Datasheet

UNISONIC TECHNOLOGIES CO., LTD
MJE13003-E
NPN EPITAXIAL SILICON TRANSISTOR
HIGH VOLTAGE
FAST-SWITCHING NPN
POWER TRANSISTOR
„
DESCRIPTION
The UTC MJE13003-E designed for use in high–volatge,
high speed,power switching in inductive circuit, It is particularly
suited for 115 and 220V switchmode applications such as
switching regulator’s,inverters, DC-DC converter, Motor
control, Solenoid/Relay drivers and deflection circuits.
„
FEATURES
*Collector-Emitter Sustaining Voltage:
VCEO (sus)=300V.
*Collector-Emitter Saturation Voltage:
VCE(sat)=1.0V(Max.) @IC=1.0A, IB =0.25A
*Switch Time- tf =0.7μs(Max.) @Ic=1.0A.
„
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
MJE13003L-E-x-T6S-K
MJE13003G-E-x-T6S-K
MJE13003L-E-x-T92-B
MJE13003G-E-x-T92-B
MJE13003L-E-x-T92-K
MJE13003G-E-x-T92-K
MJE13003L-E-x-T92-R
MJE13003G-E-x-T92-R
www.unisonic.com.tw
Copyright © 2013 Unisonic Technologies Co., Ltd
Package
TO-126S
TO-92
TO-92
TO-92
Pin Assignment
1
2
3
B
C
E
B
C
E
B
C
E
B
C
E
Packing
Bulk
Tape Box
Bulk
Tape Reel
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NPN EPITAXIAL SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter Base Voltage
Continuous
Collector Current
Peak (1)
Continuous
Base Current
Peak (1)
Continuous
Emitter Current
Peak (1)
TO-92
TO-126S
TO-92
Derate
above 25°C TO-126S
TO-92
TC=25°C
TO-126S
TO-92
Derate
above 25°C TO-126S
TA=25°C
Total Power Dissipation
Junction Temperature
Storage Temperature
„
SYMBOL
VCEO(SUS)
VCEV
VEBO
IC
ICM
IB
IBM
IE
IEM
PD
TJ
TSTG
RATINGS
400
700
9
1.5
3
0.75
1.5
2.25
4.5
1.0
1.4
8
11.2
5
40
40
320
150
-65 to +150
UNIT
V
V
V
A
A
A
Watts
MW/°C
Watts
MW/°C
°C
°C
THERMAL CHARACTERISTICS
PARAMETER
SYMBOL
RATINGS
UNIT
TO-92
25
Junction to Case
θJC
°C/W
TO-126S
3.12
TO-92
122
Junction to Ambient
θJA
°C/W
TO-126S
89
Maximum Load Temperature for Soldering Purposes:
TL
275
°C
1/8” from Case for 5 Seconds
Note: 1. Pulse Test : Pulse Width=5ms,Duty Cycle≤10%
2. Designer 's Data for “Worst Case” Conditions – The Designer 's Data Sheet permits the design of most
circuits entirely from the information presented. SOA Limit curves – representing boundaries on device
characteristics – are given to facilitate “Worst case” design.
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NPN EPITAXIAL SILICON TRANSISTOR
ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS (1)
Collector-Emitter Sustaining Voltage
SYMBOL
VCEO(SUS)
Collector Cutoff Current
ICEV
TEST CONDITIONS
MIN TYP MAX UNIT
IC=10 mA , IB=0
VCEV=Rated Value, VBE(off)=1.5 V
VCEV=Rated Value,
VBE(off)=1.5V,Tc=100°C
400
1
5
SECOND BREAKDOWN
hFE1
hFE2
hFE3
DC Current Gain
Collector-Emitter Saturation Voltage
VCE(SAT)
Base-Emitter Saturation Voltage
V BE(SAT)
DYNAMIC CHARACTERISTICS
Current-Gain-Bandwidth Product
fT
Output Capacitance
Cob
SWITCHING CHARACTERISTICS (TABLE 1)
Delay Time
td
Rise Time
tr
Storage Time
ts
Fall Time
tf
INDUCTIVE LOAD, CLAMPED (TABLE 1, FIGURE 7)
Storage Time
tsv
Crossover Time
tc
Fall Time
tfi
„
IC=0.5 A, VCE=2 V
IC=1 A, VCE=2 V
IC=200mA, VCE=10V
IC=0.5A, IB=0.1A
IC=1A, IB=0.25A
IC=1.5A, IB=0.5A
IC=0.5A, IB=0.1A
IC=1A, IB=0.25 A
8
5
9
IC=100mA, VCE=10 V, f=1MHz
VCB=10V, IE=0, f=0.1MHz
4
40
25
40
0.5
2.5
3
1
1.2
10
21
V
V
MHz
pF
VCC=125V, IC=1A,
IB1=IB2=0.2A, tP=25μs,
Duty Cycle≤1%
0.05
0.5
2
0.4
0.1
1
4
0.7
μs
μs
μs
μs
IC=1A,Vclamp=300V,
IB1=0.2A,VBE(off)=5V,TC=100°C
1.7
4
0.29 0.75
0.15
μs
μs
μs
CLASSIFICATION OF hFE1
RANK
RANGE
A
8 ~ 16
B
15 ~ 21
C
20 ~ 26
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D
25 ~ 31
E
30 ~ 36
F
35 ~ 40
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APPLICATION INFORMATION
„
Table 1.Test Conditions for Dynamic Performance
Reverse Bias Safe Operating Area and Inductive Switching
+5V
VCC
33
1N4933
MJE210
L
0.001µF
33
Test Circuits
pw 5V
DUTY CYCLE? 10%
tr,tf? 10ns
68
0.02µF
NOTE
PW and Vcc Adjusted for Desired Ic
RB Adjusted for Desired IB1
+125V
TUT
RB
IB
5.1K
D1
VCE
1K
T.U.T.
