Data Sheet

PESD3V3L1UA; PESD3V3L1UB;
PESD3V3L1UL
Low capacitance unidirectional ESD protection diodes
Rev. 01 — 17 June 2009
Product data sheet
1. Product profile
1.1 General description
Low capacitance unidirectional ElectroStatic Discharge (ESD) protection diodes in small
Surface-Mounted Device (SMD) plastic packages designed to protect one signal line from
the damage caused by ESD and other transients.
Table 1.
Product overview
Type number
Package
Package configuration
NXP
JEITA
PESD3V3L1UA
SOD323
SC-76
very small
PESD3V3L1UB
SOD523
SC-79
ultra small and flat lead
PESD3V3L1UL
SOD882
-
leadless ultra small
1.2 Features
n Unidirectional ESD protection of
one line
n Low diode capacitance: Cd = 34 pF
n Low clamping voltage: VCL = 11 V
n Very low leakage current: IRM = 100 nA
n ESD protection up to 30 kV
n IEC 61000-4-2; level 4 (ESD)
n AEC-Q101 qualified
1.3 Applications
n Computers and peripherals
n Audio and video equipment
n Cellular handsets and accessories
n Communication systems
n Subscriber Identity Module (SIM) card
protection
n Portable electronics
n FireWire
n High-speed data lines
1.4 Quick reference data
Table 2.
Quick reference data
Tamb = 25 °C unless otherwise specified.
Symbol
Parameter
VRWM
reverse standoff voltage
Cd
diode capacitance
Conditions
Min
Typ
Max
Unit
-
-
3.3
V
f = 1 MHz; VR = 0 V
-
34
40
pF
PESD3V3L1UA/UB/UL
NXP Semiconductors
Low capacitance unidirectional ESD protection diodes
2. Pinning information
Table 3.
Pinning
Pin
Description
Simplified outline
Graphic symbol
PESD3V3L1UA; PESD3V3L1UB
1
cathode
2
anode
[1]
1
2
1
2
006aaa152
001aab540
PESD3V3L1UL
1
cathode
2
anode
[1]
1
2
1
2
006aaa152
Transparent
top view
[1]
The marking bar indicates the cathode.
3. Ordering information
Table 4.
Ordering information
Type number
Package
Name
Description
Version
PESD3V3L1UA
SC-76
plastic surface-mounted package; 2 leads
SOD323
PESD3V3L1UB
SC-79
plastic surface-mounted package; 2 leads
SOD523
PESD3V3L1UL
-
leadless ultra small plastic package; 2 terminals;
body 1.0 × 0.6 × 0.5 mm
SOD882
4. Marking
Table 5.
Marking codes
Type number
Marking code
PESD3V3L1UA
1H
PESD3V3L1UB
Z7
PESD3V3L1UL
XW
PESD3V3L1UA_UB_UL_1
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 01 — 17 June 2009
2 of 13
PESD3V3L1UA/UB/UL
NXP Semiconductors
Low capacitance unidirectional ESD protection diodes
5. Limiting values
Table 6.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
peak pulse power
IPP
peak pulse current
Tj
junction temperature
Tamb
Tstg
PPP
Min
Max
Unit
tp = 8/20 µs
[1][2]
-
45
W
tp = 8/20 µs
[1][2]
-
4.5
A
-
150
°C
ambient temperature
−55
+150
°C
storage temperature
−65
+150
°C
[1]
Non-repetitive current pulse 8/20 µs exponential decay waveform according to IEC 61000-4-5.
[2]
Measured from pin 1 to pin 2.
Table 7.
ESD maximum ratings
Tamb = 25 °C unless otherwise specified.
Symbol
Parameter
Conditions
VESD
electrostatic discharge voltage
IEC 61000-4-2
(contact discharge)
[1]
Min
Max
Unit
-
30
kV
machine model
-
400
V
MIL-STD-883 (human
body model)
-
10
kV
Device stressed with ten non-repetitive ESD pulses.
Table 8.
ESD standards compliance
Standard
Conditions
IEC 61000-4-2; level 4 (ESD)
> 15 kV (air); > 8 kV (contact)
MIL-STD-883; class 3 (human body model)
> 4 kV
PESD3V3L1UA_UB_UL_1
Product data sheet
[1]
© NXP B.V. 2009. All rights reserved.
Rev. 01 — 17 June 2009
3 of 13
PESD3V3L1UA/UB/UL
NXP Semiconductors
Low capacitance unidirectional ESD protection diodes
001aaa631
IPP
001aaa630
120
100 %
90 %
100 % IPP; 8 µs
IPP
(%)
80
e−t
50 % IPP; 20 µs
40
10 %
0
10
20
30
30 ns
40
t (µs)
Fig 1.
t
tr = 0.7 ns to 1 ns
0
60 ns
8/20 µs pulse waveform according to
IEC 61000-4-5
Fig 2.
ESD pulse waveform according to
IEC 61000-4-2
6. Characteristics
Table 9.
Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol
Parameter
Conditions
Min
VRWM
reverse standoff voltage
IRM
-
-
3.3
V
reverse leakage current
VRWM = 3.3 V
-
100
300
nA
VBR
breakdown voltage
IR = 5 mA
5.3
5.6
6.0
V
Cd
diode capacitance
f = 1 MHz;
VR = 0 V
-
34
40
pF
VCL
clamping voltage
Max
Unit
IPP = 1 A
-
-
8
V
IPP = 4.5 A
-
-
11
V
[1][2]
rdif
differential resistance
IR = 5 mA
-
-
30
Ω
VF
forward voltage
IF = 200 mA
-
-
1.2
V
[1]
Non-repetitive current pulse 8/20 µs exponential decay waveform according to IEC 61000-4-5.
[2]
Measured from pin 1 to pin 2.
PESD3V3L1UA_UB_UL_1
Product data sheet
Typ
© NXP B.V. 2009. All rights reserved.
Rev. 01 — 17 June 2009
4 of 13
PESD3V3L1UA/UB/UL
NXP Semiconductors
Low capacitance unidirectional ESD protection diodes
I
006aab563
35
Cd
(pF)
30
−VCL −VBR −VRWM
25
V
−IRM
−IR
20
−
+
P-N
15
−IPP
10
0
1
2
3
4
5
VR (V)
006aaa407
f = 1 MHz; Tamb = 25 °C
Fig 3.
Diode capacitance as a function of reverse
voltage; typical values
Fig 4.
V-I characteristics for a unidirectional
ESD protection diode
PESD3V3L1UA_UB_UL_1
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 01 — 17 June 2009
5 of 13
PESD3V3L1UA/UB/UL
NXP Semiconductors
Low capacitance unidirectional ESD protection diodes
ESD TESTER
RZ
450 Ω
RG 223/U
50 Ω coax
4 GHz DIGITAL
OSCILLOSCOPE
10×
ATTENUATOR
50 Ω
CZ
IEC 61000-4-2 network
CZ = 150 pF; RZ = 330 Ω
DUT
(Device
Under
Test)
vertical scale = 10 A/div
horizontal scale = 15 ns/div
vertical scale = 6 V/div
horizontal scale = 100 ns/div
GND
GND
unclamped +8 kV ESD pulse waveform
(IEC 61000-4-2 network)
clamped +8 kV ESD pulse waveform
(IEC 61000-4-2 network)
vertical scale = 10 A/div
horizontal scale = 15 ns/div
GND
GND
vertical scale = 6 V/div
horizontal scale = 100 ns/div
unclamped −8 kV ESD pulse waveform
(IEC 61000-4-2 network)
Fig 5.
clamped −8 kV ESD voltage waveform
(IEC 61000-4-2 network)
006aab564
ESD clamping test setup and waveforms
PESD3V3L1UA_UB_UL_1
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 01 — 17 June 2009
6 of 13
PESD3V3L1UA/UB/UL
NXP Semiconductors
Low capacitance unidirectional ESD protection diodes
7. Application information
The PESD3V3L1Ux series is designed for the protection of one unidirectional data or
signal line from the damage caused by ESD and surge pulses. The devices may be used
on lines where the signal polarities are either positive or negative with respect to ground.
The PESD3V3L1Ux series provides a surge capability up to 45 W per line for an 8/20 µs
waveform.
line to be protected
(positive signal polarity)
line to be protected
(negative signal polarity)
PESD3V3L1Ux
PESD3V3L1Ux
GND
GND
unidirectional protection of one line
006aab614
Fig 6.
Application diagram
Circuit board layout and protection device placement
Circuit board layout is critical for the suppression of ESD and Electrical Fast
Transient (EFT). The following guidelines are recommended:
1. Place the device as close to the input terminal or connector as possible.
2. The path length between the device and the protected line should be minimized.
3. Keep parallel signal paths to a minimum.
4. Avoid running protected conductors in parallel with unprotected conductors.
5. Minimize all Printed-Circuit Board (PCB) conductive loops including power and
ground loops.
6. Minimize the length of the transient return path to ground.
7. Avoid using shared transient return paths to a common ground point.
8. Ground planes should be used whenever possible. For multilayer PCBs, use ground
vias.
8. Test information
8.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is
suitable for use in automotive applications.
PESD3V3L1UA_UB_UL_1
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 01 — 17 June 2009
7 of 13
PESD3V3L1UA/UB/UL
NXP Semiconductors
Low capacitance unidirectional ESD protection diodes
9. Package outline
1.35
1.15
0.45
0.15
1
2.7
2.3
0.85
0.75
1.1
0.8
1
1.65 1.25
1.55 1.15
1.8
1.6
2
2
0.40
0.25
0.25
0.10
0.34
0.26
Dimensions in mm
Fig 7.
03-12-17
Package outline
PESD3V3L1UA (SOD323/SC-76)
0.17
0.11
Dimensions in mm
Fig 8.
