5278

SENSITRON
SEMICONDUCTOR
SPM1002
Technical Data
DATASHEET 5278, Rev. -
THREE-PHASE IGBT BRIDGE with SiC DIODES,
BRAKE MOSFET and INTEGRATED BRAKE RESISTOR
DESCRIPTION:

600 VOLT, 30 AMP, THREE PHASE IGBT BRIDGE

FAST SWITCHING 3RD GENERATION IGBT

SILICON CARBIDE (SiC) 20A 600V ANTI PARALLEL DIODES – ZERO RECOVERY AND NO
ADDITIONAL LOSSES ON COMPLIMENTARY IGBT

600V, 22A BRAKE MOSFET

INTEGRATED G-E AND G-S RESISTORS FOR HIGHER ESD IMMUNITY

INTEGRATED BRAKE RESISTOR WITH DIRECT HEAT TRANSFER TO BASE

RTD TO MONITOR MODULE TEMPERATURE (-700C to 2000C range)

AlSiC BASE PLATE FOR HIGH TEMPERATURE CYCLING CAPABILITY

LOW PROFILE LIGHT WEIGHT PACKAGE
©2013 Sensitron Semiconductor  221 West Industry Court  Deer Park, NY 11729
(631) 586 7600 FAX (631) 242 9798  www.sensitron.com  [email protected]  Page 1
SPM1002
SENSITRON
SEMICONDUCTOR
Technical Data
DATASHEET 5278, Rev. THREE PHASE IGBT SECTION
0
ELECTRICAL CHARACTERISTICS PER IGBT DEVICE
(Tj=25 C UNLESS OTHERWISE SPECIFIED)
PARAMETER
SYMBOL
MIN
TYP
MAX
UNIT
BVCES
600
-
-
V
VGETH
4.1
5.1
5.7
V
-
-
30
A
INVERTER IGBT SPECIFICATIONS
Collector to Emitter Breakdown Voltage
IC = 1mA, VGE = 0V
Gate Threshold Voltage
IC = 1mA, VCE = VGE
O
Continuous Collector Current
TC = 25 C
IC
O
TC = 80 C
Zero Gate Voltage Collector Current
19
ICES
o
-
-
VCE = 600V, VGE = 0V Ti = 25 C
0.3
mA
3.0
mA
2.5
V
200
nA
o
VCE = 480V, VGE = 0V Ti = 125 C
O
Collector to Emitter Saturation Voltage,
Tj = 25 C
VCE(SAT)
-
O
IC = 30A, VGE = 15V
Tj = 125 C
Gate to Emitter Leakage Current
2.1
2.4
IGES
VCE = 0V, VGE = 20V
IGBT Gate – Emitter Resistance
---
-
100
-
K Ohm
IGBT turn-on switching loss (when used with SiC diode)
o
VCE = 400V, IC = 30A, RG = 10 Ω, Tj = 25 C
EON
-
0.75
-
mJ
IGBT turn-off switching loss
o
VCE = 400V, IC = 30A, RG = 10 Ω, Tj = 25 C
EOFF
-
0.45
-
mJ
Junction To Case Thermal Resistance
RJC
-
-
1.0
PIV
600
-
-
V
IF
-
-
20
A
VF
-
1.8
2.0
V
nC
o
C/W
INVERTER DIODE SPECIFICATIONS
Diode Peak Inverse Voltage
O
Continuous Forward Current, TC = 80 C
Diode Forward Voltage
O
IF = 20A, Tj = 25 C
O
Tj = 125 C
2.1
Total Capacitive Charge
O
IF=20A, VRR= 300V, Tj = 25 C
Qc
-
50
-
Junction To Case Thermal Resistance
RJC
-
-
1.0
©2013 Sensitron Semiconductor  221 West Industry Court  Deer Park, NY 11729
(631) 586 7600 FAX (631) 242 9798  www.sensitron.com  [email protected]  Page 2
o
C/W
SPM1002
SENSITRON
SEMICONDUCTOR
Technical Data
DATASHEET 5278, Rev. BRAKE MOSFET SPECIFICATIONS
