English/Chinese (simplified)

技术信息/TechnicalInformation
IGBT-模块
IGBT-modules
FP50R06W2E3_B11
EasyPIM™2BModulPressFITmitTrench/FeldstoppIGBT3undEmitterControlled3Diode
EasyPIM™2BmodulePressFITwithtrench/fieldstopIGBT3andEmitterControlled3Diode
初步数据
PreliminaryData
IGBT,逆变器/IGBT,Inverter
最大额定值/MaximumRatedValues
集电极-发射极电压
Collector-emittervoltage
Tvj = 25°C
VCES
600
V
连续集电极直流电流
ContinuousDCcollectorcurrent
TC = 75°C, Tvj max = 175°C
TC = 25°C, Tvj max = 175°C
IC nom
IC
50
65
集电极重复峰值电流
Repetitivepeakcollectorcurrent
tP = 1 ms
ICRM
100
A
总功率损耗
Totalpowerdissipation
TC = 25°C, Tvj max = 175°C
Ptot
175
W
栅极-发射极峰值电压
Gate-emitterpeakvoltage
VGES
+/-20
V
特征值/CharacteristicValues
集电极-发射极饱和电压
Collector-emittersaturationvoltage
min.
IC = 50 A, VGE = 15 V
IC = 50 A, VGE = 15 V
IC = 50 A, VGE = 15 V
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
栅极阈值电压
Gatethresholdvoltage
IC = 0,80 mA, VCE = VGE, Tvj = 25°C
栅极电荷
Gatecharge
VCE sat
A
A
typ.
max.
1,45
1,60
1,70
1,90
V
V
V
VGEth
4,9
5,8
6,5
V
VGE = -15 V ... +15 V
QG
0,50
µC
内部栅极电阻
Internalgateresistor
Tvj = 25°C
RGint
0,0
Ω
输入电容
Inputcapacitance
f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V
Cies
3,10
nF
反向传输电容
Reversetransfercapacitance
f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V
Cres
0,095
nF
集电极-发射极截止电流
Collector-emittercut-offcurrent
VCE = 600 V, VGE = 0 V, Tvj = 25°C
ICES
1,0
mA
栅极-发射极漏电流
Gate-emitterleakagecurrent
VCE = 0 V, VGE = 20 V, Tvj = 25°C
IGES
400
nA
td on
0,025
0,025
0,025
µs
µs
µs
tr
0,015
0,018
0,02
µs
µs
µs
td off
0,19
0,21
0,215
µs
µs
µs
tf
0,10
0,135
0,14
µs
µs
µs
开通延迟时间(电感负载)
Turn-ondelaytime,inductiveload
IC = 50 A, VCE = 300 V
VGE = ±15 V
RGon = 8,2 Ω
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
上升时间(电感负载)
Risetime,inductiveload
IC = 50 A, VCE = 300 V
VGE = ±15 V
RGon = 8,2 Ω
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
关断延迟时间(电感负载)
Turn-offdelaytime,inductiveload
IC = 50 A, VCE = 300 V
VGE = ±15 V
RGoff = 8,2 Ω
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
下降时间(电感负载)
Falltime,inductiveload
IC = 50 A, VCE = 300 V
VGE = ±15 V
RGoff = 8,2 Ω
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
开通损耗能量(每脉冲)
Turn-onenergylossperpulse
IC = 50 A, VCE = 300 V, LS = 35 nH
Tvj = 25°C
VGE = ±15 V, di/dt = 2800 A/µs (Tvj = 150°C) Tvj = 125°C
RGon = 8,2 Ω
Tvj = 150°C
Eon
0,55
0,75
0,85
mJ
mJ
mJ
关断损耗能量(每脉冲)
Turn-offenergylossperpulse
IC = 50 A, VCE = 300 V, LS = 35 nH
Tvj = 25°C
VGE = ±15 V, du/dt = 4300 V/µs (Tvj = 150°C) Tvj = 125°C
RGoff = 8,2 Ω
Tvj = 150°C
Eoff
1,20
1,50
1,60
mJ
mJ
mJ
短路数据
SCdata
VGE ≤ 15 V, VCC = 360 V
VCEmax = VCES -LsCE ·di/dt
ISC
350
250
A
A
结-外壳热阻
Thermalresistance,junctiontocase
每个IGBT/perIGBT
RthJC
0,75
0,85 K/W
外壳-散热器热阻
Thermalresistance,casetoheatsink
每个IGBT/perIGBT
λPaste=1W/(m·K)/λgrease=1W/(m·K)
RthCH
0,70
K/W
在开关状态下温度
Temperatureunderswitchingconditions
Tvj op
-40
preparedby:DK
dateofpublication:2013-11-04
approvedby:MB
revision:2.0
1
tP ≤ 8 µs, Tvj = 25°C
tP ≤ 6 µs, Tvj = 150°C
150
°C
技术信息/TechnicalInformation
IGBT-模块
IGBT-modules
FP50R06W2E3_B11
初步数据
PreliminaryData
二极管,逆变器/Diode,Inverter
最大额定值/MaximumRatedValues
反向重复峰值电压
Repetitivepeakreversevoltage
Tvj = 25°C
连续正向直流电流
ContinuousDCforwardcurrent
正向重复峰值电流
Repetitivepeakforwardcurrent
tP = 1 ms
I2t-值
I²t-value
VR = 0 V, tP = 10 ms, Tvj = 125°C
VR = 0 V, tP = 10 ms, Tvj = 150°C
VRRM 600
V
IF
50
A
IFRM
100
A
I²t
370
330
特征值/CharacteristicValues
min.
