SENSITRON SEMICONDUCTOR SPM1002 Technical Data DATASHEET 5278, Rev. - THREE-PHASE IGBT BRIDGE with SiC DIODES, BRAKE MOSFET and INTEGRATED BRAKE RESISTOR DESCRIPTION: 600 VOLT, 30 AMP, THREE PHASE IGBT BRIDGE FAST SWITCHING 3RD GENERATION IGBT SILICON CARBIDE (SiC) 20A 600V ANTI PARALLEL DIODES – ZERO RECOVERY AND NO ADDITIONAL LOSSES ON COMPLIMENTARY IGBT 600V, 22A BRAKE MOSFET INTEGRATED G-E AND G-S RESISTORS FOR HIGHER ESD IMMUNITY INTEGRATED BRAKE RESISTOR WITH DIRECT HEAT TRANSFER TO BASE RTD TO MONITOR MODULE TEMPERATURE (-700C to 2000C range) AlSiC BASE PLATE FOR HIGH TEMPERATURE CYCLING CAPABILITY LOW PROFILE LIGHT WEIGHT PACKAGE ©2013 Sensitron Semiconductor 221 West Industry Court Deer Park, NY 11729 (631) 586 7600 FAX (631) 242 9798 www.sensitron.com [email protected] Page 1 SPM1002 SENSITRON SEMICONDUCTOR Technical Data DATASHEET 5278, Rev. THREE PHASE IGBT SECTION 0 ELECTRICAL CHARACTERISTICS PER IGBT DEVICE (Tj=25 C UNLESS OTHERWISE SPECIFIED) PARAMETER SYMBOL MIN TYP MAX UNIT BVCES 600 - - V VGETH 4.1 5.1 5.7 V - - 30 A INVERTER IGBT SPECIFICATIONS Collector to Emitter Breakdown Voltage IC = 1mA, VGE = 0V Gate Threshold Voltage IC = 1mA, VCE = VGE O Continuous Collector Current TC = 25 C IC O TC = 80 C Zero Gate Voltage Collector Current 19 ICES o - - VCE = 600V, VGE = 0V Ti = 25 C 0.3 mA 3.0 mA 2.5 V 200 nA o VCE = 480V, VGE = 0V Ti = 125 C O Collector to Emitter Saturation Voltage, Tj = 25 C VCE(SAT) - O IC = 30A, VGE = 15V Tj = 125 C Gate to Emitter Leakage Current 2.1 2.4 IGES VCE = 0V, VGE = 20V IGBT Gate – Emitter Resistance --- - 100 - K Ohm IGBT turn-on switching loss (when used with SiC diode) o VCE = 400V, IC = 30A, RG = 10 Ω, Tj = 25 C EON - 0.75 - mJ IGBT turn-off switching loss o VCE = 400V, IC = 30A, RG = 10 Ω, Tj = 25 C EOFF - 0.45 - mJ Junction To Case Thermal Resistance RJC - - 1.0 PIV 600 - - V IF - - 20 A VF - 1.8 2.0 V nC o C/W INVERTER DIODE SPECIFICATIONS Diode Peak Inverse Voltage O Continuous Forward Current, TC = 80 C Diode Forward Voltage O IF = 20A, Tj = 25 C O Tj = 125 C 2.1 Total Capacitive Charge O IF=20A, VRR= 300V, Tj = 25 C Qc - 50 - Junction To Case Thermal Resistance RJC - - 1.0 ©2013 Sensitron Semiconductor 221 West Industry Court Deer Park, NY 11729 (631) 586 7600 FAX (631) 242 9798 www.sensitron.com [email protected] Page 2 o C/W SPM1002 SENSITRON SEMICONDUCTOR Technical Data DATASHEET 5278, Rev. BRAKE MOSFET SPECIFICATIONS Drain to Source Breakdown Voltage VDS 600 - - V - - 22 A ID = 1mA, VGS = 0V O Continuous Drain Current TC = 25 C ID O TC = 80 C Gate Threshold Voltage ID = 0.25mA, VDS = VGS Zero Gate Voltage Drain Current o 12 VGSTH 2 3 4 V IDSS - - 0.1 mA RDS(ON) - 0.19 0.22 Ω VDS = 600 V, VGS = 0V Ti=25 C Drain to Source On Resistance, O ID = 11A Tj = 25 C O Tj = 125 C 0.32 Mosfet Gate – Source Resistance Pulsed Collector Current, 0.5ms Total Gate Charge, , O ID = 11A, VDS = 10V Tj = 25 C Junction To Case Thermal Resistance - 100 - K Ohm IDM - - 60 A Qg - 75 120 nC RJC - - 0.9 BR - 300 - Ω PR - 4 3 - W o C/W BRAKE RESISTOR SPECIFICATIONS Resistor Value O Power Rating TC = 25 C O TC = 80 C RTD SPECIFICATIONS (R = 1 kΩ at 00C) 0 0 Temperature coefficient (0 C – 100 C) KT 3850 ppm/K R-55 788.3 Ω R125 1481.3 Ω 0 Resistance at -55 C 0 Resistance at 125 C MODULE STORAGE AND OPERATING CONDITIONS Operating Junction Temperature Tj -55 - 150 o Storage Ambient Temperature Ts -55 - 150 o Operating Case / AmbientTemperature Tc -55 - 100 o - 2500 - - VDC - - 95 grams C C C MODULE ISOLATION All pins to baseplate (sea level) MODULE WEIGHT Total Weight ©2013 Sensitron Semiconductor 221 West Industry Court Deer Park, NY 11729 (631) 586 7600 FAX (631) 242 9798 www.sensitron.com [email protected] Page 3 SPM1002 SENSITRON SEMICONDUCTOR Technical Data DATASHEET 5278, Rev. MECHANICAL OUTLINE 3.20 [81.3] 2.910 [73.91] 2.595 [65.91] 0.333 [8.46] E7 G7 RTD1 RTD2 E6 G6 E5 G5 E4 G4 E3 G3 E2 G2 E1 G1 0.150 [3.81] TYP (15X) 0.800 [20.32] MARKING AREA 1.60 [40.6] 1.43 [36.3] Ø0.150 [Ø3.81] (2X) 0.400 [10.16] 0.370 [9.41] V+ 0.600 [15.24] P3 0.650 [16.51] P2 0.300 [7.62] P1 V- 0.530 [13.46] 0.050 [1.27] TYP R0.150 [R3.81] (2X) INCH [MM] TERMINAL FINISH: NICKEL 0.33 [8.5] TYP 0.46 [11.7] 0.26 [6.6] TOLERANCES UNLESS OTHERWISE NOTED .XX= +/- .020 [.50] .XXX= +/- .010 [.254] RECOMMEND TORQUE VALUE : 10 IN-LBS. ©2013 Sensitron Semiconductor 221 West Industry Court Deer Park, NY 11729 (631) 586 7600 FAX (631) 242 9798 www.sensitron.com [email protected] Page 4 SPM1002 SENSITRON SEMICONDUCTOR Technical Data DATASHEET 5278, Rev. SCHEMATIC DISCLAIMER: 1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product characteristics. Before ordering, purchasers are advised to contact the Sensitron Semiconductor sales department for the latest version of the datasheet(s). 2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment, medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by means of users’ fail-safe precautions or other arrangement . 3- In no event shall Sensitron Semiconductor be liable for any damages that may result from an accident or any other cause during operation of the user’s units according to the datasheet(s). 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When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and regulations. ©2013 Sensitron Semiconductor 221 West Industry Court Deer Park, NY 11729 (631) 586 7600 FAX (631) 242 9798 www.sensitron.com [email protected] Page 5