BTA12 600C4 D

BTA12-600C4G,
BTA12-800C4G
Triacs
Silicon Bidirectional Thyristors
Designed for high performance full-wave ac control applications
where high noise immunity and high commutating di/dt are required.
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Features
•
•
•
•
•
•
•
•
•
•
TRIACS
12 AMPERES RMS
600 thru 800 VOLTS
Blocking Voltage to 800 V
On-State Current Rating of 12 Amperes RMS at 85°C
Uniform Gate Trigger Currents in Three Quadrants
High Immunity to dV/dt − 100 V/ms minimum at 125°C
Minimizes Snubber Networks for Protection
Industry Standard TO-220AB Package
High Commutating dI/dt − 6.0 A/ms minimum at 125°C
Internally Isolated (2500 VRMS)
Indicates UL Registered — File #E69369
These are Pb−Free Devices
MT2
MT1
G
MARKING
DIAGRAM
4
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol
Peak Repetitive Off−State Voltage (Note 1)
(TJ = −40 to 125°C, Sine Wave,
50 to 60 Hz, Gate Open)
BTA12−600C4G
BTA12−800C4G
VDRM,
VRRM
On-State RMS Current
(Full Cycle Sine Wave, 60 Hz, TC = 85°C)
IT(RMS)
12
A
ITSM
120
A
Circuit Fusing Consideration (t = 8.3 ms)
I2t
40
A2sec
Peak Gate Current (TJ = 125°C, t = 20ms)
IGM
2.0
A
Peak Gate Power
(Pulse Width ≤ 1.0 ms, TC = 80°C)
PGM
20
W
Average Gate Power (TJ = 125°C)
PG(AV)
1.0
Operating Junction Temperature Range
TJ
Storage Temperature Range
Tstg
RMS Isolation Voltage
(t = 300 ms, R.H. ≤ 30%, TA = 25°C)
Viso
Peak Non-Repetitive Surge Current
(One Full Cycle Sine Wave, 60 Hz,
TC = 25°C)
Value
Unit
V
600
800
1
2
BTA12−xCG
AYWW
TO−220AB
CASE 221A
STYLE 12
3
x
A
Y
WW
G
= 6 or 8
= Assembly Location
= Year
= Work Week
= Pb−Free Package
PIN ASSIGNMENT
1
Main Terminal 1
2
Main Terminal 2
W
3
Gate
−40 to +125
°C
4
No Connection
−40 to +150
°C
2500
V
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. VDRM and VRRM for all types can be applied on a continuous basis. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
ORDERING INFORMATION
Device
Package
Shipping
BTA12−600C4G
TO−220AB
(Pb−Free)
50 Units / Rail
BTA12−800C4G
TO−220AB
(Pb−Free)
50 Units / Rail
*For additional information on our Pb−Free strategy and
soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference
Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2012
April, 2012 − Rev. 1
1
Publication Order Number:
BTA12−600C4/D
BTA12−600C4G, BTA12−800C4G
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance,
Symbol
Value
Unit
RqJC
RqJA
2.5
60
°C/W
TL
260
°C
Junction−to−Case (AC)
Junction−to−Ambient
Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 seconds
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted; Electricals apply in both directions)
Symbol
Characteristic
Min
Typ
Max
Unit
−
−
−
−
5.0
2.0
mA
mA
−
−
1.55
V
OFF CHARACTERISTICS
Peak Repetitive Blocking Current
(VD = Rated VDRM, VRRM; Gate Open)
TJ = 25°C
TJ = +125°C
IDRM,
IRRM
ON CHARACTERISTICS
Peak On-State Voltage
ITM = "17 A Peak; Pulse Width = 1 to 2 ms, Duty Cycle p 2%
VTM
Gate Trigger Current (Continuous dc)
(Main Terminal Voltage = 12 Vdc, RL = 30 W)
MT2(+), G(+)
MT2(+), G(−)
MT2(−), G(−)
MT2(−), G(+)
IGT
Latching Current (VD = 12 V, IG = 60 mA, IG4 = 120 mA)
MT2(+), G(+)
MT2(+), G(−)
MT2(−), G(−)
MT2(−), G(+)
IL
Gate Trigger Voltage (Continuous dc)
(Main Terminal Voltage = 12 Vdc, RL = 30 W)
MT2(+), G(+)
MT2(+), G(−)
MT2(−), G(−)
MT2(−), G(+)
VGT
Gate Non−Trigger Voltage (Continuous dc)
(Main Terminal Voltage = 12 V, RL = 30 W, TJ = +125°C)
All Four Quadrants
VGD
Holding Current
(VD = 12 Vdc, Gate Open, Initiating Current = "200 mA)
IH
mA
−
−
−
−
−
−
−
−
25
25
25
50
−
−
−
−
−
−
−
−
40
80
40
40
mA
V
−
−
−
−
−
−
−
−
1.3
1.3
1.3
1.3
V
0.2
−
−
−
−
25
mA
di/dt(c)
6.0
−
−
A/ms
dv/dt
100
−
−
V/ms
DYNAMIC CHARACTERISTICS
Critical Rate of Rise of Commutation Current (TC = +125°C)
Critical Rate of Rise of Off-State Voltage
(VD = Rated VDRM, Exponential Voltage Rise, Gate Open, TC = +125°C)
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2
BTA12−600C4G, BTA12−800C4G
Voltage Current Characteristic of Triacs
(Bidirectional Device)
+ Current
Symbol
Parameter
VTM
VDRM
Peak Repetitive Forward Off State Voltage
IDRM
Peak Forward Blocking Current
VRRM
Peak Repetitive Reverse Off State Voltage
IRRM
Peak Reverse Blocking Current
VTM
Maximum On State Voltage
IH
Holding Current
on state
IRRM at VRRM
IH
Quadrant 3
MainTerminal 2 −
IH
off state
VTM
Quadrant Definitions for a Triac
MT2 POSITIVE
(Positive Half Cycle)
+
(+) MT2
Quadrant II
(+) MT2
(−) IGT
GATE
Quadrant I
(+) IGT
GATE
MT1
MT1
REF
REF
IGT −
+ IGT
(−) MT2
Quadrant III
(−) MT2
Quadrant IV
(+) IGT
GATE
(−) IGT
GATE
MT1
MT1
REF
REF
−
MT2 NEGATIVE
(Negative Half Cycle)
All polarities are referenced to MT1.
