Power Transistors 2SD2000 Silicon NPN triple diffusion planar type For power switching Unit: mm ■ Absolute Maximum Ratings (TC=25˚C) Parameter Symbol Ratings Unit Collector to base voltage VCBO 80 V Collector to emitter voltage VCEO 60 V Emitter to base voltage VEBO 6 V Peak collector current ICP 8 A Collector current IC 4 A Base current IB 1 A Collector power TC=25°C 35 PC Ta=25°C dissipation Junction temperature Tj Storage temperature Tstg 4.2±0.2 7.5±0.2 φ3.1±0.1 1.4±0.1 0.8±0.1 0.5 +0.2 –0.1 2.54±0.25 5.08±0.5 1 2 3 1:Base 2:Collector 3:Emitter TO–220 Full Pack Package(a) 150 ˚C –55 to +150 ˚C (TC=25˚C) Parameter Symbol Conditions min Collector cutoff current ICBO Emitter cutoff current IEBO VEB = 6V, IC = 0 Collector to emitter voltage VCEO IC = 25mA, IB = 0 60 * hFE1 Forward current transfer ratio 1.3±0.2 W 2 ■ Electrical Characteristics 16.7±0.3 ● 2.7±0.2 4.0 ● High-speed switching Satisfactory linearity of foward current transfer ratio hFE Large collector power dissipation PC Full-pack package which can be installed to the heat sink with one screw 14.0±0.5 ● 4.2±0.2 5.5±0.2 Solder Dip ● 10.0±0.2 0.7±0.1 ■ Features typ VCB = 80V, IE = 0 VCE = 4V, IC = 1A 70 hFE2 VCE = 4V, IC = 4A 20 max Unit 100 µA 100 µA V 250 Base to emitter saturation voltage VBE(sat) VCE = 4V, IC = 4A 2.0 V Collector to emitter saturation voltage VCE(sat) IC = 4A, IB = 0.4A 1.5 V Transition frequency fT VCE = 12V, IC = 0.2A, f = 10MHz Turn-on time ton Storage time tstg Fall time tf *h FE1 IC = 4A, IB1 = 0.4A, IB2 = – 0.4A, VCC = 50V 80 MHz 0.3 µs 1.0 µs 0.2 µs Rank classification Rank Q P hFE1 70 to 150 120 to 250 1 Power Transistors 2SD2000 PC — Ta IC — VCE VCE(sat) — IC (1) TC=Ta (2) With a 100 × 100 × 2mm Al heat sink (3) With a 50 × 50 × 2mm Al heat sink (4) Without heat sink (PC=2W) (1) 35 30 25 20 15 (2) 10 IB=40mA Collector to emitter saturation voltage VCE(sat) (V) 4 TC=25˚C 35mA Collector current IC (A) Collector power dissipation PC (W) 40 3 30mA 25mA 20mA 2 15mA 10mA 1 5mA (3) 5 (4) 0 0 0 20 40 60 80 100 120 140 160 0 Ambient temperature Ta (˚C) 1 2 3 VBE(sat) — IC 7 8 3 TC=–25˚C 100˚C 25˚C 0.1 0.03 0.3 1 0.3 TC=100˚C 0.1 3 0.03 0.01 0.01 0.03 103 TC=100˚C 102 –25˚C 25˚C 10 1 0.01 0.03 Collector current IC (A) Cob — VCB 0.1 0.3 1 3 Switching time ton,tstg,tf (µs) 10 1 3 10 100 10 1 0.1 0.01 0.03 10 1 3 10 Area of safe operation (ASO) Non repetitive pulse TC=25˚C 30 tstg 1 ton tf 0.1 0.3 100 Pulsed tw=1ms Duty cycle=1% IC/IB=10 (IB1=–IB2) VCC=50V TC=25˚C 10 0.1 Collector current IC (A) ton, tstg, tf — IC 100 10000 100 0.3 VCE=12V f=10MHz TC=25˚C Collector current IC (A) 1000 0.1 VCE=4V 10 IE=0 f=1MHz TC=25˚C –25˚C 25˚C fT — IC Collector current IC (A) 0.1 1 Collector current IC (A) Transition frequency fT (MHz) 10 0.3 3 1000 IC/IB=10 30 1 10 hFE — IC Forward current transfer ratio hFE Base to emitter saturation voltage VBE(sat) (V) 6 104 0.01 0.01 0.03 Collector output capacitance Cob (pF) 5 IC/IB=10 30 Collector to emitter voltage VCE (V) 100 10 ICP 3 IC t=1ms DC 1 0.3 0.1 0.03 1 0.01 0.01 1 3 10 30 100 300 1000 Collector to base voltage VCB (V) 2 4 100 0 1 2 3 4 5 6 7 Collector current IC (A) 8 1 3 10 30 100 300 1000 Collector to emitter voltage VCE (V) Power Transistors 2SD2000 Rth(t) — t Thermal resistance Rth(t) (˚C/W) 10000 Note: Rth was measured at Ta=25˚C and under natural convection. (1) Without heat sink (2) With a 100 × 100 × 2mm Al heat sink 1000 100 (1) 10 (2) 1 0.1 10–4 10–3 10–2 10–1 1 10 102 103 104 Time t (s) 3