MJE5740 D

MJE5740, MJE5742
NPN Silicon Power
Darlington Transistors
The MJE5740 and MJE5742 Darlington transistors are designed for
high−voltage power switching in inductive circuits.
Features
www.onsemi.com
• These Devices are Pb−Free and are RoHS Compliant*
POWER DARLINGTON
TRANSISTORS
8 AMPERES
300−400 VOLTS
80 WATTS
Applications
•
•
•
•
•
Small Engine Ignition
Switching Regulators
Inverters
Solenoid and Relay Drivers
Motor Controls
MAXIMUM RATINGS
Rating
Symbol
Collector−Emitter Voltage
MJE5740
MJE5742
Collector−Emitter Voltage
Unit
Vdc
300
400
VCEV
MJE5740
MJE5742
Emitter−Base Voltage
Collector Current
Value
VCEO(sus)
600
800
8
Vdc
IC
Adc
ICM
8
16
− Continuous
− Peak (Note 1)
IB
IBM
2.5
5
Adc
Total Device Dissipation @ TA = 25_C
Derate above 25°C
PD
2
0.016
W
W/_C
Total Device Dissipation @ TC = 25_C
Derate above 25°C
PD
100
0.8
W
W/_C
TJ, Tstg
−65 to +150
_C
Operating and Storage Junction
Temperature Range
≈ 50
COLLECTOR 2,4
VEB
− Continuous
− Peak (Note 1)
Base Current
≈ 100
Vdc
BASE
1
EMITTER 3
MARKING
DIAGRAM
MJE574xG
THERMAL CHARACTERISTICS
Characteristics
Symbol
Max
Unit
Thermal Resistance, Junction−to−Case
RqJC
1.25
_C/W
Thermal Resistance, Junction−to−Ambient
RqJA
62.5
_C/W
Maximum Lead Temperature for Soldering
Purposes 1/8″ from Case for 5 Seconds
TL
275
_C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤ 10%.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2015
January, 2015 − Rev. 12
1
1
2
TO−220AB
CASE 221A−09
STYLE 1
AY WW
3
MJE574x =
G
A
Y
WW
=
=
=
=
Device Code
x = 0 or 2
Pb−Free Package
Assembly Location
Year
Work Week
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
Publication Order Number:
MJE5740/D
MJE5740, MJE5742
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎ
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
VCEO(sus)
300
400
−
−
−
−
Vdc
Collector Cutoff Current (VCEV = Rated Value, VBE(off) = 1.5 Vdc)
(VCEV = Rated Value, VBE(off) = 1.5 Vdc, TC = 100_C)
ICEV
−
−
−
−
1
5
mAdc
Emitter Cutoff Current (VEB = 8 Vdc, IC = 0)
IEBO
−
−
75
mAdc
OFF CHARACTERISTICS (Note 2)
Collector−Emitter Sustaining Voltage
(IC = 50 mA, IB = 0)
MJE5740
MJE5742
SECOND BREAKDOWN
Second Breakdown Collector Current with Base Forward Biased
Clamped Inductive SOA with Base Reverse Biased
IS/b
See Figure 6
RBSOA
See Figure 7
ON CHARACTERISTICS (Note 2)
DC Current Gain (IC = 0.5 Adc, VCE = 5 Vdc)
(IC = 4 Adc, VCE = 5 Vdc)
hFE
50
200
100
400
−
−
−
Collector−Emitter Saturation Voltage (IC = 4 Adc, IB = 0.2 Adc)
Collector−Emitter Saturation Voltage (IC = 8 Adc, IB = 0.4 Adc)
Collector−Emitter Saturation Voltage (IC = 4 Adc, IB = 0.2 Adc, TC = 100_C)
VCE(sat)
−
−
−
−
−
−
2
3
2.2
Vdc
Base−Emitter Saturation Voltage (IC = 4 Adc, IB = 0.2 Adc)
Base−Emitter Saturation Voltage (IC = 8 Adc, IB = 0.4 Adc)
Base−Emitter Saturation Voltage (IC = 4 Adc, IB = 0.2 Adc, TC = 100_C)
VBE(sat)
−
−
−
−
−
−
2.5
3.5
2.4
Vdc
Vf
−
−
2.5
Vdc
td
−
0.04
−
ms
tr
−
0.5
−
ms
ts
−
8
−
ms
tf
−
2
−
ms
tsv
−
4
−
ms
tc
−
2
−
ms
Diode Forward Voltage (Note 3) (IF = 5 Adc)
SWITCHING CHARACTERISTICS
Typical Resistive Load (Table 1)
Delay Time
(VCC = 250 Vdc, IC(pk) = 6 A
IB1 = IB2 = 0.25 A, tp = 25 ms,
Duty Cycle v 1%)
Rise Time
Storage Time
Fall Time
Inductive Load, Clamped (Table 1)
Voltage Storage Time
Crossover Time
(IC(pk) = 6 A, VCE(pk) = 250 Vdc
IB1 = 0.06 A, VBE(off) = 5 Vdc)
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Pulse Test: Pulse Width 300 ms, Duty Cycle = 2%.
