Automotive MOSFET Naming

Auto MOSFET Naming
Automotive MOSFET Naming System
I
P
G
20
N 04 S4 L - 07 A
AOI-ready
I  Infineon
only valid for T(S)DSON
RDSon,max in mΩ
“H” in front
for higher ohmic version
i.e. H5=5.5mΩ
“R” as decimal separator
i.e. 1R3=1.3mΩ
Device:
P for Power-MOSFET
T for Twin Power-MOSFET
(Common Drain)
L for Logic Level
(no L is Normal Level)
Package Type:
S for SFET1
S2 for OptiMOS™
S3 for OptiMOS™-T
S4 for OptiMOS™-T2
P3 for PFET3 Trench
P4 for PFET4 Trench
B for TO263/D²PAK
C for SuperSO8 (TDSON-08)
D for TO252/DPAK
I for TO262/I2PAK
LU for TO-Leadless (H-PSOF, MO-299)
P for TO220
G for Dual SuperSO8 (TDSON-08)
Z for Shrink SuperSO8 (TSDSON-08)
2013-12-09
Breakdown voltage VBrDSS ÷10
P for p-channel
N for n-channel
Continuous drain current IDmax
Copyright © Infineon Technologies AG 2013. All rights reserved.
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