BUB323Z D

BUB323Z
NPN Silicon Power
Darlington
High Voltage Autoprotected
D2PAK for Surface Mount
The BUB323Z is a planar, monolithic, high−voltage power
Darlington with a built−in active zener clamping circuit. This device is
specifically designed for unclamped, inductive applications such as
Electronic Ignition, Switching Regulators and Motor Control.
Features
• Integrated High−Voltage Active Clamp
• Tight Clamping Voltage Window (350 V to 450 V) Guaranteed
Over the −40°C to +125°C Temperature Range
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AUTOPROTECTED
DARLINGTON
10 AMPERES
360−450 VOLTS CLAMP
150 WATTS
• Clamping Energy Capability 100% Tested in a Live
•
•
•
•
Ignition Circuit
High DC Current Gain/Low Saturation Voltages
Specified Over Full Temperature Range
Design Guarantees Operation in SOA at All Times
NJV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
360 V
CLAMP
MARKING
DIAGRAM
MAXIMUM RATINGS
Symbol
Value
Unit
Collector−Emitter Sustaining Voltage
Rating
VCEO
350
Vdc
Collector−Emitter Voltage
VEBO
6.0
Vdc
Collector Current − Continuous
− Peak
IC
ICM
10
20
Adc
Base Current
IB
IBM
3.0
6.0
Adc
150
1.0
W
W/_C
TJ, Tstg
−65 to
+175
_C
Symbol
Max
Unit
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
− Continuous
− Peak
Total Power Dissipation
@ TC = 25_C
Derate above 25_C
Operating and Storage Junction
Temperature Range
PD
BUB323ZG
AYWW
D2PAK
CASE 418B
STYLE 1
BUB323Z
A
Y
WW
G
= Specific Device Code
= Assembly Location
= Year
= Work Week
= Pb−Free Package
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction−to−Case
RqJC
1.0
_C/W
Thermal Resistance, Junction−to−Ambient
RqJA
62.5
_C/W
TL
260
_C
Maximum Lead Temperature
for Soldering Purposes,
1/8 in from Case for 5 Seconds
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
© Semiconductor Components Industries, LLC, 2014
September, 2014 − Rev. 2
1
Publication Order Number:
BUB323Z/D
BUB323Z
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Symbol
Min
Typ
Max
Unit
VCLAMP
350
−
450
Vdc
Collector−Emitter Cutoff Current
(VCE = 200 V, IB = 0)
ICEO
−
−
100
mAdc
Emitter−Base Leakage Current
(VEB = 6.0 Vdc, IC = 0)
IEBO
−
−
50
mAdc
−
−
−
−
2.2
2.5
−
−
−
−
−
−
−
−
−
−
1.6
1.8
1.8
2.1
1.7
1.1
1.3
−
−
2.1
2.3
−
−
2.5
150
500
−
−
−
3400
fT
−
−
2.0
MHz
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Cob
−
−
200
pF
Input Capacitance
(VEB = 6.0 V)
Cib
−
−
550
pF
WCLAMP
200
−
−
mJ
tfi
−
625
−
ns
tsi
−
10
30
ms
tc
−
1.7
−
ms
Characteristic
OFF CHARACTERISTICS (Note 1)
Collector−Emitter Clamping Voltage (IC = 7.0 A)
(TC = − 40°C to +125°C)
ON CHARACTERISTICS (Note 1)
Base−Emitter Saturation Voltage
(IC = 8.0 Adc, IB = 100 mAdc)
(IC = 10 Adc, IB = 0.25 Adc)
VBE(sat)
Collector−Emitter Saturation Voltage
(IC = 7.0 Adc, IB = 70 mAdc)
VCE(sat)
(TC = 125°C)
(IC = 8.0 Adc, IB = 0.1 Adc)
(TC = 125°C)
(IC = 10 Adc, IB = 0.25 Adc)
Base−Emitter On Voltage
(IC = 5.0 Adc, VCE = 2.0 Vdc)
(IC = 8.0 Adc, VCE = 2.0 Vdc)
Vdc
Vdc
VBE(on)
(TC = − 40°C to +125°C)
Diode Forward Voltage Drop
(IF = 10 Adc)
VF
DC Current Gain
(IC = 6.5 Adc, VCE = 1.5 Vdc)
(IC = 5.0 Adc, VCE = 4.6 Vdc)
Vdc
hFE
(TC = − 40°C to +125°C)
Vdc
−
DYNAMIC CHARACTERISTICS
Current Gain Bandwidth
(IC = 0.2 Adc, VCE = 10 Vdc, f = 1.0 MHz)
CLAMPING ENERGY (See Notes)
Repetitive Non−Destructive Energy Dissipated at turn−off:
(IC = 7.0 A, L = 8.0 mH, RBE = 100 W) (see Figures 2 and 4)
SWITCHING CHARACTERISTICS: Inductive Load (L = 10 mH)
Fall Time
Storage Time
Cross−over Time
(IC = 6.5 A, IB1 = 45 mA,
VBE(off) = 0, RBE(off) = 0,
VCC = 14 V, VZ = 300 V)
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle = 2.0%.
