English/Chinese (simplified)

技术信息/TechnicalInformation
IGBT-模块
IGBT-modules
FB20R06W1E3
EasyPIM™模块采用第三代沟槽栅/场终止IGBT3和第三代发射极控制二极管带有温度检测NTC
EasyPIM™modulewithTrench/FieldstopIGBT3andEmitterControlled3diodeandNTC
初步数据/PreliminaryData
J
VCES = 600V
IC nom = 20A / ICRM = 40A
典型应用
• 辅助逆变器
• 空调
• 电机传动
TypicalApplications
• AuxiliaryInverters
• AirConditioning
• MotorDrives
电气特性
• 低开关损耗
• 沟槽栅IGBT3
• VCEsat带正温度系数
• 低VCEsat
ElectricalFeatures
• LowSwitchingLosses
• TrenchIGBT3
• VCEsatwithpositiveTemperatureCoefficient
• LowVCEsat
机械特性
• 低热阻的三氧化二铝(Al2O3衬底
• 紧凑型设计
• 焊接技术
• 集成的安装夹使安装坚固
MechanicalFeatures
• Al2O3SubstratewithLowThermalResistance
• Compactdesign
• SolderContactTechnology
• Rugged mounting due to integrated mounting
clamps
ModuleLabelCode
BarcodeCode128
DMX-Code
preparedby:DK
dateofpublication:2013-10-29
approvedby:MB
revision:2.1
ContentoftheCode
Digit
ModuleSerialNumber
ModuleMaterialNumber
ProductionOrderNumber
Datecode(ProductionYear)
Datecode(ProductionWeek)
1-5
6-11
12-19
20-21
22-23
ULapproved(E83335)
1
技术信息/TechnicalInformation
IGBT-模块
IGBT-modules
FB20R06W1E3
初步数据
PreliminaryData
IGBT,逆变器/IGBT,Inverter
最大额定值/MaximumRatedValues
集电极-发射极电压
Collector-emittervoltage
Tvj = 25°C
VCES
600
V
连续集电极直流电流
ContinuousDCcollectorcurrent
TC = 95°C, Tvj max = 175°C
TC = 25°C, Tvj max = 175°C
IC nom
IC
20
29
集电极重复峰值电流
Repetitivepeakcollectorcurrent
tP = 1 ms
ICRM
40
A
总功率损耗
Totalpowerdissipation
TC = 25°C, Tvj max = 175
Ptot
94,0
W
栅极-发射极峰值电压
Gate-emitterpeakvoltage
VGES
+/-20
V
特征值/CharacteristicValues
集电极-发射极饱和电压
Collector-emittersaturationvoltage
min.
IC = 20 A, VGE = 15 V
IC = 20 A, VGE = 15 V
IC = 20 A, VGE = 15 V
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
栅极阈值电压
Gatethresholdvoltage
IC = 0,29 mA, VCE = VGE, Tvj = 25°C
栅极电荷
Gatecharge
VCE sat
A
A
typ.
max.
