BDX34, BDX34A, BDX34B, BDX34C, BDX34D

BDX34, BDX34A, BDX34B, BDX34C, BDX34D
PNP SILICON POWER DARLINGTONS
●
Designed for Complementary Use with
BDX33, BDX33A, BDX33B, BDX33C and
BDX33D
●
70 W at 25°C Case Temperature
●
10 A Continuous Collector Current
●
Minimum hFE of 750 at 3V, 3 A
This series is obsolete and
not recommended for new designs.
TO-220 PACKAGE
(TOP VIEW)
B
1
C
2
E
3
Pin 2 is in electrical contact with the mounting base.
MDTRACA
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
RATING
SYMBOL
BDX34A
E
T
E
L
O
S
B
O
BDX34B
V CBO
BDX34D
-120
BDX34
-45
BDX34B
V CEO
BDX34D
Continuous collector current
Continuous base current
-80
-100
BDX34C
Emitter-base voltage
-60
BDX34C
BDX34A
Collector-emitter voltage (IB = 0)
UNIT
-45
BDX34
Collector-base voltage (IE = 0)
VALUE
V
-60
-80
V
-100
-120
VEBO
-5
V
IC
-10
A
IB
-0.3
A
Continuous device dissipation at (or below) 25°C case temperature (see Note 1)
Ptot
70
W
Continuous device dissipation at (or below) 25°C free air temperature (see Note 2)
Ptot
2
W
Operating free air temperature range
TJ
-65 to +150
°C
Tstg
-65 to +150
°C
TA
-65 to +150
°C
Storage temperature range
Operating free-air temperature range
NOTES: 1. Derate linearly to 150°C case temperature at the rate of 0.56 W/°C.
2. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C.
AUGUST 1993 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
1
BDX34, BDX34A, BDX34B, BDX34C, BDX34D
PNP SILICON POWER DARLINGTONS
electrical characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER
V(BR)CEO
ICEO
ICBO
IEBO
hFE
VBE(on)
Collector-emitter
breakdown voltage
TEST CONDITIONS
IC = -100 mA
VEC
(see Note 3)
-45
BDX34A
-60
BDX34B
-80
BDX34C
-100
BDX34D
-120
TYP
MAX
IB = 0
BDX34
-0.5
VCE = -30 V
IB = 0
BDX34A
-0.5
VCE = -40 V
IB = 0
BDX34B
-0.5
VCE = -50 V
IB = 0
BDX34C
-0.5
Collector-emitter
VCE = -60 V
IB = 0
BDX34D
-0.5
cut-off current
VCE = -30 V
IB = 0
TC = 100°C
BDX34
-10
VCE = -30 V
IB = 0
TC = 100°C
BDX34A
-10
VCE = -40 V
IB = 0
TC = 100°C
BDX34B
-10
VCE = -50 V
IB = 0
TC = 100°C
BDX34C
-10
VCE = -60 V
IB = 0
TC = 100°C
BDX34D
-10
VCB = -45 V
IE = 0
BDX34
-1
VCB = -60 V
IE = 0
BDX34A
-1
Collector cut-off
current
Emitter cut-off
current
Forward current
transfer ratio
Base-emitter
voltage
E
T
E
L
O
S
B
O
VCB = -80 V
IE = 0
BDX34B
-1
VCB = -100 V
IE = 0
BDX34C
-1
VCB = -120 V
IE = 0
BDX34D
-1
VCB = -45 V
IE = 0
TC = 100°C
BDX34
-5
VCB = -60 V
IE = 0
TC = 100°C
BDX34A
-5
VCB = -80 V
IE = 0
TC = 100°C
BDX34B
-5
VCB = -100 V
IE = 0
TC = 100°C
BDX34C
-5
VCB = -120 V
IE = 0
TC = 100°C
BDX34D
-5
VEB =
-5 V
IC = 0
VCE =
-3 V
IC = -4 A
BDX34
750
VCE =
-3 V
IC = -4 A
BDX34A
750
VCE =
-3 V
IC = -3 A
BDX34B
750
VCE =
-3 V
IC = -3 A
BDX34C
750
VCE =
-3 V
IC = -3 A
BDX34D
750
VCE =
-3 V
IC = -4 A
BDX34
-2.5
VCE =
-3 V
IC = -4 A
BDX34A
-2.5
VCE =
-3 V
IC = -3 A
BDX34B
-2.5
VCE =
-3 V
IC = -3 A
BDX34C
-2.5
Collector-emitter
saturation voltage
Parallel diode
forward voltage
(see Notes 3 and 4)
(see Notes 3 and 4)
-10
-3 V
IC = -3 A
BDX34D
-2.5
IB =
-8 mA
IC = -4 A
BDX34
-2.5
IB =
-8 mA
IC = -4 A
BDX34A
-2.5
IB =
-6 mA
IC = -3 A
BDX34B
-2.5
IB =
-6 mA
IC = -3 A
BDX34C
-2.5
IB =
-6 mA
IC = -3 A
BDX34D
-2.5
IE =
-8 A
(see Notes 3 and 4)
IB = 0
UNIT
V
VCE = -30 V
VCE =
VCE(sat)
IB = 0
MIN
BDX34
-4
mA
mA
mA
V
V
V
NOTES: 3. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%.
4. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
2
AUGUST 1993 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
BDX34, BDX34A, BDX34B, BDX34C, BDX34D
PNP SILICON POWER DARLINGTONS
thermal characteristics
PARAMETER
MIN
TYP
MAX
UNIT
RθJC
Junction to case thermal resistance
1.78
°C/W
RθJA
Junction to free air thermal resistance
62.5
°C/W
MAX
UNIT
resistive-load-switching characteristics at 25°C case temperature
PARAMETER
†
TEST CONDITIONS
†
MIN
TYP
ton
Turn-on time
IC = -3 A
IB(on) = -12 mA
IB(off) = 12 mA
1
µs
toff
Turn-off time
VBE(off) = 3.5 V
RL = 10 Ω
tp = 20 µs, dc ≤ 2%
5
µs
Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
E
T
E
L
O
S
B
O
AUGUST 1993 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
3
BDX34, BDX34A, BDX34B, BDX34C, BDX34D
PNP SILICON POWER DARLINGTONS
TYPICAL CHARACTERISTICS
TYPICAL DC CURRENT GAIN
vs
COLLECTOR CURRENT
VCE(sat) - Collector-Emitter Saturation Voltage - V
TCS135AF
50000
hFE - Typical DC Current Gain
COLLECTOR-EMITTER SATURATION VOLTAGE
vs
COLLECTOR CURRENT
TC = -40°C
TC = 25°C
TC = 100°C
10000
1000
-1·0
tp = 300 µs, duty cycle < 2%
IB = I C / 100
-1·5
-1·0
E
T
E
L
O
S
B
O
VCE = -3 V
tp = 300 µs, duty cycle < 2%
100
-0·5
TCS135AH
-2·0
-10
-0·5
-0·5
IC - Collector Current - A
-1·0
TC = -40°C
TC = 25°C
TC = 100°C
-10
IC - Collector Current - A
Figure 1.
Figure 2.
BASE-EMITTER SATURATION VOLTAGE
vs
COLLECTOR CURRENT
TCS135AJ
VBE(sat) - Base-Emitter Saturation Voltage - V
-3·0
-2·5
TC = -40°C
TC = 25°C
TC = 100°C
-2·0
-1·5
-1·0
IB = IC / 100
tp = 300 µs, duty cycle < 2%
-0·5
-0·5
-1·0
-10
IC - Collector Current - A
Figure 3.
4
AUGUST 1993 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
BDX34, BDX34A, BDX34B, BDX34C, BDX34D
PNP SILICON POWER DARLINGTONS
THERMAL INFORMATION
MAXIMUM POWER DISSIPATION
vs
CASE TEMPERATURE
TIS130AB
Ptot - Maximum Power Dissipation - W
80
70
60
50
40
30
20
E
T
E
L
O
S
B
O
10
0
0
25
50
75
100
125
150
TC - Case Temperature - °C
Figure 4.
AUGUST 1993 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
5
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