BMS4007 D

Ordering number : ENA1820
BMS4007
N-Channel Power MOSFET
http://onsemi.com
75V, 60A, 7.8mΩ, TO-220ML(LS)
Features
•
•
•
ON-resistance RDS(on)=6mΩ (typ.)
Input capacitance Ciss=9700pF (typ.)
10V drive
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Drain-to-Source Voltage
Conditions
Ratings
VDSS
VGSS
Gate-to-Source Voltage
Drain Current (DC)
ID
IDP
Drain Current (Pulse)
Unit
75
PW≤10μs, duty cycle≤1%
V
±20
V
60
A
240
A
2.0
W
Allowable Power Dissipation
PD
30
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Avalanche Energy (Single Pulse) *1
EAS
IAV
299
mJ
48
A
Avalanche Current *2
Tc=25°C
Note : *1 VDD=48V, L=100μH, IAV=48A (Fig.1)
*2 L≤100μH, Single pulse
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
Product & Package Information
unit : mm (typ)
7525-002
• Package
: TO-220ML(LS)
• JEITA, JEDEC
: SC-67, SOT-186A
• Minimum Packing Quantity : 100 pcs./bag or 50pcs./magazine
10.0
4.5
2.8
Marking
Electrical Connection
2
16.0
7.2
3.5
3.2
MS4007
3.6
LOT No.
1
1.6
14.0
1.2
3
0.75
1 2 3
2.4
0.7
2.55
2.55
1 : Gate
2 : Drain
3 : Source
TO-220ML(LS)
Semiconductor Components Industries, LLC, 2013
July, 2013
82510QA TK IM TC-00002454 No. A1820-1/5
BMS4007
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Ratings
Conditions
min
typ
Unit
max
75
Drain-to-Source Breakdown Voltage
V(BR)DSS
Zero-Gate Voltage Drain Current
IDSS
ID=1mA, VGS=0V
VDS=75V, VGS=0V
Gate-to-Source Leakage Current
IGSS
Cutoff Voltage
VGS(off)
VGS=±16V, VDS=0V
VDS=10V, ID=1mA
Forward Transfer Admittance
| yfs |
VDS=10V, ID=30A
Static Drain-to-Source On-State Resistance
RDS(on)
ID=30A, VGS=10V
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
V
10
μA
±10
μA
2
4
110
V
S
6
7.8
mΩ
9700
pF
540
pF
Crss
360
pF
Turn-ON Delay Time
td(on)
100
ns
Rise Time
tr
180
ns
Turn-OFF Delay Time
td(off)
460
ns
Fall Time
tf
160
ns
Total Gate Charge
Qg
160
nC
Gate-to-Source Charge
Qgs
40
nC
Gate-to-Drain “Miller” Charge
Qgd
Diode Forward Voltage
VSD
IS=60A, VGS=0V
0.9
Reverse Recovery Time
trr
Qrr
See Fig.3
70
ns
183
nC
Reverse Recovery Charge
VDS=20V, f=1MHz
See Fig.2
VDS=48V, VGS=10V, ID=60A
40
IS=60A, VGS=0V, di/dt=100A/μs
Fig.1 Avalanche Resistance Test Circuit
D
10V
0V
L
VDD=48V
VIN
ID=30A
RL=1.6Ω
VIN
G
BMS4007
S
50Ω
V
Fig.2 Switching Time Test Circuit
≥50Ω
10V
0V
nC
1.2
VDD
D
PW=10μs
D.C.≤1%
VOUT
G
BMS4007
P.G
50Ω
S
Fig.3 Reverse Recovery Time Test Circuit
BMS4007
D
L
G
S
VDD
Driver MOSFET
No. A1820-2/5
BMS4007
ID -- VDS
V 10V
6V
VDS=10V
40
60
40
25
°C
20
20
VGS=4V
0.6
0.8
1.0
1.2
1.4
