ETC HGT1S1N120BNDS9A

HGTP1N120BND, HGT1S1N120BNDS
Data Sheet
January 2000
5.3A, 1200V, NPT Series N-Channel IGBT
with Anti-Parallel Hyperfast Diode
The HGTP1N120BND and the HGT1S1N120BNDS are
Non-Punch Through (NPT) IGBT designs. They are new
members of the MOS gated high voltage switching IGBT
family. IGBTs combine the best features of MOSFETs and
bipolar transistors. This device has the high input impedance
of a MOSFET and the low on-state conduction loss of a
bipolar transistor.
The IGBT is development type number TA49316. The diode
used in anti-parallel with the IGBT is the RHRD4120
(TA49056).
The IGBT is ideal for many high voltage switching
applications operating at moderate frequencies where low
conduction losses are essential, such as: AC and DC motor
controls, power supplies and drivers for solenoids, relays
and contactors.
File Number
4650.2
Features
• 5.3A, 1200V, TC = 25oC
• 1200V Switching SOA Capability
• Typical EOFF. . . . . . . . . . . . . . . . . . . 120µJ at TJ = 150oC
• Short Circuit Rating
• Low Conduction Loss
• Temperature Compensating SABER™ Model
Thermal Impedance SPICE Model www.intersil.com/
• Related Literature
- TB334, “Guidelines for Soldering Surface Mount
Components to PC Boards”
Packaging
JEDEC TO-220AB
E
C
G
Formerly Developmental Type TA49314.
COLLECTOR
Ordering Information
PART NUMBER
(FLANGE)
PACKAGE
BRAND
HGTP1N120BND
TO-220AB
1N120BND
HGT1S1N120BNDS
TO-263AB
1N120BND
NOTE: When ordering, use the entire part number. Add the suffix 9A
to obtain the TO-263AB in tape and reel, i.e. HGT1S1N120BNDS9A.
JEDEC TO-263AB
Symbol
COLLECTOR
(FLANGE)
C
G
E
G
E
INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,598,461
4,682,195
4,803,533
4,888,627
4,417,385
4,605,948
4,684,413
4,809,045
4,890,143
4,430,792
4,620,211
4,694,313
4,809,047
4,901,127
1
4,443,931
4,631,564
4,717,679
4,810,665
4,904,609
4,466,176
4,639,754
4,743,952
4,823,176
4,933,740
4,516,143
4,639,762
4,783,690
4,837,606
4,963,951
4,532,534
4,641,162
4,794,432
4,860,080
4,969,027
4,587,713
4,644,637
4,801,986
4,883,767
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 2000
SABER™ is a trademark of Analogy, Inc.
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HGTP1N120BND, HGT1S1N120BNDS
Absolute Maximum Ratings
TC = 25oC, Unless Otherwise Specified
Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVCES
Collector Current Continuous
At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25
At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110
Average Rectified Forward Current at TC = 148oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . IF(AV)
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM
Switching Safe Operating Area at TJ = 150oC (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . SSOA
Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
Maximum Lead Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Package Body for 10s, see Tech Brief 334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .Tpkg
Short Circuit Withstand Time (Note 2) at VGE = 15V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .tSC
Short Circuit Withstand Time (Note 2) at VGE = 13V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .tSC