SCOPE
*SELECTED FOR? 1KV
51
-4.0V
2N2905
270
47
1/2W 100
MJE200
-VBE(off)
VCC=125V
RC=125Ω
D1=1N5820 or
Equiv.
RB=47Ω
Coil Data :
GAP for 30 mH/2 A
VCC=20V
Ferroxcube core #6656
Lcoil=50mH
Vclamp=300V
Full Bobbin ( ~ 200 Turns) #20
Output Waveforms
Circuit
Values
Rc
Vclamp
IC
RB
1K
+5V
1N4933
MR826*
1N4933
2N2222
1K
Resistive
Switching
Test Waveforms
OUTPUT WAVEFORMS
IC
IC(pk)
t1
VCE
+10.3V
tf CLAMPED
t1 Adjusted to
Obtain Ic
t
tf
VCE or
Vclamp
TIME
t
t2
t1=
Lcoil(Icpk)
Vcc
t2=
Lcoil(Icpk)
Vclamp
25μS
0
Test Equipment
Scope-Tektronics
475 or Equivalent
-8.5V
tr,tf<10ns
Duty Cycly=1.0%
RB and Rc adjusted
for desired IB and Ic
Table 2. Typical Inductive Switching Performance
IC
(AMP)
TC
(°C)
TSV
(μs)
TRV
(μs)
TFI
(μs)
TTI
(μs)
TC
(μs)
0.5
25
100
1.3
1.6
0.23
0.26
0.30
0.30
0.35
0.40
0.30
0.36
1
25
100
1.5
1.7
0.10
0.13
0.14
0.26
0.05
0.06
0.16
0.29
1.5
25
100
1.8
3
0.07
0.08
0.10
0.22
0.05
0.08
0.16
0.28
Note: All Data Recorded in the inductive Switching Circuit Table 1
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Fig 1. Inductive Switching Measurements
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SWITCHING TIMES NOTE
In resistive switching circuits, rise, fall, and storage times have been defined and apply to both current and voltage
waveforms since they are in phase, However, for inductive loads which are common to SWITCHMODE power
supplies and hammer drivers, current and voltage waveforms are not in phase. Therefore, separate measurements
must be made on each wave form to determine the total switching time, For this reason, the following new terms have
been defined.
tSV=Voltage Storage Time, 90% IB1 to 10% Vclamp
tRV=Voltage Rise Time, 10-90% Vclamp
tFI=Current Fall Time, 90-10% IC
tTI=Current Tail, 10-2% IC
tC=Crossover Time, 10% Vclamp to 10% IC
An enlarged portion of the inductive switching waveforms is shown in Figure 1 to aid in the visual identity of
these terms.
For the designer, there is minimal switching loss during storage time and the predominant switching power losses
occur during the crossover interval and can be obtained using the standard equation from AN-222:
PSWT=1/2 VccIc (tc)f
In general, trv + tfi≒tc. However, at lower test currents this relationship may not be valid.
As is common with most switching transistor, resistive switching is specified at 25°C and has become a
benchmark for designers. However, for designers of high frequency converter circuits, the user oriented specifications
which make this a “SWITCHMODE” transistor are the inductive switching speeds (tc and tsv) which are guaranteed at
100°C.
RESISTIVE SWITCHING PERFORMANCE
Collector Current, IC (A)
Collector Current, IC (A)
10
7
2
1
0.7
0.5
Vcc=125V
Ic/IB=5
TJ=25°C
tR
Vcc=125V
Ic/IB=5
TJ=25°C
tS
5
3
0.3
Time, t (°C)
Time, t (°C)
2
0.2
td @ VBE(off)=5V
0.1
0.07
1
0.7
0.5
tR
0.3
0.05
0.2
0.03
0.02
0.02 0.03
0.05 0.07 0.1
0.2
0.3
0.5 0.7
1
0
20
0.05 0.07 0.1
0.2
0.3
0.5 0.7 1
2
Fig 3. Turn-Off Time
r(t),EFFECTIVE TRANSIENT THERMAL
RESISTANCE (NORMALIZED)
Fig 2. Turn-On Time
0.1
0.02 0.03
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SAFE OPERATING AREA INFORMATION
„
FORWARD BIAS
There are two limitations on the power handling ability of a transistor: average junction temperature and second
break-down. Safe operating area curves indicate Ic – VCE limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate.
