No. A1638-4/7
BFL4001
Magazine Specification
BFL4001-1E
No. A1638-5/7
BFL4001
Outline Drawing
BFL4001-1E
Mass (g) Unit
1.8
mm
* For reference
No. A1638-6/7
BFL4001
Note on usage : Since the BFL4001 is a MOSFET product, please avoid using this device in the vicinity of
highly charged objects.
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PS No. A1638-7/7
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