BDW93, BDW93A, BDW93B, BDW93C

BDW93, BDW93A, BDW93B, BDW93C
NPN SILICON POWER DARLINGTONS
●
Designed for Complementary Use with
BDW94, BDW94A, BDW94B and BDW94C
●
80 W at 25°C Case Temperature
●
12 A Continuous Collector Current
●
Minimum hFE of 750 at 3V, 5 A
This series is obsolete and
not recommended for new designs.
TO-220 PACKAGE
(TOP VIEW)
B
1
C
2
E
3
Pin 2 is in electrical contact with the mounting base.
MDTRACA
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
RATING
SYMBOL
BDW93
Collector-base voltage (IE = 0)
Collector-emitter voltage (IB = 0)
BDW93A
V CBO
80
BDW93C
100
45
BDW93B
V CEO
BDW93C
Emitter-base voltage
60
BDW93
BDW93A
UNIT
45
E
T
E
L
O
S
B
O
BDW93B
VALUE
60
80
V
V
100
VEBO
5
IC
12
A
IB
0.3
A
Continuous device dissipation at (or below) 25°C case temperature (see Note 1)
Ptot
80
W
Continuous device dissipation at (or below) 25°C free air temperature (see Note 2)
Ptot
2
W
Continuous collector current
Continuous base current
Operating junction temperature range
Storage temperature range
Operating free-air temperature range
V
Tj
-65 to +150
°C
Tstg
-65 to +150
°C
TA
-65 to +150
°C
NOTES: 1. Derate linearly to 150°C case temperature at the rate of 0.64 W/°C.
2. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C.
SEPTEMBER 1993 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
1
BDW93, BDW93A, BDW93B, BDW93C
NPN SILICON POWER DARLINGTONS
electrical characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER
V(BR)CEO
ICEO
ICBO
IEBO
hFE
VCE(sat)
VBE(sat)
VEC
Collector-emitter
TEST CONDITIONS
MIN
BDW93
45
BDW93A
60
BDW93B
80
BDW93C
100
TYP
MAX
V
IC = 100 mA
IB = 0
VCB = 40 V
IB = 0
BDW93
1
Collector-emitter
VCB = 60 V
IB = 0
BDW93A
1
cut-off current
VCB = 80 V
IB = 0
BDW93B
1
breakdown voltage
(see Note 3)
VCB = 80 V
IB = 0
BDW93C
VCB = 45 V
IE = 0
BDW93
0.1
VCB = 60 V
IE = 0
BDW93A
0.1
VCB = 80 V
IE = 0
BDW93B
0.1
Collector cut-off
VCB = 100 V
IE = 0
BDW93C
0.1
current
VCB = 45 V
IE = 0
TC = 150°C
BDW93
5
VCB = 60 V
IE = 0
TC = 150°C
BDW93A
5
VCB = 80 V
IE = 0
TC = 150°C
BDW93B
5
VCB = 100 V
IE = 0
TC = 150°C
BDW93C
5
VEB =
5V
IC = 0
VCE =
3V
IC =
VCE =
3V
IC = 10 A
VCE =
3V
IC =
5A
20 mA
IC =
5A
Emitter cut-off
current
Forward current
transfer ratio
Collector-emitter
saturation voltage
Base-emitter
saturation voltage
Parallel diode
forward voltage
IB = 100 mA
IC = 10 A
IB =
IC =
20 mA
IB = 100 mA
5A
IC = 10 A
mA
1
E
T
E
L
O
S
B
O
IB =
3A
UNIT
2
mA
mA
1000
(see Notes 3 and 4)
100
750
20000
2
(see Notes 3 and 4)
3
2.5
(see Notes 3 and 4)
4
IE =
5A
IB = 0
2
IE =
10 A
IB = 0
4
V
V
V
NOTES: 3. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%.
4. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
thermal characteristics
MAX
UNIT
RθJC
Junction to case thermal resistance
PARAMETER
MIN
1.56
°C/W
RθJA
Junction to free air thermal resistance
62.5
°C/W
2
TYP
SEPTEMBER 1993 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
BDW93, BDW93A, BDW93B, BDW93C
NPN SILICON POWER DARLINGTONS
TYPICAL CHARACTERISTICS
TYPICAL DC CURRENT GAIN
vs
COLLECTOR CURRENT
VCE(sat) - Collector-Emitter Saturation Voltage - V
TCS130AE
50000
hFE - Typical DC Current Gain
COLLECTOR-EMITTER SATURATION VOLTAGE
vs
COLLECTOR CURRENT
TC = -40°C
TC = 25°C
TC = 100°C
10000
1000
1·0
tp = 300 µs, duty cycle < 2%
IB = I C / 100
2·5
2·0
1·5
1·0
E
T
E
L
O
S
B
O
VCE = 3 V
tp = 300 µs, duty cycle < 2%
100
0·5
TCS130AG
3·0
10
0·5
20
0
0·5
1·0
IC - Collector Current - A
TC = -40°C
TC = 25°C
TC = 100°C
10
20
IC - Collector Current - A
Figure 1.
Figure 2.
BASE-EMITTER SATURATION VOLTAGE
vs
COLLECTOR CURRENT
TCS130AI
VBE(sat) - Base-Emitter Saturation Voltage - V
3·0
2·5
TC = -40°C
TC = 25°C
TC = 100°C
2·0
1·5
1·0
IB = IC / 100
tp = 300 µs, duty cycle < 2%
0·5
0·5
1·0
10
20
IC - Collector Current - A
Figure 3.
SEPTEMBER 1993 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
3
BDW93, BDW93A, BDW93B, BDW93C
NPN SILICON POWER DARLINGTONS
THERMAL INFORMATION
MAXIMUM POWER DISSIPATION
vs
CASE TEMPERATURE
TIS130AA
Ptot - Maximum Power Dissipation - W
100
80
60
40
20
E
T
E
L
O
S
B
O
0
0
25
50
75
100
125
150
TC - Case Temperature - °C
Figure 4.
4
SEPTEMBER 1993 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
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