VSSA210 Datasheet

VSSA210
www.vishay.com
Vishay General Semiconductor
Surface Mount Trench MOS Barrier Schottky Rectifier
FEATURES
• Low profile package
TMBS
®
• Ideal for automated placement
• Trench MOS Schottky technology
• Low power losses, high efficiency
• Low forward voltage drop
• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
DO-214AC (SMA)
TYPICAL APPLICATIONS
For use in low voltage, high frequency inverters,
freewheeling, DC/DC converters, and polarity protection
applications.
PRIMARY CHARACTERISTICS
IF(AV)
2.0 A
VRRM
100 V
IFSM
60 A
EAS
24 mJ
VF at IF = 2.0 A
0.56 V
TJ max.
150 °C
MECHANICAL DATA
Case: DO-214AC (SMA)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Terminals: Matte tin plated leads, solderable
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
per
Polarity: Color band denotes the cathode end
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
UNIT
V2B
Device marking code
Maximum repetitive peak reverse voltage
VSSA210
VRRM
100
V
(1)
2.0
IF (2)
1.7
Peak forward surge current 10 ms single half sine-wave
superimposed on rated load
IFSM
60
A
Non-repetitive avalanche energy
at TJ = 25 °C, L = 60 mH
EAS
24
mJ
Peak repetitive reverse current at tp = 2 μs, 1 kHz,
TJ = 38 °C ± 2 °C
IRRM
1.0
A
Operating junction and storage temperature range
TJ, TSTG
- 40 to + 150
°C
Maximum DC forward current
IF
A
Notes
(1) Mounted on 8 mm x 8 mm pad areas, 1 oz. FR4 P.C.B.
(2) Free air, mounted on recommended copper pad area
Revision: 27-Mar-12
Document Number: 89137
1
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VSSA210
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
TEST CONDITIONS
PARAMETER
IR = 1.0 mA
Breakdown voltage
VBR
100 (minimum)
-
0.61
0.70
0.56
0.65
TA = 25 °C
1.0
-
μA
TA = 125 °C
0.95
-
mA
TA = 25 °C
VF (1)
TA = 125 °C
VR = 70 V
Reverse current
IR (2)
TA = 25 °C
VR = 100 V
Typical junction capacitance
TYP.
TA = 25 °C
IF = 2.0 A
Instantaneous forward voltage
SYMBOL
TA = 125 °C
CJ
4.0 V, 1 MHz
MAX.
UNIT
V
3.5
150
μA
2.2
15
mA
175
-
pF
Notes
(1) Pulse test: 300 µs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width  40 ms
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
Typical thermal resistance
SYMBOL
VSSA210
RJA (1)
135
RJM (2)
25
UNIT
°C/W
Notes
(1) Free air, mounted on recommended P.C.B. 1 oz. pad area. Thermal resistance R
JA - junction to ambient
(2) Units mounted on P.C.B. with 8 mm x 8 mm copper pad areas. R
JM - junction to mount
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g)
PREFERRED PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
VSSA210-E3/61T
0.064
61T
1800
7" diameter plastic tape and reel
VSSA210-E3/5AT
0.064
5AT
7500
13" diameter plastic tape and reel
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
1.6
D = 0.5
1.4
2.0
Average Power Loss (W)
Average Forward Rectified Current (A)
2.4
1.6
1.2
0.8
0.4
D = 0.8
D = 0.3
D = 0.2
1.2
1.0
D = 1.0
D = 0.1
0.8
0.6
T
0.4
0.2
TM Measured at Terminal
D = tp/T
0
tp
0
0
25
50
75
100
125
150
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4
TM - Mount Temperature (°C)
Average Forward Current (A)
Fig. 1 - Maximum Forward Current Derating Curve
Fig. 2 - Forward Power Loss Characteristics
Revision: 27-Mar-12
Document Number: 89137
2
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VSSA210
www.vishay.com
Vishay General Semiconductor
1000
TA = 125 °C
1
TA = 100 °C
100
TA = 25 °C
0.1
10
0
0.2
0.4
0.6
1.0
0.8
1.2
0.1
1.4
1
10
100
Instantaneous Forward Voltage (V)
Reverse Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics
Fig. 5 - Typical Junction Capacitance
1000
Transient Thermal Impedance (°C/W)
10
Instantaneous Reverse Current (mA)
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
TA = 150 °C
Junction Capacitance (pF)
Instantaneous Forward Current (A)
10
TA = 150 °C
1
TA = 125 °C
TA = 100 °C
0.1
0.01
0.001
TA = 25 °C
20
30
40
50
60
70
80
90
100
10
1
0.01
0.0001
10
Junction to Ambient
100
0.1
1
10
100
t - Pulse Duration (s)
Percent of Rated Peak Reverse Voltage (%)
Fig. 4 - Typical Reverse Characteristics
Fig. 6 - Typical Transient Thermal Impedance
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
DO-214AC (SMA)
Cathode Band
Mounting Pad Layout
0.110 (2.79)
0.100 (2.54)
0.065 (1.65)
0.049 (1.25)
0.177 (4.50)
0.157 (3.99)
0.012 (0.305)
0.006 (0.152)
0.060 (1.52)
MIN.
0.208 (5.28)
REF.
0.090 (2.29)
0.078 (1.98)
0.060 (1.52)
0.030 (0.76)
0.074 (1.88)
MAX.
0.066 (1.68)
MIN.
0.008 (0.203)
0 (0)
0.208 (5.28)
0.194 (4.93)
Revision: 27-Mar-12
Document Number: 89137
3
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 02-Oct-12
1
Document Number: 91000