ALL TYPES
UNITS
1200
V
5.3
2.7
4
6
±20
±30
6A at 1200V
60
0.476
-55 to 150
A
A
A
A
V
V
W
W/oC
oC
300
260
8
oC
13
µs
oC
µs
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
1. Single Pulse; VGE = 15V; Pulse width limited by maximum junction temperature.
2. VCE(PK) = 840V, TJ = 125oC, RG = 82Ω.
TC = 25oC, Unless Otherwise Specified
Electrical Specifications
PARAMETER
SYMBOL
Collector to Emitter Breakdown Voltage
Collector to Emitter Leakage Current
Collector to Emitter Saturation Voltage
Gate to Emitter Threshold Voltage
BVCES
ICES
VCE(SAT)
IC = 250µA, VGE = 0V
VCE = BVCES
IC = 1.0A
VGE = 15V
MIN
TYP
MAX
UNITS
1200
-
-
V
TC = 25oC
-
-
250
µA
TC = 125oC
-
20
-
µA
TC = 150oC
-
-
1.0
mA
TC = 25oC
-
2.5
2.9
V
TC = 150oC
-
3.8
4.3
V
6.0
7.1
-
V
Gate to Emitter Leakage Current
IGES
VGE = ±20V
-
-
±250
nA
Switching SOA
SSOA
TJ = 150oC, RG = 82Ω, VGE = 15V,
L = 2mH, VCE(PK) = 1200V
6
-
-
A
VGEP
Gate to Emitter Plateau Voltage
VGE(TH)
TEST CONDITIONS
IC = 50µA, VCE = VGE
IC = 1.0A, VCE = 0.5 BVCES
-
9.2
-
V
On-State Gate Charge
QG(ON)
IC = 1.0A,
VCE = 0.5 BVCES
-
14
20
nC
Current Turn-On Delay Time
td(ON)I
IGBT and Diode at TJ = 25oC
ICE = 1.0A
VCE = 0.8 BVCES
VGE = 15V
RG = 82Ω
L = 4mH
Test Circuit (Figure 20)
Current Rise Time
trI
Current Turn-Off Delay Time
td(OFF)I
Current Fall Time
tfI
Turn-On Energy
EON
Turn-Off Energy (Note 3)
EOFF
2
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VGE = 15V
VGE = 20V
-
15
21
nC
-
15
20
ns
-
11
14
ns
-
67
76
ns
-
226
300
ns
-
172
187
J
-
90
123
J
HGTP1N120BND, HGT1S1N120BNDS
TC = 25oC, Unless Otherwise Specified (Continued)
Electrical Specifications
PARAMETER
SYMBOL
Current Turn-On Delay Time
td(ON)I
Current Rise Time
trI
Current Turn-Off Delay Time
td(OFF)I
Current Fall Time
tfI
Turn-On Energy
EON
Turn-Off Energy (Note 3)
EOFF
Diode Forward Voltage
VEC
Diode Reverse Recovery Time
trr
Thermal Resistance Junction To Case
RθJC
TEST CONDITIONS
IGBT and Diode at TJ = 150oC
ICE = 1.0A
VCE = 0.8 BVCES
VGE = 15V
RG = 82Ω
MIN
TYP
MAX
UNITS
-
13
17
ns
-
11
15
ns
-
75
88
ns
-
258
370
ns
-
385
440
J
-
120
175
J
IEC = 1.0A
-
1.3
1.8
V
IEC = 1.0A, dIEC/dt = 200A/µs
-
-
50
ns
IGBT
-
-
2.1
oC/W
Diode
-
-
3
oC/W
L = 4mH
Test Circuit (Figure 20)
NOTE:
3. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and
ending at the point where the collector current equals zero (ICE = 0A). All devices were tested per JEDEC Standard No. 24-1 Method for
Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss. Turn-on losses
include losses due to diode recovery.
Unless Otherwise Specified
VGE = 15V
5
4
3
2
1
0
25
50
75
100
125
150
7
TJ = 150oC, RG = 82Ω, VGE = 15V, L = 2mH
6
5
4
3
2
1
0
0
TC , CASE TEMPERATURE (oC)
TJ = 150oC, RG = 82Ω, L = 4mH, VCE = 960V
100
10
TC
75oC
75oC
110oC
110oC
VGE
15V
13V
15V
13V
fMAX1 = 0.05 / (td(OFF)I + td(ON)I)
fMAX2 = (PD - PC) / (EON + EOFF)
PC = CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
RØJC = 2.1oC/W, SEE NOTES
5
0.5
1.0
600
800
1000
1200
1400
FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA
2.0
3.0
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO
EMITTER CURRENT
3
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tSC , SHORT CIRCUIT WITHSTAND TIME (µs)
fMAX , OPERATING FREQUENCY (kHz)
200
400
VCE , COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 1. DC COLLECTOR CURRENT vs CASE
TEMPERATURE
300
200
20
20
VCE = 840V, RG = 82, TJ = 125oC
18
18
tSC
16
16
14
14
ISC
12
10
13
13.5
12
14
14.5
10
15
VGE , GATE TO EMITTER VOLTAGE (V)
FIGURE 4. SHORT CIRCUIT WITHSTAND TIME
ISC, PEAK SHORT CIRCUIT CURRENT (A)
ICE , DC COLLECTOR CURRENT (A)
6
ICE, COLLECTOR TO EMITTER CURRENT (A)
Typical Performance Curves
HGTP1N120BND, HGT1S1N120BNDS
Unless Otherwise Specified (Continued)
ICE, COLLECTOR TO EMITTER CURRENT (A)
ICE, COLLECTOR TO EMITTER CURRENT (A)
Typical Performance Curves
6
TC = 25oC
5
4
TC = -55oC
TC = 150oC
3
2
1
0
PULSE DURATION = 250µs
