MBR4015CTLG Switch-mode Power Rectifier Features and Benefits • • • • • • Low Forward Voltage Low Power Loss/High Efficiency High Surge Capacity 150°C Operating Junction Temperature 40 A Total (20 A Per Diode Leg) This Device is Pb−Free and is RoHS Compliant* www.onsemi.com SCHOTTKY BARRIER RECTIFIER 40 AMPERES, 15 VOLTS Applications • Power Supply – Output Rectification • Power Management • Instrumentation 1 2, 4 3 4 Mechanical Characteristics • • • • • • Case: Epoxy, Molded Epoxy Meets UL 94, V−0 @ 0.125 in Weight: 1.9 Grams (Approximately) Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable Lead Temperatures for Soldering Purposes: 260°C Max. for 10 Seconds ESD Rating: Human Body Model 3B Machine Model C 1 2 3 TO−220 STYLE 6 CASE 221A MARKING DIAGRAM AY WW B4015LG AKA A = Assembly Location Y = Year WW = Work Week B4015L = Device Code G = Pb−Free Package AKA = Polarity Designator ORDERING INFORMATION *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2015 January, 2015 − Rev. 7 1 Device Package MBR4015CTLG TO−220 (Pb−Free) Shipping 50 Units/Rail Publication Order Number: MBR4015CTL/D MBR4015CTLG MAXIMUM RATINGS Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Rating VRRM VRWM VR 15 V Average Rectified Forward Current (TC = 140°C per Diode) (TC = 140°C per Device) IF(AV) Peak Repetitive Forward Current, per Diode (Square Wave, 20 kHz, TC = 135°C) IFRM 40 A Non−Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions, Halfwave, Single Phase, 60 Hz) IFSM 150 A Peak Repetitive Reverse Surge Current (2.0 ms, 1.0 kHz) IRRM 1.0 A Storage Temperature Range Tstg −65 to +175 °C Operating Junction Temperature (Note 1) TJ −65 to +150 °C dv/dt 1,000 V/ms A 20 40 Voltage Rate of Change (Rated VR) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RqJA. THERMAL CHARACTERISTICS (Per Diode) Conditions Symbol Max Unit Maximum Thermal Resistance, Junction−to−Case Characteristic Min. Pad RqJC 1.3 °C/W Maximum Thermal Resistance, Junction−to−Ambient Min. Pad RqJA 70 Min Typical Max − − − − 0.31 0.45 0.41 0.51 0.34 0.50 0.43 0.54 − − 300 0.8 600 10 ELECTRICAL CHARACTERISTICS Characteristic Symbol Instantaneous Forward Voltage (Note 2) (iF = 20 A, Tj = 125°C) (iF = 40 A, Tj = 125°C) (iF = 20 A, Tj = 25°C) (iF = 40 A, Tj = 25°C) vF Instantaneous Reverse Current (Note 2) (Rated dc Voltage, Tj = 125°C) (Rated dc Voltage, Tj = 25°C) iR Unit V mA 100 10 IF, INSTANTANEOUS FORWARD CURRENT (A) IF, INSTANTANEOUS FORWARD CURRENT (A) Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%. 150°C 125°C 100°C 1.0 75°C 25°C 0.1 0 0.1 0.2 0.3 0.4 0.6 0.5 VF, INSTANTANEOUS FORWARD VOLTAGE (V) 100 125°C 10 150°C 100°C 75°C 25°C 1.0 0.1 0 Figure 1. Typical Forward Voltage 0.1 0.2 0.3 0.4 0.5 VF, INSTANTANEOUS FORWARD VOLTAGE (V) Figure 2. Maximum Forward Voltage www.onsemi.com 2 0.6 IF(AV), AVERAGE FORWARD CURRENT (A) MBR4015CTLG IR, REVERSE CURRENT (A) 1.0 125°C 0.1 100°C 75°C 0.01 0.001 25°C 0.0001 2.0 4.0 6.0 8.0 12 10 14 16 dc 28 24 Square Wave 20 16 12 8.0 4.0 0 125 130 135 140 145 150 TC, CASE TEMPERATURE (°C) Figure 3. Typical Reverse Current Figure 4. Current Derating, Case, Per Leg 30 28 26 24 dc 22 20 18 16 14 Square Wave 12 10 8.0 6.0 4.0 RqJA = 70°C/W 2.0 No Heatsink 0 0 25 50 PF(AV), AVERAGE POWER DISSIPATION (W) VR, REVERSE VOLTAGE (V) RqJA = 16°C/W dc Square Wave 75 100 125 150 175 12 TJ = 150°C 10 Square Wave dc 8.0 6.0 4.0 2.0 0 0 2.0 4.0 6.0 8.0 10 12 14 16 18 20 22 24 26 IF(AV), AVERAGE FORWARD CURRENT (A) Figure 5. Current Derating, Ambient, Per Leg Figure 6. Forward Power Dissipation 7000 6000 5000 4000 3000 2000 1000 0 0 2.0 4.0 6.0 8.0 10 12 VR, REVERSE VOLTAGE (V) Figure 7. Typical Capacitance www.onsemi.com 3 155 14 TA, AMBIENT TEMPERATURE (°C) C, CAPACITANCE (pF) IF(AV), AVERAGE FORWARD CURRENT (A) 0 34 32 14 16 MBR4015CTLG PACKAGE DIMENSIONS TO−220 CASE 221A−09 ISSUE AH −T− B SEATING PLANE C F T S 4 DIM A B C D F G H J K L N Q R S T U V Z A Q 1 2 3 U H K Z L R V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. J G D N INCHES MIN MAX 0.570 0.620 0.380 0.415 0.160 0.190 0.025 0.038 0.142 0.161 0.095 0.105 0.110 0.161 0.014 0.024 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 ----0.080 STYLE 6: PIN 1. 2. 3. 4. MILLIMETERS MIN MAX 14.48 15.75 9.66 10.53 4.07 4.83 0.64 0.96 3.61 4.09 2.42 2.66 2.80 4.10 0.36 0.61 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 ----2.04 ANODE CATHODE ANODE CATHODE ON Semiconductor and the are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. 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