1,55
1,70
1,80
2,00
V
V
V
VGEth
4,9
5,8
6,5
V
VGE = -15 V ... +15 V
QG
0,20
µC
内部栅极电阻
Internalgateresistor
Tvj = 25°C
RGint
0,0
Ω
输入电容
Inputcapacitance
f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V
Cies
1,10
nF
反向传输电容
Reversetransfercapacitance
f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V
Cres
0,034
nF
集电极-发射极截止电流
Collector-emittercut-offcurrent
VCE = 600 V, VGE = 0 V, Tvj = 25°C
ICES
1,0
mA
栅极-发射极漏电流
Gate-emitterleakagecurrent
VCE = 0 V, VGE = 20 V, Tvj = 25°C
IGES
400
nA
td on
0,02
0,02
0,02
µs
µs
µs
tr
0,013
0,016
0,017
µs
µs
µs
td off
0,12
0,14
0,15
µs
µs
µs
tf
0,07
0,095
0,10
µs
µs
µs
开通延迟时间(电感负载)
Turn-ondelaytime,inductiveload
IC = 20 A, VCE = 300 V
VGE = ±15 V
RGon = 18 Ω
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
上升时间(电感负载)
Risetime,inductiveload
IC = 20 A, VCE = 300 V
VGE = ±15 V
RGon = 18 Ω
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
关断延迟时间(电感负载)
Turn-offdelaytime,inductiveload
IC = 20 A, VCE = 300 V
VGE = ±15 V
RGoff = 18 Ω
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
下降时间(电感负载)
Falltime,inductiveload
IC = 20 A, VCE = 300 V
VGE = ±15 V
RGoff = 18 Ω
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
开通损耗能量(每脉冲)
Turn-onenergylossperpulse
IC = 20 A, VCE = 300 V, LS = 50 nH
Tvj = 25°C
VGE = ±15 V, di/dt = 1800 A/µs (Tvj = 150°C) Tvj = 125°C
RGon = 18 Ω
Tvj = 150°C
Eon
0,32
0,44
0,49
mJ
mJ
mJ
关断损耗能量(每脉冲)
Turn-offenergylossperpulse
IC = 20 A, VCE = 300 V, LS = 50 nH
Tvj = 25°C
VGE = ±15 V, du/dt = 4100 V/µs (Tvj = 150°C) Tvj = 125°C
RGoff = 18 Ω
Tvj = 150°C
Eoff
0,44
0,56
0,59
mJ
mJ
mJ
短路数据
SCdata
VGE ≤ 15 V, VCC = 360 V
VCEmax = VCES -LsCE ·di/dt
ISC
140
100
A
A
结-外壳热阻
Thermalresistance,junctiontocase
每个IGBT/perIGBT
RthJC
1,45
1,60 K/W
外壳-散热器热阻
Thermalresistance,casetoheatsink
每个IGBT/perIGBT
λPaste=1W/(m·K)/λgrease=1W/(m·K)
RthCH
1,25
K/W
在开关状态下温度
Temperatureunderswitchingconditions
Tvj op
-40
preparedby:DK
dateofpublication:2013-10-29
approvedby:MB
revision:2.1
2
tP ≤ 8 µs, Tvj = 25°C
tP ≤ 6 µs, Tvj = 150°C
150
°C
技术信息/TechnicalInformation
IGBT-模块
IGBT-modules
FB20R06W1E3
初步数据
PreliminaryData
二极管,逆变器/Diode,Inverter
最大额定值/MaximumRatedValues
反向重复峰值电压
Repetitivepeakreversevoltage
Tvj = 25°C
连续正向直流电流
ContinuousDCforwardcurrent
正向重复峰值电流
Repetitivepeakforwardcurrent
tP = 1 ms
I2t-值
I²t-value
VR = 0 V, tP = 10 ms, Tvj = 125°C
VR = 0 V, tP = 10 ms, Tvj = 150°C
VRRM 600
V
IF
20
A
IFRM
40
A
I²t
49,0
45,0
特征值/CharacteristicValues
min.
typ.
max.