02-12-13
Package outline
PESD3V3L1UB (SOD523/SC-79)
0.50
0.46
0.62
0.55
2
0.30
0.22
0.65
0.30
0.22
1.02
0.95
1
0.55
0.47
cathode marking on top side
Dimensions in mm
Fig 9.
0.65
0.58
03-04-17
Package outline PESD3V3L1UL (SOD882)
10. Packing information
Table 10. Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code.[1]
Type number
Package
PESD3V3L1UA
SOD323
PESD3V3L1UB
SOD523
PESD3V3L1UL
[1]
SOD882
Description
4 mm pitch, 8 mm tape and reel
3000
8000
10000
-115
-
-135
2 mm pitch, 8 mm tape and reel
-
-315
-
4 mm pitch, 8 mm tape and reel
-115
-
-135
2 mm pitch, 8 mm tape and reel
-
-
-315
For further information and the availability of packing methods, see Section 14.
PESD3V3L1UA_UB_UL_1
Product data sheet
Packing quantity
© NXP B.V. 2009. All rights reserved.
Rev. 01 — 17 June 2009
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PESD3V3L1UA/UB/UL
NXP Semiconductors
Low capacitance unidirectional ESD protection diodes
11. Soldering
3.05
2.1
solder lands
solder resist
0.5 (2×)
1.65 0.95
0.6 (2×)
solder paste
occupied area
2.2
Dimensions in mm
0.5
(2×)
0.6
(2×)
sod323_fr
Fig 10. Reflow soldering footprint PESD3V3L1UA (SOD323/SC-76)
5
2.9
1.5 (2×)
solder lands
solder resist
occupied area
2.75
1.2
(2×)
Dimensions in mm
preferred transport
direction during soldering
sod323_fw
Fig 11. Wave soldering footprint PESD3V3L1UA (SOD323/SC-76)
PESD3V3L1UA_UB_UL_1
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 01 — 17 June 2009
9 of 13
PESD3V3L1UA/UB/UL
NXP Semiconductors
Low capacitance unidirectional ESD protection diodes
2.15
1.1
solder lands
solder resist
0.5 0.6
(2×) (2×)
1.2
solder paste
occupied area
Dimensions in mm
0.7
(2×)
0.8
(2×)
sod523_fr
Reflow soldering is the only recommended soldering method.
Fig 12. Reflow soldering footprint PESD3V3L1UB (SOD523/SC-79)
1.3
0.7
R0.05 (8×)
solder lands
0.6 0.7
(2×) (2×)
0.9
solder resist
solder paste
occupied area
0.3
(2×)
Dimensions in mm
0.4
(2×)
sod882_fr
Reflow soldering is the only recommended soldering method.
Fig 13. Reflow soldering footprint PESD3V3L1UL (SOD882)
PESD3V3L1UA_UB_UL_1
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 01 — 17 June 2009
10 of 13
PESD3V3L1UA/UB/UL
NXP Semiconductors
Low capacitance unidirectional ESD protection diodes
12. Revision history
Table 11.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
PESD3V3L1UA_UB_UL_1
20090617
Product data sheet
-
-
PESD3V3L1UA_UB_UL_1
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 01 — 17 June 2009
11 of 13
PESD3V3L1UA/UB/UL
NXP Semiconductors
Low capacitance unidirectional ESD protection diodes
13. Legal information
13.1 Data sheet status
Document status[1][2]
Product status[3]
Definition
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
Preliminary [short] data sheet
Qualification
This document contains data from the preliminary specification.
Product [short] data sheet
Production
This document contains the product specification.
[1]
Please consult the most recently issued document before initiating or completing a design.
[2]
The term ‘short data sheet’ is explained in section “Definitions”.
[3]
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
13.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
13.3 Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from national authorities.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
13.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
14. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
PESD3V3L1UA_UB_UL_1
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 01 — 17 June 2009
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PESD3V3L1UA/UB/UL
NXP Semiconductors
Low capacitance unidirectional ESD protection diodes
15. Contents
1
1.1
1.2
1.3
1.4
2
3
4
5
6
7
8
8.1
9
10
11
12
13
13.1
13.2
13.3
13.4
14
15
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
General description. . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data. . . . . . . . . . . . . . . . . . . . . 1
Pinning information . . . . . . . . . . . . . . . . . . . . . . 2
Ordering information . . . . . . . . . . . . . . . . . . . . . 2
Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Application information. . . . . . . . . . . . . . . . . . . 7
Test information . . . . . . . . . . . . . . . . . . . . . . . . . 7
Quality information . . . . . . . . . . . . . . . . . . . . . . 7
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8
Packing information. . . . . . . . . . . . . . . . . . . . . . 8
Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Revision history . . . . . . . . . . . . . . . . . . . . . . . . 11
Legal information. . . . . . . . . . . . . . . . . . . . . . . 12
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 12
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Contact information. . . . . . . . . . . . . . . . . . . . . 12
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2009.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 17 June 2009
Document identifier: PESD3V3L1UA_UB_UL_1