BDW94, BDW94A, BDW94B, BDW94C

BDW94, BDW94A, BDW94B, BDW94C
PNP SILICON POWER DARLINGTONS
●
Designed for Complementary Use with
BDW93, BDW93A, BDW93B and BDW93C
●
80 W at 25°C Case Temperature
●
12 A Continuous Collector Current
●
Minimum hFE of 750 at 3V, 5 A
This series is obsolete and
not recommended for new designs.
TO-220 PACKAGE
(TOP VIEW)
B
1
C
2
E
3
Pin 2 is in electrical contact with the mounting base.
MDTRACA
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
RATING
SYMBOL
BDW94
Collector-base voltage (IE = 0)
Collector-emitter voltage (IB = 0)
BDW94A
V CBO
Continuous collector current
Continuous base current
-80
BDW94C
-100
-45
BDW94B
V CEO
BDW94C
Emitter-base voltage
-60
BDW94
BDW94A
UNIT
-45
E
T
E
L
O
S
B
O
BDW94B
VALUE
-60
-80
V
V
-100
VEBO
-5
V
IC
-12
A
IB
-0.3
A
Continuous device dissipation at (or below) 25°C case temperature (see Note 1)
Ptot
80
W
Continuous device dissipation at (or below) 25°C free air temperature (see Note 2)
Ptot
2
W
Tj
-65 to +150
°C
Tstg
-65 to +150
°C
TA
-65 to +150
°C
Operating junction temperature range
Storage temperature range
Operating free-air temperature range
NOTES: 1. Derate linearly to 150°C case temperature at the rate of 0.64 W/°C.
2. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C.
SEPTEMBER 1993 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
1
BDW94, BDW94A, BDW94B, BDW94C
PNP SILICON POWER DARLINGTONS
electrical characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER
V(BR)CEO
ICEO
ICBO
IEBO
hFE
VCE(sat)
VBE(sat)
VEC
Collector-emitter
TEST CONDITIONS
MIN
BDW94
-45
BDW94A
-60
BDW94B
-80
BDW94C
-100
TYP
MAX
V
IC = -100 mA
IB = 0
VCB = -40 V
IB = 0
BDW94
-1
Collector-emitter
VCB = -60 V
IB = 0
BDW94A
-1
cut-off current
VCB = -80 V
IB = 0
BDW94B
-1
breakdown voltage
(see Note 3)
VCB = -80 V
IB = 0
BDW94C
VCB = -45 V
IE = 0
BDW94
-0.1
VCB = -60 V
IE = 0
BDW94A
-0.1
VCB = -80 V
IE = 0
BDW94B
-0.1
Collector cut-off
VCB = -100 V
IE = 0
BDW94C
-0.1
current
VCB = -45 V
IE = 0
TC = 150°C
BDW94
-5
VCB = -60 V
IE = 0
TC = 150°C
BDW94A
-5
VCB = -80 V
IE = 0
TC = 150°C
BDW94B
-5
VCB = -100 V
IE = 0
TC = 150°C
BDW94C
-5
VEB =
-5 V
IC = 0
VCE =
-3 V
IC =
VCE =
-3 V
IC = -10 A
VCE =
-3 V
IC =
-5 A
-20 mA
IC =
-5 A
Emitter cut-off
current
Forward current
transfer ratio
Collector-emitter
saturation voltage
Base-emitter
saturation voltage
Parallel diode
forward voltage
IB = -100 mA
IC = -10 A
IB =
IC =
-20 mA
IB = -100 mA
-5 A
IC = -10 A
mA
-1
E
T
E
L
O
S
B
O
IB =
-3 A
UNIT
-2
mA
mA
1000
(see Notes 3 and 4)
100
750
20000
-2
(see Notes 3 and 4)
-3
-2.5
(see Notes 3 and 4)
-4
IE =
-5 A
IB = 0
-2
IE =
-10 A
IB = 0
-4
V
V
V
NOTES: 3. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%.
4. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
thermal characteristics
MAX
UNIT
RθJC
Junction to case thermal resistance
PARAMETER
MIN
1.56
°C/W
RθJA
Junction to free air thermal resistance
62.5
°C/W
2
TYP
SEPTEMBER 1993 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
BDW94, BDW94A, BDW94B, BDW94C
PNP SILICON POWER DARLINGTONS
TYPICAL CHARACTERISTICS
TYPICAL DC CURRENT GAIN
vs
COLLECTOR CURRENT
VCE(sat) - Collector-Emitter Saturation Voltage - V
TCS135AE
50000
hFE - Typical DC Current Gain
COLLECTOR-EMITTER SATURATION VOLTAGE
vs
COLLECTOR CURRENT
TC = -40°C
TC = 25°C
TC = 100°C
10000
1000
-1·0
TC = -40°C
TC = 25°C
-2·5 TC = 100°C
-2·0
-1·5
-1·0
E
T
E
L
O
S
B
O
VCE = -3 V
tp = 300 µs, duty cycle < 2%
100
-0·5
TCS135AG
-3·0
-10
-0·5
-20
tp = 300 µs, duty cycle < 2%
IB = IC / 100
0
-0·5
-1·0
IC - Collector Current - A
-10
-20
IC - Collector Current - A
Figure 1.
Figure 2.
BASE-EMITTER SATURATION VOLTAGE
vs
COLLECTOR CURRENT
TCS135AI
VBE(sat) - Base-Emitter Saturation Voltage - V
-3·0
-2·5
TC = -40°C
TC = 25°C
TC = 100°C
-2·0
-1·5
-1·0
IB = IC / 100
tp = 300 µs, duty cycle < 2%
-0·5
-0·5
-1·0
-10
-20
IC - Collector Current - A
Figure 3.
SEPTEMBER 1993 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
3
BDW94, BDW94A, BDW94B, BDW94C
PNP SILICON POWER DARLINGTONS
THERMAL INFORMATION
MAXIMUM POWER DISSIPATION
vs
CASE TEMPERATURE
TIS130AA
Ptot - Maximum Power Dissipation - W
100
80
60
40
20
E
T
E
L
O
S
B
O
0
0
25
50
75
100
125
150
TC - Case Temperature - °C
Figure 4.
4
SEPTEMBER 1993 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
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