BD539, BD539A, BD539B, BD539C, BD539D

BD539, BD539A, BD539B, BD539C, BD539D
NPN SILICON POWER TRANSISTORS
Designed for Complementary Use with the
BD540 Series
TO-220 PACKAGE
(TOP VIEW)
45 W at 25°C Case Temperature
5 A Continuous Collector Current
Up to 120 V VCEO rating
This series is obsolete and
not recommended for new designs.
B
1
C
2
E
3
Pin 2 is in electrical contact with the mounting base.
MDTRACA
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
RATING
SYMBOL
Collector-base voltage
E
T
E
L
O
S
B
O
BD539B
BD539C
V CBO
BD539D
BD539
Collector-emitter voltage (see Note 1)
Emitter-base voltage
Continuous collector current
BD539A
BD539B
BD539C
BD539D
UNIT
40
BD539
BD539A
VALUE
V CEO
VEBO
IC
60
80
100
V
120
40
60
80
100
120
V
5
V
5
A
Continuous device dissipation at (or below) 25°C case temperature (see Note 2)
Ptot
45
W
Operating free air temperature range
TA
-65 to +150
°C
Tstg
-65 to +150
Continuous device dissipation at (or below) 25°C free air temperature (see Note 3)
Operating junction temperature range
Storage temperature range
Lead temperature 3.2 mm from case for 10 seconds
Ptot
Tj
TL
2
-65 to +150
260
W
°C
°C
°C
NOTES: 1. These values apply when the base-emitter diode is open circuited.
2. Derate linearly to 150°C case temperature at the rate of 0.36 W/°C.
3. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C.
JUNE 1973 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
1
BD539, BD539A, BD539B, BD539C, BD539D
NPN SILICON POWER TRANSISTORS
electrical characteristics at 25°C case temperature
PARAMETER
V(BR)CEO
ICES
ICEO
IEBO
hFE
VCE(sat)
VBE(on)
hfe
|hfe |
Collector-emitter
breakdown voltage
Collector-emitter
cut-off current
Collector cut-off
current
Emitter cut-off
current
Forward current
transfer ratio
Collector-emitter
saturation voltage
Base-emitter
voltage
Small signal forward
current transfer ratio
Small signal forward
current transfer ratio
TEST CONDITIONS
IC = 30 mA
MIN
IB = 0
(see Note 4)
BD539
40
BD539A
60
BD539B
80
BD539C
100
BD539D
120
TYP
MAX
V
VCE = 40 V
VBE = 0
BD539
0.2
VCE = 60 V
VBE = 0
BD539A
0.2
VCE = 80 V
VBE = 0
BD539B
0.2
VCE = 100 V
VBE = 0
BD539C
0.2
VCE = 120 V
VBE = 0
BD539D
0.2
VCE = 30 V
IB = 0
BD539/539A
0.3
VCE = 60 V
IB = 0
BD539B/539C
0.3
VCE = 90 V
IB = 0
BD539D
0.3
VEB =
5V
IC = 0
VCE =
4V
IC = 0.5 A
VCE =
4V
IC =
1
4V
IC =
3A
IB = 125 mA
IC =
1A
IB = 375 mA
IC =
3A
IB =
1A
IC =
5A
VCE =
4V
IC =
3A
mA
mA
mA
40
1A
(see Notes 4 and 5)
30
E
T
E
L
O
S
B
O
VCE =
UNIT
12
0.25
(see Notes 4 and 5)
0.8
(see Notes 4 and 5)
VCE = 10 V
IC = 0.5 A
f = 1 kHz
20
VCE = 10 V
IC = 0.5 A
f = 1 MHz
3
V
1.5
1.25
V
NOTES: 4. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%.
5. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
thermal characteristics
MAX
UNIT
RθJC
Junction to case thermal resistance
PARAMETER
MIN
TYP
2.78
°C/W
RθJA
Junction to free air thermal resistance
62.5
°C/W
MAX
UNIT
resistive-load-switching characteristics at 25°C case temperature
PARAMETER
†
TEST CONDITIONS
†
MIN
ton
Turn-on time
IC = 1 A
IB(on) = 0.1 A
IB(off) = -0.1 A
toff
Turn-off time
VBE(off) = -4.3 V
RL = 30 Ω
tp = 20 µs, dc ≤ 2%
0.5
µs
2
µs
Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
2
TYP
JUNE 1973 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
BD539, BD539A, BD539B, BD539C, BD539D
NPN SILICON POWER TRANSISTORS
TYPICAL CHARACTERISTICS
TYPICAL DC CURRENT GAIN
vs
COLLECTOR CURRENT
VCE = 4 V
tp = 300 µs, duty cycle < 2%
TC = 25°C
TC = 80°C
100
10
0·01
0·1
TCS631AB
10
VCE(sat) - Collector-Emitter Saturation Voltage - V
TCS631AH
1000
hFE - DC Current Gain
COLLECTOR-EMITTER SATURATION VOLTAGE
vs
BASE CURRENT
1·0
0·1
IC =
IC =
IC =
IC =
100 mA
300 mA
1A
3A
E
T
E
L
O
S
B
O
1·0
10
0·01
0·1
IC - Collector Current - A
1·0
10
100
1000
IB - Base Current - mA
Figure 1.
Figure 2.
BASE-EMITTER VOLTAGE
vs
COLLECTOR CURRENT
1·0
TCS631AC
VBE - Base-Emitter Voltage - V
VCE = 4 V
TC = 25°C
0·9
0·8
0·7
0·6
0·5
0·01
0·1
1·0
10
IC - Collector Current - A
Figure 3.
JUNE 1973 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
3
BD539, BD539A, BD539B, BD539C, BD539D
NPN SILICON POWER TRANSISTORS
MAXIMUM SAFE OPERATING REGIONS
MAXIMUM FORWARD-BIAS
SAFE OPERATING AREA
IC - Collector Current - A
10
SAS631AI
1·0
0·1
BD539
BD539A
BD539B
BD539C
BD539D
E
T
E
L
O
S
B
O
0·01
1·0
10
100
1000
VCE - Collector-Emitter Voltage - V
Figure 4.
THERMAL INFORMATION
MAXIMUM POWER DISSIPATION
vs
CASE TEMPERATURE
TIS631AC
Ptot - Maximum Power Dissipation - W
50
40
30
20
10
0
0
25
50
75
100
125
150
TC - Case Temperature - °C
Figure 5.
4
JUNE 1973 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
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