Si3812DV-RC

Si3812DV_RC
Vishay Siliconix
R-C Thermal Model Parameters
DESCRIPTION
The parametric values in the R-C thermal model have
been derived using curve-fitting techniques. These
techniques are described in "A Simple Method of
Generating Thermal Models for a Power MOSFET"[1].
When implemented in P-Spice, these values have
matching characteristic curves to the Single Pulse
Transient Thermal Impedance curves for the
MOSFET.
R-C values for the electrical circuit in the Foster/Tank
and Cauer/Filter configurations are included.
Note:
For a detailed explanation of implementing these values in
P-SPICE, refer to Application Note AN609 Thermal Simulations Of
Power MOSFETs on P-SPICE Platform.
R-C THERMAL MODEL FOR TANK CONFIGURATION
R-C VALUES FOR TANK CONFIGURATION
Thermal Resistance (°C/W)
Junction to
Ambient Mosfet
Ambient Schottky
Case
Foot Mosfet
Foot Schottky
RT1
41.3839
50.5349
N/A
29.1228
29.3755
RT2
17.8424
18.1012
N/A
22.7539
22.6128
RT3
45.3883
46.3955
N/A
25.6195
32.7248
RT4
45.3854
49.9684
N/A
12.5038
10.2869
Thermal Capacitance (Joules/°C)
Junction to
Ambient Mosfet
Ambient Schottky
Case
Foot Mosfet
Foot Schottky
CT1
16.2326 m
11.8607 m
N/A
4.1372 m
2.9802 m
CT2
382.1978 u
309.9819 u
N/A
1.7457 m
1.4990 m
CT3
2.2476 m
1.9009 m
N/A
15.3997 m
13.5018 m
CT4
1.8854
1.7071
N/A
255.9679 u
216.5573 u
This document is intended as a SPICE modeling guideline and does not constitute a commercial product data sheet. Designers should refer to the appropriate data
sheet of the same number for guaranteed specification limits.
Document Number: 74667
Revision: 03-May-07
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Si3812DV_RC
Vishay Siliconix
R-C THERMAL MODEL FOR FILTER CONFIGURATION
R-C VALUES FOR FILTER CONFIGURATION
Thermal Resistance (°C/W)
Junction to
Ambient Mosfet
Ambient Schottky
Case
Foot Mosfet
Foot Schottky
RF1
22.8768
24.5444
N/A
19.6121
19.9249
RF2
52.3054
54.6038
N/A
49.1762
50.8226
RF3
29.9906
36.8954
N/A
10.9809
12.0196
RF4
44.8272
48.9564
N/A
10.2308
12.2329
Thermal Capacitance (Joules/°C)
Junction to
Ambient Mosfet
Ambient Schottky
Case
Foot Mosfet
Foot Schottky
CF1
297.9236 u
270.1590 u
N/A
217.3897 u
208.7151 u
CF2
1.7173 m
1.4336 m
N/A
1.2357 m
1.1098 m
CF3
18.6657 m
13.7160 m
N/A
13.1791 m
13.5935 m
CF4
1.8697
1.7442
N/A
3.6092 m
7.4595 m
Note: NA indicates not applicable
Reference:
[1] "A Simple Method of Generating Thermal Models for a Power MOSFET" by Wharton McDaniel and Kandarp Pandya, IEEE / SEMITHERM 2002
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Document Number: 74667
Revision: 03-May-07
Si3812DV_RC
Vishay Siliconix
Document Number: 74667
Revision: 03-May-07
www.vishay.com
3
Si3812DV_RC
Vishay Siliconix
www.vishay.com
4
Document Number: 74667
Revision: 03-May-07