Data Sheet

PESD16VX1UL
Ultra low capacitance unidirectional ESD protection diode
Rev. 01 — 16 December 2009
Product data sheet
1. Product profile
1.1 General description
Ultra low capacitance unidirectional ElectroStatic Discharge (ESD) protection diode in a
leadless ultra small SOD882 Surface-Mounted Device (SMD) plastic package designed to
protect one signal line from the damage caused by ESD and other transients. The
combination of extremely low capacitance, high ESD maximum rating and ultra small
package makes the device ideal for high-speed data line protection and antenna
protection applications.
1.2 Features
„ Unidirectional ESD protection of one line „ ESD protection up to 8 kV
„ Ultra low diode capacitance:
„ IEC 61000-4-2; level 4 (ESD)
Cd = 0.83 pF
„ Low ESD clamping voltage:
„ AEC-Q101 qualified
40 V at 30 ns and ±8 kV
„ Very low leakage current: IRM < 10 nA
1.3 Applications
„
„
„
„
10/100/1000 Mbit/s Ethernet
FireWire
High-speed data lines
Subscriber Identity Module (SIM) card
protection
„ Cellular handsets and accessories
„
„
„
„
Portable electronics
Communication systems
Computers and peripherals
Audio and video equipment
„ Antenna protection
1.4 Quick reference data
Table 1.
Quick reference data
Symbol
Parameter
VRWM
reverse standoff voltage
Cd
diode capacitance
Conditions
f = 1 MHz; VR = 0 V
Min
Typ
Max
Unit
-
-
16
V
-
0.83
0.98
pF
PESD16VX1UL
NXP Semiconductors
Ultra low capacitance unidirectional ESD protection diode
2. Pinning information
Table 2.
Pinning
Pin
Description
1
cathode
2
anode
Simplified outline
Graphic symbol
[1]
1
2
1
2
006aaa152
Transparent
top view
[1]
The marking bar indicates the cathode.
3. Ordering information
Table 3.
Ordering information
Type number
PESD16VX1UL
Package
Name
Description
Version
-
leadless ultra small plastic package; 2 terminals;
body 1.0 × 0.6 × 0.5 mm
SOD882
4. Marking
Table 4.
Marking codes
Type number
Marking code
PESD16VX1UL
Z1
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
IPP
peak pulse current
tp = 8/20 μs
Tj
junction temperature
-
0.9
A
-
85
°C
Tamb
ambient temperature
−40
+85
°C
Tstg
storage temperature
−55
+125
°C
[1]
Non-repetitive current pulse 8/20 μs exponential decay waveform according to IEC 61000-4-5.
[2]
Measured from pin 1 to 2.
PESD16VX1UL_1
Product data sheet
[1][2]
© NXP B.V. 2009. All rights reserved.
Rev. 01 — 16 December 2009
2 of 10
PESD16VX1UL
NXP Semiconductors
Ultra low capacitance unidirectional ESD protection diode
Table 6.
ESD maximum ratings
Tamb = 25 °C unless otherwise specified.
Symbol
Parameter
VESD
Conditions
electrostatic discharge voltage
[1][2]
IEC 61000-4-2
(contact discharge)
MIL-STD-883 (human
body model)
[1]
Device stressed with ten non-repetitive ESD pulses.
[2]
Measured from pin 1 to 2.
Table 7.
Min
Max
Unit
-
8
kV
-
10
kV
ESD standards compliance
Standard
Conditions
IEC 61000-4-2; level 4 (ESD)
> 8 kV (contact)
MIL-STD-883; class 3 (human body model)
> 4 kV
001aaa631
IPP
001aaa630
120
100 %
90 %
100 % IPP; 8 μs
IPP
(%)
80
e−t
50 % IPP; 20 μs
40
10 %
0
10
20
30
30 ns
40
t (μs)
Fig 1.
t
tr = 0.7 ns to 1 ns
0
60 ns
8/20 μs pulse waveform according to
IEC 61000-4-5
Fig 2.
ESD pulse waveform according to
IEC 61000-4-2
PESD16VX1UL_1
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 01 — 16 December 2009
3 of 10
PESD16VX1UL
NXP Semiconductors
Ultra low capacitance unidirectional ESD protection diode
6. Characteristics
Table 8.
Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Min
Typ
Max
Unit
VRWM
reverse standoff
voltage
-
-
16
V
IRM
reverse leakage current VRWM = 16 V
-
10
100
nA
VBR
breakdown voltage
IR = 10 mA
17.5
22
30
V
Cd
diode capacitance
f = 1 MHz; VR = 0 V
VCL
clamping voltage
IPP = 0.9 A
rdyn
dynamic resistance
IR = 10 A
-
0.83
0.98
pF
[1][2]
-
34
-
V
[3]
-
2.4
-
Ω
[1]
Non-repetitive current pulse 8/20 μs exponential decay waveform according to IEC 61000-4-5.
[2]
Measured from pin 1 to 2.
[3]
Non-repetitive current pulse, Transmission Line Pulse (TLP) tp = 100 ns; square pulse;
ANS/IESD STM5.1-2008.
I
006aab951
1.0
Cd
(pF)
0.9
−VCL −VBR −VRWM
0.8
V
−IRM
−IR
0.7
−
+
P-N
0.6
−IPP
0.5
0
4
8
12
16
VR (V)
006aaa407
f = 1 MHz; Tamb = 25 °C
Fig 3.
Diode capacitance as a function of reverse
voltage; typical values
Fig 4.
V-I characteristics for a unidirectional
ESD protection diode
PESD16VX1UL_1
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 01 — 16 December 2009
4 of 10
PESD16VX1UL
NXP Semiconductors
Ultra low capacitance unidirectional ESD protection diode
ESD TESTER
RZ
450 Ω
RG 223/U
50 Ω coax
4 GHz DIGITAL
OSCILLOSCOPE
10×
ATTENUATOR
50 Ω
CZ
IEC 61000-4-2 network
CZ = 150 pF; RZ = 330 Ω
DUT
(DEVICE
UNDER
TEST)
vertical scale = 50 V/div
horizontal scale = 15 ns/div
vertical scale = 2 kV/div
horizontal scale = 15 ns/div
GND
GND
unclamped +8 kV ESD pulse waveform
(IEC 61000-4-2 network)
clamped +8 kV ESD pulse waveform
(IEC 61000-4-2 network) pin1 to 2
vertical scale = 50 V/div
horizontal scale = 15 ns/div
vertical scale = 2 kV/div
horizontal scale = 15 ns/div
GND
GND
unclamped −8 kV ESD pulse waveform
(IEC 61000-4-2 network)
Fig 5.
clamped −8 kV ESD pulse waveform
(IEC 61000-4-2 network) pin 1 to 2
006aab952
ESD clamping test setup and waveforms
PESD16VX1UL_1
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 01 — 16 December 2009
5 of 10
PESD16VX1UL
NXP Semiconductors
Ultra low capacitance unidirectional ESD protection diode
7. Application information
PESD16VX1UL is designed for the protection of one unidirectional data or signal line from
the damage caused by ESD and surge pulses. The device may be used on lines where
the signal polarities are either positive or negative with respect to ground.
Figure 6 shows a typical application for the bidirectional protection of one line using two
PESD16VX1UL diodes in a back-to-back configuration, e.g. Near Field
Communication (NFC) antenna protection.
line to be protected
GND
006aab953
Fig 6.
Typical application
Circuit board layout and protection device placement
Circuit board layout is critical for the suppression of ESD, Electrical Fast Transient (EFT)
and surge transients. The following guidelines are recommended:
1. Place the device as close to the input terminal or connector as possible.
2. The path length between the device and the protected line should be minimized.
3. Keep parallel signal paths to a minimum.
4. Avoid running protected conductors in parallel with unprotected conductors.
5. Minimize all Printed-Circuit Board (PCB) conductive loops including power and
ground loops.
6. Minimize the length of the transient return path to ground.
7. Avoid using shared transient return paths to a common ground point.
8. Ground planes should be used whenever possible. For multilayer PCBs, use ground
vias.
8. Test information
8.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is
suitable for use in automotive applications.
PESD16VX1UL_1
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 01 — 16 December 2009
6 of 10
PESD16VX1UL
NXP Semiconductors
Ultra low capacitance unidirectional ESD protection diode
9. Package outline
0.50
0.46
0.62
0.55
2
0.30
0.22
0.65
0.30
0.22
1
0.55
0.47
cathode marking on top side
Dimensions in mm
Fig 7.
1.02
0.95
03-04-17
Package outline PESD16VX1UL (SOD882)
10. Packing information
Table 9.
Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code.[1]
Type number
Package Description
Packing quantity
10 000
PESD16VX1UL SOD882
[1]
2 mm pitch, 8 mm tape and reel
-315
For further information and the availability of packing methods, see Section 14.
11. Soldering
1.3
0.7
R0.05 (8×)
solder lands
0.6 0.7
(2×) (2×)
0.9
solder resist
solder paste
occupied area
0.3
(2×)
Dimensions in mm
0.4
(2×)
sod882_fr
Reflow soldering is the only recommended soldering method.
Fig 8.
Reflow soldering footprint PESD16VX1UL (SOD882)
PESD16VX1UL_1
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 01 — 16 December 2009
7 of 10
PESD16VX1UL
NXP Semiconductors
Ultra low capacitance unidirectional ESD protection diode
12. Revision history
Table 10.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
PESD16VX1UL_1
20091216
Product data sheet
-
-
PESD16VX1UL_1
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 01 — 16 December 2009
8 of 10
PESD16VX1UL
NXP Semiconductors
Ultra low capacitance unidirectional ESD protection diode
13. Legal information
13.1 Data sheet status
Document status[1][2]
Product status[3]
Definition
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
Preliminary [short] data sheet
Qualification
This document contains data from the preliminary specification.
Product [short] data sheet
Production
This document contains the product specification.
[1]
Please consult the most recently issued document before initiating or completing a design.
[2]
The term ‘short data sheet’ is explained in section “Definitions”.
[3]
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
13.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
13.3 Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from national authorities.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
13.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
14. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
PESD16VX1UL_1
Product data sheet
© NXP B.V. 2009. All rights reserved.
Rev. 01 — 16 December 2009
9 of 10
PESD16VX1UL
NXP Semiconductors
Ultra low capacitance unidirectional ESD protection diode
15. Contents
1
1.1
1.2
1.3
1.4
2
3
4
5
6
7
8
8.1
9
10
11
12
13
13.1
13.2
13.3
13.4
14
15
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
General description . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data . . . . . . . . . . . . . . . . . . . . 1
Pinning information . . . . . . . . . . . . . . . . . . . . . . 2
Ordering information . . . . . . . . . . . . . . . . . . . . . 2
Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Application information. . . . . . . . . . . . . . . . . . . 6
Test information . . . . . . . . . . . . . . . . . . . . . . . . . 6
Quality information . . . . . . . . . . . . . . . . . . . . . . 6
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 7
Packing information . . . . . . . . . . . . . . . . . . . . . 7
Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . 8
Legal information. . . . . . . . . . . . . . . . . . . . . . . . 9
Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 9
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Contact information. . . . . . . . . . . . . . . . . . . . . . 9
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2009.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 16 December 2009
Document identifier: PESD16VX1UL_1
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