The data of Figure 5 is based on Tc=25°C; TJ(pk) is variable depending on power level. Second breakdown pulse
limits are valid for duty cycles to 10% but must be derated when Tc≧25°C. Second breakdown limitations do not
derate the same as thermal limitations. Allowable current at the voltages shown on Figure 5 may be found at any case
tem-perature by using the appropriate curve on Figure 7.
TJ(pk) may be calculated from the data in Figure 5. At high case temperatures, thermal limitations will reduce the
power that can be handled to values less than the limitations imposed by second breakdown.
REVERSE BIAS
For inductive loads, high voltage and high current must be sustained simultaneously during turn–off, in most cases,
with the base to emitter junction reverse biased. Under these conditions the collector voltage must be held to a safe
level at or below a specific value of collector current. This can be accomplished by several means such as active
clamping, RC snubbing, load line shaping, etc. The safe level for these devices is specified as Reverse Bias Safe
Operating Area and represents the voltage–current conditions during re-verse biased turn–off. This rating is verified
under clamped conditions so that the device is never subjected to an ava-lanche mode. Figure 6 gives RBSOA
characteristics.
VCEV,COLLECTOR-EMITTER LAMP VOLTAGE(VOLTS)
VCE,COLLECTOR-EMITTERVOLTAGE (VOLTS)
1.6
5
10µS
2
100µS
1
1.0ms
dc
0.5
Tc=25?
0.2
THERMAL LIMIT (SINGLE PULSE)
BONDING WIRE LIMIT
SECOND BREAKDOWN LIMIT
CURVES APPLY BELOW RATED VCEO
0.1
0.05
0.02
0.01
1.2
5.0ms
V,VOLTAGE
(VOLTS)
Ic,COLLECTOR CURRENT (AMP)
10
5V
0.4
3V
0
5
10
20
50
100
200
VBE(off)=9V
Tj? 100?
IB1=1A
0.8
300
500
0
100
200
30
0
1.5V
400
500
600
800
700
Fig 6. Reverse Bias Safe Operating Area
Fig 5. Active Region Safe Operating Area
IC, CASE TEMPERATURE (? )
POWER DERATING FACTOR
1
SECOND BREAKDOWN
DERATING
0.8
0.
6
THERMAL
DERATING
0.4
0.2
0
20
40
60
80
100
120
140
160
Fig 7. Forward Bias Power Derating
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TYPICAL CHARACTERISTICS
„
IB, BASE CURRENT (AMP)
VCE,COLLECTOR -EMITTER VOLTAGE (VOLTS)
IC, COLLECTOR CURRENT (AMP)
80
60
Tj=150?
hFE,DC CURRENT GAIN
40
25?
30
20
-55?
10
8
VCE=2V
- - - - - -VCE=5V
6
4
0.02 0.03 0.05 0.07 0.1
0.2
0.3
0.5 0.7
2
Tj=25?
1.6
0.8
0.4
0
0.02
2
1
DC Current Gain
IC, COLLECTOR CURRENT (AMP)
V,VOLTAGE (VOLTS)
0.35
VBE(sat)@IC/IB=3
- - - - - - VBE(on)@VCE=2V
1.2
25°C
0.8
25°C
0.6
150°C
0.4
0.02 0.03 0.05 0.07 0.1
0.2 0.3
0.25
4
25°C
0.1
150°C
0.2 0.3
0.5 0.7 1
VR,REVERSE VOLTAGE (VOLTS)
300
200
125°C
75°C
50°C
Cib
100
70
50
30
20
0
10
-1
-0.4
REVERSE
-0.2
Cob
10
25°C
10
2
500
V,VOLTAGE (VOLTS)
IC,COLLECTOR CURRENT (? A)
10
Tj=-55°C
0.15
VBE,BASE-EMITTER VOLTAGE (VOLTS)
100°C
1
2
Collector-Emitter Saturation Region
Tj=150°C
2
IC/IB=3
0
0.02 0.03 0.05 0.07 0.1
2
0.5 0.7 1
3
10
1
0.5
IC, COLLECTOR CURRENT (AMP)
0.05
VCE=250V
10
0.2
0.2
Base-Emitter Voltage
10
0.05 0.1
0.3
Tj=-55°C
1
0.05 0.01 0.02
Collector Saturation Region
V,VOLTAGE (VOLTS)
1.4
1A 1.5A
Ic=0.1A 0.3A 0.5A
1.2
FORWARD
0
+0.2
Collector Cutoff Region
+0.4
+0.
6
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7
5
0.1 0.2
0.5 1
2
5
10 20
50 100 200 500 1000
Capacitance
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UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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