1,60
1,55
1,50
2,00
A²s
A²s
正向电压
Forwardvoltage
IF = 20 A, VGE = 0 V
IF = 20 A, VGE = 0 V
IF = 20 A, VGE = 0 V
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
VF
反向恢复峰值电流
Peakreverserecoverycurrent
IF = 20 A, - diF/dt = 1800 A/µs (Tvj=150°C)
VR = 300 V
VGE = -15 V
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
IRM
34,0
38,0
40,0
A
A
A
恢复电荷
Recoveredcharge
IF = 20 A, - diF/dt = 1800 A/µs (Tvj=150°C)
VR = 300 V
VGE = -15 V
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
Qr
1,00
1,75
2,20
µC
µC
µC
反向恢复损耗(每脉冲)
Reverserecoveryenergy
IF = 20 A, - diF/dt = 1800 A/µs (Tvj=150°C)
VR = 300 V
VGE = -15 V
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
Erec
0,21
0,37
0,47
mJ
mJ
mJ
V
V
V
结-外壳热阻
Thermalresistance,junctiontocase
每个二极管/perdiode
RthJC
1,95
2,15 K/W
外壳-散热器热阻
Thermalresistance,casetoheatsink
每个二极管/perdiode
λPaste=1W/(m·K)/λgrease=1W/(m·K)
RthCH
1,35
K/W
在开关状态下温度
Temperatureunderswitchingconditions
Tvj op
-40
150
°C
二极管,整流器/Diode,Rectifier
最大额定值/MaximumRatedValues
反向重复峰值电压
Repetitivepeakreversevoltage
Tvj = 25°C
VRRM 800
V
最大正向均方根电流(每芯片)
MaximumRMSforwardcurrentperchip
TC = 80°C
IFRMSM 50
A
最大整流器输出均方根电流
MaximumRMScurrentatrectifieroutput
TC = 80°C
IRMSM 60
A
正向浪涌电流
Surgeforwardcurrent
tp = 10 ms, Tvj = 25°C
tp = 10 ms, Tvj = 150°C
IFSM
450
360
A
A
I2t-值
I²t-value
tp = 10 ms, Tvj = 25°C
tp = 10 ms, Tvj = 150°C
I²t
1000
640
A²s
A²s
特征值/CharacteristicValues
min.
typ.
max.
VF
0,85
V
Tvj = 150°C, VR = 800 V
IR
0,10
mA
结-外壳热阻
Thermalresistance,junctiontocase
每个二极管/perdiode
RthJC
0,95
1,05 K/W
外壳-散热器热阻
Thermalresistance,casetoheatsink
每个二极管/perdiode
λPaste=1W/(m·K)/λgrease=1W/(m·K)
RthCH
0,95
K/W
在开关状态下温度
Temperatureunderswitchingconditions
Tvj op
preparedby:DK
dateofpublication:2013-10-29
approvedby:MB
revision:2.1
正向电压
Forwardvoltage
Tvj = 150°C, IF = 20 A
反向电流
Reversecurrent
3
°C
技术信息/TechnicalInformation
IGBT-模块
IGBT-modules
FB20R06W1E3
初步数据
PreliminaryData
负温度系数热敏电阻/NTC-Thermistor
特征值/CharacteristicValues
min.
typ.
max.
R25
5,00
kΩ
∆R/R
-5
5
%
P25
20,0
mW
额定电阻值
Ratedresistance
TC = 25°C
R100偏差
DeviationofR100
TC = 100°C, R100 = 493 Ω
耗散功率
Powerdissipation
TC = 25°C
B-值
B-value
R2 = R25 exp [B25/50(1/T2 - 1/(298,15 K))]
B25/50
3375
K
B-值
B-value
R2 = R25 exp [B25/80(1/T2 - 1/(298,15 K))]
B25/80
3411
K
B-值
B-value
R2 = R25 exp [B25/100(1/T2 - 1/(298,15 K))]
B25/100
3433
K
根据应用手册标定
Specificationaccordingtothevalidapplicationnote.
模块/Module
绝缘测试电压
Isolationtestvoltage
RMS, f = 50 Hz, t = 1 min.
内部绝缘
Internalisolation
基本绝缘(class1,IEC61140)
basicinsulation(class1,IEC61140)
Al2O3
爬电距离
Creepagedistance
端子-散热片/terminaltoheatsink
端子-端子/terminaltoterminal
11,5
6,3
mm
电气间隙
Clearance
端子-散热片/terminaltoheatsink
端子-端子/terminaltoterminal
10,0
5,0
mm
相对电痕指数
Comperativetrackingindex
CTI
VISOL kV
2,5
> 200
min.
typ.
max.
LsCE
30
nH
RCC'+EE'
RAA'+CC'
8,00
4,00
mΩ
杂散电感,模块
Strayinductancemodule
模块引线电阻,端子-芯片
Moduleleadresistance,terminals-chip
TC=25°C,每个开关/perswitch
储存温度
Storagetemperature
Tstg
-40
125
°C
Anpresskraft für mech. Bef. pro Feder
mountig force per clamp
F
20
-
50
N
重量
Weight
G
24
g
Der Strom im Dauerbetrieb ist auf 30A effektiv pro Anschlusspin begrenzt.