typ.
max.
1,55
1,50
1,45
1,95
A²s
A²s
正向电压
Forwardvoltage
IF = 50 A, VGE = 0 V
IF = 50 A, VGE = 0 V
IF = 50 A, VGE = 0 V
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
VF
反向恢复峰值电流
Peakreverserecoverycurrent
IF = 50 A, - diF/dt = 2800 A/µs (Tvj=150°C)
VR = 300 V
VGE = -15 V
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
IRM
78,0
82,0
84,0
A
A
A
恢复电荷
Recoveredcharge
IF = 50 A, - diF/dt = 2800 A/µs (Tvj=150°C)
VR = 300 V
VGE = -15 V
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
Qr
2,25
4,00
4,40
µC
µC
µC
反向恢复损耗(每脉冲)
Reverserecoveryenergy
IF = 50 A, - diF/dt = 2800 A/µs (Tvj=150°C)
VR = 300 V
VGE = -15 V
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
Erec
0,58
1,00
1,10
mJ
mJ
mJ
V
V
V
结-外壳热阻
Thermalresistance,junctiontocase
每个二极管/perdiode
RthJC
1,10
1,20 K/W
外壳-散热器热阻
Thermalresistance,casetoheatsink
每个二极管/perdiode
λPaste=1W/(m·K)/λgrease=1W/(m·K)
RthCH
0,90
K/W
在开关状态下温度
Temperatureunderswitchingconditions
Tvj op
-40
150
°C
二极管,整流器/Diode,Rectifier
最大额定值/MaximumRatedValues
反向重复峰值电压
Repetitivepeakreversevoltage
Tvj = 25°C
VRRM 1600
V
最大正向均方根电流(每芯片)
MaximumRMSforwardcurrentperchip
TC = 100°C
IFRMSM 60
A
最大整流器输出均方根电流
MaximumRMScurrentatrectifieroutput
TC = 100°C
IRMSM 60
A
正向浪涌电流
Surgeforwardcurrent
tp = 10 ms, Tvj = 25°C
tp = 10 ms, Tvj = 150°C
IFSM
450
370
A
A
I2t-值
I²t-value
tp = 10 ms, Tvj = 25°C
tp = 10 ms, Tvj = 150°C
I²t
1000
685
A²s
A²s
特征值/CharacteristicValues
min.
typ.
max.
VF
1,05
V
IR
1,00
mA
每个二极管/perdiode
RthJC
1,05
1,15 K/W
外壳-散热器热阻
Thermalresistance,casetoheatsink
每个二极管/perdiode
λPaste=1W/(m·K)/λgrease=1W/(m·K)
RthCH
0,95
K/W
在开关状态下温度
Temperatureunderswitchingconditions
Tvj op
preparedby:DK
dateofpublication:2013-11-04
approvedby:MB
revision:2.0
正向电压
Forwardvoltage
Tvj = 150°C, IF = 50 A
反向电流
Reversecurrent
Tvj = 150°C, VR = 1600 V
结-外壳热阻
Thermalresistance,junctiontocase
2
°C
技术信息/TechnicalInformation
IGBT-模块
IGBT-modules
FP50R06W2E3_B11
初步数据
PreliminaryData
IGBT,制动-斩波器/IGBT,Brake-Chopper
最大额定值/MaximumRatedValues
集电极-发射极电压
Collector-emittervoltage
Tvj = 25°C
VCES
600
V
连续集电极直流电流
ContinuousDCcollectorcurrent
TC = 75°C, Tvj max = 175°C
TC = 25°C, Tvj max = 175°C
IC nom
IC
50
65
集电极重复峰值电流
Repetitivepeakcollectorcurrent
tP = 1 ms
ICRM
100
A
总功率损耗
Totalpowerdissipation
TC = 25°C, Tvj max = 175°C
Ptot
175
W
栅极-发射极峰值电压
Gate-emitterpeakvoltage
VGES
+/-20
V
特征值/CharacteristicValues
集电极-发射极饱和电压
Collector-emittersaturationvoltage
min.
