BSS123LT1 D

BSS123LT1G,
BVSS123LT1G
Power MOSFET
170 mAmps, 100 Volts
N−Channel SOT−23
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170 mAMPS
100 VOLTS
RDS(on) = 6 W
Features
• BVSS Prefix for Automotive and Other Applications Requiring
•
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
These Devices are Pb−Free and are RoHS Compliant
N−Channel
3
MAXIMUM RATINGS
Rating
Drain−Source Voltage
Gate−Source Voltage
− Continuous
− Non−repetitive (tp ≤ 50 ms)
Drain Current
− Continuous (Note 1)
− Pulsed (Note 2)
Symbol
Value
Unit
VDSS
100
Vdc
VGS
VGSM
± 20
± 40
ID
0.17
0.68
1
Vdc
Vpk
2
Adc
IDM
MARKING DIAGRAM
& PIN ASSIGNMENT
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
Drain
3
3
1
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR−5 Board
(Note 3) TA = 25°C
Derate above 25°C
Thermal Resistance,
Junction−to−Ambient
Junction and Storage Temperature
SA MG
G
2
Symbol
Max
Unit
PD
225
1.8
mW
mW/°C
RqJA
556
°C/W
TJ, Tstg
−55 to +150
°C
1. The Power Dissipation of the package may result in a lower continuous drain
current.
2. Pulse Width v 300 ms, Duty Cycle v 2.0%.
3. FR−5 = 1.0 0.75 0.062 in.
SOT−23
CASE 318
STYLE 21
SA
M
G
1
Gate
2
Source
= Device Code
= Date Code
= Pb−Free Package
(*Note: Microdot may be in either location)
*Date Code orientation and/or position may
vary depending upon manufacturing location.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
© Semiconductor Components Industries, LLC, 2013
November, 2013 − Rev. 9
1
Publication Order Number:
BSS123LT1/D
BSS123LT1G, BVSS123LT1G
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
V(BR)DSS
100
−
−
Vdc
−
−
−
−
15
60
OFF CHARACTERISTICS
Drain−Source Breakdown Voltage
(VGS = 0, ID = 250 mAdc)
Zero Gate Voltage Drain Current
TJ = 25°C
(VGS = 0, VDS = 100 Vdc)
TJ = 125°C
IDSS
Gate−Body Leakage Current
(VGS = 20 Vdc, VDS = 0)
IGSS
−
−
50
nAdc
Gate Threshold Voltage
(VDS = VGS, ID = 1.0 mAdc)
VGS(th)
1.6
−
2.6
Vdc
Static Drain−Source On−Resistance
(VGS = 10 Vdc, ID = 100 mAdc)
rDS(on)
−
−
6.0
W
gfs
80
−
−
mmhos
Input Capacitance
(VDS = 25 Vdc, VGS = 0, f = 1.0 MHz)
Ciss
−
20
−
pF
Output Capacitance
(VDS = 25 Vdc, VGS = 0, f = 1.0 MHz)
Coss
−
9.0
−
pF
Reverse Transfer Capacitance
(VDS = 25 Vdc, VGS = 0, f = 1.0 MHz)
Crss
−
4.0
−
pF
td(on)
−
20
−
ns
td(off)
−
40
−
ns
VSD
−
−
1.3
V
mAdc
ON CHARACTERISTICS (Note 4)
Forward Transconductance
(VDS = 25 Vdc, ID = 100 mAdc)
DYNAMIC CHARACTERISTICS
SWITCHING CHARACTERISTICS(4)
Turn−On Delay Time
Turn−Off Delay Time
(VCC = 30 Vdc, IC = 0.28 Adc,
VGS = 10 Vdc, RGS = 50 W)
REVERSE DIODE
Diode Forward On−Voltage
(ID = 0.34 Adc, VGS = 0 Vdc)
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
ORDERING INFORMATION
Package
Shipping†
BSS123LT1G
SOT−23
(Pb−Free)
3000 / Tape & Reel
BSS123LT3G
SOT−23
(Pb−Free)
10000 / Tape & Reel
BVSS123LT1G*
SOT−23
(Pb−Free)
3000 / Tape & Reel
Device
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
*BVSS Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP
Capable.