DUTY CYCLE < 0.5%, VGE = 13V
0
2
4
6
8
10
6
5
TC = 25oC
4
2
1
PULSE DURATION = 250µs
DUTY CYCLE < 0.5%, VGE = 15V
0
0
2
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
6
8
10
FIGURE 6. COLLECTOR TO EMITTER ON-STATE VOLTAGE
1200
250
RG = 82Ω, L = 4mH, VCE = 960V
1000
EOFF, TURN-OFF ENERGY LOSS (µJ)
EON , TURN-ON ENERGY LOSS (µJ)
4
VCE , COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 5. COLLECTOR TO EMITTER ON-STATE VOLTAGE
TJ = 150oC, VGE = 13V
TJ = 150oC, VGE = 15V
800
600
400
200
TJ = 25oC, VGE = 13V
TJ = 25oC, VGE = 15V
0
0.5
1
1.5
2
2.5
RG = 82Ω, L = 4mH, VCE = 960V
200
TJ = 150oC, VGE = 13V OR 15V
150
TJ = 25oC, VGE = 13V OR 15V
100
50
0
0.5
3
ICE , COLLECTOR TO EMITTER CURRENT (A)
1
1.5
2
2.5
3
ICE , COLLECTOR TO EMITTER CURRENT (A)
FIGURE 7. TURN-ON ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
FIGURE 8. TURN-OFF ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
24
28
RG = 82Ω, L = 4mH, VCE = 960V
RG = 82Ω, L = 4mH, VCE = 960V
24
20
16
TJ
trI , RISE TIME (ns)
td(ON)I , TURN-ON DELAY TIME (ns)
TC = 150oC
TC = -55oC
3
VGE
25oC
150oC
13V
13V
25oC 15V
150oC 15V
12
8
0
1
1.5
2
2.5
ICE , COLLECTOR TO EMITTER CURRENT (A)
FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
4
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20
TJ = 25oC, TJ = 150oC, VGE = 13V
16
12
TJ = 25oC, TJ = 150oC, VGE = 15V
8
3
4
0.5
1
1.5
2
2.5
ICE , COLLECTOR TO EMITTER CURRENT (A)
FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO
EMITTER CURRENT
3
HGTP1N120BND, HGT1S1N120BNDS
84
Unless Otherwise Specified (Continued)
360
RG = 82Ω, L = 4mH, VCE = 960V
80
76
72
TJ = 150oC, VGE = 13V
TJ = 25oC, VGE = 15V
68
TJ = 25oC, VGE = 13V
64
280
200
0.5
1
1.5
2
2.5
VGE , GATE TO EMITTER VOLTAGE (V)
ICE , COLLECTOR TO EMITTER CURRENT (A)
10
8
TC = 25oC
6
TC = 150oC
4
2
0
7
8
9
11
10
12
13
14
9
6
3
IG(REF) = 1mA, RL = 600Ω, TC = 25oC
0
0
4
250
200
150
100
COES
50
CRES
VCE , COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 15. CAPACITANCE vs COLLECTOR TO EMITTER
VOLTAGE
5
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25
ICE , COLLECTOR TO EMITTER CURRENT (A)
C, CAPACITANCE (pF)
CIES
20
12
16
20
FIGURE 14. GATE CHARGE WAVEFORMS
300
15
8
QG , GATE CHARGE (nC)
FREQUENCY = 1MHz
10
VCE = 1200V
VCE = 400V
15
350
5
3
12
FIGURE 13. TRANSFER CHARACTERISTIC
0
2.5
VCE = 800V
VGE , GATE TO EMITTER VOLTAGE (V)
0
2
15
TC = -55oC
12
1.5
FIGURE 12. TURN-OFF FALL TIME vs COLLECTOR TO
EMITTER CURRENT
DUTY CYCLE < 0.5%, VCE = 20V
PULSE DURATION = 250µs
14
1
ICE , COLLECTOR TO EMITTER CURRENT (A)
FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
16
TJ = 25oC, VGE = 13V OR 15V
120
0.5
3
ICE , COLLECTOR TO EMITTER CURRENT (A)
18
TJ = 150oC, VGE = 13V OR 15V
240
160
60
56
RG = 82Ω, L = 4mH, VCE = 960V
320
TJ = 150oC, VGE = 15V
tfI , FALL TIME (ns)
td(OFF)I , TURN-OFF DELAY TIME (ns)
Typical Performance Curves
6
PULSE DURATION = 250µs
DUTY CYCLE < 0.5%, TC = 110oC
5
VGE = 15V
4
VGE = 12V
3
VGE = 10V
2
1
0
0
2
4
6
8
10
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 16. COLLECTOR TO EMITTER ON-STATE VOLTAGE
HGTP1N120BND, HGT1S1N120BNDS
ZθJC , NORMALIZED THERMAL RESPONSE
Typical Performance Curves
Unless Otherwise Specified (Continued)
2.0
1.0
0.5
0.2
0.1
0.1
0.05
t1
0.02
0.01
PD
t2
SINGLE PULSE
DUTY
DUTY FACTOR,
FACTOR, D
D == tt11 // tt22
PEAK
PEAK TTJJ == (P
(PD
X ZZθJC
XR
RθJC
TC
DX
θJC X
θJC)) ++ T
C
0.01
0.005
10-5
10-4
10-3
10-2
10-1
100
t1 , RECTANGULAR PULSE DURATION (s)
FIGURE 17. NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE
5
70
t, RECOVERY TIMES (ns)
IEC , FORWARD CURRENT (A)
TC = 25oC, dIEC/dt = 200A/µs
60
2
TC = 150oC
TC = -55oC
1
0.5
TC = 25oC
0.2
50
trr
40
30
ta
20
tb
10
0.1
0
0.4
0.8
1.2
1.6
2.0
0
0.5
1
2
3
4
5
IEC , FORWARD CURRENT (A)
VEC , FORWARD VOLTAGE (V)
FIGURE 18. DIODE FORWARD CURRENT vs FORWARD
VOLTAGE DROP
FIGURE 19. RECOVERY TIMES vs FORWARD CURRENT
