2N6504 D

2N6504 Series
Preferred Device
Silicon Controlled Rectifiers
Reverse Blocking Thyristors
Designed primarily for half‐wave ac control applications, such as
motor controls, heating controls and power supply crowbar circuits.
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Features
•Glass Passivated Junctions with Center Gate Fire for Greater
SCRs
25 AMPERES RMS
50 thru 800 VOLTS
Parameter Uniformity and Stability
•Small, Rugged, Thermowatt Constructed for Low Thermal
Resistance, High Heat Dissipation and Durability
•Blocking Voltage to 800 Volts
•300 A Surge Current Capability
•Pb-Free Packages are Available*
G
A
K
MARKING
DIAGRAM
4
TO-220AB
CASE 221A
STYLE 3
2N650xG
AYWW
1
2
3
x
A
Y
WW
G
= 4, 5, 7, 8 or 9
= Assembly Location
= Year
= Work Week
= Pb-Free Device
PIN ASSIGNMENT
1
Cathode
2
Anode
3
Gate
4
Anode
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
*For additional information on our Pb-Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2008
April, 2006 - Rev. 8
1
Publication Order Number:
2N6504/D
2N6504 Series
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Symbol
Rating
Value
Unit
*Peak Repetitive Off-State Voltage (Note 1)
(Gate Open, Sine Wave 50 to 60 Hz, TJ = 25 to 125°C)
2N6504
2N6505
2N6507
2N6508
2N6509
VDRM,
VRRM
V
On‐State Current RMS (180° Conduction Angles; TC = 85°C)
IT(RMS)
25
A
Average On‐State Current (180° Conduction Angles; TC = 85°C)
IT(AV)
16
A
Peak Non‐repetitive Surge Current (1/2 Cycle, Sine Wave 60 Hz, TJ = 100°C)
ITSM
250
A
Forward Peak Gate Power (Pulse Width ≤ 1.0 ms, TC = 85°C)
PGM
20
W
PG(AV)
0.5
W
50
100
400
600
800
Forward Average Gate Power (t = 8.3 ms, TC = 85°C)
Forward Peak Gate Current (Pulse Width ≤ 1.0 ms, TC = 85°C)
IGM
2.0
A
Operating Junction Temperature Range
TJ
-40 to +125
°C
Storage Temperature Range
Tstg
-40 to +150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate
voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current
source such that the voltage ratings of the devices are exceeded.
THERMAL CHARACTERISTICS
Characteristic
Symbol
*Thermal Resistance, Junction-to-Case
*Maximum Lead Temperature for Soldering Purposes 1/8 in from Case for 10 Seconds
Max
Unit
RqJC
1.5
°C/W
TL
260
°C
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
-
-
10
2.0
mA
mA
VTM
-
-
1.8
V
IGT
-
9.0
-
30
75
mA
*Gate Trigger Voltage (Continuous dc) (VAK = 12 Vdc, RL = 100 W, TC = -40°C)
VGT
-
1.0
1.5
V
Gate Non‐Trigger Voltage (VAK = 12 Vdc, RL = 100 W, TJ = 125°C)
VGD
0.2
-
-
V
*Holding Current
TC = 25°C
(VAK = 12 Vdc, Initiating Current = 200 mA, Gate Open) TC = -40°C
IH
-
18
-
40
80
mA
*Turn‐On Time (ITM = 25 A, IGT = 50 mAdc)
tgt
-
1.5
2.0
ms
Turn‐Off Time (VDRM = rated voltage)
(ITM = 25 A, IR = 25 A)
(ITM = 25 A, IR = 25 A, TJ = 125°C)
tq
-
15
35
-
-
50
-
OFF CHARACTERISTICS
*Peak Repetitive Forward or Reverse Blocking Current
(VAK = Rated VDRM or VRRM, Gate Open)
TJ = 25°C
TJ = 125°C
IDRM,
IRRM
ON CHARACTERISTICS
*Forward On-State Voltage (Note 2) (ITM = 50 A)
*Gate Trigger Current (Continuous dc)
(VAK = 12 Vdc, RL = 100 W)
TC = 25°C
TC = -40°C
ms
DYNAMIC CHARACTERISTICS
Critical Rate of Rise of Off‐State Voltage (Gate Open, Rated VDRM, Exponential Waveform)
*Indicates JEDEC Registered Data.
2. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
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2
dv/dt
V/ms
2N6504 Series
Voltage Current Characteristic of SCR
+ Current
Symbol
Parameter
VDRM
Peak Repetitive Off State Forward Voltage
IDRM
Peak Forward Blocking Current
VRRM
Peak Repetitive Off State Reverse Voltage
IRRM
Peak Reverse Blocking Current
VTM
Peak On State Voltage
IH
Holding Current
Anode +
VTM
on state
IH
IRRM at VRRM
Reverse Blocking Region
(off state)
Reverse Avalanche Region
+ Voltage
IDRM at VDRM
Forward Blocking Region
(off state)
13
0
32
P(AV) , AVERAGE POWER (WATTS)
TC , MAXIMUM CASE TEMPERATURE ( °C)
Anode -
α
12
0
α = CONDUCTION ANGLE
110
10
0
α = 30°
90
60°
90°
180°
dc
80
α
α = CONDUCTION ANGLE 60°
α = 30°
24
180°
90°
dc
16
TJ = 125°C
8.0
0
0
4.0
8.0
12
16
IT(AV), ON‐STATE FORWARD CURRENT (AMPS)
20
0
Figure 1. Average Current Derating
4.0
8.0
12
16
IT(AV), AVERAGE ON‐STATE FORWARD CURRENT (AMPS)
20
Figure 2. Maximum On-State Power Dissipation
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3
2N6504 Series
100
70
50
30
125°C
25°C
10
7.0
5.0
3.0
2.0
300
I TSM , PEAK SURGE CURRENT (AMP)
iF , INSTANTANEOUS FORWARD CURRENT (AMPS)
20
1.0
0.7
0.5
0.3
0.2
0.1
0
0.4
0.8
1.2
1.6
2.0
vF, INSTANTANEOUS VOLTAGE (VOLTS)
2.4
1 CYCLE
275
250
225
TC = 85°C
f = 60 Hz
200
175
1.0
2.8
2.0
3.0
4.0
6.0
8.0
10
NUMBER OF CYCLES
Figure 3. Typical On-State Characteristics
r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED)
SURGE IS PRECEDED AND
FOLLOWED BY RATED CURRENT
Figure 4. Maximum Non-Repetitive Surge Current
1.0
0.7
0.5
0.3
0.2
ZqJC(t) = RqJC • r(t)
0.1
0.07
0.05
0.03
0.02
0.01
0.1
0.2 0.3
0.5
1.0
2.0 3.0
5.0
10
50
20 30
t, TIME (ms)
100
Figure 5. Thermal Response
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4
200 300
500
1.0 k
2.0 k 3.0 k 5.0 k
10 k
2N6504 Series
TYPICAL TRIGGER CHARACTERISTICS
VGT, GATE TRIGGER VOLTAGE (VOLTS)
1.0
10
1
-40 -25
-10
5
20
35
50 65
80
TJ, JUNCTION TEMPERATURE (°C)
95
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
-40 -25 -10
110 125
5
20
35
65
80
95
Figure 7. Typical Gate Trigger Voltage
versus Junction Temperature
100
10
1
-40 -25 -10
50
TJ, JUNCTION TEMPERATURE (°C)
Figure 6. Typical Gate Trigger Current
versus Junction Temperature
IH , HOLDING CURRENT (mA)
I GT, GATE TRIGGER CURRENT (mA)
100
5
20
35
50
65
80
95
TJ, JUNCTION TEMPERATURE (°C)
Figure 8. Typical Holding Current
versus Junction Temperature
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5
110 125
110 125
2N6504 Series
ORDERING INFORMATION
Device
Package
2N6504
TO-220AB
2N6504G
TO-220AB
(Pb-Free)
2N6505
TO-220AB
2N6505G
TO-220AB
(Pb-Free)
2N6505T
TO-220AB
2N6505TG
TO-220AB
(Pb-Free)
2N6507
TO-220AB
2N6507G
TO-220AB
(Pb-Free)
2N6507T
TO-220AB
2N6507TG
TO-220AB
(Pb-Free)
2N6508
TO-220AB
2N6508G
TO-220AB
(Pb-Free)
2N6508TG
TO-220AB
(Pb-Free)
2N6509
TO-220AB
2N6509G
TO-220AB
(Pb-Free)
2N6509T
TO-220AB
2N6509TG
TO-220AB
(Pb-Free)
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6
Shipping
500 Units / Box
50 Units / Rail
500 Units / Box
50 Units / Rail
500 Units / Box
50 Units / Rail
500 Units / Box
50 Units / Rail
2N6504 Series
PACKAGE DIMENSIONS
TO-220AB
CASE 221A-07
ISSUE AA
-TB
F
T
SEATING
PLANE
C
S
4
Q
A
U
1 2 3
H
K
Z
R
L
V
J
G
D
N
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
T
U
V
Z
INCHES
MIN
MAX
0.570
0.620
0.380
0.405
0.160
0.190
0.025
0.035
0.142
0.147
0.095
0.105
0.110
0.155
0.014
0.022
0.500
0.562
0.045
0.060
0.190
0.210
0.100
0.120
0.080
0.110
0.045
0.055
0.235
0.255
0.000
0.050
0.045
----0.080
STYLE 3:
PIN 1.
2.
3.
4.
MILLIMETERS
MIN
MAX
14.48
15.75
9.66
10.28
4.07
4.82
0.64
0.88
3.61
3.73
2.42
2.66
2.80
3.93
0.36
0.55
12.70
14.27
1.15
1.52
4.83
5.33
2.54
3.04
2.04
2.79
1.15
1.39
5.97
6.47
0.00
1.27
1.15
----2.04
CATHODE
ANODE
GATE
ANODE
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
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For additional information, please contact your local
Sales Representative
2N6504/D
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