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2
BSS123LT1G, BVSS123LT1G
TYPICAL ELECTRICAL CHARACTERISTICS
1.6
1.6
6V
1.0
5V
0.8
4V
0.6
0.4
3V
0.2
VGS, GATE−TO−SOURCE VOLTAGE (V)
0
1
2
4
3
5
6
8
7
9
1.2
1.0
0.8
0.6
TJ = 25°C
0.4
0
10
TJ = 150°C
1
TJ = −55°C
2
3
4
5
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
50
3.50
3.25
VGS = 4.5 V
3.00
2.75
VGS = 10 V
2.50
2.25
80
100
120
140
160
180
40
30
Ciss
20
Coss
10
0
200
Crss
0
30
40
50
60
70
80
Figure 3. On−Resistance vs. Drain Current and
Gate Voltage
Figure 4. Capacitance Variation
90 100
1
VGS = 0 V
8
6
QGS
TJ = 25°C
VGS = 10 V
VDS = 30 V
ID = 0.2 A
QGD
2
0
20
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
QT
4
10
ID, DRAIN CURRENT (mA)
10
6
TJ = 25°C
VGS = 0
TJ = 25°C
C, CAPACITANCE (pF)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
0
VDS = 10 V
0.2
IS, SOURCE CURRENT (A)
ID, DRAIN CURRENT (A)
1.2
1.4
ID, DRAIN CURRENT (A)
TJ = 25°C
1.4
VGS = 10 V
8V
0
1
2
3
4
5
6
7
0.1
0.01
0.001
TJ = 125°C
0.0001
8
0
0.2
TJ = 25°C
0.4
TJ = −55°C
0.6
0.8
1.0
QG, TOTAL GATE CHARGE (nC)
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 5. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
Figure 6. Diode Forward Voltage vs. Current
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3
1.2
BSS123LT1G, BVSS123LT1G
TYPICAL ELECTRICAL CHARACTERISTICS
ID, DRAIN CURRENT (A)
1
0 V ≤ VGS ≤ 20 V
SINGLE PULSE
TA = 25°C
TJ = 150°C
100 ms
1 ms
10 ms
0.1
100 ms
0.01
0.001
0.1
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
1
dc
10
100
1000
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
r(t), EFFECTIVE TRANSIENT THERMAL
RESPONSE RESISTANCE
Figure 7. Maximum Rated Forward Biased
Safe Operating Area
1000
D = 0.5
100
10
0.2
0.1
0.05
0.02
0.01
1
Single Pulse
0.1
0.00001
0.000001
1 oz. Cu Pad, 5mm thick, 25mm2 area
0.0001
0.001
0.01
0.1
t, TIME (s)
Figure 8. Thermal Response
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4
1
10
100
1000
BSS123LT1G, BVSS123LT1G
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AP
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH
THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
D
SEE VIEW C
3
HE
E
DIM
A
A1
b
c
D
E
e
L
L1
HE
q
c
1
2
e
b
0.25
q
A
L
A1
MIN
0.89
0.01
0.37
0.09
2.80
1.20
1.78
0.10
0.35
2.10
0°
MILLIMETERS
NOM
MAX
1.00
1.11
0.06
0.10
0.44
0.50
0.13
0.18
2.90
3.04
1.30
1.40
1.90
2.04
0.20
0.30
0.54
0.69
2.40
2.64
−−−
10 °
MIN
0.035
0.001
0.015
0.003
0.110
0.047
0.070
0.004
0.014
0.083
0°
INCHES
NOM
0.040
0.002
0.018
0.005
0.114
0.051
0.075
0.008
0.021
0.094
−−−
MAX
0.044
0.004
0.020
0.007
0.120
0.055
0.081
0.012
0.029
0.104
10°
STYLE 21:
PIN 1. GATE
2. SOURCE
3. DRAIN
L1
VIEW C
SOLDERING FOOTPRINT*
0.95
0.037
0.95
0.037
2.0
0.079
0.9
0.035
SCALE 10:1
0.8
0.031
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks,
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limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications
and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC
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For additional information, please contact your local
Sales Representative
BSS123LT1/D
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