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2
BUB323Z
IC
MERCURY CONTACTS
WETTED RELAY
INOM = 6.5 A
Output transistor turns on: IC = 40 mA
L INDUCTANCE
(8 mH)
VCE
MONITOR
(VGATE)
IC CURRENT
SOURCE
High Voltage Circuit turns on: IC = 20 mA
RBE = 100 W
Avalanche diode turns on: IC = 100 mA
250 V
IB CURRENT
SOURCE
300 V
340 V
Icer Leakage Current
VBEoff
IB2 SOURCE
VCE
VCLAMP NOMINAL
= 400 V
IC
MONITOR
0.1 W
NON
INDUCTIVE
Figure 1. IC = f(VCE) Curve Shape
Figure 2. Basic Energy Test Circuit
By design, the BU323Z has a built−in avalanche diode and
a special high voltage driving circuit. During an
auto−protect cycle, the transistor is turned on again as soon
as a voltage, determined by the zener threshold and the
network, is reached. This prevents the transistor from going
into a Reverse Bias Operating limit condition. Therefore, the
device will have an extended safe operating area and will
always appear to be in “FBSOA.” Because of the built−in
zener and associated network, the IC = f(VCE) curve exhibits
an unfamiliar shape compared to standard products as
shown in Figure 1.
The bias parameters, VCLAMP, IB1, VBE(off), IB2, IC, and
the inductance, are applied according to the Device Under
Test (DUT) specifications. VCE and IC are monitored by the
test system while making sure the load line remains within
the limits as described in Figure 4.
Note: All BU323Z ignition devices are 100% energy
tested, per the test circuit and criteria described in Figures 2
and 4, to the minimum guaranteed repetitive energy, as
specified in the device parameter section. The device can
sustain this energy on a repetitive basis without degrading
any of the specified electrical characteristics of the devices.
The units under test are kept functional during the complete
test sequence for the test conditions described:
IC(peak) = 7.0 A, ICH = 5.0 A, ICL = 100 mA, IB = 100 mA,
RBE = 100 W, Vgate = 280 V, L = 8.0 mH
10
IC, COLLECTOR CURRENT (AMPS)
300ms
1
1ms
TC = 25°C
10ms
250ms
0.1
0.01
0.001
10
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
CURVES APPLY BELOW
RATED VCEO
100
340V
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 3. Forward Bias Safe Operating Area
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3
1000
BUB323Z
IC
The shaded area represents the amount of energy the device can sustain, under given DC biases (IC/IB/VBE(off)/
RBE), without an external clamp; see the test schematic diagram, Figure 2.
The transistor PASSES the Energy test if, for the inductive
load and ICPEAK/IB/VBE(off) biases, the VCE remains outside
the shaded area and greater than the VGATE minimum limit,
Figure 4a.
ICPEAK
IC HIGH
IC LOW
VCE
(a)
VGATE MIN
IC
ICPEAK
IC HIGH
IC LOW
VCE
(b)
VGATE MIN
IC
ICPEAK
IC HIGH
The transistor FAILS if the VCE is less than the VGATE
(minimum limit) at any point along the VCE/IC curve as
shown on Figures 4b, and 4c. This assures that hot spots and
uncontrolled avalanche are not being generated in the die,
and the transistor is not damaged, thus enabling the sustained
energy level required.
IC LOW
VCE
(c)
VGATE MIN
IC
ICPEAK
IC HIGH
The transistor FAILS if its Collector/Emitter breakdown
voltage is less than the VGATE value, Figure 4d.
