Fuji IGBT modules for MV , SVG inverter

Fuji IGBT modules for MV , SVG inverter
Device Application Technology Dept.
Semiconductor Sales Div.
Global Sales Group
Aug. 2013
MT5F27334
© Fuji Electric Co., Ltd. All rights reserved.
1
Table of contents
Topology in MV , SVG inverter
Fuji IGBT modules for MV, SVG inverter
Fuji solution in Gate Driver Unit (GDU) and Stack structure
Aug. 2013
MT5F27334
© Fuji Electric Co., Ltd. All rights reserved.
2
Topology in MV , SVG inverter
Topology (example)
Unit
serial
multilevel
(Robicon
type)
Feature
3.3 kV
1,800 kW
3.3 kV
50 or 60 Hz
Direct
3 level
Inverter
Current
type
Inverter
Aug. 2013
~
~
＋
M
＋
~
~
~
M
・Topology is simple,
easy maintenance,
any output voltage can
be obtained by unit cell
serials
・Input-Transformer is
necessary (high cost)
・Transformer less
・Topology is
complicated
・Reverse-blocking diode
is necessary (Large loss)
MT5F27334
Applicable
device
Applicable
rate
1700V/100A～
1200A
Standard
Module
60%
Around the
world
(China etc.)
3.3kV/800～
1500A
4.5kV/400A～
1500A
HPM
30%
Europe and
America
6.5kV/400A～
1500A
Press
Pack(GCT)
10%
Europe and
America
© Fuji Electric Co., Ltd. All rights reserved.
3
Topology in MV , SVG inverter
Field
Electric
Petroleum
Steel
Cement
Paper
Mining
Transport
Aug. 2013
Application
Topology
Function
Unit serial multi-level
Direct 3 level
Current type
Dust collecting fan
○
○
○
Boiler
○
○
○
Circulation pump
○
○
○
Oil transfer pump
○
○
○
Ventilation fan
○
○
○
Compressor
-
○
○
Rolling
○
○
○
Ventilation fan
○
○
○
Pump
○
○
○
Cooler dust collector
○
○
○
Material mill
○
○
○
Fan
○
○
○
Pulp mill
-
○
○
Exhaust fan
○
○
○
Ventilation fan
○
○
○
Conveyor
-
○
○
Regeneration
Crane
-
○
○
Regeneration
MT5F27334
Regeneration
Regeneration
© Fuji Electric Co., Ltd. All rights reserved.
4
Topology - Unit serial multi-level circuit (6.6kV output)
Transformer
U1
U2
V1
V2
1 cell output :
6600/√3/8=497V
(phase voltage)
W1
W2
U3
V3
6.6kV
U4
V4
U5
U6
V5
V6
W3
6600V(line voltage)
W4
Inverter cell
W5
W6
U7
V7
U8
V8
W7
W8
Local Controller
M
Aug. 2013
MT5F27334
© Fuji Electric Co., Ltd. All rights reserved.
5
Table of contents
Topology in MV , SVG inverter
Fuji IGBT modules for MV, SVG inverter
Fuji solution in Gate Driver Unit (GDU) and Stack structure
Aug. 2013
MT5F27334
© Fuji Electric Co., Ltd. All rights reserved.
6
Fuji IGBT module for MV , SVG inverter
AC output voltage
3.3 kV
6.6 kV
10 kV
Aug. 2013
Inverter capacity (kVA)
Serial
VCES
Ic rating
IGBT P/N
350
4
1700V
100A
2MBI100VA-170-50
500
4
1700V
150A
2MBI150VH-170-50
700
4
1700V
200A
2MBI200VH-170-50
1050
4
1700V
300A
2MBI300VN-170-50
1350
4
1700V
400A
2MBI450VN-170-50
1600
4
1700V
300A x2
2MBI300VN-170-50
720
8
1700V
100A
2MBI100VA-170-50
1090
8
1700V
150A
2MBI150VH-170-50
1450
8
1700V
200A
2MBI200VH-170-50
2180
8
1700V
300A
2MBI300VN-170-50
2900
8
1700V
400A
2MBI450VN-170-50
3490
8
1700V
300A x2
2MBI300VN-170-50
1200
12
1700V
100A
2MBI100VA-170-50
1800
12
1700V
150A
2MBI150VH-170-50
2400
12
1700V
200A
2MBI200VH-170-50
3600
12
1700V
300A
2MBI300VN-170-50
4800
12
1700V
400A
2MBI450VN-170-50
5800
12
1700V
300A x2
2MBI300VN-170-50
MT5F27334
© Fuji Electric Co., Ltd. All rights reserved.
