SiC Silicon Carbide Diode thin Q! T M S iC Sc ho ttk y Dio de 1200V SiC Schottky Diode IDW 10S120 Final Da ta sheet Rev. 2.0,<2012-03-23> Po wer Ma n age m ent & M ulti m ark et thinQ!™ SiC Schottky Diode 1 IDW10S120 Description The 1200V family of Infineon SiC Schottky diodes has emerged over the years as the industry standard and is now being extended with the IDWxxS120 product family in the TO247 package. The very good thermal characteristics of the TO247 in combination with the low Vf of the 1200V diodes make it particularly suitable in power applications where relatively high currents are demanded and utmost efficiency is required. With the introduction of this package, Infineon now offers a current capability of up to 30A in the 1200V range. 1 2 3 Features Revolutionary semiconductor material - Silicon Carbide Benchmark switching behavior No reverse recovery/ No forward recovery Temperature independent switching behavior High surge current capability Pb-free lead plating; RoHS compliant 1) Qualified according to JEDEC for target applications Optimized for high temperature operation 1 2 CASE 3 Benefits System efficiency improvement over Si diodes System cost / size savings due to reduced cooling requirements Enabling higher frequency / increased power density solutions Higher system reliability due to lower operating temperatures Reduced EMI Applications SMPS; CCM PFC Solar applications; UPS; Motor Drives Table 1 Key Performance Parameters Parameter Value Unit VDC 1200 V QC @ VR=400V 36 nC IF @ Tc < 140°C 10 A Table 2 Pin 1 n.c. Pin Definition Pin 2 Pin 3 C A Type / ordering Code IDW10S120 Package PG-TO247-3 Marking D10S120 Related links www.infineon.com/sic 1) J-STD20 and JESD22 Final Data Sheet 2 Rev. 2.0, 2012-03-23 thinQ!TM SiC Schottky Diode IDW10S120 Table of contents Table of Contents 1 Description .......................................................................................................................................... 2 2 Maximum ratings ................................................................................................................................ 4 3 Thermal characteristics ..................................................................................................................... 4 4 Electrical characteristics ................................................................................................................... 5 5 Electrical characteristics diagrams .................................................................................................. 6 6 Package outlines ................................................................................................................................ 8 7 Revision History ................................................................................................................................. 9 Final Data Sheet 3 Rev. 2.0, 2012-03-23 thinQ!TM SiC Schottky Diode IDW10S120 Maximum ratings 2 Table 3 Parameter Maximum ratings Maximum ratings Symbol Continuous forward current Values Unit Min. Typ. – – Max. 10 IF Surge non-repetitive forward current, IF,SM sine halfwave – – 53 – – 44 IF,max – – 266 – 14 Non-repetitive peak forward current ∫ i²dt i²t value – Note/Test Condition TC < 140°C, D=1 A TC = 25°C, tp=10 ms TC = 150°C, tp=10 ms TC = 25°C, tp=10 µs A²s TC = 25°C, tp=10 ms – – 10 Repetitive peak reverse voltage VRRM – – 1200 V Diode dv/dt ruggedness dv/dt – – 50 V/ns VR=0..480 V – 115 W TC = 25°C -55 – 175 °C – – 60 Ncm Power dissipation Operating and storage temperature – Ptot Tj;Tstg Mounting torque 3 Table 4 Parameter TC = 150°C, tp=10 ms M3 and M3.5 