3. The internal Collector−to−Emitter diode can eliminate the need for an external diode to clamp inductive loads. Tests have shown that the
Forward Recovery Voltage (Vf) of this diode is comparable to that of typical fast recovery rectifiers.
ORDERING INFORMATION
Device
Package
MJE5740G
TO−220
(Pb−Free)
MJE5742G
TO−220
(Pb−Free)
www.onsemi.com
2
Shipping
50 Units / Rail
MJE5740, MJE5742
TYPICAL CHARACTERISTICS
POWER DERATING FACTOR (%)
100
IC(pk)
SECOND BREAKDOWN DERATING
80
VCE(pk)
90% VCE(pk)
IC
tsv
90% IC
trv
tfi
tti
60
tc
THERMAL DERATING
VCE
40
10% VCE(pk)
IB
90% IB1
10%
IC(pk)
2% IC
20
0
0
20
40
60
80
100
120
TC, CASE TEMPERATURE (°C)
140
160
TIME
Figure 1. Power Derating
Figure 2. Inductive Switching Measurements
2.4
150°C
1000
VCE = 5 V
+25°C
-55°C
100
10
0.1
2
1
IC, COLLECTOR CURRENT (AMPS)
5
2.2
hFE = 20
2
1.8
-55°C
1.6
1.4
+25°C
1.2
+150°C
1
0.8
0.6
0.4
10
0.2
Figure 3. DC Current Gain
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
hFE , DC CURRENT GAIN
VBE, BASE-EMITTER VOLTAGE (VOLTS)
2000
0.5
1
2
5
IC, COLLECTOR CURRENT (AMPS)
Figure 4. Base−Emitter Voltage
1.8
1.6
hFE = 20
1.4
1.2
1
-55°C
0.8
+25°C
0.6
+150°C
0.4
0.2
0.1
0.2
0.5
1
2
5
IC, COLLECTOR CURRENT (AMPS)
Figure 5. Collector−Emitter Saturation Voltage
www.onsemi.com
3
10
10
MJE5740, MJE5742
Table 1. Test Conditions for Dynamic Performance
RESISTIVE
SWITCHING
REVERSE BIAS SAFE OPERATING AREA AND INDUCTIVE SWITCHING
+5 V
TEST CIRCUITS
0.001 mF
PW
DUTY CYCLE ≤ 10%
tr, tf ≤ 10 ns
1
k
68
+VCC
MJE21
0
33 1N493
3
2N222
2
L
47
1/2
W
COIL DATA:
FERROXCUBE CORE #6656
FULL BOBBIN (~16 TURNS) #16
100
RC
Vclamp
5.1
k
51
IB
VCE
TEST WAVEFORMS
IC(pk)
t
t1
VCE
tf
-4 V
- VBE(off)
VCC = 30 V
VCE(pk) = 250 Vdc
IC(pk) = 6 A
TIM­
E
t
t2 ≈
Lcoil (IC
pk)
VCC
Lcoil (IC
pk)
Vclamp
t2
www.onsemi.com
4
VCC = 250 V
D1 = 1N5820 OR EQUIV.
+10 V
t1 ADJUSTED TO
OBTAIN IC
t1 ≈
VCEOR
Vclamp
D
1
MJE20
0
GAP FOR 200 mH/20 A
Lcoil = 200 mH
tf
CLAMPED
SCOPE
RB
*SELECTED FOR ≥ 1 kV
OUTPUT WAVEFORMS
IC
TUT
T.U.T.