IC LOW
VCE
(d)
VGATE MIN
Figure 4. Energy Test Criteria for BU323Z
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4
BUB323Z
10000
10000
hFE, DC CURRENT GAIN
hFE, DC CURRENT GAIN
TYPICAL
TJ = 125°C
1000
-40°C
25°C
100
1000
TYP - 6Σ
TYP + 6Σ
100
VCE = 5 V, TJ = 25°C
VCE = 1.5 V
10
100
1000
IC, COLLECTOR CURRENT (MILLIAMPS)
10
100
10000
5.0
4.5
TJ = 25°C
IC = 3 A
4.0
3.5
5A
3.0
8A
10 A
2.5
2.0
7A
1.5
1.0
0.5
0
1
10
IB, BASE CURRENT (MILLIAMPS)
100
2.4
VBE(on) , BASE-EMITTER VOLTAGE (VOLTS)
VBE, BASE-EMITTER VOLTAGE (VOLTS)
IC/IB = 150
1.8
TJ = 25°C
1.4
125°C
1.0
0.8
0.1
1
IC, COLLECTOR CURRENT (AMPS)
TJ = 125°C
2.0
1.8
1.6
1.4
1.2
1.0
25°C
0.8
0.6
0.4
0.1
1
IC, COLLECTOR CURRENT (AMPS)
10
Figure 8. Collector−Emitter Saturation Voltage
2.0
1.2
IC/IB = 150
2.2
Figure 7. Collector Saturation Region
1.6
100000
Figure 6. DC Current Gain
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 5. DC Current Gain
10000
1000
IC, COLLECTOR CURRENT (MILLIAMPS)
10
2.0
VCE = 2 VOLTS
1.8
1.6
1.4
TJ = 25°C
1.2
1.0
125°C
0.8
0.6
0.1
Figure 9. Base−Emitter Saturation Voltage
1
IC, COLLECTOR CURRENT (AMPS)
Figure 10. Base−Emitter “ON” Voltages
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5
10
BUB323Z
ORDERING INFORMATION
Device
BUB323ZG
Package
Shipping†
D2PAK
50 Units / Rail
(Pb−Free)
BUB323ZT4G
D2PAK
(Pb−Free)
800 Units / Tape & Reel
NJVBUB323ZT4G*
D2PAK
(Pb−Free)
800 Units / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
*NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP
Capable.
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6
BUB323Z
PACKAGE DIMENSIONS
D2PAK 3
CASE 418B−04
ISSUE K
NOTES:
1. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. 418B−01 THRU 418B−03 OBSOLETE,
NEW STANDARD 418B−04.
C
E
V
W
−B−
4
DIM
A
B
C
D
E
F
G
H
J
K
L
M
N
P
R
S
V
A
1
2
S
3
−T−
SEATING
PLANE
K
W
J
G
D 3 PL
0.13 (0.005)
H
M
T B
M
STYLE 1:
PIN 1.
2.
3.
4.
VARIABLE
CONFIGURATION
ZONE
N
R
P
U
L
M
INCHES
MIN
MAX
0.340 0.380
0.380 0.405
0.160 0.190
0.020 0.035
0.045 0.055
0.310 0.350
0.100 BSC
0.080
0.110
0.018 0.025
0.090
0.110
0.052 0.072
0.280 0.320
0.197 REF
0.079 REF
0.039 REF
0.575 0.625
0.045 0.055
L
M
L
M
F
F
F
VIEW W−W
1
VIEW W−W
2
VIEW W−W
3
SOLDERING FOOTPRINT*
10.49
8.38
16.155
2X
3.504
2X
1.016
5.080
PITCH
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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7
BASE
COLLECTOR
EMITTER
COLLECTOR
MILLIMETERS
MIN
MAX
8.64
9.65
9.65 10.29
4.06
4.83
0.51
0.89
1.14
1.40
7.87
8.89
2.54 BSC
2.03
2.79
0.46
0.64
2.29
2.79
1.32
1.83
7.11
8.13
5.00 REF
2.00 REF
0.99 REF
14.60 15.88
1.14
1.40
BUB323Z
ON Semiconductor and the
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries.
SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed
at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation
or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets
and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each
customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended,
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For additional information, please contact your local
Sales Representative
BUB323Z/D
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