With in−phase signals (using standard AC lines) quadrants I and III are used.
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3
Quadrant 1
MainTerminal 2 +
+ Voltage
IDRM at VDRM
125
PD(AV), AVERAGE POWER DISSIPATION (WATT)
TC , MAXIMUM ALLOWABLE CASE TEMPERATURE ( °C)
BTA12−600C4G, BTA12−800C4G
115
α = 30°
105
60°
90°
α
95
α
85
180°
dc
α = CONDUCTION ANGLE
75
0
2.0
4.0
6.0
8.0
10
12
14
28
24
α
20
α
dc
α = 180°
90°
60°
30°
α = CONDUCTION ANGLE
16
12
8.0
4.0
0
0
2.0
4.0
6.0
8.0
10
IT(RMS), RMS ON‐STATE CURRENT (AMP)
IT(RMS), RMS ON‐STATE CURRENT (AMP)
Figure 1. Current Derating
Figure 2. Power Dissipation
12
14
50
20
10
VGT , GATE TRIGGER VOLTAGE (NORMALIZED)
IT, INSTANTANEOUS ON‐STATE CURRENT (AMPS)
100
5.0
2.0
TJ = 25°C
TJ = 125°C
1.0
0.5
0.2
0.1
0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0 4.4
2.0
MAIN TERMINAL VOLTAGE = 12 Vdc
ALL QUADRANTS
1.6
1.2
0.8
0.4
0
-60
VT, INSTANTANEOUS ON‐STATE VOLTAGE (VOLTS)
-40
-20
0
20
40
60
TC, CASE TEMPERATURE (°C)
Figure 4. Typical Gate Trigger Voltage
Figure 3. Maximum On−State Voltage
Characteristics
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4
80
r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED)
2.8
2.0
IH , HOLDING CURRENT (NORMALIZED)
I GT, GATE TRIGGER CURRENT (NORMALIZED)
BTA12−600C4G, BTA12−800C4G
MAIN TERMINAL VOLTAGE = 12 Vdc
ALL QUADRANTS
1.6
1.2
0.8
0.4
0
-60
-40
-20
0
20
40
60
2.4
1.6
1.2
0.8
0.4
0
-60
80
MAIN TERMINAL VOLTAGE = 12 Vdc
ALL QUADRANTS
2.0
-40
-20
0
20
40
TC, CASE TEMPERATURE (°C)
TC, CASE TEMPERATURE (°C)
Figure 5. Typical Gate Trigger Current
Figure 6. Typical Holding Current
60
80
1.0
0.5
0.2
ZqJC(t) = r(t) • RqJC
0.1
0.05
0.02
0.01
0.1
0.2
0.5
1.0
2.0
5.0
20
50
t, TIME (ms)
100
Figure 7. Thermal Response
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5
200
500
1.0 k
2.0 k
5.0 k
10 k
BTA12−600C4G, BTA12−800C4G
PACKAGE DIMENSIONS
TO−220
CASE 221A−07
ISSUE AA
−T−
B
F
4
Q
T
SEATING
PLANE
C
S
A
U
1 2 3
H
K
Z
R
L
V
J
G
D
N
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
T
U
V
Z
INCHES
MIN
MAX
0.570
0.620
0.380
0.405
0.160
0.190
0.025
0.035
0.142
0.147
0.095
0.105
0.110
0.155
0.014
0.022
0.500
0.562
0.045
0.060
0.190
0.210
0.100
0.120
0.080
0.110
0.045
0.055
0.235
0.255
0.000
0.050
0.045
----0.080
STYLE 12:
PIN 1.
2.
3.
4.
MILLIMETERS
MIN
MAX
14.48
15.75
9.66
10.28
4.07
4.82
0.64
0.88
3.61
3.73
2.42
2.66
2.80
3.93
0.36
0.55
12.70
14.27
1.15
1.52
4.83
5.33
2.54
3.04
2.04
2.79
1.15
1.39
5.97
6.47
0.00
1.27
1.15
----2.04
MAIN TERMINAL 1
MAIN TERMINAL 2
GATE
NOT CONNECTED
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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BTA12−600C4/D
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