1
k 2N2905
NOTE:
PW and VCC Adjusted for Desired IC
RB Adjusted for Desired IB1
MR826
*
IC
RB
1
+5 Vk
1N493
3
0.02 mF 270
CIRCUIT
VALUES
VCC
33
1N493
3
TEST EQUIPMENT
SCOPE-TEKTRONICS
475 OR EQUIVALENT
25 ms
0
- 9.2 V
tr, tf < 10 ns
DUTY CYCLE = 1%
RB AND RC ADJUSTED
FOR DESIRED IB AND IC
MJE5740, MJE5742
SAFE OPERATING AREA INFORMATION
FORWARD BIAS
REVERSE BIAS
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC − VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 6 is based on TC = 25_C; TJ(pk) is
variable depending on power level. Second breakdown
pulse limits are valid for duty cycles to 10% but must be
derated when TC ≥ 25_C. Second breakdown limitations do
not derate the same as thermal limitations. Allowable
current at the voltages shown on Figure 6 may be found at
any case temperature by using the appropriate curve on
Figure 1.
For inductive loads, high voltage and high current must be
sustained simultaneously during turn−off, in most cases,
with the base to emitter junction reverse biased. Under these
conditions the collector voltage must be held to a safe level
at or below a specific value of collector current. This can be
accomplished by several means such as active clamping, RC
snubbing, load line shaping, etc. The safe level for these
devices is specified as Reverse Bias Safe Operating Area
and represents the voltage−current condition allowable
during reverse biased turnoff. This rating is verified under
clamped conditions so that the device is never subjected to
an avalanche mode. Figure 7 gives the complete RBSOA
characteristics.
16
16
10
8
IC, COLLECTOR CURRENT (AMPS)
IC, COLLECTOR CURRENT (AMPS)
The Safe Operating Area figures shown in Figures 6 and 7 are specified ratings for these devices under the test conditions shown.
100 ms
3
10 ms
5ms
1
0.5
0.3
BONDING WIRE LIMIT
1ms
dc
THERMAL LIMIT
(SINGLE PULSE)
0.1
SECOND BREAKDOWN LIMIT
MJE5742
0.05 CURVES APPLY BELOW RATED VCEO MJE5740
0.02
14
12
10
8
VBE(off) ≤ 5 V
TJ = 100°C
6
4
MJE5742
MJE5740
2
0
5
100
10
20
50
200
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
0
400
Figure 6. Forward Bias Safe Operating Area
100
200
300
400
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 7. Reverse Bias Safe Operating Area
RESISTIVE SWITCHING PERFORMANCE
10
tr
7
ts
5
0.3
0.2
t, TIME (s)
μ
t, TIME (s)
μ
1
0.7
0.5
VCC = 250 V
IB1 = IB2
IC/IB = 20
td
0.1
3
2
1
0.07
0.05
0.7
0.5
0.03
0.02
0.2
0.3
0.2
0.2 0.3
0.3
0.5 0.7
1
2
3
5
7
10
VCC = 250 V
IB1 = IB2
IC/IB = 20
tf
0.5 0.7
1
2
3
5
IC, COLLECTOR CURRENT (AMPS)
IC, COLLECTOR CURRENT (AMPS)
Figure 8. Turn−On Time
Figure 9. Turn−Off Time
www.onsemi.com
5
7
10
500
MJE5740, MJE5742
PACKAGE DIMENSIONS
TO−220
CASE 221A−09
ISSUE AH
−T−
B
SEATING
PLANE
C
F
T
S
4
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
T
U
V
Z
A
Q
1 2 3
U
H
K
Z
L
R
V
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
J
G
D
N
INCHES
MIN
MAX
0.570
0.620
0.380
0.415
0.160
0.190
0.025
0.038
0.142
0.161
0.095
0.105
0.110
0.161
0.014
0.024
0.500
0.562
0.045
0.060
0.190
0.210
0.100
0.120
0.080
0.110
0.045
0.055
0.235
0.255
0.000
0.050
0.045
----0.080
STYLE 1:
PIN 1.
2.
3.
4.
MILLIMETERS
MIN
MAX
14.48
15.75
9.66
10.53
4.07
4.83
0.64
0.96
3.61
4.09
2.42
2.66
2.80
4.10
0.36
0.61
12.70
14.27
1.15
1.52
4.83
5.33
2.54
3.04
2.04
2.79
1.15
1.39
5.97
6.47
0.00
1.27
1.15
----2.04
BASE
COLLECTOR
EMITTER
COLLECTOR
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: [email protected]
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5817−1050
www.onsemi.com
6
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
MJE5740/D