IC = 50 A, VGE = 15 V
IC = 50 A, VGE = 15 V
IC = 50 A, VGE = 15 V
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
栅极阈值电压
Gatethresholdvoltage
IC = 0,80 mA, VCE = VGE, Tvj = 25°C
栅极电荷
Gatecharge
VCE sat
A
A
typ.
max.
1,45
1,60
1,70
1,90
V
V
V
VGEth
4,9
5,8
6,5
V
VGE = -15 V ... +15 V
QG
0,50
µC
内部栅极电阻
Internalgateresistor
Tvj = 25°C
RGint
0,0
Ω
输入电容
Inputcapacitance
f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V
Cies
3,10
nF
反向传输电容
Reversetransfercapacitance
f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V
Cres
0,095
nF
集电极-发射极截止电流
Collector-emittercut-offcurrent
VCE = 600 V, VGE = 0 V, Tvj = 25°C
ICES
1,0
mA
栅极-发射极漏电流
Gate-emitterleakagecurrent
VCE = 0 V, VGE = 20 V, Tvj = 25°C
IGES
400
nA
td on
0,045
0,045
0,045
µs
µs
µs
tr
0,03
0,035
0,04
µs
µs
µs
td off
0,31
0,32
0,33
µs
µs
µs
tf
0,13
0,135
0,14
µs
µs
µs
开通延迟时间(电感负载)
Turn-ondelaytime,inductiveload
IC = 50 A, VCE = 300 V
VGE = ±15 V
RGon = 18 Ω
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
上升时间(电感负载)
Risetime,inductiveload
IC = 50 A, VCE = 300 V
VGE = ±15 V
RGon = 18 Ω
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
关断延迟时间(电感负载)
Turn-offdelaytime,inductiveload
IC = 50 A, VCE = 300 V
VGE = ±15 V
RGoff = 18 Ω
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
下降时间(电感负载)
Falltime,inductiveload
IC = 50 A, VCE = 300 V
VGE = ±15 V
RGoff = 18 Ω
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
开通损耗能量(每脉冲)
Turn-onenergylossperpulse
IC = 50 A, VCE = 300 V, LS = 35 nH
VGE = ±15 V
RGon = 18 Ω
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
Eon
1,50
2,00
2,10
mJ
mJ
mJ
关断损耗能量(每脉冲)
Turn-offenergylossperpulse
IC = 50 A, VCE = 300 V, LS = 35 nH
VGE = ±15 V
RGoff = 18 Ω
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
Eoff
1,20
1,50
1,60
mJ
mJ
mJ
短路数据
SCdata
VGE ≤ 15 V, VCC = 360 V
VCEmax = VCES -LsCE ·di/dt
tP ≤ 8 µs, Tvj = 25°C
tP ≤ 6 µs, Tvj = 150°C
ISC
350
250
A
A
结-外壳热阻
Thermalresistance,junctiontocase
每个IGBT/perIGBT
RthJC
0,75
0,85 K/W
外壳-散热器热阻
Thermalresistance,casetoheatsink
每个IGBT/perIGBT
λPaste=1W/(m·K)/λgrease=1W/(m·K)
RthCH
0,70
K/W
在开关状态下温度
Temperatureunderswitchingconditions
Tvj op
-40
preparedby:DK
dateofpublication:2013-11-04
approvedby:MB
revision:2.0
3
150
°C
技术信息/TechnicalInformation
IGBT-模块
IGBT-modules
FP50R06W2E3_B11
初步数据
PreliminaryData
二极管,制动-斩波器/Diode,Brake-Chopper
最大额定值/MaximumRatedValues
反向重复峰值电压
Repetitivepeakreversevoltage
Tvj = 25°C
连续正向直流电流
ContinuousDCforwardcurrent
正向重复峰值电流
Repetitivepeakforwardcurrent
tP = 1 ms
I2t-值
I²t-value
VR = 0 V, tP = 10 ms, Tvj = 125°C
VR = 0 V, tP = 10 ms, Tvj = 150°C
VRRM 600
V
IF
15
A
IFRM
30
A
I²t
22,5
20,5
特征值/CharacteristicValues
min.
typ.
max.
