Composite Transistors UP04878 Silicon N-channel MOSFET Unit: mm 0.20+0.05 –0.02 (0.30) 4 ■ Features 1 5˚ 2 3 (0.50)(0.50) 1.00±0.05 1.60±0.05 (0.20) • Allowing 2.5 V drive • Incorporating a built-in gate protection-diode • Reduction of the mounting area and assembly cost by one half (0.20) 5 1.20±0.05 6 1.60±0.05 For switching 0.10±0.02 5˚ 0.10 max. ■ Basic Part Number 0.55±0.05 Display at No.1 lead ■ Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit Drain-source surrender voltage VDSS 50 V Gate-source voltage (Drain open) VGSO ±7 V Drain current ID 100 mA Peak drain current IDP 200 mA Total power dissipation PT 125 mW Channel temperature Tch 125 °C Storage temperature Tstg −55 to +125 °C 1: Source (FET1) 2: Gate (FET1) 3: Drain (FET2) Symbol 4: Source (FET2) 5: Gate (FET2) 6: Drain (FET1) SSMini6-F1 Package Marking Symbol: 7Y Internal Connection ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter 0 to 0.02 • 2SK3539 × 2 Conditions 6 5 4 1 2 3 Min Typ Max Unit VDSS ID = 10 µA, VGS = 0 Drain-source cutoff current IDSS VDS = 50 V, VGS = 0 1.0 µA Gate-source cutoff current IGSS VGS = ±7 V, VDS = 0 ±5 µA Vth ID = 1 µA, VDS = 3 V Drain-source surrender voltage Gate threshold voltage Drain-source ON resistance RDS(on) ID = 10 mA, VGS = 2.5 V Forward transfer admittance Yfs ID = 10 mA, VGS = 4.0 V 50 0.9 ID = 10 mA, VGS = 4.0 V VDS = 3 V, VGS = 0 V, f = 1 MHz 20 V 1.2 1.5 V 8 15 Ω 6 12 60 mS 12 pF Short-circuit forward transfer capacitance (Common-source) Ciss Short-circuit output capacitance (Common-source) Coss 7 pF Reverse transfer capacitance Crss 3 pF (Common-source) Turn-on time ton VDD = 3 V, VGS = 0 V to 3 V, RL = 470 Ω 200 ns Turn-off time toff VDD = 3 V, VGS = 3 V to 0 V, RL = 470 Ω 200 ns Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 Measuring methods for transistors. Publication date: June 2004 SJJ00289AED 1 UP04878 PT Ta ID VDS 80 80 60 40 VGS = 2.5 V 2.3 V 50 2.2 V 40 2.1V 30 2.0 V 20 85°C 150 100 10 0 0 40 80 120 0 0 Yfs VGS 0.14 Drain-source ON resistance RDS(on) (Ω) 0.08 0.06 0.04 0.02 0 6 8 10 12 1.0 2.0 Gate-source voltage VGS (V) 3.0 ID = 10 mA 30 20 Ta = 85°C 10 25°C −25°C 0 0 2 4 6 Gate-source voltage VGS (V) SJJ00289AED 0 1 2 3 4 5 6 7 Gate-source voltage VGS (V) RDS(on) VGS 0.10 0 4 40 VDS = 3 V Ta = 25°C 0.12 2 Drain-source voltage VDS (V) Ambient temperature Ta (°C) Forward transfer admittance |Yfs | (S) 25°C 50 20 0 2 Ta = −25°C VDS = 3 V 200 2.4 V 60 Drain current ID (mA) 100 ID VGS 250 Ta = 25°C 70 120 Drain current ID (mA) Total power dissipation PT (mW) 140 8 8 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technical information described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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