The current under continuous operation is limited to 30A rms per connector pin.
preparedby:DK
dateofpublication:2013-10-29
approvedby:MB
revision:2.1
4
技术信息/TechnicalInformation
IGBT-模块
IGBT-modules
FB20R06W1E3
初步数据
PreliminaryData
输出特性IGBT,逆变器(典型)
outputcharacteristicIGBT,Inverter(typical)
IC=f(VCE)
VGE=15V
输出特性IGBT,逆变器(典型)
outputcharacteristicIGBT,Inverter(typical)
IC=f(VCE)
Tvj=150°C
40
40
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
32
32
28
28
24
24
20
20
16
16
12
12
8
8
4
4
0
0,0
0,3
0,6
0,9
VGE = 19 V
VGE = 17 V
VGE = 15 V
VGE = 13 V
VGE = 11 V
VGE = 9 V
36
IC [A]
IC [A]
36
1,2
1,5 1,8
VCE [V]
2,1
2,4
2,7
0
3,0
传输特性IGBT,逆变器(典型)
transfercharacteristicIGBT,Inverter(typical)
IC=f(VGE)
VCE=20V
0,0
1,0
1,5
2,0
2,5 3,0
VCE [V]
3,5
4,0
4,5
5,0
开关损耗IGBT,逆变器(典型)
switchinglossesIGBT,Inverter(typical)
Eon=f(IC),Eoff=f(IC)
VGE=±15V,RGon=18Ω,RGoff=18Ω,VCE=300V
40
1,4
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
36
Eon, Tvj = 125°C
Eoff, Tvj = 125°C
Eon, Tvj = 150°C
Eoff, Tvj = 150°C
1,2
32
1,0
28
24
0,8
E [mJ]
IC [A]
0,5
20
0,6
16
12
0,4
8
0,2
4
0
5
6
7
8
9
VGE [V]
10
11
0,0
12
preparedby:DK
dateofpublication:2013-10-29
approvedby:MB
revision:2.1
5
0
5
10
15
20
IC [A]
25
30
35
40
技术信息/TechnicalInformation
IGBT-模块
IGBT-modules
FB20R06W1E3
初步数据
PreliminaryData
开关损耗IGBT,逆变器(典型)
switchinglossesIGBT,Inverter(typical)
Eon=f(RG),Eoff=f(RG)
VGE=±15V,IC=20A,VCE=300V
瞬态热阻抗IGBT,逆变器
transientthermalimpedanceIGBT,Inverter
ZthJH=f(t)
2,0
10
Eon, Tvj = 125°C
Eoff, Tvj = 125°C
Eon, Tvj = 150°C
Eoff, Tvj = 150°C
1,6
ZthJH : IGBT
E [mJ]
ZthJH [K/W]
1,2
0,8
1
0,4
i:
1
2
3
4
ri[K/W]: 0,1901 0,4681 1,003 1,039
τi[s]:
0,0005 0,005 0,05 0,2
0,0
0
20
40
60
80
0,1
0,001
100 120 140 160 180 200
RG [Ω]
反偏安全工作区IGBT,逆变器(RBSOA)
reversebiassafeoperatingareaIGBT,Inverter(RBSOA)
IC=f(VCE)
VGE=±15V,RGoff=18Ω,Tvj=150°C
1
10
40
IC, Modul
IC, Chip
40
36
36
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
32
32
28
28
24
24
IF [A]
IC [A]
0,1
t [s]
正向偏压特性二极管,逆变器(典型)
forwardcharacteristicofDiode,Inverter(typical)
IF=f(VF)
44
20
20
16
16
12
12
8
8
4
4
0
0,01
0
200
400
VCE [V]
600
0
800
preparedby:DK
dateofpublication:2013-10-29
approvedby:MB
revision:2.1
6
0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,8 2,0 2,2
VF [V]
技术信息/TechnicalInformation
IGBT-模块
IGBT-modules
FB20R06W1E3
初步数据
PreliminaryData
开关损耗二极管,逆变器(典型)
switchinglossesDiode,Inverter(typical)
Erec=f(IF)
RGon=18Ω,VCE=300V
开关损耗二极管,逆变器(典型)
switchinglossesDiode,Inverter(typical)
Erec=f(RG)
IF=20A,VCE=300V
0,8
0,7
Erec, Tvj = 125°C
Erec, Tvj = 150°C
0,7
Erec, Tvj = 125°C
Erec, Tvj = 150°C
0,6
0,6
0,5
0,5
E [mJ]
E [mJ]