screws Thermal characteristics Thermal characteristics TO-247-3 Symbol Values Min. Unit Thermal resistance, junction-case RthJC – Typ. – Thermal resistance, junctionambient RthJA – – 62 K/W leaded Tsold Soldering temperature, wavesoldering only allowed at leads – – 260 °C 1.6mm (0.063 in.) from case for 10 s Final Data Sheet 4 Max. 1.30 Note/Test Condition Rev. 2.0, 2012-03-23 thinQ!TM SiC Schottky Diode IDW10S120 Electrical characteristics 4 Table 5 Parameter Electrical characteristics Static characteristics Symbol Values Unit Min. Typ. Max. DC blocking voltage VDC 1200 – – Diode forward voltage VF – 1.5 1.8 – 2.4 – – 5 240 – 20 500 Reverse current Table 6 Parameter IR Note/Test Condition IR = 0.24 mA, Tj = 25°C V IF= 10 A, Tj=25°C IF= 10 A, Tj=150°C µA VR=1200 V, Tj=25°C VR=1200 V, Tj=150°C AC characteristics Total capacitive charge Symbol Qc Values Unit Min. Typ. Max. – 36 – 55 – – 580 – – 50 – – 40 – nC Total Capacitance Final Data Sheet C 5 pF Note/Test Condition VR=400 V, di/dt=200A/µs, IF≤IF,MAX, Tj=150°C. VR=1000 V, di/dt=200A/µs, IF≤IF,MAX, Tj=150°C. VR=1 V, f=1 MHz VR=300 V, f=1 MHz VR=600 V, f=1 MHz Rev. 2.0, 2012-03-23 thinQ!TM SiC Schottky Diode IDW10S120 Electrical characteristics diagrams 5 Electrical characteristics diagrams Table 7 Power dissipation Diode forward current 80 140 0.1 0.3 70 120 0.5 60 0.7 100 1 80 IF[A] Ptot[W] 50 40 60 30 40 20 20 10 0 25 50 75 100 125 150 0 175 25 50 75 TC[°C] 100 125 150 175 TC[°C] IF=f(TC); Tj≤175°C; RthJC,max; parameter D=duty cycle Ptot=f(TC); RthJC,max Table 8 Typical forward characteristics Typ. reverse current vs. reverse voltage 1.E-4 20 -55°C 25°C 18 100°C 16 14 175°C 150°C 12 1.E-6 175°C IR [A] IF [ A] 1.E-5 10 8 150°C 100°C 1.E-7 6 25°C 1.E-8 4 2 -55°C 1.E-9 0 200 0 0.5 1 1.5 2 2.5 3 3.5 4 400 4.5 800 1000 1200 VR [V] VF [V] IF=f(VF); tp=200 µs; parameter: Tj Final Data Sheet 600 IR=f(VR); parameter: Tj; 6 Rev. 2.0, 2012-03-23 thinQ!TM SiC Schottky Diode IDW10S120 Electrical characteristics diagrams Table 9 Typ. capacitance charge vs. current slope 1) Max. transient thermal impedance 40 1 35 30 Zth,jc [K/W] QC[nC] 25 20 15 0.5 0.2 0.1 0.05 0.02 0.01 single pulse 0.1 10 5 0 100 300 500 700 0.01 1.E-06 900 1.E-03 1.E+00 tp [s] dIF/dt [A/µs] QC=f(diF/dt); VR=400V; Tj=150°C; IF≤IF,max Zth,jc=f(tP); parameter: D=tP/T 1) Only capacitive charge, guaranteed by design. Table 10 Typ. capacitance stored energy Typ. capacitance vs. reverse voltage 800 30 700 25 600 500 15 C [pF] EC[µJ] 20 400 300 10 200 5 100 0 0 0 200 400 600 800 1000 0.1 1200 10 100 1000 VR [V] VR [V] EC=f(VR) Final Data Sheet 1 C=f(VR); Tj=25°C; f=1 MHz 7 Rev. 2.0, 2012-03-23 thinQ!TM SiC Schottky Diode IDW10S120 Package outlines 6 Figure 1 Package outlines Outlines TO-247, dimensions in mm/inches Final Data Sheet 8 Rev. 2.0, 2012-03-23 thinQ!TM SiC Schottky Diode IDW10S120 Revision History 7 Revision History TM thinQ! SiC Schottky Diode Revision History: 2012-03-23, Rev. 2.0 Previous Revision: Revision Subjects (major changes since last version) We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: [email protected] Edition 2012-03-23 Published by Infineon Technologies AG 81726 Munich, Germany © 2012 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. The Infineon Technologies component described in this Data Sheet may be used in life-support devices or systems and/or automotive, aviation and aerospace applications or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support, automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Final Data Sheet 9 Rev. 2.0, 2012-03-23 w w w . i n f i n e o n . c o m Published by Infineon Technologies AG