1,60
1,55
1,50
2,00
A²s
A²s
正向电压
Forwardvoltage
IF = 15 A, VGE = 0 V
IF = 15 A, VGE = 0 V
IF = 15 A, VGE = 0 V
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
VF
反向恢复峰值电流
Peakreverserecoverycurrent
IF = 15 A, - diF/dt = 1600 A/µs (Tvj=150°C)
VR = 300 V
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
IRM
23,0
25,0
26,0
A
A
A
恢复电荷
Recoveredcharge
IF = 15 A, - diF/dt = 1600 A/µs (Tvj=150°C)
VR = 300 V
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
Qr
0,80
1,40
1,70
µC
µC
µC
反向恢复损耗(每脉冲)
Reverserecoveryenergy
IF = 15 A, - diF/dt = 1600 A/µs (Tvj=150°C)
VR = 300 V
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
Erec
0,16
0,28
0,37
mJ
mJ
mJ
结-外壳热阻
Thermalresistance,junctiontocase
每个二极管/perdiode
RthJC
2,25
2,50 K/W
外壳-散热器热阻
Thermalresistance,casetoheatsink
每个二极管/perdiode
λPaste=1W/(m·K)/λgrease=1W/(m·K)
RthCH
1,40
K/W
在开关状态下温度
Temperatureunderswitchingconditions
Tvj op
-40
150
min.
typ.
max.
R25
5,00
kΩ
∆R/R
-5
5
%
P25
20,0
mW
V
V
V
°C
负温度系数热敏电阻/NTC-Thermistor
特征值/CharacteristicValues
额定电阻值
Ratedresistance
TC = 25°C
R100偏差
DeviationofR100
TC = 100°C, R100 = 493 Ω
耗散功率
Powerdissipation
TC = 25°C
B-值
B-value
R2 = R25 exp [B25/50(1/T2 - 1/(298,15 K))]
B25/50
3375
K
B-值
B-value
R2 = R25 exp [B25/80(1/T2 - 1/(298,15 K))]
B25/80
3411
K
B-值
B-value
R2 = R25 exp [B25/100(1/T2 - 1/(298,15 K))]
B25/100
3433
K
根据应用手册标定
Specificationaccordingtothevalidapplicationnote.
preparedby:DK
dateofpublication:2013-11-04
approvedby:MB
revision:2.0
4
技术信息/TechnicalInformation
IGBT-模块
IGBT-modules
FP50R06W2E3_B11
初步数据
PreliminaryData
模块/Module
绝缘测试电压
Isolationtestvoltage
RMS, f = 50 Hz, t = 1 min.
内部绝缘
Internalisolation
基本绝缘(class1,IEC61140)
basicinsulation(class1,IEC61140)
Al2O3
爬电距离
Creepagedistance
端子-散热片/terminaltoheatsink
端子-端子/terminaltoterminal
11,5
6,3
mm
电气间隙
Clearance
端子-散热片/terminaltoheatsink
端子-端子/terminaltoterminal
10,0
5,0
mm
相对电痕指数
Comperativetrackingindex
CTI
> 200
VISOL kV
2,5
min.
typ.
max.
LsCE
30
nH
RCC'+EE'
RAA'+CC'
5,00
6,00
mΩ
Tstg
-40
125
°C
Anpresskraft für mech. Bef. pro Feder
mountig force per clamp
F
40
-
80
N
重量
Weight
G
39
g
杂散电感,模块
Strayinductancemodule
模块引线电阻,端子-芯片
Moduleleadresistance,terminals-chip
TC=25°C,每个开关/perswitch
储存温度
Storagetemperature
Der Strom im Dauerbetrieb ist auf 25 A effektiv pro Anschlusspin begrenzt.
