ETC BSS138LT1/D

BSS138LT1
Preferred Device
Power MOSFET
200 mAmps, 50 Volts
N–Channel SOT–23
Typical applications are dc–dc converters, power management in
portable and battery–powered products such as computers, printers,
PCMCIA cards, cellular and cordless telephones.
• Low Threshold Voltage (VGS(th): 0.5V...1.5V) makes it ideal for low
voltage applications
• Miniature SOT–23 Surface Mount Package saves board space
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200 mAMPS
50 VOLTS
RDS(on) = 3.5 MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Symbol
Value
Unit
VDSS
50
Vdc
Gate–to–Source Voltage – Continuous
VGS
± 20
Vdc
Drain Current
– Continuous @ TA = 25°C
– Pulsed Drain Current (tp ≤ 10 µs)
ID
IDM
200
800
Total Power Dissipation @ TA = 25°C
PD
225
mW
Operating and Storage Temperature
Range
TJ, Tstg
– 55 to
150
°C
RθJA
556
°C/W
TL
260
°C
Rating
Drain–to–Source Voltage
Thermal Resistance – Junction–to–Ambient
Maximum Lead Temperature for Soldering
Purposes, for 10 seconds
N–Channel
3
mA
1
2
MARKING
DIAGRAM
3
SOT–23
CASE 318
STYLE 21
1
J1
W
2
W
= Work Week
PIN ASSIGNMENT
Drain
3
1
2
Source
Gate
ORDERING INFORMATION
Device
Package
Shipping
BSS138LT1
SOT–23
3000 Tape & Reel
BSS138LT3
SOT–23
10,000 Tape & Reel
Preferred devices are recommended choices for future use
and best overall value.
 Semiconductor Components Industries, LLC, 2000
November, 2000 – Rev. 2
1
Publication Order Number:
BSS138LT1/D
BSS138LT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
V(BR)DSS
50
–
–
Vdc
–
–
–
–
0.1
0.5
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 250 µAdc)
µAdc
Zero Gate Voltage Drain Current
(VDS = 25 Vdc, VGS = 0 Vdc)
(VDS = 50 Vdc, VGS = 0 Vdc)
IDSS
Gate–Source Leakage Current (VGS = ± 20 Vdc, VDS = 0 Vdc)
IGSS
–
–
±0.1
µAdc
Gate–Source Threshold Voltage
(VDS = VGS, ID = 1.0 mAdc)
VGS(th)
0.5
–
1.5
Vdc
Static Drain–to–Source On–Resistance
(VGS = 2.75 Vdc, ID < 200 mAdc, TA = –40°C to +85°C)
(VGS = 5.0 Vdc, ID = 200 mAdc)
rDS(on)
–
–
5.6
–
10
3.5
gfs
100
–
–
mmhos
(VDS = 25 Vdc, VGS = 0, f = 1 MHz)
Ciss
–
40
50
pF
Output Capacitance
(VDS = 25 Vdc, VGS = 0, f = 1 MHz)
Coss
–
12
25
Transfer Capacitance
(VDG = 25 Vdc, VGS = 0, f = 1 MHz)
Crss
–
3.5
5.0
td(on)
–
–
20
td(off)
–
–
20
ON CHARACTERISTICS (Note 1.)
Forward Transconductance
(VDS = 25 Vdc, ID = 200 mAdc, f = 1.0 kHz)
Ohms
DYNAMIC CHARACTERISTICS
Input Capacitance
SWITCHING CHARACTERISTICS (Note 2.)
Turn–On Delay Time
Turn–Off Delay Time
(VDD = 30 Vdc,
Vdc ID = 0.2
0 2 Adc,)
Adc )
1. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.
2. Switching characteristics are independent of operating junction temperature.
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2
ns
BSS138LT1
TYPICAL ELECTRICAL CHARACTERISTICS
0.7
0.9
VGS = 3.5 V
TJ = 25°C
VGS = 3.25 V
0.6
VGS = 3.0 V
0.5
VGS = 2.75 V
0.4
VGS = 2.5 V
0.3
0.2
0.1
0
VDS = 10 V
0.8
I D , DRAIN CURRENT (AMPS)
I D , DRAIN CURRENT (AMPS)
0.8
-55°C
0.7
150°C
0.6
0.5
0.4
0.3
0.2
0.1
0
1
2
3
4
5
6
7
8
9
0
10
0
0.5
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
1
1.5
2
2.5
3
3.5
4
4.5
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
Figure 1. On–Region Characteristics
2.2
1.25
ID = 1.0 mA
2
Vgs(th) , VARIANCE (VOLTS)
VGS = 10 V
ID = 0.8 A
1.8
1.6
VGS = 4.5 V
ID = 0.5 A
1.4
1.2
1
1.125
1
0.875
0.8
0.6
-55
-5
45
95
0.75
-55
145
-30
-5
20
45
70
95
120
TJ, JUNCTION TEMPERATURE (°C)
TJ, JUNCTION TEMPERATURE (°C)
Figure 3. On–Resistance Variation with
Temperature
Figure 4. Threshold Voltage Variation
with Temperature
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
RDS(on) , DRAIN-TO-SOURCE RESISTANCE
(NORMALIZED)
25°C
10
VDS = 40 V
TJ = 25°C
8
6
4
ID = 200 mA
2
0
0
500
1000
1500
2000
QT, TOTAL GATE CHARGE (pC)
Figure 5. Gate Charge
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3
2500
3000
145
BSS138LT1
10
VGS = 2.5 V
9
8
150°C
7
6
5
25°C
4
-55°C
3
2
1
0.05
0
0.15
0.1
0.25
0.2
ID, DRAIN CURRENT (AMPS)
RDS(on) , DRAIN-TO-SOURCE RESISTANCE (OHMS)
RDS(on) , DRAIN-TO-SOURCE RESISTANCE (OHMS)
TYPICAL ELECTRICAL CHARACTERISTICS
8
5
4
RDS(on) , DRAIN-TO-SOURCE RESISTANCE (OHMS)
RDS(on) , DRAIN-TO-SOURCE RESISTANCE (OHMS)
150°C
5
4.5
4
3.5
3
25°C
2.5
2
-55°C
1.5
1
0
0.05
0.1
0.15
0.2
0.25
0.3
0.35
0.45
0.4
25°C
3
2
1
-55°C
0.05
0
0.25
0.2
ID, DRAIN CURRENT (AMPS)
0.5
4.5
VGS = 10 V
4
150°C
3.5
3
2.5
25°C
2
-55°C
1.5
1
0
0.05
0.1
ID, DRAIN CURRENT (AMPS)
0.15
0.2
0.25
0.3
0.35
0.4
0.45
0.5
ID, DRAIN CURRENT (AMPS)
Figure 9. On–Resistance versus Drain Current
Figure 8. On–Resistance versus Drain Current
1
I D , DIODE CURRENT (AMPS)
0.15
0.1
Figure 7. On–Resistance versus Drain Current
VGS = 4.5 V
5.5
150°C
6
Figure 6. On–Resistance versus Drain Current
