B120-E3, B130-E3, B140-E3, B150-E3, B160-E3 Datasheet

B120-E3, B130-E3, B140-E3, B150-E3, B160-E3
www.vishay.com
Vishay General Semiconductor
Surface Mount Schottky Barrier Rectifier
FEATURES
• Low profile package
• Ideal for automated placement
• Guardring for overvoltage protection
• Low power losses, high efficiency
• Low forward voltage drop
• High surge capability
• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
DO-214AC (SMA)
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
PRIMARY CHARACTERISTICS
TYPICAL APPLICATIONS
IF(AV)
1.0 A
VRRM
20 V, 30 V, 40 V, 50 V, 60 V
IFSM
30 A
VF
0.52 V, 0.75 V
TJ max.
125 °C, 150 °C
Package
DO-214AC
Diode variations
Single
For use in low voltage, high frequency inverters,
freewheeling, DC/DC converters, and polarity protection
applications.
Note
• These devices are not AEC-Q101 qualified
MECHANICAL DATA
Case: DO-214AC (SMA)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Terminals: Matte tin plated
J-STD-002 and JESD 22-B102
leads,
solderable
per
E3 suffix meets JESD 201 class 1A whisker test
Polarity: Color band denotes the cathode end
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Device marking code
B120
B130
B140
B150
B160
B12
B13
B14
B15
B16
20
30
40
50
60
UNIT
V
Maximum repetitive peak reverse voltage
VRRM
Maximum average forward rectified current (fig. 1)
IF(AV)
1.0
A
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
IFSM
30
A
dV/dt
10 000
V/μs
Voltage rate of change (rated VR)
Operating junction temperature range
- 65 to + 125
TJ
Storage temperature range
TSTG
- 65 to + 150
- 65 to + 150
°C
°C
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
Maximum instantaneous forward voltage
TEST CONDITIONS
1.0 A
Maximum reverse current at rated VR
SYMBOL
VF
TA = 25 °C
TA = 100 °C
(1)
IR (2)
B120
B130
B140
0.52
B150
B160
0.75
0.2
6.0
5.0
UNIT
V
mA
Notes
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width  40 ms
Revision: 13-Aug-13
Document Number: 88946
1
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
B120-E3, B130-E3, B140-E3, B150-E3, B160-E3
www.vishay.com
Vishay General Semiconductor
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Typical thermal resistance
B120
B130
B140
RJA (1)
95
RJL (1)
30
B150
B160
UNIT
°C/W
Note
(1) PCB mounted with 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pad areas
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g)
PREFERRED PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
B140-E3/61T
0.064
61T
1800
7" diameter plastic tape and reel
B140-E3/5AT
0.064
5AT
7500
13" diameter plastic tape and reel
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
0.8
Resistive or Inductive Load
B150, B160
B150, B160
0.8
B120, B130, B140
0.6
0.4
PCB Mounted on
0.2" x 0.2" (5.0 mm x 5.0 mm)
Copper Pad Areas
0.2
D = 0.5
0.6
D = 0.3
0.5
D = 1.0
D = 0.2
D = 0.1
0.4
0.3
T
0.2
0.1
0
D = tp/T
tp
0.8
1.0
0
0
25
50
75
100
125
150
0
0.2
0.4
0.6
1.2
Lead Temperature (°C)
Average Forward Current (A)
Fig. 1 - Maximum Forward Current Derating Curve
Fig. 3 - Forward Power Loss Characteristics
0.8
40
B120, B130, B140
Peak Forward Surge Current (A)
D = 0.8
0.7
Average Power Loss (W)
D = 0.8
0.7
1.0
Average Power Loss (W)
Average Forward Rectified Current (A)
1.2
D = 0.5
0.6
D = 0.3
0.5
D = 1.0
D = 0.2
D = 0.1
0.4
0.3
T
0.2
0.1
D = tp/T
tp
0.8
1.0
0
30
20
10
0
0
0.2
0.4
0.6
1.2
1
10
100
Average Forward Current
Number of Cycles at 50 Hz
Fig. 2 - Forward Power Loss Characteristics
Fig. 4 - Typical Instantaneous Forward Characteristics
Revision: 13-Aug-13
Document Number: 88946
2
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
B120-E3, B130-E3, B140-E3, B150-E3, B160-E3
www.vishay.com
Vishay General Semiconductor
100 000
TJ = 150 °C
Instantaneous Reverse Current (μA)
Instantaneous Forward Current (A)
10
TJ = 125 °C
1
TJ = 25 °C
0.1
B120, B130, B140
B120, B130, B140
B150, B160
1000
100
TJ = 125 °C
TJ = 25 °C
10
1
0.1
0.01
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
10
20
30
40
50
60
70
80
90
100
Instantaneous Forward Voltage (V)
Percent of Rated Peak Reverse Voltage (%)
Fig. 5 - Typical Instantaneous Forward Characteristics
Fig. 7 - Typical Reverse Leakage Characteristics
1000
10
TJ = 150 °C
Junction Capacitance (pF)
Instantaneous Forward Current (A)
TJ = 150 °C
10 000
TJ = 125 °C
1
TJ = 25 °C
0.1
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
100
B120, B130, B140
B150, B160
B150, B160
0.01
10
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0.1
10
1
Instantaneous Forward Voltage (V)
Reverse Voltage (V)
Fig. 6 - Typical Instantaneous Forward Characteristics
Fig. 8 - Typical Junction Capacitance
100
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
DO-214AC (SMA)
Cathode Band
Mounting Pad Layout
0.110 (2.79)
0.100 (2.54)
0.065 (1.65)
0.049 (1.25)
0.177 (4.50)
0.157 (3.99)
0.012 (0.305)
0.006 (0.152)
0.060 (1.52)
MIN.
0.208 (5.28)
REF.
0.090 (2.29)
0.078 (1.98)
0.060 (1.52)
0.030 (0.76)
0.074 (1.88)
MAX.
0.066 (1.68)
MIN.
0.008 (0.203)
0 (0)
0.208 (5.28)
0.194 (4.93)
Revision: 13-Aug-13
Document Number: 88946
3
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 02-Oct-12
1
Document Number: 91000
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