Data Sheet

DISCRETE SEMICONDUCTORS
DATA SHEET
dbook, halfpage
M3D087
BZV90 series
Voltage regulator diodes
Product data sheet
Supersedes data of 1996 Oct 25
1999 May 17
NXP Semiconductors
Product data sheet
Voltage regulator diodes
FEATURES
BZV90 series
PINNING
• Total power dissipation:
max. 1 500 mW
• Tolerance series: approx. ±5%
• Working voltage range:
nom. 2.4 to 75 V (E24 range)
PIN
1
2, 4
3
DESCRIPTION
anode
cathode
anode
• Non-repetitive peak reverse power
dissipation: max. 40 W.
4
handbook, halfpage
APPLICATIONS
• General regulation functions.
3
1
DESCRIPTION
Medium-power voltage regulator
diodes in SOT223 plastic SMD
packages.
The diodes are available in the
normalized E24 approx. ±5%
tolerance range. The series consists
of 37 types with nominal working
voltages from 2.4 to 75 V
(BZV90-C2V4 to C75).
2, 4
1
2
3
Top view
MAM242
Fig.1 Simplified outline (SOT223) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
−
IF
continuous forward current
IZSM
non-repetitive peak reverse current
tp = 100 μs; square wave;
Tj = 25 °C prior to surge
see Table
“Per type”
Ptot
total power dissipation
Tamb = 25 °C; note 1
PZSM
non-repetitive peak reverse power
dissipation
tp = 100 μs; square wave;
Tj = 25 °C prior to surge; see Fig.2
Tstg
Tj
MAX.
UNIT
400
mA
−
1 500
mW
−
40
W
storage temperature
−65
+150
°C
junction temperature
−
150
°C
Note
1. Device mounted on an FR4 double-sided copper-clad printed circuit-board; copper area = 2 cm2.
ELECTRICAL CHARACTERISTICS
Total series
Tj = 25 °C unless otherwise specified.
SYMBOL
VF
1999 May 17
PARAMETER
forward voltage
CONDITIONS
IF = 50 mA; see Fig.3
2
MIN.
MAX.
UNIT
−
1.0
V
DIFFERENTIAL
RESISTANCE
rdif (Ω)
at IZtest
TEMP. COEFF.
SZ (mV/K)
at IZtest
see Figs 4 and 5
TEST
CURRENT
IZtest (mA)
DIODE CAP.
Cd (pF)
at f = 1 MHz;
at VR = 0 V
REVERSE
CURRENT at
REVERSE
VOLTAGE
IR (μA)
NON-REPETITIVE PEAK
REVERSE CURRENT
IZSM (A)
at tp = 100 μs;
Tamb = 25 °C
3
450
50
1.0
6.0
5
450
20
1.0
6.0
0
5
450
10
1.0
6.0
0
5
450
5
1.0
6.0
−2.4
0
5
450
5
1.0
6.0
−3.5
−2.5
0
5
450
3
1.0
6.0
90
−3.5
−2.5
0
5
450
3
1.0
6.0
80
−3.5
−1.4
0.2
5
300
3
2.0
6.0
40
60
−2.7
−0.8
1.2
5
300
2
2.0
6.0
6.0
15
40
−2.0
1.2
2.5
5
300
1
2.0
6.0
6.6
6
10
0.4
2.3
3.7
5
200
3
4.0
6.0
6.4
7.2
6
15
1.2
3.0
4.5
5
200
2
4.0
6.0
7V5
7.0
7.9
6
15
2.5
4.0
5.3
5
150
1
5.0
4.0
8V2
7.7
8.7
6
15
3.2
4.6
6.2
5
150
0.7
5.0
4.0
9V1
8.5
9.6
6
15
3.8
5.5
7.0
5
150
0.5
6.0
3.0
10
9.4
10.6
8
20
4.5
6.4
8.0
5
90
0.2
7.0
3.0
11
10.4
11.6
10
20
5.4
7.4
9.0
5
85
0.1
8.0
2.5
12
11.4
12.7
10
25
6.0
8.4
10.0
5
85
0.1
8.0
2.5
13
12.4
14.1
10
30
7.0
9.4
11.0
5
80
0.1
8.0
2.5
15
13.8
15.6
10
30
9.2
11.4
13.0
5
75
0.05
10.5
2.0
16
15.3
17.1
10
40
10.4
12.4
14.0
5
75
0.05
11.2
1.5
18
16.8
19.1
10
45
12.4
14.4
16.0
5
70
0.05
12.6
1.5
20
18.8
21.2
15
55
14.4
16.4
18.0
5
60
0.05
14.0
1.5
TYP.
MAX.
MIN.
TYP. MAX.
MAX.
2V4
2.2
2.6
70
100
−3.5
−1.6
0
5
2V7
2.5
2.9
75
100
−3.5
−2.0
0
3V0
2.8
3.2
80
95
−3.5
−2.1
3V3
3.1
3.5
85
95
−3.5
−2.4
3V6
3.4
3.8
85
90
−3.5
3V9
3.7
4.1
85
90
4V3
4.0
4.6
80
4V7
4.4
5.0
50
5V1
4.8
5.4
5V6
5.2
6V2
5.8
6V8
MAX.
Product data sheet
VR
(V)
MAX.
BZV90 series
MAX.
MIN.
NXP Semiconductors
BZV90CXXX
WORKING
VOLTAGE
VZ (V)
at IZtest
Voltage regulator diodes
1999 May 17
Per type
Tj = 25 °C unless otherwise specified.
TEMP. COEFF.
SZ (mV/K)
at IZtest
see Figs 4 and 5
TEST
CURRENT
IZtest (mA)
DIODE CAP.