6
VGS = 2.75 V
7
120
100
TJ = 150°C
0.1
25°C
-55°C
80
60
0.01
Ciss
40
Coss
20
0.001
0
0.2
0.4
0.6
0.8
1.0
0
1.2
Crss
0
5
10
15
VSD, DIODE FORWARD VOLTAGE (VOLTS)
Figure 10. Body Diode Forward Voltage
Figure 11. Capacitance
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4
20
25
BSS138LT1
INFORMATION FOR USING THE SOT–23 SURFACE MOUNT PACKAGE
MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS
Surface mount board layout is a critical portion of the
total design. The footprint for the semiconductor packages
must be the correct size to insure proper solder connection
interface between the board and the package. With the
correct pad geometry, the packages will self align when
subjected to a solder reflow process.
0.037
0.95
0.037
0.95
0.079
2.0
0.035
0.9
0.031
0.8
inches
mm
SOT–23 POWER DISSIPATION
one can calculate the power dissipation of the device which
in this case is 225 milliwatts.
The power dissipation of the SOT–23 is a function of the
drain pad size. This can vary from the minimum pad size
for soldering to a pad size given for maximum power
dissipation. Power dissipation for a surface mount device is
determined by TJ(max), the maximum rated junction
temperature of the die, RθJA, the thermal resistance from
the device junction to ambient, and the operating
temperature, TA. Using the values provided on the data
sheet for the SOT–23 package, PD can be calculated as
follows:
PD =
PD =
150°C – 25°C
556°C/W
= 225 milliwatts
The 556°C/W for the SOT–23 package assumes the use
of the recommended footprint on a glass epoxy printed
circuit board to achieve a power dissipation of 225
milliwatts. There are other alternatives to achieving higher
power dissipation from the SOT–23 package. Another
alternative would be to use a ceramic substrate or an
aluminum core board such as Thermal Clad. Using a
board material such as Thermal Clad, an aluminum core
board, the power dissipation can be doubled using the same
footprint.
TJ(max) – TA
RθJA
The values for the equation are found in the maximum
ratings table on the data sheet. Substituting these values
into the equation for an ambient temperature TA of 25°C,
SOLDERING PRECAUTIONS
• The soldering temperature and time shall not exceed
260°C for more than 10 seconds.
• When shifting from preheating to soldering, the
maximum temperature gradient shall be 5°C or less.
• After soldering has been completed, the device should
be allowed to cool naturally for at least three minutes.
Gradual cooling should be used as the use of forced
cooling will increase the temperature gradient and
result in latent failure due to mechanical stress.
• Mechanical stress or shock should not be applied
during cooling.
The melting temperature of solder is higher than the rated
temperature of the device. When the entire device is heated
to a high temperature, failure to complete soldering within
a short time could result in device failure. Therefore, the
following items should always be observed in order to
minimize the thermal stress to which the devices are
subjected.
• Always preheat the device.
• The delta temperature between the preheat and
soldering should be 100°C or less.*
• When preheating and soldering, the temperature of the
leads and the case must not exceed the maximum
temperature ratings as shown on the data sheet. When
using infrared heating with the reflow soldering
method, the difference shall be a maximum of 10°C.
* Soldering a device without preheating can cause
excessive thermal shock and stress which can result in
damage to the device.
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5
BSS138LT1
PACKAGE DIMENSIONS
SOT–23 (TO–236)
CASE 318–08
ISSUE AF
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS OF
BASE MATERIAL.
A
L
3
1
V
B S
2
G
C
D
H
J
K
DIM
A
B
C
D
G
H
J
K
L
S
V
INCHES
MIN
MAX
0.1102 0.1197
0.0472 0.0551
0.0350 0.0440
0.0150 0.0200
0.0701 0.0807
0.0005 0.0040
0.0034 0.0070
0.0140 0.0285
0.0350 0.0401
0.0830 0.1039
0.0177 0.0236
STYLE 21:
PIN 1. GATE
2. SOURCE
3. DRAIN
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6
MILLIMETERS
MIN
MAX
2.80
3.04
1.20
1.40
0.89
1.11
0.37
0.50
1.78
2.04
0.013
0.100
0.085
0.177
0.35
0.69
0.89
1.02
2.10
2.64
0.45
0.60
BSS138LT1
Notes
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7
BSS138LT1
Thermal Clad is a registered trademark of the Bergquist Company.
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes
without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular
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including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or
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BSS138LT1/D