BDW93, BDW93A, BDW93B, BDW93C NPN SILICON POWER DARLINGTONS ● Designed for Complementary Use with BDW94, BDW94A, BDW94B and BDW94C ● 80 W at 25°C Case Temperature ● 12 A Continuous Collector Current ● Minimum hFE of 750 at 3V, 5 A This series is obsolete and not recommended for new designs. TO-220 PACKAGE (TOP VIEW) B 1 C 2 E 3 Pin 2 is in electrical contact with the mounting base. MDTRACA absolute maximum ratings at 25°C case temperature (unless otherwise noted) RATING SYMBOL BDW93 Collector-base voltage (IE = 0) Collector-emitter voltage (IB = 0) BDW93A V CBO 80 BDW93C 100 45 BDW93B V CEO BDW93C Emitter-base voltage 60 BDW93 BDW93A UNIT 45 E T E L O S B O BDW93B VALUE 60 80 V V 100 VEBO 5 IC 12 A IB 0.3 A Continuous device dissipation at (or below) 25°C case temperature (see Note 1) Ptot 80 W Continuous device dissipation at (or below) 25°C free air temperature (see Note 2) Ptot 2 W Continuous collector current Continuous base current Operating junction temperature range Storage temperature range Operating free-air temperature range V Tj -65 to +150 °C Tstg -65 to +150 °C TA -65 to +150 °C NOTES: 1. Derate linearly to 150°C case temperature at the rate of 0.64 W/°C. 2. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C. SEPTEMBER 1993 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. 1 BDW93, BDW93A, BDW93B, BDW93C NPN SILICON POWER DARLINGTONS electrical characteristics at 25°C case temperature (unless otherwise noted) PARAMETER V(BR)CEO ICEO ICBO IEBO hFE VCE(sat) VBE(sat) VEC Collector-emitter TEST CONDITIONS MIN BDW93 45 BDW93A 60 BDW93B 80 BDW93C 100 TYP MAX V IC = 100 mA IB = 0 VCB = 40 V IB = 0 BDW93 1 Collector-emitter VCB = 60 V IB = 0 BDW93A 1 cut-off current VCB = 80 V IB = 0 BDW93B 1 breakdown voltage (see Note 3) VCB = 80 V IB = 0 BDW93C VCB = 45 V IE = 0 BDW93 0.1 VCB = 60 V IE = 0 BDW93A 0.1 VCB = 80 V IE = 0 BDW93B 0.1 Collector cut-off VCB = 100 V IE = 0 BDW93C 0.1 current VCB = 45 V IE = 0 TC = 150°C BDW93 5 VCB = 60 V IE = 0 TC = 150°C BDW93A 5 VCB = 80 V IE = 0 TC = 150°C BDW93B 5 VCB = 100 V IE = 0 TC = 150°C BDW93C 5 VEB = 5V IC = 0 VCE = 3V IC = VCE = 3V IC = 10 A VCE = 3V IC = 5A 20 mA IC = 5A Emitter cut-off current Forward current transfer ratio Collector-emitter saturation voltage Base-emitter saturation voltage Parallel diode forward voltage IB = 100 mA IC = 10 A IB = IC = 20 mA IB = 100 mA 5A IC = 10 A mA 1 E T E L O S B O IB = 3A UNIT 2 mA mA 1000 (see Notes 3 and 4) 100 750 20000 2 (see Notes 3 and 4) 3 2.5 (see Notes 3 and 4) 4 IE = 5A IB = 0 2 IE = 10 A IB = 0 4 V V V NOTES: 3. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%. 4. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts. thermal characteristics MAX UNIT RθJC Junction to case thermal resistance PARAMETER MIN 1.56 °C/W RθJA Junction to free air thermal resistance 62.5 °C/W 2 TYP SEPTEMBER 1993 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. BDW93, BDW93A, BDW93B, BDW93C NPN SILICON POWER DARLINGTONS TYPICAL CHARACTERISTICS TYPICAL DC CURRENT GAIN vs COLLECTOR CURRENT VCE(sat) - Collector-Emitter Saturation Voltage - V TCS130AE 50000 hFE - Typical DC Current Gain COLLECTOR-EMITTER SATURATION VOLTAGE vs COLLECTOR CURRENT TC = -40°C TC = 25°C TC = 100°C 10000 1000 1·0 tp = 300 µs, duty cycle < 2% IB = I C / 100 2·5 2·0 1·5 1·0 E T E L O S B O VCE = 3 V tp = 300 µs, duty cycle < 2% 100 0·5 TCS130AG 3·0 10 0·5 20 0 0·5 1·0 IC - Collector Current - A TC = -40°C TC = 25°C TC = 100°C 10 20 IC - Collector Current - A Figure 1. Figure 2. BASE-EMITTER SATURATION VOLTAGE vs COLLECTOR CURRENT TCS130AI VBE(sat) - Base-Emitter Saturation Voltage - V 3·0 2·5 TC = -40°C TC = 25°C TC = 100°C 2·0 1·5 1·0 IB = IC / 100 tp = 300 µs, duty cycle < 2% 0·5 0·5 1·0 10 20 IC - Collector Current - A Figure 3. SEPTEMBER 1993 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. 3 BDW93, BDW93A, BDW93B, BDW93C NPN SILICON POWER DARLINGTONS THERMAL INFORMATION MAXIMUM POWER DISSIPATION vs CASE TEMPERATURE TIS130AA Ptot - Maximum Power Dissipation - W 100 80 60 40 20 E T E L O S B O 0 0 25 50 75 100 125 150 TC - Case Temperature - °C Figure 4. 4 SEPTEMBER 1993 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice.