BSS138LT1 D

BSS138L, BVSS138L
Power MOSFET
200 mA, 50 V
N−Channel SOT−23
Typical applications are DC−DC converters, power management in
portable and battery−powered products such as computers, printers,
PCMCIA cards, cellular and cordless telephones.
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200 mA, 50 V
RDS(on) = 3.5 W
Features
• Low Threshold Voltage (VGS(th): 0.5 V−1.5 V) Makes it Ideal for
Low Voltage Applications
N−Channel
3
• Miniature SOT−23 Surface Mount Package Saves Board Space
• BVSS Prefix for Automotive and Other Applications Requiring
•
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
These Devices are Pb−Free and are RoHS Compliant
1
2
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Value
Unit
Drain−to−Source Voltage
VDSS
50
Vdc
Gate−to−Source Voltage − Continuous
VGS
± 20
Vdc
2
mA
SOT−23
CASE 318
STYLE 21
Drain Current
− Continuous @ TA = 25°C
− Pulsed Drain Current (tp ≤ 10 ms)
ID
IDM
200
800
Total Power Dissipation @ TA = 25°C
PD
225
mW
Operating and Storage Temperature
Range
TJ, Tstg
− 55 to 150
°C
RqJA
556
°C/W
TL
260
°C
Thermal Resistance,
Junction−to−Ambient
Maximum Lead Temperature for
Soldering Purposes, for 10 seconds
MARKING
DIAGRAM
3
Symbol
Rating
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1
J1 M G
G
1
J1
= Device Code
M
= Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
Package
Shipping†
BSS138LT1G
SOT−23
(Pb−Free)
3000 / Tape & Reel
BVSS138LT1G
SOT−23
(Pb−Free)
3000 / Tape & Reel
BSS138LT3G
SOT−23 10,000 / Tape & Reel
(Pb−Free)
Device
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2013
July, 2013 − Rev. 8
1
Publication Order Number:
BSS138LT1/D
BSS138L, BVSS138L
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
V(BR)DSS
50
−
−
Vdc
−
−
−
−
−
−
0.1
0.5
5.0
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
(VGS = 0 Vdc, ID = 250 mAdc)
Zero Gate Voltage Drain Current
(VDS = 25 Vdc, VGS = 0 Vdc, 25°C)
(VDS = 50 Vdc, VGS = 0 Vdc, 25°C)
(VDS = 50 Vdc, VGS = 0 Vdc, 150°C)
IDSS
Gate−Source Leakage Current (VGS = ± 20 Vdc, VDS = 0 Vdc)
IGSS
−
−
±0.1
mAdc
Gate−Source Threshold Voltage
(VDS = VGS, ID = 1.0 mAdc)
VGS(th)
0.5
−
1.5
Vdc
Static Drain−to−Source On−Resistance
(VGS = 2.75 Vdc, ID < 200 mAdc, TA = −40°C to +85°C)
(VGS = 5.0 Vdc, ID = 200 mAdc)
rDS(on)
−
−
5.6
−
10
3.5
gfs
100
−
−
mmhos
pF
mAdc
ON CHARACTERISTICS (Note 1)
Forward Transconductance
(VDS = 25 Vdc, ID = 200 mAdc, f = 1.0 kHz)
W
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 25 Vdc, VGS = 0, f = 1 MHz)
Ciss
−
40
50
Output Capacitance
(VDS = 25 Vdc, VGS = 0, f = 1 MHz)
Coss
−
12
25
Transfer Capacitance
(VDG = 25 Vdc, VGS = 0, f = 1 MHz)
Crss
−
3.5
5.0
td(on)
−
−
20
td(off)
−
−
20
SWITCHING CHARACTERISTICS (Note 2)
Turn−On Delay Time
Turn−Off Delay Time
(VDD = 30 Vdc, ID = 0.2 Adc,)
