CD214-B120 B1100

PL
IA
N
T
Features
CO
M
■ RoHS compliant*
*R
oH
S
■ SMA package
■ Surface mount
■ Very low forward voltage drop
CD214A-B120 ~ B1100 Schottky Barrier Rectifier Chip Diode
General Information
The markets of portable communications, computing and video equipment are challenging the semiconductor industry to develop
increasingly smaller electronic components.
Bourns offers Schottky Rectifier Diodes for rectification applications, in compact chip package DO-214AC (SMA) size format, which
offer PCB real estate savings and are considerably smaller than competitive parts. The Schottky Rectifier Diodes offer a forward
current of 1 A with a choice of repetitive peak reverse voltage of 20 V up to 100 V.
Bourns® Chip Diodes conform to JEDEC standards, are easy to handle on standard pick and place equipment and their flat
configuration minimizes roll away.
Electrical Characteristics (@ TA = 25 °C Unless Otherwise Noted)
Parameter
Forward Voltage (Max.)
(lf = 1 A)
Typical Junction
Capacitance**
Reverse Current (Max.)
at Rated VR)
Symbol
CD214AB150 B160
B120
B120L
B130
B130L
B140
VF
0.5
0.41
0.5
0.41
0.5
0.7
CT
110
100
110
100
110
IR
500
1000
500
1000
500
Unit
B170
B180
B190
B1100
0.7
0.79
0.79
0.79
0.79
V
110
110
30
30
30
30
pF
500
500
500
500
500
500
μA
B170
B180
B190
B1100
** Measured at 1.0 MHz and applied reverse voltage of 4.0 VDC.
Absolute Ratings (@ TA = 25 °C Unless Otherwise Noted)
Parameter
Repetitive Peak
Reverse Voltage
Reverse Voltage
Maximum RMS Voltage
Avg. Forward Current
Forward Current,
Surge Peak
(60 Hz, 1 cycle)
Typical Thermal
Resistance***
Storage Temperature
Junction Temperature
Symbol
CD214AB150 B160
Unit
B120
B120L
B130
B130L
B140
VRRM
20
20
30
30
40
50
60
70
80
90
100
V
VR
VRMS
IO
20
14
20
14
30
21
30
21
40
28
50
35
1
60
42
70
49
80
56
90
63
100
70
V
V
A
Isurge
30
25
30
25
30
30
30
30
30
30
30
A
RƟJL
20
35
20
35
20
20
20
25
25
25
25
°C/W
TSTG
TJ
-55 to +150
-55 to +125
°C
°C
*** Thermal resistance junction to lead.
How to Order
CD 214A - B 1 30 L LF
Asia-Pacific: Tel: +886-2 2562-4117 • Fax: +886-2 2562-4116
EMEA: Tel: +36 88 520 390 • Fax: +36 88 520 211
The Americas: Tel: +1-951 781-5500 • Fax: +1-951 781-5700
www.bourns.com
*RoHS Directive 2002/95/EC Jan. 27, 2003 including annex and RoHS Recast
2011/65/EU June 8, 2011.
Specifications are subject to change without notice.
The device characteristics and parameters in this data sheet can and do vary in different
applications and actual device performance may vary over time.
Users should verify actual device performance in their specific applications.
Common Code
Chip Diode
Package
214A = SMA/DO-214AC
Model
B = Schottky Barrier Series
Average Forward Current (IO) Code
1 = 1 A (Code x 1000 mA = Average Forward Current)
Reverse Voltage (VR) Code
30 = 30 V
40 = 40 V
100 = 100 V
Forward Voltage Suffix (Applies to -B120L & -B130L only)
L = Low Forward Voltage Vf (-B120L & -B130L only)
No Space in P/N = Not Low Forward Voltage
Terminations
LF = 100 % Sn (RoHS Compliant*)
CD214A-B120 ~ B1100 Schottky Barrier Rectifier Chip Diode
Product Dimensions
Recommended Pad Layout
A
A
B
C
B
C
G
F
H
D
Dimension
SMA (DO-214AC)
A
2.90
(0.114)
B
2.40
(0.094)
C
2.30
(0.091)
E
Dimension
SMA (DO-214AC)
A
4.06 - 4.57
(0.160 - 0.180)
B
2.29 - 2.92
(0.090 - 0.115)
C
1.27 - 1.63
(0.050 - 0.064)
D
0.15 - 0.31
(0.006 - 0.110)
E
4.83 - 5.59
(0.190 - 0.220)
F
0.05 - 0.20
(0.002 - 0.008)
G
2.01 - 2.62
(0.080 - 0.103)
H
0.76 - 1.52
(0.030 - 0.060)
DIMENSIONS:
MM
(INCHES)
DIMENSIONS:
MM
(INCHES)
Physical Specifications
Case ...........................................................................Molded plastic
Polarity.................................................... Indicated by cathode band
Weight .................................................. 0.002 ounces / 0.064 grams
Typical Part Marking
CD214A-B120 ....................................................................... B120
CD214A-B120L ..................................................................... B120L
CD214A-B130 ....................................................................... B130
CD214A-B130L ..................................................................... B130L
CD214A-B140 ....................................................................... B140
CD214A-B150 ....................................................................... B150
CD214A-B160 ....................................................................... B160
CD214A-B170 ....................................................................... B170
CD214A-B180 ....................................................................... B180
CD214A-B190 ....................................................................... B190
CD214A-B1100...................................................................... B1100
Specifications are subject to change without notice.
The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time.
Users should verify actual device performance in their specific applications.
