Si5858DU_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1]. When implemented in P-Spice, these values have matching characteristic curves to the Single Pulse Transient Thermal Impedance curves for the MOSFET. R-C values for the electrical circuit in the Foster/Tank and Cauer/Filter configurations are included. Note: For a detailed explanation of implementing these values in P-SPICE, refer to Application Note AN609 Thermal Simulations Of Power MOSFETs on P-SPICE Platform. R-C THERMAL MODEL FOR TANK CONFIGURATION R-C VALUES FOR TANK CONFIGURATION Thermal Resistance (°C/W) Junction to Ambient Mosfet Ambient Schottky Foot Case Mosfet Case Schottky RT1 29.1251 26.9641 N/A 13.4788 u 96.6719 m RT2 6.9670 7.9653 N/A 7.8166 9.2662 RT3 18.5814 21.9661 N/A 3.8770 2.5413 RT4 50.1265 52.8725 N/A 3.3831 3.9421 Thermal Capacitance (Joules/°C) Junction to Ambient Mosfet Ambient Schottky Foot Case Mosfet Case Schottky CT1 4.5843 m 1.5128 m N/A 3.3132 u 552.5485 n CT2 286.6328 u 183.5344 u N/A 2.6699 m 2.7325 m CT3 107.8828 m 26.6331 m N/A 164.1397 u 489.1996 u CT4 1.5756 1.3248 N/A 3.3130 m 40.4786 m This document is intended as a SPICE modeling guideline and does not constitute a commercial product data sheet. Designers should refer to the appropriate data sheet of the same number for guaranteed specification limits. Document Number: 74299 Revision: 27-Jun-07 www.vishay.com 1 Si5858DU_RC Vishay Siliconix R-C THERMAL MODEL FOR FILTER CONFIGURATION R-C VALUES FOR FILTER CONFIGURATION Thermal Resistance (°C/W) Ambient Schottky Foot Case Mosfet Case Schottky RF1 9.1736 13.6647 N/A 5.5864 4.3064 RF2 28.8808 26.4897 N/A 2.3591 9.1143 RF3 18.7405 18.1736 N/A 6.5605 1.9761 RF4 47.9965 51.4571 N/A 511.4712 m 609.0441 m Junction to Ambient Mosfet Ambient Schottky Foot Case Mosfet Case Schottky CF1 358.7743 u 236.2560 u N/A 174.6616 u 461.3789 u CF2 4.3863 m 1.7918 m N/A 1.8003 m 2.7165 m CF3 89.7908 m 37.0519 m N/A 183.9506 u 51.2715 m CF4 1.5299 1.3457 N/A 5.4784 m 1.3402 Junction to Ambient Mosfet Thermal Capacitance (Joules/°C) Note: NA indicates not applicable Reference: [1] "A Simple Method of Generating Thermal Models for a Power MOSFET" by Wharton McDaniel and Kandarp Pandya, IEEE / SEMITHERM 2002 www.vishay.com 2 Document Number: 74299 Revision: 27-Jun-07 Si5858DU_RC Vishay Siliconix Document Number: 74299 Revision: 27-Jun-07 www.vishay.com 3 Si5858DU_RC Vishay Siliconix www.vishay.com 4 Document Number: 74299 Revision: 27-Jun-07