Test Circuit and Waveforms
VGE
90%
L = 4mH
10%
RHRD4120
EON
EOFF
RG = 82Ω
ICE
ICE
90%
+
-
VDD = 960V
VCE
10%
tfI
td(ON)I
trI
td(OFF)I
FIGURE 20. INDUCTIVE SWITCHING TEST CIRCUIT
6
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FIGURE 21. SWITCHING TEST WAVEFORMS
HGTP1N120BND, HGT1S1N120BNDS
Handling Precautions for IGBTs
Operating Frequency Information
Insulated Gate Bipolar Transistors are susceptible to
gate-insulation damage by the electrostatic discharge of
energy through the devices. When handling these devices,
care should be exercised to assure that the static charge
built in the handler’s body capacitance is not discharged
through the device. With proper handling and application
procedures, however, IGBTs are currently being extensively
used in production by numerous equipment manufacturers in
military, industrial and consumer applications, with virtually
no damage problems due to electrostatic discharge. IGBTs
can be handled safely if the following basic precautions are
taken:
Operating frequency information for a typical device
(Figure 3) is presented as a guide for estimating device
performance for a specific application. Other typical
frequency vs collector current (ICE) plots are possible using
the information shown for a typical unit in Figures 6, 7, 8, 9
and 11. The operating frequency plot (Figure 3) of a typical
device shows fMAX1 or fMAX2 ; whichever is smaller at each
point. The information is based on measurements of a
typical device and is bounded by the maximum rated
junction temperature.
1. Prior to assembly into a circuit, all leads should be kept
shorted together either by the use of metal shorting
springs or by the insertion into conductive material such
as “ECCOSORBD™ LD26” or equivalent.
2. When devices are removed by hand from their carriers,
the hand being used should be grounded by any suitable
means - for example, with a metallic wristband.
3. Tips of soldering irons should be grounded.
4. Devices should never be inserted into or removed from
circuits with power on.
5. Gate Voltage Rating - Never exceed the gate-voltage
rating of VGEM . Exceeding the rated VGE can result in
permanent damage to the oxide layer in the gate region.
6. Gate Termination - The gates of these devices are
essentially capacitors. Circuits that leave the gate
open-circuited or floating should be avoided. These
conditions can result in turn-on of the device due to
voltage buildup on the input capacitor due to leakage
currents or pickup.
fMAX1 is defined by fMAX1 = 0.05/(td(OFF)I+ td(ON)I).
Deadtime (the denominator) has been arbitrarily held to 10%
of the on-state time for a 50% duty factor. Other definitions
are possible. td(OFF)I and td(ON)I are defined in Figure 21.
Device turn-off delay can establish an additional frequency
limiting condition for an application other than TJM. td(OFF)I
is important when controlling output ripple under a lightly
loaded condition.
fMAX2 is defined by fMAX2 = (PD - PC)/(EOFF + EON). The
allowable dissipation (PD) is defined by PD = (TJM - TC)/RθJC.
The sum of device switching and conduction losses must
not exceed PD. A 50% duty factor was used (Figure 3) and
the conduction losses (PC) are approximated by
PC = (VCE x ICE)/2.
EON and EOFF are defined in the switching waveforms
shown in Figure 21. EON is the integral of the instantaneous
power loss (ICE x VCE) during turn-on and EOFF is the
integral of the instantaneous power loss (ICE x VCE) during
turn-off. All tail losses are included in the calculation for
EOFF; i.e., the collector current equals zero (ICE = 0).
7. Gate Protection - These devices do not have an internal
monolithic Zener diode from gate to emitter. If gate
protection is required an external Zener is recommended.
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site www.intersil.com
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