Drain to Source Breakdown Voltage
VDS
600
-
-
V
-
-
22
A
ID = 1mA, VGS = 0V
O
Continuous Drain Current
TC = 25 C
ID
O
TC = 80 C
Gate Threshold Voltage
ID = 0.25mA, VDS = VGS
Zero Gate Voltage Drain Current
o
12
VGSTH
2
3
4
V
IDSS
-
-
0.1
mA
RDS(ON)
-
0.19
0.22
Ω
VDS = 600 V, VGS = 0V Ti=25 C
Drain to Source On Resistance,
O
ID = 11A
Tj = 25 C
O
Tj = 125 C
0.32
Mosfet Gate – Source Resistance
Pulsed Collector Current, 0.5ms
Total Gate Charge, ,
O
ID = 11A, VDS = 10V
Tj = 25 C
Junction To Case Thermal Resistance
-
100
-
K Ohm
IDM
-
-
60
A
Qg
-
75
120
nC
RJC
-
-
0.9
BR
-
300
-
Ω
PR
-
4
3
-
W
o
C/W
BRAKE RESISTOR SPECIFICATIONS
Resistor Value
O
Power Rating
TC = 25 C
O
TC = 80 C
RTD SPECIFICATIONS (R = 1 kΩ at 00C)
0
0
Temperature coefficient (0 C – 100 C)
KT
3850
ppm/K
R-55
788.3
Ω
R125
1481.3
Ω
0
Resistance at -55 C
0
Resistance at 125 C
MODULE STORAGE AND OPERATING CONDITIONS
Operating Junction Temperature
Tj
-55
-
150
o
Storage Ambient Temperature
Ts
-55
-
150
o
Operating Case / AmbientTemperature
Tc
-55
-
100
o
-
2500
-
-
VDC
-
-
95
grams
C
C
C
MODULE ISOLATION
All pins to baseplate (sea level)
MODULE WEIGHT
Total Weight
©2013 Sensitron Semiconductor  221 West Industry Court  Deer Park, NY 11729
(631) 586 7600 FAX (631) 242 9798  www.sensitron.com  [email protected]  Page 3
SPM1002
SENSITRON
SEMICONDUCTOR
Technical Data
DATASHEET 5278, Rev. MECHANICAL OUTLINE
3.20
[81.3]
2.910
[73.91]
2.595
[65.91]
0.333
[8.46]
E7
G7 RTD1 RTD2
E6
G6
E5
G5
E4
G4
E3
G3
E2
G2
E1
G1
0.150
[3.81] TYP (15X)
0.800
[20.32]
MARKING
AREA
1.60
[40.6]
1.43
[36.3]
Ø0.150
[Ø3.81] (2X)
0.400
[10.16]
0.370
[9.41]
V+
0.600
[15.24]
P3
0.650
[16.51]
P2
0.300
[7.62]
P1
V-
0.530
[13.46]
0.050
[1.27] TYP
R0.150
[R3.81] (2X)
INCH
[MM]
TERMINAL FINISH: NICKEL
0.33
[8.5] TYP
0.46
[11.7]
0.26
[6.6]
TOLERANCES UNLESS OTHERWISE NOTED
.XX= +/- .020 [.50]
.XXX= +/- .010 [.254]
RECOMMEND TORQUE VALUE : 10 IN-LBS.
©2013 Sensitron Semiconductor  221 West Industry Court  Deer Park, NY 11729
(631) 586 7600 FAX (631) 242 9798  www.sensitron.com  [email protected]  Page 4
SPM1002
SENSITRON
SEMICONDUCTOR
Technical Data
DATASHEET 5278, Rev. SCHEMATIC
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©2013 Sensitron Semiconductor  221 West Industry Court  Deer Park, NY 11729
(631) 586 7600 FAX (631) 242 9798  www.sensitron.com  [email protected]  Page 5
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