SENSITRON SEMICONDUCTOR SPM1001 Technical Data DATASHEET 5361, Rev. - THREE-PHASE IGBT BRIDGE with SiC DIODES, BRAKE MOSFET and INTEGRATED BRAKE RESISTOR DESCRIPTION: 600 VOLT, 50 AMP, THREE PHASE IGBT BRIDGE SILICON CARBIDE (SiC) 20A 600V ANTI PARALLEL DIODES – ZERO RECOVERY AND NO ADDITIONAL LOSSES ON COMPLIMENTARY IGBT 600V, 22A BRAKE MOSFET INTEGRATED G-E AND G-S RESISTORS FOR HIGHER ESD IMMUNITY INTEGRATED BRAKE RESISTOR WITH DIRECT HEAT TRANSFER TO BASE RTD TO MONITOR MODULE TEMPERATURE AlSiC BASE PLATE FOR HIGH TEMPERATURE CYCLING CAPABILITY LOW PROFILE LIGHT WEIGHT PACKAGE ©2013 Sensitron Semiconductor 221 West Industry Court Deer Park, NY 11729 (631) 586 7600 FAX (631) 242 9798 www.sensitron.com [email protected] Page 1 SPM1001 SENSITRON SEMICONDUCTOR Technical Data DATASHEET 5361, Rev. THREE PHASE IGBT SECTION 0 ELECTRICAL CHARACTERISTICS PER IGBT DEVICE (Tj=25 C UNLESS OTHERWISE SPECIFIED) PARAMETER SYMBOL MIN TYP MAX UNIT BVCES 600 - - V VGETH 4.5 5.5 6.5 V - - 50 A INVERTER IGBT SPECIFICATIONS Collector to Emitter Breakdown Voltage IC = 1mA, VGE = 0V Gate Threshold Voltage IC = 1mA, VCE = VGE O Continuous Collector Current TC = 25 C IC O TC = 80 C Zero Gate Voltage Collector Current 28 ICES o - - VCE = 600V, VGE = 0V Ti = 25 C o VCE = 480V, VGE = 0V Ti = 125 C O Collector to Emitter Saturation Voltage, Tj = 25 C VCE(SAT) - O IC = 50A, VGE = 15V Tj = 125 C Gate to Emitter Leakage Current 2.1 0.5 mA 15 mA 2.5 V 200 nA 2.3 IGES VCE = 0V, VGE = 20V IGBT Gate – Emitter Resistance - 100 - K Ohm IGBT turn-on switching loss o VCE = 300V, IC = 50A, Tj = 25 C EON - 0.6 - mJ IGBT turn-off switching loss o VCE = 300V, IC = 50A, Tj = 25 C EOFF - 1.6 - mJ Junction To Case Thermal Resistance RJC - - 0.75 PIV 600 - - V IF - - 20 A VF - 1.8 2.0 V nC o C/W INVERTER DIODE SPECIFICATIONS Diode Peak Inverse Voltage O Continuous Forward Current, TC = 80 C Diode Forward Voltage O IF = 20A, Tj = 25 C O Tj = 125 C 2.1 Total Capacitive Charge O IF=20A, VRR= 300V, Tj = 25 C Qc - 50 - Junction To Case Thermal Resistance RJC - - 1.0 ©2013 Sensitron Semiconductor 221 West Industry Court Deer Park, NY 11729 (631) 586 7600 FAX (631) 242 9798 www.sensitron.com [email protected] Page 2 o C/W SPM1001 SENSITRON SEMICONDUCTOR Technical Data DATASHEET 5361, Rev. BRAKE MOSFET SPECIFICATIONS Drain to Source Breakdown Voltage VDS 600 - - V - - 22 A ID = 1mA, VGS = 0V O Continuous Drain Current TC = 25 C ID O TC = 80 C Gate Threshold Voltage ID = 0.25mA, VDS = VGS Zero Gate Voltage Drain Current o VDS = 600 V, VGS = 0V Ti=25 C Drain to Source On Resistance, ID = 11A O Tj = 25 C 12 VGSTH 2 3 4 V IDSS - - 0.1 mA RDS(ON) - 0.19 0.22 Ω O Tj = 125 C 0.32 Mosfet Gate – Source Resistance Pulsed Collector Current, 0.5ms Total Gate Charge, , ID = 11A, VDS = 10V O Tj = 25 C Junction To Case Thermal Resistance - 100 - K Ohm IDM - - 60 A Qg - 75 120 nC RJC - - 0.9 BR - 300 - Ω PR - 4 3 - W o C/W BRAKE RESISTOR SPECIFICATIONS Resistor Value O Power Rating TC = 25 C O TC = 80 