Power Transistors 2SC3976 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit: mm φ 3.3±0.2 5.0±0.3 3.0 ■ Absolute Maximum Ratings (TC=25˚C) Parameter Symbol Ratings Unit Collector to base voltage VCBO 800 V VCES 800 V Collector to emitter voltage VCEO 500 V Emitter to base voltage VEBO 8 V Peak collector current ICP 25 A Collector current IC 12 A Base current IB 6 A Collector power TC=25°C dissipation Ta=25°C 150 PC Junction temperature Tj Storage temperature Tstg 4.0 10.0 2.0 2.0 1.5 2.0±0.3 2.7±0.3 3.0±0.3 1.0±0.2 0.6±0.2 5.45±0.3 10.9±0.5 1 2 3 1:Base 2:Collector 3:Emitter TOP–3L Package W 3.5 ■ Electrical Characteristics 1.5 Solder Dip ● 26.0±0.5 ● High-speed switching High collector to base voltage VCBO Wide area of safe operation (ASO) Satisfactory linearity of foward current transfer ratio hFE 1.5 ● 20.0±0.5 2.5 ● 6.0 ■ Features 3.0 20.0±0.5 150 ˚C –55 to +150 ˚C (TC=25˚C) Symbol Parameter Conditions min typ Unit 100 µA 100 µA ICBO Emitter cutoff current IEBO VEB = 5V, IC = 0 Collector to emitter voltage VCEO IC = 10mA, IB = 0 500 hFE1 VCE = 5V, IC = 0.1A 15 hFE2 VCE = 5V, IC = 7A 8 Collector to emitter saturation voltage VCE(sat) IC = 7A, IB = 1.4A 1.0 V Base to emitter saturation voltage VBE(sat) IC = 7A, IB = 1.4A 1.5 V Transition frequency fT VCE = 10V, IC = 1A, f = 1MHz Turn-on time ton Storage time tstg Fall time tf Forward current transfer ratio VCB = 800V, IE = 0 max Collector cutoff current IC = 7A, IB1 = 1.4A, IB2 = –2.8A, VCC = 200V V 15 MHz 1.0 µs 3.0 µs 0.3 µs 1 Power Transistors 2SC3976 IC — VCE VCE(sat) — IC 24 (1) 150 100 50 20 Collector current IC (A) 16 IB=700mA 12 600mA 500mA 400mA 300mA 200mA 8 100mA 4 (3) (2) 0 0 20 40 60 80 100 120 140 160 0 Ambient temperature Ta (˚C) 2 4 10 3 TC=–25˚C 100˚C 25˚C 0.3 1 3 10 30 300 100 30 TC=100˚C 10 25˚C 0.3 1 3 10 30 0.1 –25˚C 0.03 0.01 0.1 0.3 300 100 30 100 Collector to base voltage VCB (V) 10 30 100 VCE=10V f=1MHz TC=25˚C 30 10 3 1 0.3 0.1 0.3 1 3 10 Area of safe operation (ASO) Pulsed tw=1ms Duty cycle=1% IC/IB=5 (2IB1=–IB2) VCC=200V TC=25˚C 10 3 tstg 1 ton 0.3 tf 0.1 Non repetitive pulse TC=25˚C ICP 30 IC t=0.5ms 1ms 10 10ms 3 DC 1 0.3 0.1 0.03 0.01 0.01 30 3 Collector current IC (A) 0.03 10 1 100 30 Switching time ton,tstg,tf (µs) 1000 10 25˚C 0.1 0.01 0.03 100 ton, tstg, tf — IC IE=0 f=1MHz TC=25˚C 3 TC=100˚C 0.3 100 100 1 1 Collector current IC (A) Cob — VCB Collector output capacitance Cob (pF) –25˚C 3 1 0.1 100 10000 3000 3 Collector current IC (A) VCE=5V Collector current IC (A) 2 12 10 fT — IC 1000 Forward current transfer ratio hFE Base to emitter saturation voltage VBE(sat) (V) 30 0.3 10 IC/IB=5 30 hFE — IC IC/IB=5 0.1 0.1 8 100 Collector to emitter voltage VCE (V) VBE(sat) — IC 100 1 6 Transition frequency fT (MHz) 0 Collector current IC (A) Collector power dissipation PC (W) TC=25˚C (1) TC=Ta (2) With a 100 × 100 × 2mm Al heat sink (3) Without heat sink (PC=3.5W) Collector to emitter saturation voltage VCE(sat) (V) PC — Ta 200 0 5 10 15 Collector current IC (A) 20 1 3 10 30 100 300 1000 Collector to emitter voltage VCE (V) Power Transistors 2SC3976 Area of safe operation, reverse bias ASO Reverse bias ASO measuring circuit 16 Lcoil=30µH IC/IB=5 (IB1=–IB2) TC≤100˚C Collector current IC (A) 14 ICP 12 L coil IB1 10 T.U.T –IB2 Vin 8 IC VCC 6 4 Vclamp tW 2 0 0 100 200 300 400 500 600 700 800 Collector to emitter voltage VCE (V) Rth(t) — t Thermal resistance Rth(t) (˚C/W) 10000 Note: Rth was measured at Ta=25˚C and under natural convection. (1) PT=10V × 0.3A (3W) and without heat sink (2) PT=10V × 1.0A (10W) and with a 100 × 100 × 2mm Al heat sink 1000 100 (1) 10 (2) 1 0.1 10–4 10–3 10–2 10–1 1 10 102 103 104 Time t (s) 3