BC846

BC846 ... BC850
BC846 ... BC850
IC
= 100 mA
hFE = 180/290/520
Tjmax = 150°C
SMD General Purpose NPN Transistors
SMD Universal-NPN-Transistoren
VCEO = 30...65 V
Ptot = 250 mW
Version 2016-02-02
Typical Applications
Signal processing,
Switching, Amplification
Commercial grade 1
+0.1
1.1 -0.2
2.9 ±0.1
0.4+0.1
-0.05
Type
Code
2
1.9
RoHS
Pb
Mechanische Daten 1)
Taped and reeled
2=E
Besonderheiten
Universell anwendbar
Drei Stromverstärkungsklassen
Konform zu RoHS, REACH,
Konfliktmineralien 1
Mechanical Data 1)
±0.1
1=B
Features
General Purpose
Three current gain groups
Compliant to RoHS, REACH,
Conflict Minerals 1)
EE
WE
1
1.3±0.1
2.4 ±0.2
3
Typische Anwendungen
Signalverarbeitung,
Schalten, Verstärken
Standardausführung 1)
EL
V
~ SOT-23 (TO-236)
3=C
Dimensions - Maße [mm]
3000 / 7“
Weight approx.
Gegurtet auf Rolle
0.01 g
Gewicht ca.
Case material
UL 94V-0
Gehäusematerial
Solder & assembly conditions
260°C/10s
Löt- und Einbaubedingungen
MSL = 1
Maximum ratings (TA = 25°C)
Grenzwerte (TA = 25°C)
BC846
BC847
BC850
BC848
BC849
Collector-Emitter-volt. – Kollektor-Emitter-Spannung
B open
VCEO
65 V
45 V
45 V
30 V
Collector-Base-voltage – Kollektor-Basis-Spannung
E open
VCBO
80 V
50 V
50 V
30 V
Emitter-Base-voltage – Emitter-Basis-Spannung
C open
VEBO
6V
5V
2
Power dissipation – Verlustleistung
Ptot
250 mW )
Collector current – Kollektorstrom (dc)
IC
100 mA
Peak Collector current – Kollektor-Spitzenstrom
ICM
200 mA
Junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
Tj
TS
-55...+150°C
-55…+150°C
Characteristics (Tj = 25°C)
Kennwerte (Tj = 25°C)
Min.
Typ.
Max.
DC current gain – Kollektor-Basis-Stromverhältnis
1
2
VCE = 5 V, IC = 10 µA
Group A
Group B
Group C
hFE
hFE
hFE
–
–
–
90
150
270
–
–
–
VCE = 5 V, IC = 2 mA
Group A
Group B
Group C
hFE
hFE
hFE
110
200
420
180
290
520
220
450
800
Please note the detailed information on our website or at the beginning of the data book
Bitte beachten Sie die detaillierten Hinweise auf unserer Internetseite bzw. am Anfang des Datenbuches
Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss
© Diotec Semiconductor AG
http://www.diotec.com/
1
BC846 ... BC850
Characteristics (Tj = 25°C)
Kennwerte (Tj = 25°C)
Min.
Typ.
Max.
VCEsat
VCEsat
–
–
90 mV
200 mV
250 mV
600 mV
VBEsat
VBEsat
–
–
700 mV
900 mV
–
–
VBE
VBE
580 mV
–
660 mV
–
700 mV
720 mV
ICBO
ICBO
–
–
–
–
15 nA
5 µA
IEBO
–
–
100 nA
fT
–
300 MHz
–
CCBO
–
3.5 pF
6 pF
CEBO
–
9 pF
–
1
Collector-Emitter saturation voltage – Kollektor-Sättigungsspannung )
IC = 10 mA, IB = 0.5 mA
IC = 100 mA, IB = 5 mA
Base-Emitter saturation voltage – Basis-Sättigungsspannung 2)
IC = 10 mA, IB = 0.5 mA
IC = 100 mA, IB = 5 mA
Base-Emitter-voltage – Basis-Emitter-Spannung 2)
VCE = 5 V, IC = 2 mA
VCE = 5 V, IC = 10 mA
Collector-Base cutoff current – Kollektor-Basis-Reststrom
VCB = 30 V, (E open)
VCE = 30 V, Tj = 125°C, (E open)
Emitter-Base cutoff current
VEB = 5 V, (C open)
Gain-Bandwidth Product – Transitfrequenz
VCE = 5 V, IC = 10 mA, f = 100 MHz
Collector-Base Capacitance – Kollektor-Basis-Kapazität
VCB = 10 V, IE =ie = 0, f = 1 MHz
Emitter-Base Capacitance – Emitter-Basis-Kapazität
VEB = 0.5 V, IC = ic = 0, f = 1 MHz
Thermal resistance junction to ambient air
Wärmewiderstand Sperrschicht – umgebende Luft
RthA
< 420 K/W 2)
Recommended complementary PNP transistors
Empfohlene komplementäre PNP-Transistoren
BC856 ... BC860
Marking of available current gain groups
Stempelung der lieferbaren Stromverstärkungsgruppen
BC846A = 1A
BC846B = 1B
BC846C = 1C
BC847A = 1E
BC847B = 1F
BC847C = 1G
BC848A = 1E
BC848B = 1F
BC848C = 1G
BC850A = 1E
BC850B = 1F
BC850C = 1G
BC849A = 1E
BC849B = 1F
BC849C = 1G
Disclaimer: See data book page 2 or website
Haftungssauschluss: Siehe Datenbuch Seite 2 oder Internet
1
2
2
Tested with pulses tp = 300 µs, duty cycle ≤ 2%
Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2%
Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss
http://www.diotec.com/
© Diotec Semiconductor AG
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