The current under continuous operation is limited to 25 A rms per connector pin.
preparedby:DK
dateofpublication:2013-11-04
approvedby:MB
revision:2.0
5
技术信息/TechnicalInformation
IGBT-模块
IGBT-modules
FP50R06W2E3_B11
初步数据
PreliminaryData
输出特性IGBT,逆变器(典型)
outputcharacteristicIGBT,Inverter(typical)
IC=f(VCE)
VGE=15V
输出特性IGBT,逆变器(典型)
outputcharacteristicIGBT,Inverter(typical)
IC=f(VCE)
Tvj=150°C
100
100
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
80
80
70
70
60
60
50
50
40
40
30
30
20
20
10
10
0
0,0
0,5
1,0
VGE = 19 V
VGE = 17 V
VGE = 15 V
VGE = 13 V
VGE = 11 V
VGE = 9 V
90
IC [A]
IC [A]
90
1,5
VCE [V]
2,0
2,5
0
3,0
传输特性IGBT,逆变器(典型)
transfercharacteristicIGBT,Inverter(typical)
IC=f(VGE)
VCE=20V
0,0
0,5
1,0
1,5
2,0
2,5 3,0
VCE [V]
3,5
4,0
4,5
5,0
80
90
100
开关损耗IGBT,逆变器(典型)
switchinglossesIGBT,Inverter(typical)
Eon=f(IC),Eoff=f(IC)
VGE=±15V,RGon=8.2Ω,RGoff=8.2Ω,VCE=300V
100
4,0
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
90
Eon, Tvj = 125°C
Eoff, Tvj = 125°C
Eon, Tvj = 150°C
Eoff, Tvj = 150°C
3,5
80
3,0
70
2,5
E [mJ]
IC [A]
60
50
40
2,0
1,5
30
1,0
20
0,5
10
0
5
6
7
8
9
VGE [V]
10
11
0,0
12
preparedby:DK
dateofpublication:2013-11-04
approvedby:MB
revision:2.0
6
0
10
20
30
40
50 60
IC [A]
70
技术信息/TechnicalInformation
IGBT-模块
IGBT-modules
FP50R06W2E3_B11
初步数据
PreliminaryData
开关损耗IGBT,逆变器(典型)
switchinglossesIGBT,Inverter(typical)
Eon=f(RG),Eoff=f(RG)
VGE=±15V,IC=50A,VCE=300V
瞬态热阻抗IGBT,逆变器
transientthermalimpedanceIGBT,Inverter
ZthJH=f(t)
7,0
10
Eon, Tvj = 125°C
Eoff, Tvj = 125°C
Eon, Tvj = 150°C
Eoff, Tvj = 150°C
6,0
ZthJH : IGBT
5,0
E [mJ]
ZthJH [K/W]
4,0
3,0
1
2,0
1,0
0,0
i:
1
2
3
4
ri[K/W]: 0,084 0,195 0,587 0,585
τi[s]:
0,0005 0,005 0,05 0,2
0
10
20
30
40
50
RG [Ω]
60
70
80
0,1
0,001
90
反偏安全工作区IGBT,逆变器(RBSOA)
reversebiassafeoperatingareaIGBT,Inverter(RBSOA)
IC=f(VCE)
VGE=±15V,RGoff=8.2Ω,Tvj=150°C
1
10
100
IC, Modul
IC, Chip
100
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
90
90
80
80
70
70
60
60
IF [A]
IC [A]
0,1
t [s]
正向偏压特性二极管,逆变器(典型)
forwardcharacteristicofDiode,Inverter(typical)
IF=f(VF)
110
50
50
40
40
30
30
20
20
10
10
0
0,01
0
100
200
300
400
VCE [V]
500
600
0
700
preparedby:DK
dateofpublication:2013-11-04
approvedby:MB
revision:2.0
7
0,0
0,2
0,4
0,6
0,8
1,0 1,2
VF [V]
1,4
1,6
1,8
2,0
技术信息/TechnicalInformation
IGBT-模块
IGBT-modules
FP50R06W2E3_B11
初步数据
PreliminaryData
开关损耗二极管,逆变器(典型)
switchinglossesDiode,Inverter(typical)
Erec=f(IF)
RGon=8.2Ω,VCE=300V
开关损耗二极管,逆变器(典型)
switchinglossesDiode,Inverter(typical)
Erec=f(RG)
IF=50A,VCE=300V
2,0
1,4
Erec, Tvj = 125°C
Erec, Tvj = 150°C
1,8
Erec, Tvj = 125°C
Erec, Tvj = 150°C
1,2
1,6
1,0
1,4
0,8
E [mJ]
E [mJ]
1,2
1,0
0,6
0,8
0,6
0,4
0,4
0,2
0,2
0,0
0
10
20
30
40
50 60
IF [A]
70
80
90
0,0
100
瞬态热阻抗二极管,逆变器
transientthermalimpedanceDiode,Inverter
ZthJH=f(t)
0
10
20
30
40
50
RG [Ω]
60
70
80
90
1,4
1,6
正向偏压特性二极管,整流器(典型)
forwardcharacteristicofDiode,Rectifier(typical)
IF=f(VF)
10
100
ZthJH : Diode
Tvj = 25°C
