BUV48, BUV48A

BUV48, BUV48A
NPN SILICON POWER TRANSISTORS
●
Rugged Triple-Diffused Planar Construction
●
15 A Continuous Collector Current
●
1000 Volt Blocking Capability
SOT-93 PACKAGE
(TOP VIEW)
B
1
C
2
E
3
Pin 2 is in electrical contact with the mounting base.
MDTRAAA
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
RATING
Collector-emitter voltage (VBE = 0 V)
Continuous collector current
Peak collector current (see Note 1)
Continuous base current
BUV48
BUV48A
VCES
E
T
E
L
O
S
B
O
Collector-emitter voltage (RBE = 10 Ω)
Collector-emitter voltage (IB = 0)
SYMBOL
BUV48
BUV48A
BUV48
BUV48A
VCER
VCEO
VALUE
850
1000
850
1000
400
450
UNIT
V
V
V
IC
15
ICM
30
A
A
IB
4
A
A
IBM
20
Non repetitive accidental peak surge current
ICSM
55
A
Continuous device dissipation at (or below) 25°C case temperature
Ptot
125
W
Tj
-65 to +150
°C
Tstg
-65 to +150
°C
Peak base current
Operating junction temperature range
Storage temperature range
NOTE
1: This value applies for tp ≤ 2 ms, duty cycle ≤ 2%.
AUGUST 1978 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
1
BUV48, BUV48A
NPN SILICON POWER TRANSISTORS
electrical characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER
VCEO(sus)
ICES
ICER
IEBO
VEBO
VCE(sat)
VBE(sat)
ft
Cob
Collector-emitter
sustaining voltage
TEST CONDITIONS
IC = 200 mA
L = 25 mH
MIN
(see Note 2)
BUV48
400
BUV48A
450
TYP
MAX
V
VCE = 850 V
VBE = 0
BUV48
0.2
Collector-emitter
VCE = 1000 V
VBE = 0
BUV48A
0.2
cut-off current
VCE = 850 V
VBE = 0
TC = 125°C
BUV48
2.0
TC = 125°C
VCE = 1000 V
VBE = 0
BUV48A
2.0
VCE = 850 V
RBE = 10 Ω
BUV48
0.5
Collector-emitter
VCE = 1000 V
RBE = 10 Ω
BUV48A
0.5
cut-off current
VCE = 850 V
RBE = 10 Ω
TC = 125°C
BUV48
4.0
VCE = 1000 V
RBE = 10 Ω
TC = 125°C
BUV48A
4.0
VEB =
5V
IC = 0
IE =
50 mA
IC = 0
Emitter cut-off
current
Emitter-base
breakdown voltage
7
30
V
IB =
2A
IC =
10 A
BUV48
1.5
3A
IC =
15 A
BUV48
5.0
saturation voltage
IB =
1.6 A
IC =
8A
BUV48A
1.5
saturation voltage
Current gain
bandwidth product
Output capacitance
E
T
E
L
O
S
B
O
mA
mA
IB =
Base-emitter
mA
1
Collector-emitter
(see Notes 3 and 4)
UNIT
V
IB =
2.4 A
IC =
12 A
BUV48A
5.0
IB =
2A
IC =
10 A
BUV48
1.6
IB =
1.6 A
IC =
8A
BUV48A
1.6
VCE =
10 V
IC = 0.5 A
f = 1 MHz
10
MHz
VCB =
20 V
IC = 0
f = 1 MHz
150
pF
(see Notes 3 and 4)
V
NOTES: 2. Inductive loop switching measurement.
3. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%.
4. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
thermal characteristics
PARAMETER
RθJC
MIN
TYP
Junction to case thermal resistance
MAX
UNIT
1
°C/W
MAX
UNIT
resistive-load-switching characteristics at 25°C case temperature
PARAMETER
†
ton
Turn on time
ts
Storage time
tf
Fall time
ton
Turn on time
ts
Storage time
tf
Fall time
TEST CONDITIONS
†
MIN
IC = 10 A
VCC = 150 V
BUV48
IB(on) = 2 A
IB(off) = -2 A
(see Figures 1 and 2)
IC = 8 A
VCC = 150 V
BUV48A
IB(on) = 1.6 A
IB(off) = -1.6 A
(see Figures 1 and 2)
TYP
1.0
µs
3.0
µs
0.8
µs
1.0
µs
3.0
µs
0.8
µs
MAX
UNIT
Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
inductive-load-switching characteristics at 100°C case temperature
PARAMETER
TEST CONDITIONS
†
tsv
Voltage storage time
IC = 10 A
IB(on) = 2 A
tfi
Current fall time
VBE(off) = -5 V
(see Figures 3 and 4)
tsv
Voltage storage time
IC = 8 A
IB(on) = 1.6 A
tfi
Current fall time
VBE(off) = -5 V
(see Figures 3 and 4)
MIN
BUV48
BUV48A
2
TYP
4.0
µs
0.4
µs
4.0
µs
0.4
µs
AUGUST 1978 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
BUV48, BUV48A
NPN SILICON POWER TRANSISTORS
PARAMETER MEASUREMENT INFORMATION
+25 V
BD135
680 µF
120 Ω
T
V1
100 Ω
100 µF
47 Ω
tp
V cc V=CC250 V
TUT
15 Ω
V1
100 Ω
680 µF
82 Ω
BD136
tp = 20 µs
Duty cycle = 1%
V1 = 15 V, Source Impedance = 50 Ω
Figure 1. Resistive-Load Switching Test Circuit
E
T
E
L
O
S
B
O
C
90%
90%
E
IC
A - B = td
B - C = tr
E - F = tf
D - E = ts
A - C = ton
D - F = t off
B
10%
10%
90%
D
F
0%
dIB
≥ 2 A/µs
dt
IB
I B(on)
A
10%
0%
I B(off)
Figure 2. Resistive-Load Switching Waveforms
AUGUST 1978 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
3
BUV48, BUV48A
NPN SILICON POWER TRANSISTORS
PARAMETER MEASUREMENT INFORMATION
33 Ω
+5V
D45H11
BY205-400
33 Ω
BY205-400
RB
(on)
1 pF
180 µH
V Gen
1 kΩ
68 Ω
0.02 µF
vcc
2N2222
BY205-400
Vclamp = 400 V
TUT
1 kΩ
+5V
E
T
E
L
O
S
B
O
270 Ω
BY205-400
5X BY205-400
1 kΩ
2N2904
Adjust pw to obtain IC
D44H11
47 Ω
For IC < 6 A
VCC = 50 V
For IC ≥ 6 A
VCC = 100 V
V
100 Ω
BE(off)
Figure 3. Inductive-Load Switching Test Circuit
I B(on)
A (90%)
IB
A - B = tsv
B - C = trv
D - E = tfi
E - F = tti
Base Current
C
B - E = txo
V
CE
B
90%
10%
Collector Voltage
D (90%)
E (10%)
I
C(on)
Collector Current
F (2%)
NOTES: A. Waveforms are monitored on an oscilloscope with the following characteristics: t r < 15 ns, Rin > 10 Ω, C in < 11.5 pF.
B. Resistors must be noninductive types.
Figure 4. Inductive-Load Switching Waveforms
4
AUGUST 1978 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
BUV48, BUV48A
NPN SILICON POWER TRANSISTORS
TYPICAL CHARACTERISTICS
TYPICAL DC CURRENT GAIN
vs
COLLECTOR CURRENT
VCE(sat) - Collector-Emitter Saturation Voltage - V
TCP765AA
100
TC = 125°C
TC = 25°C
TC = -65°C
VCE = 5 V
hFE - Typical DC Current Gain
COLLECTOR-EMITTER SATURATION VOLTAGE
vs
BASE CURRENT
10
1·0
0·1
TCP765AB
5·0
IC = 5 A
IC = 10 A
IC = 15 A
4·0
TC = 25°C
3·0
2·0
1·0
E
T
E
L
O
S
B
O
1·0
10
0
0·1
20
1·0
IC - Collector Current - A
IB - Base Current - A
Figure 5.
Figure 6.
4·0
BASE-EMITTER SATURATION VOLTAGE
vs
BASE CURRENT
TCP765AI
IC = 5 A
IC = 10 A
IC = 15 A
TC = 100°C
3·0
2·0
1·0
0
0·1
1·5
IC = 15 A
1·4
1·3
IC = 10 A
1·2
1·1
1·0
IC = 5 A
0·9
0·8
1·0
IB - Base Current - A
Figure 7.
TCP765AC
1·6
VBE(sat) - Base-Emitter Saturation Voltage - V
VCE(sat) - Collector-Emitter Saturation Voltage - V
COLLECTOR-EMITTER SATURATION VOLTAGE
vs
BASE CURRENT
5·0
10
10
0
1
2
3
4
5
6
IB - Base Current - A
Figure 8.
AUGUST 1978 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
5
BUV48, BUV48A
NPN SILICON POWER TRANSISTORS
TYPICAL CHARACTERISTICS
COLLECTOR CUT-OFF CURRENT
vs
CASE TEMPERATURE
TCP765AD
ICES - Collector Cut-off Current - µA
4·0
1·0
BUV48A
VCE = 1000 V
0·1
BUV48
VCE = 850 V
E
T
E
L
O
S
B
O
0·01
-80 -60 -40 -20
0
20
40
60
80 100 120 140
TC - Case Temperature - °C
Figure 9.
MAXIMUM SAFE OPERATING REGIONS
MAXIMUM FORWARD-BIAS
SAFE OPERATING AREA
IC - Collector Current - A
100
SAP765AA
10
1·0
0.1
0·01
1·0
tp =
10 µs
tp =
50 µs
tp = 100 µs
tp = 500 µs
tp =
1 ms
tp =
2 ms
DC Operation
BUV48
BUV48A
10
100
1000
VCE - Collector-Emitter Voltage - V
Figure 10.
6
AUGUST 1978 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
Similar pages