BAT54-02V-V-G Datasheet

BAT54-02V-V-G
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Vishay Semiconductors
Small Signal Schottky Diode
FEATURES
• This diode features very low turn-on voltage and
fast switching
2
1
22321
• This device is protected by a PN junction guard
ring against excessive voltage, such as
electrostatic discharges
• Space saving SOD-523 package
MECHANICAL DATA
Case: SOD-523
Weight: approx. 1.4 mg
Molding compound flammability rating: UL94 V-0
Terminals: high temperature soldering guaranteed:
260 °C/4 x 10 s at terminals
Packaging codes/options:
18/10K per 13" reel (8 mm tape), 10K/box
08/3K per 7" reel (8 mm tape), 3K/box
• Material categorization:
for definitions of compliance
www.vishay.com/doc?99912
please
see






PARTS TABLE
PART
BAT54-02V-V-G
ORDERING CODE
BAT54-02V-V-G-18 or BAT54-02V-V-G-08
INTERNAL
TYPE MARKING
CONSTRUCTION
REMARKS
.V
Tape and reel
SYMBOL
VALUE
UNIT
VRRM
30
V
Single diode
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
Repetitive peak reverse voltage
= working peak reverse voltage
Forward continuous current
IF
200
mA
Repetitive peak forward current
IFRM
300
mA
Surge forward current
IFSM
600
mA
Power dissipation
Ptot
150
mW
SYMBOL
VALUE
UNIT
RthJA
680
K/W
Tj
125
°C
Tstg
- 65 to + 150
°C
THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
Thermal resistance junction to ambient air
Junction temperature
Storage temperature range
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
Reverse breakdown voltage
Leakage current
Forward voltage
Diode capacitance
Reverse recovery time
TEST CONDITION
SYMBOL
MIN.
100 μA pulses
V(BR)
30
TYP.
MAX.
UNIT
Pulse test tp < 300 μs,
 < 2 % at VR = 25 V
IR
2
μA
IF = 0.1mA, tp < 300 μs,  < 2 %
VF
240
mV
IF = 1 mA, tp < 300 μs,  < 2 %
VF
320
mV
IF = 10 mA, tp < 300 μs,  < 2 %
VF
400
mV
IF = 30 mA, tp < 300 μs,  < 2 %
VF
500
mV
IF = 100 mA, tp < 300 μs,  < 2 %
VF
800
mV
VR = 1 V, f = 1 MHz
CD
10
pF
IF = 10 mA, IR = 10 mA,
iR = 1 mA, RL = 100 
trr
5
ns
V
Rev. 1.2, 18-Nov-15
Document Number: 82394
1
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BAT54-02V-V-G
www.vishay.com
Vishay Semiconductors
TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
I F - Forward Current (mA)
1000
T j = 125 °C
100
- 40 °C
10
1
25 °C
0.1
0.01
0
0.2
18867
1.2
0.4 0.6 0.8
1
VF - Forward Voltage (V)
1.4
Fig. 1 - Typical Forward Voltage Forward Current
vs. Various Temperatures
1000
I R - Reverse Current (µA)
T j = 125 °C
100
100 °C
75 °C
10
50 °C
1
25 °C
0.1
0.01
0
5
18869
10
15
20
25
VR - Reverse Voltage (V)
30
Fig. 2 - Typical Variation of Reverse Current
vs. Various Temperatures
C D - Typical Capacitance (pF)
14
12
10
8
6
4
2
0
0
18868
4
12
16
20
24
8
VR - Reverse Voltage (V)
28
Fig. 3 - Typical Capacitance vs.
Reverse Applied Voltage VR
Rev. 1.2, 18-Nov-15
Document Number: 82394
2
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BAT54-02V-V-G
www.vishay.com
Vishay Semiconductors
0.7 (0.028)
1.7 (0.067)
0.9 (0.035)
1.5 (0.059)
0.7 (0.028)
0.5 (0.020)
0.1 (0.004) max.
0.08 (0.003)
0.20 (0.008)
PACKAGE DIMENSIONS in millimeters (inches): SOD-523
1.3 (0.051)
1.1 (0.043)
0.4 (0.016)
0.35 (0.014)
0.18 (0.007)
foot print recommendation:
1.45 (0.057)
Document no.: S8-V-3880.02-001 (4)
Rev. h - Date: 13. Oct. 2010
0.35 (0.014)
16864
Rev. 1.2, 18-Nov-15
Document Number: 82394
3
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 02-Oct-12
1
Document Number: 91000
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