CD214A-B120 ~ B1100 Schottky Barrier Rectifier Chip Diode
Rating and Characteristic Curves: CD214A-B120, CD214A-B130, CD214A-B140, CD214A-B150 & CD214A-B160
Forward Characteristics
Reverse Characteristics
10
100
10
Reverse Current (mAmps)
Forward Current (Amps)
B120 to B140
B150 to B160
1
0.1
Tj=125 °C
Tj=100 °C
1
0.1
0.01
Tj=25 °C
Tj=25 °C
0.001
0.01
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0
1.8
20
40
60
80
100
120
140
Percent of Rated Peak Reverse Voltage (%)
Forward Voltage (Volts)
Derating Curve
Capacitance Between Terminals
1.25
1000
0.75
Capacitance (pF)
Average Forward Current (Amps)
1.00
0.50
100
0.25
Single Phase Half Wave 60 Hz
Resistive or Inductive Load
Tj = 25 °C
F = 1 MHz
0
0.00
25
50
75
100
Lead Temperature (°C)
125
150
0.1
1.0
4.0
10.0
Reverse Voltage (Volts)
Specifications are subject to change without notice.
The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time.
Users should verify actual device performance in their specific applications.
100
CD214A-B120 ~ B1100 Schottky Barrier Rectifier Chip Diode
Rating and Characteristic Curves: CD214A-B120L, CD214A-B130L
Forward Characteristics
Reverse Characteristics
10
100
Reverse Current (mAmps)
Forward Current (Amps)
10
1.0
Tj=125 °C
Tj=100 °C
1
0.1
0.01
Tj = 25 °C
Tj=25 °C
0.1
0.001
0.2
0.0
0.4
0.6
0.8
1.0
0
20
Forward Voltage (Volts)
40
60
80
100
120
140
Percent of Rated Peak Reverse Voltage (%)
Derating Curve
Capacitance Between Terminals
1.25
1000
0.75
Capacitance (pF)
Average Forward Current (Amps)
1.00
0.50
100
0.25
Single Phase Half Wave 60 Hz
Resistive or Inductive Load
Tj = 25 °C
F = 1 MHz
0
0.00
25
50
75
100
Lead Temperature (°C)
125
150
0.1
1.0
4.0
10.0
100
Reverse Voltage (Volts)
Specifications are subject to change without notice.
The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time.
Users should verify actual device performance in their specific applications.
CD214A-B120 ~ B1100 Schottky Barrier Rectifier Chip Diode
Rating and Characteristic Curves: CD214A-B170, CD214A-B180, CD214A-B190 & CD214A-B1100
Forward Characteristics
Reverse Characteristics
100
10
Reverse Current (mAmps)
Forward Current (Amps)
10
1
0.1
Tj=125 °C
1
Tj=100 °C
0.1
0.01
Tj=25 °C
Tj=25 °C
0.001
0.01
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0
1.8
20
40
60
80
100
120
140
Percent of Rated Peak Reverse Voltage (%)
Forward Voltage (Volts)
Derating Curve
Capacitance Between Terminals
1.25
1000
0.75
Capacitance (pF)
Average Forward Current (Amps)
1.00
0.50
100
0.25
Single Phase Half Wave 60 Hz
Resistive or Inductive Load
Tj = 25 °C
F = 1 MHz
0.00
25
50
75
100
Lead Temperature (°C)
125
150
0
0.1
1.0
4.0
10.0
Reverse Voltage (Volts)
Specifications are subject to change without notice.
The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time.
Users should verify actual device performance in their specific applications.
100
3312 - 2 mm~ B1100
SMD Trimming
Potentiometer
CD214A-B120
Schottky Barrier
Rectifier Chip Diode
Packaging Information
The product is dispensed in tape and reel format (see diagram below).
P
0
P
1
d
T
E
Index Hole
Pin 1
Location
120 °
F
D2
W
B
D1 D
P
A
Trailer
.......
.......
End
C
Device
.......
.......
Leader
.......
.......
.......
.......
W1
Start
DIMENSIONS:
10 pitches (min.)
MM
(INCHES)
10 pitches (min.)
Direction of Feed
Item
Symbol
SMA (DO-214AC)
Carrier Width
A
2.90 ± 0.10
(0.114 ± 0.004)
Carrier Length
B
5.59 ± 0.10
(0.220 ± 0.004)
Carrier Depth
C
2.36 ± 0.10
(0.093 ± 0.004)
Sprocket Hole
d
1.55 ± 0.05
(0.061 ± 0.002)
Reel Outside Diameter
D
3.30
(12.992)
Reel Inner Diameter
D1
Feed Hole Diameter
D2
13.0 ± 0.20
(0.512 ± 0.008)
Sprocket Hole Position
E
1.75 ± 0.10
(0.069 ± 0.004)
Punch Hole Position
F
5.50 ± 0.05
(0.217 ± 0.002)
Punch Hole Pitch
P
4.00 ± 0.10
(0.157 ± 0.004)
Sprocket Hole Pitch
P0
4.00 ± 0.10
(0.157 ± 0.004)
Embossment Center
P1
2.00 ± 0.05
(0.079 ± 0.002)
Overall Tape Thickness
T
0.30 ± 0.10
(0.012 ± 0.004)
Tape Width
W
12.00 ± 0.20
(0.472 ± 0.008)
Reel Width
W1
Quantity per Reel
--
Devices are packed in accordance with EIA standard RS-481-A
and specifications shown here.
50.0
MIN.
(1.969)
18.4
MAX.
(0.724)
5,000
REV. 09/15
Specifications are subject to change without notice.
The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time.
Users should verify actual device performance in their specific applications.
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