7
Fuji IGBT module for MV , SVG inverter - Standard 2in1
Feature
Low power dissipation with V-silicon chipset
Extra thermal design (Tjmax = 175℃ repetitive guarantee)
Improved thermal cycling capability with new solder
Long-term reliability ( CTI > 600, High Tc capability)
M6 mounting hole for all PKG (except 45mm PKG;M5)
IGBT P/N
Current
Voltage
Package
Equivalent circuit
Base plate
Isolation
Copper
(Cu)
Al3O2
Viso=4.0kV/60s
Copper
(Cu)
Al3O2
Viso=4.0kV/60s
M263:94 x 34 x 30mm
Standard 2in1
2MBI75VA-170-50
75A
1700V
2MBI100VA-170-50
100A
1700V
2MBI150VH-170-50
150A
1700V
2MBI200VH-170-50
200A
1700V
2MBI300VH-170-50
300A
1700V
Aug. 2013
M276:108 x 62 x 30.5mm
MT5F27334
© Fuji Electric Co., Ltd. All rights reserved.
8
Fuji IGBT module for MV , SVG inverter - Dual XT
Feature
Low power dissipation with V-silicon chipset
Extra thermal design (Tjmax = 175℃ repetitive guarantee)
Low inductance and good current balance package
Long-term reliability ( CTI > 600, High Tc capability)
Dual XT
M6 mounting hole for all PKG (except 45mm PKG;M5)
IGBT P/N
Current
Voltage
2MBI300VN-170-50
300A
1700V
2MBI450VN-170-50
450A
1700V
2MBI550VN-170-50
550A
1700V
Package
Equivalent circuit
Base plate
Isolation
Copper
(Cu)
Al3O2
Viso=4.0kV/60s
Copper
(Cu)
Al3O2
Viso=4.0kV/60s
M254:150 x 62 x 17mm
M260:150 x 62 x 17mm
2MBI550VJ-170-50
Aug. 2013
550A
1700V
MT5F27334
© Fuji Electric Co., Ltd. All rights reserved.
9
Fuji IGBT module for MV , SVG inverter - PrimePACKTM
Feature
Low power dissipation with V-silicon chipset
Extra thermal design (Tjmax=175℃ repetitive guarantee)
Low inductance and good current balance package
Long-term reliability ( CTI > 600, High Tc capability)
IGBT part No.
Current
Voltage
Package
Equivalent circuit
Base plate
Isolation
Copper
(Cu)
Al3O2
Viso=4.0kV/60s
Copper
(Cu)
Al3O2
Viso=4.0kV/60s
PrimePACKTM
M271:172 x 89 x 38mm
2MBI650VXA-170E-50
650A
1700V
2MBI1000VXB-170E-50
1000A
1700V
2MBI1400VXB-170E-50
1400A
1700V
2MBI1400VXB-170P-50
1400A
1700V
M272:250 x 89 x 38mm
10
Note: PrimePACKTM are registered trademarks of Infineon Technology AG, Germany.
Aug. 2013
MT5F27334
© Fuji Electric Co., Ltd. All rights reserved.
10
Fuji IGBT module for MV , SVG inverter - HPM (2in1)
Feature
Low power dissipation with V-silicon chipset
Extra thermal design (Tjmax=175℃), AlSiC base plate
Low inductance and good current balance package
Long-term reliability ( CTI > 600, High Tc capability)
2in1
IGBT part No.
Current
Voltage
2MBI600VG-170E
600A
1700V
2MBI800VG-170E
800A
1700V
2MBI1200VG-170E
1200A
1700V
2MBI600VT-170E
600A
1700V
2MBI800VT-170E
800A
1700V
2MBI1200VT-170E
1200A
1700V
Package
Equivalent circuit
Base plate
Isolation
Copper
(Cu)
Si3N4
Viso=4.0kV/60s
AlSiC
AlN
Viso=4.0kV/60s
M256:130 x 140 x 38mm
M278130 x 140 x 38mm
11
Aug. 2013
MT5F27334
© Fuji Electric Co., Ltd. All rights reserved.
11
Fuji IGBT module for MV , SVG inverter - HPM (1in1)
Feature
Low power dissipation with V-silicon chipset
Extra thermal design (Tjmax=175℃), SiN-DCB
Low inductance and good current balance package
Long-term reliability ( CTI > 600, High Tc capability)
1in1
1700V-3600A max rating
IGBT part No.
Current
Voltage
1MBI1200VC-170E
1200A
1700V
1MBI1600VC-170E
1600A
1700V
1MBI2400VC-170E
2400A
1700V
Package
Equivalent circuit
Base plate
Isolation
Copper
(Cu)
Si3N4
Viso=4.0kV/60s
Copper
(Cu)
Si3N4
Viso=4.0kV/60s
M151:130 x 140 x 38mm
M152:190 x 140 x 38mm
1MBI2400VD-170E
1MBI3600VD-170E
Aug. 2013
2400A
3600A
1700V
1700V
MT5F27334
© Fuji Electric Co., Ltd. All rights reserved.