0,4
0,4
0,3
0,3
0,2
0,2
0,1
0,1
0,0
0
4
8
12
16
20 24
IF [A]
28
32
36
0,0
40
瞬态热阻抗二极管,逆变器
transientthermalimpedanceDiode,Inverter
ZthJH=f(t)
0
20
40
60
80
100 120 140 160 180 200
RG [Ω]
正向偏压特性二极管,整流器(典型)
forwardcharacteristicofDiode,Rectifier(typical)
IF=f(VF)
10
40
ZthJH : Diode
Tvj = 25°C
Tvj = 150°C
36
32
28
IF [A]
ZthJH [K/W]
24
1
20
16
12
8
i:
1
2
3
4
ri[K/W]: 0,3013 0,7006 1,3873 0,9109
τi[s]:
0,0005 0,005 0,05
0,2
0,1
0,001
0,01
0,1
t [s]
1
4
0
10
preparedby:DK
dateofpublication:2013-10-29
approvedby:MB
revision:2.1
7
0,0
0,2
0,4
0,6
VF [V]
0,8
1,0
1,2
技术信息/TechnicalInformation
IGBT-模块
IGBT-modules
FB20R06W1E3
初步数据
PreliminaryData
负温度系数热敏电阻温度特性
NTC-Thermistor-temperaturecharacteristic(typical)
R=f(T)
100000
Rtyp
R[Ω]
10000
1000
100
0
20
40
60
80
100
TC [°C]
120
140
160
preparedby:DK
dateofpublication:2013-10-29
approvedby:MB
revision:2.1
8
技术信息/TechnicalInformation
IGBT-模块
IGBT-modules
FB20R06W1E3
初步数据
PreliminaryData
接线图/circuit_diagram_headline
J
封装尺寸/packageoutlines
In fin e o n
preparedby:DK
dateofpublication:2013-10-29
approvedby:MB
revision:2.1
9
技术信息/TechnicalInformation
IGBT-模块
IGBT-modules
FB20R06W1E3
初步数据
PreliminaryData
使用条件和条款
使用条件和条款
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application.
Thisproductdatasheetisdescribingthecharacteristicsofthisproductforwhichawarrantyisgranted.Anysuchwarrantyisgranted
exclusivelypursuantthetermsandconditionsofthesupplyagreement.Therewillbenoguaranteeofanykindfortheproductandits
characteristics.Theinformationinthevalidapplication-andassemblynotesofthemodulemustbeconsidered.
Shouldyourequireproductinformationinexcessofthedatagiveninthisproductdatasheetorwhichconcernsthespecificapplicationof
ourproduct,pleasecontactthesalesoffice,whichisresponsibleforyou(seewww.infineon.com).Forthosethatarespecifically
interestedwemayprovideapplicationnotes.
Duetotechnicalrequirementsourproductmaycontaindangeroussubstances.Forinformationonthetypesinquestionpleasecontactthe
salesoffice,whichisresponsibleforyou.
ShouldyouintendtousetheProductinaviationapplications,inhealthorliveendangeringorlifesupportapplications,pleasenotify.Please
note,thatforanysuchapplicationsweurgentlyrecommend
-toperformjointRiskandQualityAssessments;
-theconclusionofQualityAgreements;
-toestablishjointmeasuresofanongoingproductsurvey,andthatwemaymakedeliverydependedon
therealizationofanysuchmeasures.
Ifandtotheextentnecessary,pleaseforwardequivalentnoticestoyourcustomers.
Changesofthisproductdatasheetarereserved.
preparedby:DK
dateofpublication:2013-10-29
approvedby:MB
revision:2.1
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