C RTD SPECIFICATIONS (R = 1kΩ at 00C) 0 0 Temperature coefficient (0 C – 100 C) 0 KT 0 Resistance at -55 C (temperature tolerance ±0.58 C) 0 R-55 0 Resistance at 125 C (temperature tolerance ±0.93 C) R 3850 ppm/K 783.19 Ω 1479.51 Ω 1 MODULE STORAGE AND OPERATING CONDITIONS 2 5 -55 - 150 o Ts -55 - 150 o Tc -55 - 100 o - 2500 - - VDC - - 95 grams Operating Junction Temperature Tj Storage Ambient Temperature Operating Case / AmbientTemperature C C C MODULE ISOLATION All pins to baseplate (sea level) MODULE WEIGHT Total Weight ©2013 Sensitron Semiconductor 221 West Industry Court Deer Park, NY 11729 (631) 586 7600 FAX (631) 242 9798 www.sensitron.com [email protected] Page 3 SPM1001 SENSITRON SEMICONDUCTOR Technical Data DATASHEET 5361, Rev. MECHANICAL OUTLINE 3.20 [81.3] 2.910 [73.91] 2.595 [65.91] 0.333 [8.46] E7 G7 RTD1 RTD2 E6 G6 E5 G5 E4 G4 E3 G3 E2 G2 E1 G1 0.150 [3.81] TYP (15X) 0.800 [20.32] MARKING AREA 1.60 [40.6] 1.43 [36.3] Ø0.150 [Ø3.81] (2X) 0.400 [10.16] 0.370 [9.41] V+ 0.600 [15.24] P3 0.650 [16.51] P2 0.300 [7.62] P1 V- 0.530 [13.46] 0.050 [1.27] TYP R0.150 [R3.81] (2X) INCH [MM] TERMINAL FINISH: NICKEL 0.33 [8.5] TYP 0.46 [11.7] 0.26 [6.6] TOLERANCES UNLESS OTHERWISE NOTED .XX= +/- .020 [.50] .XXX= +/- .010 [.254] RECOMMEND TORQUE VALUE : 10 IN-LBS. ©2013 Sensitron Semiconductor 221 West Industry Court Deer Park, NY 11729 (631) 586 7600 FAX (631) 242 9798 www.sensitron.com [email protected] Page 4 SPM1001 SENSITRON SEMICONDUCTOR Technical Data DATASHEET 5361, Rev. SCHEMATIC Note: The design includes G-E and G-S resistors for ESD protection as in table above (not shown in schematic). DISCLAIMER: 1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product characteristics. Before ordering, purchasers are advised to contact the Sensitron Semiconductor sales department for the latest version of the datasheet(s). 2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment, medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by means of users’ fail-safe precautions or other arrangement . 3- In no event shall Sensitron Semiconductor be liable for any damages that may result from an accident or any other cause during operation of the user’s units according to the datasheet(s). Sensitron Semiconductor assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information, products or circuits described in the datasheets. 4- In no event shall Sensitron Semiconductor be liable for any failure in a semiconductor device or any secondary damage resulting from use at a value exceeding the absolute maximum rating. 5- No license is granted by the datasheet(s) under any patents or other rights of any third party or Sensitron Semiconductor. 6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of Sensitron Semiconductor. 7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and regulations. ©2013 Sensitron Semiconductor 221 West Industry Court Deer Park, NY 11729 (631) 586 7600 FAX (631) 242 9798 www.sensitron.com [email protected] Page 5