Cd (pF)
at f = 1 MHz;
at VR = 0 V
REVERSE
CURRENT at
REVERSE
VOLTAGE
IR (μA)
NON-REPETITIVE PEAK
REVERSE CURRENT
IZSM (A)
at tp = 100 μs;
Tamb = 25 °C
4
MAX.
MAX.
VR
(V)
5
60
0.05
15.4
1.25
22.0
5
55
0.05
16.8
1.25
25.3
2
50
0.05
18.9
1.0
26.6
29.4
2
50
0.05
21.0
1.0
27.4
29.7
33.4
2
45
0.05
23.1
0.9
30.4
33.0
37.4
2
45
0.05
25.2
0.8
130
33.4
36.4
41.2
2
45
0.05
27.3
0.7
45
150
37.6
41.2
46.6
2
40
0.05
30.1
0.6
50
170
42.0
46.1
51.8
2
40
0.05
32.9
0.5
54.0
60
180
46.6
51.0
57.2
2
40
0.05
35.7
0.4
52.0
60.0
70
200
52.2
57.0
63.8
2
40
0.05
39.2
0.3
58.0
66.0
80
215
58.8
64.4
71.6
2
35
0.05
43.4
0.3
68
64.0
72.0
90
240
65.6
71.7
79.8
2
35
0.05
47.6
0.25
75
70.0
79.0
95
255
73.4
80.2
88.6
2
35
0.05
52.5
0.2
MIN.
MAX.
TYP.
MAX.
MIN.
TYP. MAX.
22
20.8
23.3
20
55
16.4
18.4
20.0
24
22.8
25.6
25
70
18.4
20.4
27
25.0
28.9
25
80
21.4
23.4
30
28.0
32.0
30
80
24.4
33
31.0
35.0
35
80
36
34.0
38.0
35
90
39
37.0
41.0
40
43
40.0
46.0
47
44.0
50.0
51
48.0
56
62
MAX.
NXP Semiconductors
DIFFERENTIAL
RESISTANCE
rdif (Ω)
at IZtest
Voltage regulator diodes
1999 May 17
BZV90CXXX
WORKING
VOLTAGE
VZ (V)
at IZtest
Product data sheet
BZV90 series
NXP Semiconductors
Product data sheet
Voltage regulator diodes
BZV90 series
THERMAL CHARACTERISTICS
SYMBOL
Rth j-a
PARAMETER
CONDITIONS
thermal resistance from junction to ambient
VALUE
UNIT
83.3
K/W
lead length max.; note 1
Note
1. Device mounted on an FR4 double-sided copper-clad printed circuit-board; copper area = 2 cm2.
GRAPHICAL DATA
MBG781
MBG801
103
handbook, halfpage
300
handbook, halfpage
PZSM
(W)
IF
(mA)
102
200
(1)
100
10
(2)
1
10−1
1
duration (ms)
0
0.6
10
(1) Tj = 25 °C (prior to surge).
(2) Tj = 150 °C (prior to surge).
Tj = 25 °C.
Fig.2
Fig.3
Maximum permissible non-repetitive peak
reverse power dissipation versus duration.
1999 May 17
5
0.8
VF (V)
1
Forward current as a function of forward
voltage; typical values.
NXP Semiconductors
Product data sheet
Voltage regulator diodes
BZV90 series
MBG927
1
handbook, full pagewidth
4V3
SZ
(mV/K)
3V9
3V6
0
3V3
−1
3V0
−2
2V7
2V4
−3
10-3
10-2
10-1
IZ (A)
BZV90-C2V4 to C4V3.
Tj = 25 to 150 °C.
Fig.4 Temperature coefficient as a function of working current; typical values.
MBG924
10
handbook, halfpage
SZ
(mV/K)
10
9V1
5
8V2
7V5
6V8
6V2
5V6
5V1
0
4V7
−5
0
4
8
12
16
IZ (mA)
20
BZV90-C4V7 to C10.
Tj = 25 to 150 °C.
Fig.5
Temperature coefficient as a function of
working current; typical values.
1999 May 17
6
1
NXP Semiconductors
Product data sheet
Voltage regulator diodes
BZV90 series
PACKAGE OUTLINE
Plastic surface mounted package; collector pad for good heat transfer; 4 leads
D
SOT223
E
B
A
X
c
y
HE
v M A
b1
4
Q
A
A1
1
2
3
Lp
bp
e1
w M B
detail X
e
0
2
4 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
bp
b1
c
D
E
e
e1
HE
Lp
Q
v
w
y
mm
1.8
1.5
0.10
0.01
0.80
0.60
3.1
2.9
0.32
0.22
6.7
6.3
3.7
3.3
4.6
2.3
7.3
6.7
1.1
0.7
0.95
0.85
0.2
0.1
0.1
OUTLINE
VERSION
SOT223
1999 May 17
REFERENCES
IEC
JEDEC
EIAJ
SC-73
7
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
99-09-13
NXP Semiconductors
Product data sheet
Voltage regulator diodes
BZV90 series
DATA SHEET STATUS
DOCUMENT
STATUS(1)
PRODUCT
STATUS(2)
DEFINITION
Objective data sheet
Development
This document contains data from the objective specification for product
development.
Preliminary data sheet
Qualification
This document contains data from the preliminary specification.
Product data sheet
Production
This document contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
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document is not implied. Exposure to limiting values for
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Limiting values ⎯ Stress above one or more limiting
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System of IEC 60134) may cause permanent damage to
the device. Limiting values are stress ratings only and
operation of the device at these or any other conditions
above those given in the Characteristics sections of this
1999 May 17
8
NXP Semiconductors
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal
definitions and disclaimers. No changes were made to the technical content, except for package outline
drawings which were updated to the latest version.
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Printed in The Netherlands
115002/00/03/pp9
Date of release: 1999 May 17
Document order number: 9397 750 05928
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