BDX53B D

BDX53B, BDX53C (NPN),
BDX54B, BDX54C (PNP)
Plastic Medium-Power
Complementary Silicon
Transistors
These devices are designed for general−purpose amplifier and
low−speed switching applications.
Features
• High DC Current Gain −
hFE = 2500 (Typ) @ IC = 4.0 Adc
• Collector Emitter Sustaining Voltage − @ 100 mAdc
•
•
•
VCEO(sus) = 80 Vdc (Min) − BDX53B, 54B
VCEO(sus) = 100 Vdc (Min) − BDX53C, 54C
Low Collector−Emitter Saturation Voltage −
VCE(sat) = 2.0 Vdc (Max) @ IC = 3.0 Adc
VCE(sat) = 4.0 Vdc (Max) @ IC = 5.0 Adc
Monolithic Construction with Built−In Base−Emitter Shunt Resistors
These Devices are Pb−Free and are RoHS Compliant*
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DARLINGTON
8 AMPERE
COMPLEMENTARY SILICON
POWER TRANSISTORS
80−100 VOLTS, 65 WATTS
4
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MAXIMUM RATINGS
Rating
Symbol
Collector−Emitter Voltage
BDX53B, BDX54B
BDX53C, BDX54C
VCEO
Collector−Base Voltage
BDX53B, BDX54B
BDX53C, BDX54C
VCB
Emitter−Base Voltage
VEB
5.0
Vdc
IC
8.0
12
Adc
Base Current
IB
0.2
Adc
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
65
0.48
W
W/°C
TJ, Tstg
−65 to +150
°C
Collector Current
− Continuous
− Peak
Operating and Storage Junction
Temperature Range
Value
1
Unit
Vdc
Vdc
80
100
MARKING DIAGRAM
& PIN ASSIGNMENT
4
Collector
BDX5xyG
AY WW
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction−to−Ambient
RqJA
70
°C/W
Thermal Resistance, Junction−to−Case
RqJC
1.92
°C/W
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2014
November, 2014 − Rev. 15
1
3
TO−220
CASE 221A
STYLE 1
80
100
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
2
1
Base
BDX5xy =
A
Y
WW
G
=
=
=
=
3
Emitter
2
Collector
Device Code
x = 3 or 4
y = B or C
Assembly Location
Year
Work Week
Pb−Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
Publication Order Number:
BDX53B/D
PD, POWER DISSIPATION (WATTS)
BDX53B, BDX53C (NPN), BDX54B, BDX54C (PNP)
TA
4.0
TC
80
3.0
60
TC
2.0
40
1.0
20
TA
0
0
20
40
60
80
100
120
140
160
T, TEMPERATURE (°C)
Figure 1. Power Derating
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Symbol
Min
Max
80
100
−
−
−
−
0.5
0.5
−
−
0.2
0.2
hFE
750
−
−
Collector−Emitter Saturation Voltage
(IC = 3.0 Adc, IB = 12 mAdc)
VCE(sat)
−
−
2.0
4.0
Vdc
Base−Emitter Saturation Voltage
(IC = 3.0 Adc, IC = 12 mA)
VBE(sat)
−
2.5
Vdc
hfe
4.0
−
−
−
−
300
200
Characteristic
Unit
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (Note 1)
(IC = 100 mAdc, IB = 0)
VCEO(sus)
BDX53B, BDX54B
BDX53C, BDX54C
Collector Cutoff Current
(VCE = 40 Vdc, IB = 0)
(VCE = 50 Vdc, IB = 0)
BDX53B, BDX54B
BDX53C, BDX54C
Collector Cutoff Current
(VCB = 80 Vdc, IE = 0)
(VCB = 100 Vdc, IE = 0)
BDX53B, BDX54B
BDX53C, BDX54C
Vdc
ICEO
mAdc
ICBO
mAdc
ON CHARACTERISTICS (Note 1)
DC Current Gain
(IC = 3.0 Adc, VCE = 3.0 Vdc)
DYNAMIC CHARACTERISTICS
Small−Signal Current Gain
(IC = 3.0 Adc, VCE = 4.0 Vdc, f = 1.0 MHz)
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 0.1 MHz)
Cob
BDX53B, 53C
BDX54B, 54C
pF
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
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2
BDX53B, BDX53C (NPN), BDX54B, BDX54C (PNP)
5.0
VCC
- 30 V
