BUV48, BUV48A NPN SILICON POWER TRANSISTORS ● Rugged Triple-Diffused Planar Construction ● 15 A Continuous Collector Current ● 1000 Volt Blocking Capability SOT-93 PACKAGE (TOP VIEW) B 1 C 2 E 3 Pin 2 is in electrical contact with the mounting base. MDTRAAA absolute maximum ratings at 25°C case temperature (unless otherwise noted) RATING Collector-emitter voltage (VBE = 0 V) Continuous collector current Peak collector current (see Note 1) Continuous base current BUV48 BUV48A VCES E T E L O S B O Collector-emitter voltage (RBE = 10 Ω) Collector-emitter voltage (IB = 0) SYMBOL BUV48 BUV48A BUV48 BUV48A VCER VCEO VALUE 850 1000 850 1000 400 450 UNIT V V V IC 15 ICM 30 A A IB 4 A A IBM 20 Non repetitive accidental peak surge current ICSM 55 A Continuous device dissipation at (or below) 25°C case temperature Ptot 125 W Tj -65 to +150 °C Tstg -65 to +150 °C Peak base current Operating junction temperature range Storage temperature range NOTE 1: This value applies for tp ≤ 2 ms, duty cycle ≤ 2%. AUGUST 1978 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. 1 BUV48, BUV48A NPN SILICON POWER TRANSISTORS electrical characteristics at 25°C case temperature (unless otherwise noted) PARAMETER VCEO(sus) ICES ICER IEBO VEBO VCE(sat) VBE(sat) ft Cob Collector-emitter sustaining voltage TEST CONDITIONS IC = 200 mA L = 25 mH MIN (see Note 2) BUV48 400 BUV48A 450 TYP MAX V VCE = 850 V VBE = 0 BUV48 0.2 Collector-emitter VCE = 1000 V VBE = 0 BUV48A 0.2 cut-off current VCE = 850 V VBE = 0 TC = 125°C BUV48 2.0 TC = 125°C VCE = 1000 V VBE = 0 BUV48A 2.0 VCE = 850 V RBE = 10 Ω BUV48 0.5 Collector-emitter VCE = 1000 V RBE = 10 Ω BUV48A 0.5 cut-off current VCE = 850 V RBE = 10 Ω TC = 125°C BUV48 4.0 VCE = 1000 V RBE = 10 Ω TC = 125°C BUV48A 4.0 VEB = 5V IC = 0 IE = 50 mA IC = 0 Emitter cut-off current Emitter-base breakdown voltage 7 30 V IB = 2A IC = 10 A BUV48 1.5 3A IC = 15 A BUV48 5.0 saturation voltage IB = 1.6 A IC = 8A BUV48A 1.5 saturation voltage Current gain bandwidth product Output capacitance E T E L O S B O mA mA IB = Base-emitter mA 1 Collector-emitter (see Notes 3 and 4) UNIT V IB = 2.4 A IC = 12 A BUV48A 5.0 IB = 2A IC = 10 A BUV48 1.6 IB = 1.6 A IC = 8A BUV48A 1.6 VCE = 10 V IC = 0.5 A f = 1 MHz 10 MHz VCB = 20 V IC = 0 f = 1 MHz 150 pF (see Notes 3 and 4) V NOTES: 2. Inductive loop switching measurement. 3. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%. 4. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts. thermal characteristics PARAMETER RθJC MIN TYP Junction to case thermal resistance MAX UNIT 1 °C/W MAX UNIT resistive-load-switching characteristics at 25°C case temperature PARAMETER † ton Turn on time ts Storage time tf Fall time ton Turn on time ts Storage time tf Fall time TEST CONDITIONS † MIN IC = 10 A VCC = 150 V BUV48 IB(on) = 2 A IB(off) = -2 A (see Figures 1 and 2) IC = 8 A VCC = 150 V BUV48A IB(on) = 1.6 A IB(off) = -1.6 A (see Figures 1 and 2) TYP 1.0 µs 3.0 µs 0.8 µs 1.0 µs 3.0 µs 0.8 µs MAX UNIT Voltage and current values shown are nominal; exact values vary slightly with transistor parameters. inductive-load-switching characteristics at 100°C case temperature PARAMETER TEST CONDITIONS † tsv Voltage storage time IC = 10 A IB(on) = 2 A tfi Current fall time VBE(off) = -5 V (see Figures 3 and 4) tsv Voltage storage time IC = 8 A IB(on) = 1.6 A tfi Current fall time VBE(off) = -5 V (see Figures 3 and 4) MIN BUV48 BUV48A 2 TYP 4.0 µs 0.4 µs 4.0 µs 0.4 µs AUGUST 1978 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. BUV48, BUV48A NPN SILICON POWER TRANSISTORS PARAMETER MEASUREMENT INFORMATION +25 V BD135 680 µF 120 Ω T V1 100 Ω 100 µF 47 Ω tp V cc V=CC250 V TUT 15 Ω V1 100 Ω 680 µF 82 Ω BD136 tp = 20 µs Duty cycle = 1% V1 = 15 V, Source Impedance = 50 Ω Figure 1. Resistive-Load Switching Test Circuit E T E L O S B O C 90% 90% E IC A - B = td B - C = tr E - F = tf D - E = ts A - C = ton D - F = t off B 10% 10% 90% D F 0% dIB ≥ 2 A/µs dt IB I B(on) A 10% 0% I B(off) Figure 2. Resistive-Load Switching Waveforms AUGUST 1978 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. 3 BUV48, BUV48A NPN SILICON POWER TRANSISTORS PARAMETER MEASUREMENT INFORMATION 33 Ω +5V D45H11 BY205-400 33 Ω BY205-400 RB (on) 1 pF 180 µH V Gen 1 kΩ 68 Ω 0.02 µF vcc 2N2222 BY205-400 Vclamp = 400 V TUT 1 kΩ +5V E T E L O S B O 270 Ω BY205-400 5X BY205-400 1 kΩ 2N2904 Adjust pw to obtain IC D44H11 47 Ω For IC < 6 A VCC = 50 V For IC ≥ 6 A VCC = 100 V V 100 Ω BE(off) Figure 3. Inductive-Load Switching Test Circuit I B(on) A (90%) IB A - B = tsv B - C = trv D - E = tfi E - F = tti Base Current C B - E = txo V CE B 90% 10% Collector Voltage D (90%) E (10%) I C(on) Collector Current F (2%) NOTES: A. Waveforms are monitored on an oscilloscope with the following characteristics: t r < 15 ns, Rin > 10 Ω, C in < 11.5 pF. B. Resistors must be noninductive types. Figure 4. Inductive-Load Switching Waveforms 4 AUGUST 1978 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. BUV48, BUV48A NPN SILICON POWER TRANSISTORS TYPICAL CHARACTERISTICS TYPICAL DC CURRENT GAIN vs COLLECTOR CURRENT VCE(sat) - Collector-Emitter Saturation Voltage - V TCP765AA 100 TC = 125°C TC = 25°C TC = -65°C VCE = 5 V hFE - Typical DC Current Gain COLLECTOR-EMITTER SATURATION VOLTAGE vs BASE CURRENT 10 1·0 0·1 TCP765AB 5·0 IC = 5 A IC = 10 A IC = 15 A 4·0 TC = 25°C 3·0 2·0 1·0 E T E L O S B O 1·0 10 0 0·1 20 1·0 IC - Collector Current - A IB - Base Current - A Figure 5. Figure 6. 4·0 BASE-EMITTER SATURATION VOLTAGE vs BASE CURRENT TCP765AI IC = 5 A IC = 10 A IC = 15 A TC = 100°C 3·0 2·0 1·0 0 0·1 1·5 IC = 15 A 1·4 1·3 IC = 10 A 1·2 1·1 1·0 IC = 5 A 0·9 0·8 1·0 IB - Base Current - A Figure 7. TCP765AC 1·6 VBE(sat) - Base-Emitter Saturation Voltage - V VCE(sat) - Collector-Emitter Saturation Voltage - V COLLECTOR-EMITTER SATURATION VOLTAGE vs BASE CURRENT 5·0 10 10 0 1 2 3 4 5 6 IB - Base Current - A Figure 8. AUGUST 1978 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. 5 BUV48, BUV48A NPN SILICON POWER TRANSISTORS TYPICAL CHARACTERISTICS COLLECTOR CUT-OFF CURRENT vs CASE TEMPERATURE TCP765AD ICES - Collector Cut-off Current - µA 4·0 1·0 BUV48A VCE = 1000 V 0·1 BUV48 VCE = 850 V E T E L O S B O 0·01 -80 -60 -40 -20 0 20 40 60 80 100 120 140 TC - Case Temperature - °C Figure 9. MAXIMUM SAFE OPERATING REGIONS MAXIMUM FORWARD-BIAS SAFE OPERATING AREA IC - Collector Current - A 100 SAP765AA 10 1·0 0.1 0·01 1·0 tp = 10 µs tp = 50 µs tp = 100 µs tp = 500 µs tp = 1 ms tp = 2 ms DC Operation BUV48 BUV48A 10 100 1000 VCE - Collector-Emitter Voltage - V Figure 10. 6 AUGUST 1978 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice.