MBR2030CTLG Switch-mode Dual Schottky Power Rectifier Features and Benefits • • • • • • • • • • www.onsemi.com Highly Stable Oxide Passivated Junction Very Low Forward Voltage Drop (0.4 Max @ 10 A, TC = 150°C) High Junction Temperature High dv/dt Capability Excellent Ability to Withstand Reverse Avalanche Energy Transients Low Power Loss/High Efficiency High Surge Capacity 175°C Operating Junction Temperature 20 A Total (10 A Per Diode Leg) This Device is Pb−Free and is RoHS Compliant* SCHOTTKY BARRIER RECTIFIER 20 AMPERES, 30 VOLTS 1 2, 4 3 MARKING DIAGRAM Applications • Power Supply − Output Rectification • Power Management − ORING • Instrumentation 4 TO−220 CASE 221A STYLE 6 Mechanical Characteristics • • • • • • Case: Epoxy, Molded Epoxy Meets UL 94 V−0 @ 0.125 in Weight: 1.9 Grams (Approximately) Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable Lead Temperature for Soldering Purposes: 260°C Max. for 10 Sec ESD Rating: Human Body Model 3B Machine Model C 1 2 AYWW B2030LG AKA 3 A Y WW B2030L G AKA = Assembly Location = Year = Work Week = Device Code = Pb−Free Package = Diode Polarity ORDERING INFORMATION Device Package Shipping MBR2030CTLG TO−220 (Pb−Free) 50 Units/Rail *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2015 January, 2015 − Rev. 5 1 Publication Order Number: MBR2030CTL/D MBR2030CTLG MAXIMUM RATINGS (Per Leg) Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 30 V Average Rectified Forward Current (TC = 167_C) Per Diode Per Device IF(AV) Non-repetitive Peak Surge Current (Surge applied at rated load conditions halfwave, single phase, 60 Hz) IFSM 150 A Peak Repetitive Forward Current (Square Wave, 20 kHz, TC = 166°C) IFRM 10 A Peak Repetitive Reverse Surge Current (2.0 ms, 1.0 kHz) IRRM 1.0 A TJ *65 to +175 °C Storage Temperature Tstg *65 to +175 °C Voltage Rate of Change (Rated VR) dv/dt 1000 V/ms Rating A 10 20 Operating Junction Temperature (Note 1) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RqJA. THERMAL CHARACTERISTICS (Per Leg) Characteristic Symbol Value Unit Maximum Thermal Resistance, Junction−to−Case (Min. Pad) RqJC 2.0 °C/W Maximum Thermal Resistance, Junction−to−Ambient (Min. Pad) RqJA 60 °C/W ELECTRICAL CHARACTERISTICS (Per Leg) Characteristic Symbol Maximum Instantaneous Forward Voltage (Note 2) (iF = 10 Amps, TJ= 25°C) (iF = 10 Amps, TJ = 150°C) (iF = 20 Amps, TJ = 25°C) (iF = 20 Amps, TJ = 150°C) vF Maximum Instantaneous Reverse Current (Note 2) (Rated dc Voltage, TJ = 25°C) (Rated dc Voltage, TJ = 100°C) (Rated dc Voltage, TJ = 125°C) iR Min Typ Max − − − − 0.45 0.32 0.51 0.41 0.52 0.40 0.58 0.48 − − − 0.11 10 − 5.0 40 75 Unit V mA Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Pulse Test: Pulse Width = 5.0 ms, Duty Cycle ≤ 10%. www.onsemi.com 2 i , INSTANTANEOUS FORWARD CURRENT (AMPS) F 100 TJ = 175°C 10 150°C 100°C 25°C 1.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 100 TJ = 175°C 10 25°C 1.0 0.1 0.0 I , REVERSE CURRENT (mA) R TJ = 150°C TJ = 100°C I TJ = 25°C 5 10 15 20 VR REVERSE VOLTAGE (VOLTS) 25 30 0.5 0.6 0.7 0.8 0.9 1.0 18 dc RqJA = 16° C/W RqJA = 60° C/W (NO HEATSINK) 14 12 SQUARE WAVE dc 8.0 6.0 4.0 2.0 25 50 75 100 125 1.1 20 18 dc 16 14 12 SQUARE WAVE 10 8.0 6.0 4.0 2.0 0 140 145 150 155 160 165 170 175 180 Figure 4. Current Derating, Case Per Leg P , AVERAGE FORWARD POWER DISSIPATION (WATTS) F (AV) , AVERAGE FORWARD CURRENT (AMPS) F (AV) I 0.4 TC, CASE TEMPERATURE (C°) RATED VOLTAGE APPLIED 0 0.3 Figure 2. Maximum Forward Voltage 20 0 0.2 Figure 1. Typical Forward Voltage Figure 3. Typical Reverse Current 10 0.1 vF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS) 10000 4000 2000 1000 400 200 100 40 20 10 4 2 1 0.4 0.2 0.1 0.04 0.02 0.01 0 16 100°C 150°C vF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS) , AVERAGE FORWARD CURRENT (AMPS) 0.1 0.0 F (AV) i , INSTANTANEOUS FORWARD CURRENT (AMPS) F MBR2030CTLG 150 175 TA, AMBIENT TEMPERATURE (°C) 30 28 26 24 22 20 18 16 14 12 10 8 6 4 2 0 TJ = 175°C SQUARE WAVE dc 0 Figure 5. Current Derating, Ambient Per Leg 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 IF(AV), AVERAGE FORWARD CURRENT (AMPS) Figure 6. Forward Power Dissipation www.onsemi.com 3 MBR2030CTLG 10K TJ = 25°C f = 1 MHz C, CAPACITANCE (pF) 5000 3000 2000 1000 500 300 200 100 0.5 1 2 3 5 10 20 VR, REVERSE VOLTAGE (VOLTS) Figure 7. Typical Capacitance www.onsemi.com 4 30 50 MBR2030CTLG PACKAGE DIMENSIONS TO−220 CASE 221A−09 ISSUE AH −T− B SEATING PLANE C F T S 4 DIM A B C D F G H J K L N Q R S T U V Z A Q 1 2 3 U H K Z L R V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. J G D INCHES MIN MAX 0.570 0.620 0.380 0.415 0.160 0.190 0.025 0.038 0.142 0.161 0.095 0.105 0.110 0.161 0.014 0.024 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 ----0.080 MILLIMETERS MIN MAX 14.48 15.75 9.66 10.53 4.07 4.83 0.64 0.96 3.61 4.09 2.42 2.66 2.80 4.10 0.36 0.61 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 ----2.04 N STYLE 6: PIN 1. 2. 3. 4. ANODE CATHODE ANODE CATHODE ON Semiconductor and the are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. 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