RB AND RC VARIED TO OBTAIN DESIRED CURRENT LEVELS
D1 MUST BE FAST RECOVERY TYPES, e.g.:
1N5825 USED ABOVE IB [ 100 mA
MSD6100 USED BELOW IB [ 100 mA
TUT
RB
V2
2.0
SCOPE
t, TIME (s)
μ
RC
APPROX
+ 8.0 V
0
51
V1
D1
[ 8.0 k
[ 120
tf
1.0
0.7
0.5
0.3
tr
0.2
+ 4.0 V
25 ms
-12 V
tr, tf v 10 ns
DUTY CYCLE = 1.0%
ts
3.0
APPROX
for td and tr, D1 is disconnected
and V2 = 0
For NPN test circuit reverse all polarities
0.1
0.07
0.05
0.1
VCC = 30 V
IC/IB = 250
IB1 = IB2
TJ = 25°C
0.2
Figure 2. Switching Time Test Circuit
td @ VBE(off) = 0 V
0.3
0.5 0.7 1.0
2.0 3.0
IC, COLLECTOR CURRENT (AMP)
5.0 7.0 10
r(t) EFFECTIVE TRANSIENT
THERMAL RESISTANCE (NORMALIZED)
Figure 3. Switching Times
1.0
0.7
0.5
D = 0.5
0.3
0.2
0.2
0.1
P(pk)
0.05
0.1
0.07
0.05
RqJC(t) = r(t) RqJC
RqJC = 1.92°C/W
0.02
t1
0.03
0.01
0.02
SINGLE
PULSE
t2
SINGLE PULSE
DUTY CYCLE, D = t1/t2
0.01
0.01
0.02 0.03
0.05
0.1
0.2 0.3
0.5
1.0
2.0 3.0 5.0
10
t, TIME OR PULSE WIDTH (ms)
20
30
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) - TC = P(pk) RqJC(t)
50
100
200 300
500
1000
Figure 4. Thermal Response
IC, COLLECTOR CURRENT (AMP)
20
5.0
2.0
1.0
0.5
0.2
0.1
0.05
0.02
1.0
There are two limitations on the power handling ability of
a transistor average junction temperature and second
breakdown. Safe operating area curves indicate IC −VCE
limits of the transistor that must be observed for reliable
operation, i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 5 is based on TJ(pk) = 150°C; TC is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided
TJ(pk) t 150°C. TJ(pk) may be calculated from the data in
Figure 4. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
100 ms
500 ms
10
5.0 ms
1.0 ms
dc
TJ = 150°C
BONDING WIRE LIMITED
THERMALLY LIMITED @ TC = 25°C
(SINGLE PULSE)
SECOND BREAKDOWN LIMITED
CURVES APPLY BELOW RATED VCEO
BDX53B, BDX54B
BDX53C, BDX54C
20 30
2.0 3.0
5.0 7.0 10
50
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
70 100
Figure 5. Active−Region Safe Operating Area
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3
BDX53B, BDX53C (NPN), BDX54B, BDX54C (PNP)
300
TJ = + 25°C
5000
3000
2000
200
C, CAPACITANCE (pF)
hFE, SMALL-SIGNAL CURRENT GAIN
10,000
1000
500
300
200
TJ = 25°C
VCE = 3.0 V
IC = 3.0 A
100
50
30
20
10
1.0
Cob
100
Cib
70
50
PNP
NPN
2.0
5.0
PNP
NPN
10
20
50 100
f, FREQUENCY (kHz)
200
500
30
0.1
1000
0.2
0.5
1.0 2.0
5.0 10
20
VR, REVERSE VOLTAGE (VOLTS)
Figure 6. Small-Signal Current Gain
PNP
BDX54B, 54C
20,000
20,000
VCE = 4.0 V
VCE = 4.0 V
10,000
hFE, DC CURRENT GAIN
hFE, DC CURRENT GAIN
10,000
3000
2000
100
Figure 7. Capacitance
NPN
BDX53B, 53C
5000
50
TJ = 150°C
25°C
1000
-55°C
5000
TJ = 150°C
3000
2000
25°C
1000
-55°C
500
500
300
200
0.1
300
200
0.1
0.2
0.3
0.5 0.7 1.0
2.0 3.0
IC, COLLECTOR CURRENT (AMP)
5.0 7.0 10
0.2
0.3
0.5 0.7 1.0
2.0 3.0
IC, COLLECTOR CURRENT (AMP)
5.0 7.0
10
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 8. DC Current Gain
3.0
TJ = 25°C
2.6
IC = 2.0 A
4.0 A
6.0 A
2.2
1.8
1.4
1.0
0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
IB, BASE CURRENT (mA)
20
30
3.0
TJ = 25°C
2.6
IC = 2.0 A
6.0 A
2.2
1.8
1.4
1.0
0.3
0.5 0.7 1.0
Figure 9. Collector Saturation Region
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4