1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
2. Switching characteristics are independent of operating junction temperature.
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2
ns
BSS138L, BVSS138L
TYPICAL ELECTRICAL CHARACTERISTICS
0.8
0.9
VGS = 3.5 V
TJ = 25°C
I D , DRAIN CURRENT (AMPS)
I D , DRAIN CURRENT (AMPS)
VGS = 3.25 V
0.6
VGS = 3.0 V
0.5
VGS = 2.75 V
0.4
VGS = 2.5 V
0.3
0.2
0.1
0
VDS = 10 V
0.8
0.7
- 55°C
0.7
150°C
0.6
0.5
0.4
0.3
0.2
0.1
0
1
0
3
2
4
5
6
7
9
8
10
0
1.5
2
2.5
3.5
3
4
4.5
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
Figure 1. On−Region Characteristics
2.2
1.25
ID = 1.0 mA
2
Vgs(th) , VARIANCE (VOLTS)
VGS = 10 V
ID = 0.8 A
1.8
1.6
VGS = 4.5 V
ID = 0.5 A
1.4
1.2
1
1.125
1
0.875
0.8
0.6
-55
-5
45
95
0.75
-55
145
-30
-5
45
20
95
70
120
TJ, JUNCTION TEMPERATURE (°C)
TJ, JUNCTION TEMPERATURE (°C)
Figure 3. On−Resistance Variation with
Temperature
Figure 4. Threshold Voltage Variation
with Temperature
145
1.0E-5
10
VDS = 40 V
TJ = 25°C
IDSS, DRAIN-TO-SOURCE LEAKAGE (A)
RDS(on) , DRAIN-TO-SOURCE RESISTANCE
(NORMALIZED)
1
0.5
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
25°C
8
6
4
ID = 200 mA
2
1.0E-6
150°C
125°C
1.0E-7
1.0E-8
1.0E-9
0
0
500
1000
1500
2000
2500
0
3000
QT, TOTAL GATE CHARGE (pC)
5
10
15
20
25
30
35
40
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
Figure 5. Gate Charge
Figure 6. IDSS
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3
45
50
BSS138L, BVSS138L
10
VGS = 2.5 V
9
8
150°C
7
6
5
25°C
4
-55°C
3
2
1
0
0.1
0.05
0.2
0.15
0.25
RDS(on) , DRAIN-TO-SOURCE RESISTANCE (OHMS)
RDS(on) , DRAIN-TO-SOURCE RESISTANCE (OHMS)
TYPICAL ELECTRICAL CHARACTERISTICS
8
VGS = 2.75 V
7
150°C
6
5
4
25°C
3
2
-55°C
1
0
RDS(on) , DRAIN-TO-SOURCE RESISTANCE (OHMS)
RDS(on) , DRAIN-TO-SOURCE RESISTANCE (OHMS)
VGS = 4.5 V
150°C
5
4.5
4
3.5
3
25°C
2.5
2
-55°C
1.5
1
0.05
0.1
0.15
0.2
0.25
0.3
0.35
0.45
0.4
0.5
4.5
VGS = 10 V
150°C
4
3.5
3
2.5
25°C
2
-55°C
1.5
1
0
0.05
0.1
ID, DRAIN CURRENT (AMPS)
0.15
0.2
0.25
0.3
0.35
0.4
0.45
0.5
ID, DRAIN CURRENT (AMPS)
Figure 10. On−Resistance versus Drain
Current
Figure 9. On−Resistance versus Drain Current
1
I D , DIODE CURRENT (AMPS)
0.25
Figure 8. On−Resistance versus Drain Current
6
0
0.2
0.15
ID, DRAIN CURRENT (AMPS)
Figure 7. On−Resistance versus Drain Current
5.5
0.1
0.05
ID, DRAIN CURRENT (AMPS)
120
100
TJ = 150°C
0.1
25°C
-55°C
80
60
Ciss
0.01
40
Coss
20
0.001
Crss
0
0.2
0.4
0.6
0.8
1.0
0
1.2
0
5
10
15
VSD, DIODE FORWARD VOLTAGE (VOLTS)
Figure 11. Body Diode Forward Voltage
Figure 12. Capacitance
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4
20
25
BSS138L, BVSS138L
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AP
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH
THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
D
SEE VIEW C
3
HE
E
DIM
A
A1
b
c
D
E
e
L
L1
HE
q
c
1
2
e
b
0.25
q
A
L
A1
MIN
0.89
0.01
0.37
0.09
2.80
1.20
1.78
0.10
0.35
2.10
0°
MILLIMETERS
NOM
MAX
1.00
1.11
0.06
0.10
0.44
0.50
0.13
0.18
2.90
3.04
1.30
1.40
1.90
2.04
0.20
0.30
0.54
0.69
2.40
2.64
−−−
10 °
MIN
0.035
0.001
0.015
0.003
0.110
0.047
0.070
0.004
0.014
0.083
0°
INCHES
NOM
0.040
0.002
0.018
0.005
0.114
0.051
0.075
0.008
0.021
0.094
−−−
MAX
0.044
0.004
0.020
0.007
0.120
0.055
0.081
0.012
0.029
0.104
10°
STYLE 21:
PIN 1. GATE
2. SOURCE
3. DRAIN
L1
VIEW C
SOLDERING FOOTPRINT*
0.95
0.037
0.95
0.037
2.0
0.079
0.9
0.035
SCALE 10:1
0.8
0.031
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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5
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BSS138LT1/D
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