Drain-to-Source Voltage, VDS -- V
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
ID=30A
Single pulse
16
14
12
10
Tc=75°C
8
25°C
6
--25°C
4
2
3
4
5
6
7
8
9
Gate-to-Source Voltage, VGS -- V
C
5°
=
Tc
--2
°C
75
10
7
5
2
2
3
5 7 1.0
2
3
5 7 10
2
3
Drain Current, ID -- A
5 7 100
VDD=48V
VGS=10V
td(off)
2
tf
td(on)
100
tr
5
0.1
5.5
6.0
IT15897
A
6
4
2
--25
0
25
50
75
100
125
150
IT15899
IS -- VSD
VGS=0V
Single pulse
100
7
5
3
2
10
7
5
3
2
1.0
7
5
3
2
0.1
7
5
3
2
0.01
0.2
0.4
0.6
0.8
1.0
1.2
1.4
IT15901
Ciss, Coss, Crss -- VDS
f=1MHz
2
Ciss
7
5
3
2
1000
Coss
Crss
7
5
7
5.0
=30
, ID
V
0
=1
V GS
8
10000
3
4.5
10
3
5
4.0
Diode Forward Voltage, VSD -- V
Ciss, Coss, Crss -- pF
Switching Time, SW Time -- ns
7
3.5
12
IT15900
SW Time -- ID
1000
3.0
Case Temperature, Tc -- °C
3
1.0
0.1
2.5
Single pulse
3
2
°C
25
2
2.0
RDS(on) -- Tc
0
--50
10
100
3
1.5
14
VDS=10V
7
5
1.0
Gate-to-Source Voltage, VGS -- V
Source Current, IS -- A
Forward Transfer Admittance, | yfs | -- S
2
0.5
IT15922
| yfs | -- ID
3
0
IT15896
RDS(on) -- VGS
18
0
1.6
--25°
C
0.4
5°C
25°C
0.2
Tc=
7
0
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
0
C
60
80
--25°
80
Tc=7
5°C
Drain Current, ID -- A
100
15
Drain Current, ID -- A
100
ID -- VGS
120
Tc=25°C
8V
120
3
2
3
5 7 1.0
2
3
5 7 10
Drain Current, ID -- A
2
3
5 7 100
IT15902
2
0
5
10
15
20
25
Drain-to-Source Voltage, VDS -- V
30
IT15903
No. A1820-3/5
BMS4007
VGS -- Qg
10
9
8
Drain Current, ID -- A
Gate-to-Source Voltage, VGS -- V
7
5
3
2
VDS=48V
ID=60A
7
6
5
4
3
1
0
50
100
150
200
Total Gate Charge, Qg -- nC
1.0
0.5
20
40
60
80
100
120
140
Ambient Temperature, Ta -- °C
Avalanche Energy derating factor -- %
IT15906
EAS -- Ta
120
160
1m
10 s
10 ms
ope
0m
rat
s
ion
Operation in
this area is
limited by RDS(on).
1.0
7
5
3
2
2
3
5 7 10
2
3
5 7 100
2
IT15905
Drain-to-Source Voltage, VDS -- V
Allowable Power Dissipation, PD -- W
Allowable Power Dissipation, PD -- W
1.5
0
DC
10
7
5
3
2
10μ
s
0μ
s
10
ID=60A
PD -- Tc
35
2.0
0
10
7
5
3
2
IT15904
PD -- Ta
2.5
IDP=240A (PW≤10μs)
0.1
7
5
3 Tc=25°C
2
Single pulse
0.01
2 3 5 7 1.0
0.1
2
0
ASO
30
25
20
15
10
5
0
0
20
40
60
80
100
120
Case Temperature, Tc -- °C
140
160
IT15907
100
80
60
40
20
0
0
25
50
75
100
125
Ambient Temperature, Ta -- °C
150
175
IT10478
No. A1820-4/5
BMS4007
Note on usage : Since the BMS4007 is a MOSFET product, please avoid using this device in the vicinity of
highly charged objects.
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PS No. A1820-5/5
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