4.0 A
2.0 3.0
5.0 7.0
IB, BASE CURRENT (mA)
10
20
30
BDX53B, BDX53C (NPN), BDX54B, BDX54C (PNP)
3.0
3.0
TJ = 25°C
2.5
V, VOLTAGE (VOLTS)
V, VOLTAGE (VOLTS)
TJ = 25°C
2.0
VBE(sat) @ IC/IB = 250
1.5
VBE @ VCE = 4.0 V
1.0
VCE(sat) @ IC/IB = 250
2.5
2.0
1.5
VBE @ VCE = 4.0 V
1.0
VBE(sat) @ IC/IB = 250
VCE(sat) @ IC/IB = 250
0.5
0.1
0.2 0.3
0.5 0.7
1.0
2.0 3.0
5.0 7.0
0.5
10
0.1
0.2 0.3
IC, COLLECTOR CURRENT (AMP)
0.5 0.7
1.0
2.0 3.0
5.0 7.0
10
IC, COLLECTOR CURRENT (AMP)
Figure 10. “On” Voltages
PNP
BDX54B, BDX54C
+5.0
+4.0
θV, TEMPERATURE COEFFICIENT (mV/ °C)
θV, TEMPERATURE COEFFICIENT (mV/ °C)
NPN
BDX53B, BDX53C
*IC/IB v hFE/3
+3.0
25°C to 150°C
+2.0
+1.0
-55°C to 25°C
0
*qVC for VCE(sat)
-1.0
-2.0
25°C to 150°C
-3.0
qVB for VBE
-55 to 150°C
-4.0
-5.0
0.1
0.2 0.3
0.5 0.7 1.0
2.0 3.0
5.0
+5.0
+4.0
25°C to 150°C
+2.0
+1.0
-55°C to 25°C
0
*qVC for VCE(sat)
-1.0
-2.0
25°C to 150°C
-3.0
qVB for VBE
-55 to 150°C
-4.0
-5.0
7.0 10
*IC/IB v hFE/3
+3.0
0.1
0.2 0.3
0.5 0.7 1.0
2.0 3.0
5.0
7.0 10
IC, COLLECTOR CURRENT (AMP)
IC, COLLECTOR CURRENT (AMP)
Figure 11. Temperature Coefficients
104
103
105
REVERSE
FORWARD
IC, COLLECTOR CURRENT (A)
μ
IC, COLLECTOR CURRENT (A)
μ
105
VCE = 30 V
102
TJ = 150°C
101
100
10-1
100°C
25°C
-0.6 -0.4 -0.2
0
+0.2 +0.4 +0.6 +0.8
104
103
VCE = 30 V
102
101
TJ = 150°C
100°C
100
25°C
10-1
+0.6 +0.4 +0.2
+1.0 +1.2 + 1.4
FORWARD
REVERSE
VBE, BASE‐EMITTER VOLTAGE (VOLTS)
0
-0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4
VBE, BASE‐EMITTER VOLTAGE (VOLTS)
Figure 12. Collector Cut−Off Region
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5
BDX53B, BDX53C (NPN), BDX54B, BDX54C (PNP)
NPN
BDX53B
BDX53C
COLLECTOR
PNP
BDX54B
BDX54C
BASE
COLLECTOR
BASE
[ 8.0 k
[ 120
[ 8.0 k
[ 120
EMITTER
EMITTER
Figure 13. Darlington Schematic
ORDERING INFORMATION
Package
Shipping†
BDX53BG
TO−220
(Pb−Free)
50 Units / Rail
BDX53CG
TO−220
(Pb−Free)
50 Units / Rail
BDX54BG
TO−220
(Pb−Free)
50 Units / Rail
BDX54CG
TO−220
(Pb−Free)
50 Units / Rail
Device
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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6
BDX53B, BDX53C (NPN), BDX54B, BDX54C (PNP)
PACKAGE DIMENSIONS
TO−220
CASE 221A−09
ISSUE AH
−T−
B
SEATING
PLANE
C
F
T
S
4
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
T
U
V
Z
A
Q
1 2 3
U
H
K
Z
L
R
V
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
J
G
D
INCHES
MIN
MAX
0.570
0.620
0.380
0.415
0.160
0.190
0.025
0.038
0.142
0.161
0.095
0.105
0.110
0.161
0.014
0.024
0.500
0.562
0.045
0.060
0.190
0.210
0.100
0.120
0.080
0.110
0.045
0.055
0.235
0.255
0.000
0.050
0.045
----0.080
MILLIMETERS
MIN
MAX
14.48
15.75
9.66
10.53
4.07
4.83
0.64
0.96
3.61
4.09
2.42
2.66
2.80
4.10
0.36
0.61
12.70
14.27
1.15
1.52
4.83
5.33
2.54
3.04
2.04
2.79
1.15
1.39
5.97
6.47
0.00
1.27
1.15
----2.04
N
STYLE 1:
PIN 1.
2.
3.
4.
BASE
COLLECTOR
EMITTER
COLLECTOR
ON Semiconductor and the
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specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets
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For additional information, please contact your local
Sales Representative
BDX53B/D
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