12
12
Fuji IGBT module for MV , SVG inverter - HPM (1in1)
Feature
Low power dissipation with V-silicon chipset
Extra thermal design (Tjmax=175℃), AlSiC base plate
Low inductance and good current balance package
Long-term reliability ( CTI > 600, High Tc capability)
1in1
1700V-3600A max rating
IGBT part No.
Current
Voltage
1MBI1200VR-170E
1200A
1700V
1MBI1600VR-170E
1600A
1700V
1MBI2400VR-170E
2400A
1700V
Package
Equivalent circuit
Base plate
Isolation
AlSiC
AlN
Viso=4.0kV/60s
AlSiC
AlN
Viso=4.0kV/60s
M155:130 x 140 x 38mm
M156:190 x 140 x 38mm
1MBI2400VS-170E
1MBI3600VS-170E
Aug. 2013
2400A
3600A
1700V
1700V
MT5F27334
© Fuji Electric Co., Ltd. All rights reserved.
13
13
Fuji IGBT module for MV , SVG inverter - 3.3kV module
Feature
Trench gate structure for reducing Vce(sat)
FS (field-stop) structure for fast switching and low Vce(sat)
High ruggedness even at Tj = 150℃ operation
High tracking (CTI > 600) special resin for high Viso guarantee
High thermal cycling life time with AlSiC base plate
IGBT part No.
Current
Voltage
Package
Equivalent circuit
Base plate
Isolation
AlSiC
AlN
Viso=6.0kV/60s
AlSiC
AlN
Viso=6.0kV/60s
M155:130 x 140 x 38mm
1MBI800UG-330
1000A
3300V
3300V
1in1
1MBI1000UG-330
800A
M156:190 x 140 x 38mm
1MBI1200UE-330
1MBI1500UE-330
Aug. 2013
1200A
1500A
3300V
3300V
MT5F27334
© Fuji Electric Co., Ltd. All rights reserved.
14
Table of contents
Topology in MV , SVG inverter
Fuji IGBT modules for MV, SVG inverter
Fuji solution in Gate Driver Unit (GDU) and Stack structure
Aug. 2013
MT5F27334
© Fuji Electric Co., Ltd. All rights reserved.
15
Fuji solution in GDU
http://igbt-driver.com/
http://www.idc-com.co.jp/
Aug. 2013
Ic rating
IGBT P/N (example)
Driver type （example）
100A
2MBI100VA-170-50
2SP0115T2Ax
150A
2MBI150VH-170-50
2SP0115T2Ax
200A
2MBI200VH-170-50
2SP0115T2Ax
300A
2MBI300VN-170-50
2SP0115T2Ax
450A
2MBI450VN-170-50
2SP0115T2Ax
550A
2MBI550VN-170-50
2SP0115T2Ax
Ic rating
IGBT P/N (example)
Driver type （example）
75A
2MBI75VA-170-50
VLA546**
100A
2MBI100VA-170-50
VLA546**
150A
2MBI150VH-170-50
VLA546**
200A
2MBI200VH-170-50
VLA546**
300A
2MBI300VN-170-50
VLA546**
450A
2MBI450VN-170-50
VLA500K
MT5F27334
© Fuji Electric Co., Ltd. All rights reserved.
16
PrimePACKTM 2 parallel
Snubber C : 2～3 uF
Side view
Output Terminal
Snubber Cap.
Snubber Cap.
Bus Bar
Main Cap.
Gate Drive Unit
PrimePACK TM can
easily construct inverter
circuit .
This figure shows the
example.
Cooling fin
Top view
Laminate bus bar to
realize low leakage
inductance.
Note: PrimePACKTM are registered trademarks of Infineon Technology AG, Germany.
Aug. 2013
MT5F27334
© Fuji Electric Co., Ltd. All rights reserved.
17
Snubber capacitors
L * Io2
CS 
VCEP  Ed
2
VCEP
L: Main circuit wiring parasitic inductance
Io: Collector current at IGBT turn-off
VCEP: Snubber capacitor peak voltage
Ed: DC supply voltage
Module rating
Vces
Ic
100A
300A
1200V/1700V
450A
1000A
1400A
Aug. 2013
DC line inductance snubber capacitance
0.2 μH
0.1μH
0.08 μH
0.07μH
0.06μH
MT5F27334
0.47μF
3.3μF
4.7μF
6.8μF
12μF
© Fuji Electric Co., Ltd. All rights reserved.
18