Power Transistors 2SD2255 Silicon NPN triple diffusion planar type Darlington For power amplification Complementary to 2SB1493 Unit: mm 15.0±0.5 4.0±0.1 4.0±0.1 15.0±0.2 20.0±0.3 10.5±0.5 2.0±0.1 φ3.2±0.1 3.5 ● Optimum for 60W HiFi output High foward current transfer ratio hFE: 5000 to 30000 Low collector to emitter saturation voltage VCE(sat): <2.5V 19.0±0.3 ● 16.2±0.5 ● 12.5 ■ Features 4.5±0.2 13.0±0.5 (TC=25˚C) Parameter Symbol Ratings Unit Collector to base voltage VCBO 160 V Collector to emitter voltage VCEO 140 V Emitter to base voltage VEBO 5 V Peak collector current ICP 12 A Collector current IC 7 A Collector power TC=25°C dissipation Ta=25°C 70 PC Junction temperature Tj Storage temperature Tstg W 2.5 150 ˚C –55 to +150 ˚C 2.0±0.2 Solder Dip ■ Absolute Maximum Ratings 1.4±0.3 1.1±0.1 0.6±0.2 5.45±0.3 10.9±0.5 1 2 1:Base 2:Collector 3:Emitter EIAJ:SC–65(a) TOP–3 Package(a) 3 Internal Connection C B E ■ Electrical Characteristics (TC=25˚C) Symbol Parameter ICBO Collector cutoff current max Unit VCB = 160V, IE = 0 100 µA Conditions min typ ICEO VCE = 140V, IB = 0 100 µA Emitter cutoff current IEBO VEB = 5V, IC = 0 100 µA Collector to emitter voltage VCEO IC = 30mA, IB = 0 140 hFE1 VCE = 5V, IC = 1A 2000 hFE2* VCE = 5V, IC = 6A 5000 Collector to emitter saturation voltage VCE(sat) IC = 6A, IB = 6mA Base to emitter saturation voltage VBE(sat) IC = 6A, IB = 6mA Transition frequency fT VCE = 10V, IC = 0.5A, f = 1MHz Turn-on time ton Storage time tstg Fall time tf Forward current transfer ratio *h FE2 IC = 6A, IB1 = 6mA, IB2 = –6mA, VCC = 50V V 30000 2.5 3.0 V V 20 MHz 2.5 µs 5.0 µs 2.5 µs Rank classification Rank hFE2 Q P 5000 to 15000 8000 to 30000 1 Power Transistors 2SD2255 PC — Ta 60 50 40 30 20 (2) TC=25˚C 10 IB=5mA 8 1mA 0.9mA 0.8mA 0.7mA 0.6mA 0.5mA 0.4mA 6 4 0.3mA 0.2mA 2 10 0.1mA (3) 0 0 20 40 60 80 100 12 140 160 0 Ambient temperature Ta (˚C) 2 10 IC/IB=1000 10 30000 1000 25˚C –25˚C 1 0.3 1 3 10 30 25˚C 300 –25˚C 100 30 10 0.01 0.03 100 1 3 10 Non repetitive pulse TC=25˚C 30 ton 3 tf 1 0.3 0.1 ICP 10 t=1ms 10ms IC DC 3 1 0.3 0.1 0.03 0.03 0.01 0.01 0 4 8 0.3 0.3 1 12 Collector current IC (A) 16 3 10 30 100 Collector current IC (A) 1 3 IE=0 f=1MHz TC=25˚C 300 100 30 10 3 10 30 100 300 1 3 10 30 100 Collector to base voltage VCB (V) Area of safe operation (ASO) Collector current IC (A) tstg 10 0.3 100 Pulsed tw=1ms Duty cycle=1% IC/IB=1000 (IB1=–IB2) VCC=50V TC=25˚C 30 100˚C 25˚C 1 0.1 Collector current IC (A) ton, tstg, tf — IC 100 TC=–25˚C 1 Cob — VCB 3000 TC=100˚C TC=100˚C 0.3 3 1000 10000 0.1 0.1 10 0.1 0.1 12 VCE=5V 30 3 30 hFE — IC Forward current transfer ratio hFE Collector to emitter saturation voltage VCE(sat) (V) 8 100000 Collector current IC (A) Switching time ton,tstg,tf (µs) 6 IC/IB=1000 Collector to emitter voltage VCE (V) VCE(sat) — IC 100 4 Collector output capacitance Cob (pF) 0 2 VBE(sat) — IC 100 Base to emitter saturation voltage VBE(sat) (V) (1) TC=Ta (2) With a 100 × 100 × 2mm Al heat sink (3) Without heat sink (PC=2.5W) (1) 70 IC — VCE 12 Collector current IC (A) Collector power dissipation PC (W) 80 1000 Collector to emitter voltage VCE (V) Power Transistors 2SD2255 Rth(t) — t Thermal resistance Rth(t) (˚C/W) 1000 Note: Rth was measured at Ta=25˚C and under natural convection. (1) PT=10V × 0.2A (2W) and without heat sink (2) PT=10V × 1.0A (10W) and with a 100 × 100 × 2mm Al heat sink 100 (1) (2) 10 1 0.1 10–4 10–3 10–2 10–1 1 10 102 103 104 Time t (s) 3