Tvj = 150°C
90
80
70
IF [A]
ZthJH [K/W]
60
1
50
40
30
20
i:
1
2
3
4
ri[K/W]: 0,166 0,359 0,821 0,654
τi[s]:
0,0005 0,005 0,05 0,2
0,1
0,001
0,01
0,1
t [s]
1
10
0
10
preparedby:DK
dateofpublication:2013-11-04
approvedby:MB
revision:2.0
8
0,0
0,2
0,4
0,6
0,8
VF [V]
1,0
1,2
技术信息/TechnicalInformation
IGBT-模块
IGBT-modules
FP50R06W2E3_B11
初步数据
PreliminaryData
输出特性IGBT,制动-斩波器(典型)
outputcharacteristicIGBT,Brake-Chopper(typical)
IC=f(VCE)
VGE=15V
正向偏压特性二极管,制动-斩波器(典型)
forwardcharacteristicofDiode,Brake-Chopper(typical)
IF=f(VF)
100
30
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
80
24
70
21
60
18
50
15
40
12
30
9
20
6
10
3
0
0,0
0,5
1,0
1,5
VCE [V]
2,0
2,5
0
3,0
负温度系数热敏电阻温度特性
NTC-Thermistor-temperaturecharacteristic(typical)
R=f(T)
100000
Rtyp
R[Ω]
10000
1000
100
0
20
40
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
27
IF [A]
IC [A]
90
60
80
100
TC [°C]
120
140
160
preparedby:DK
dateofpublication:2013-11-04
approvedby:MB
revision:2.0
9
0,0
0,3
0,6
0,9
1,2
VF [V]
1,5
1,8
2,1
2,4
技术信息/TechnicalInformation
IGBT-模块
IGBT-modules
FP50R06W2E3_B11
初步数据
PreliminaryData
接线图/circuit_diagram_headline
J
封装尺寸/packageoutlines
Infineon
preparedby:DK
dateofpublication:2013-11-04
approvedby:MB
revision:2.0
10
技术信息/TechnicalInformation
IGBT-模块
IGBT-modules
FP50R06W2E3_B11
初步数据
PreliminaryData
使用条件和条款
使用条件和条款
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Terms&Conditionsofusage
Thedatacontainedinthisproductdatasheetisexclusivelyintendedfortechnicallytrainedstaff.Youandyourtechnicaldepartmentswill
havetoevaluatethesuitabilityoftheproductfortheintendedapplicationandthecompletenessoftheproductdatawithrespecttosuch
application.
Thisproductdatasheetisdescribingthecharacteristicsofthisproductforwhichawarrantyisgranted.Anysuchwarrantyisgranted
exclusivelypursuantthetermsandconditionsofthesupplyagreement.Therewillbenoguaranteeofanykindfortheproductandits
characteristics.Theinformationinthevalidapplication-andassemblynotesofthemodulemustbeconsidered.
Shouldyourequireproductinformationinexcessofthedatagiveninthisproductdatasheetorwhichconcernsthespecificapplicationof
ourproduct,pleasecontactthesalesoffice,whichisresponsibleforyou(seewww.infineon.com).Forthosethatarespecifically
interestedwemayprovideapplicationnotes.
Duetotechnicalrequirementsourproductmaycontaindangeroussubstances.Forinformationonthetypesinquestionpleasecontactthe
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ShouldyouintendtousetheProductinaviationapplications,inhealthorliveendangeringorlifesupportapplications,pleasenotify.Please
note,thatforanysuchapplicationsweurgentlyrecommend
-toperformjointRiskandQualityAssessments;
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Ifandtotheextentnecessary,pleaseforwardequivalentnoticestoyourcustomers.
Changesofthisproductdatasheetarereserved.
preparedby:DK
dateofpublication:2013-11-04
approvedby:MB
revision:2.0
11
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