bat86.pdf

RECTRON
BAT86
SEMICONDUCTOR
TECHNICAL SPECIFICATION
SILICON PLANAR SCHOTTKY
BARRIER DIODE
FEATURES
* Fast Switching Device(TRR<4.0nS)
* DO-34 Package (JEDEC)
* Through-Hole Device Type Mounting
* Hermetically Sealed Glass
* Compression Bonded Construction
* All external surfaces are corrosion resistant and leads
are readily solderable
DO-34
.022 (0.56)
DIA.
.018 (0.46)
1.02 (26.0)
MIN.
.165 (4.2)
MAX.
.079 (2.0)
MAX.
DIA.
1.02 (26.0)
MIN.
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 o C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Dimensions in inches and (millimeters)
o
MAXIMUM RATINGES ( @ TA = 25 C unless otherwise noted )
UNITS
SYMBOL
BAT86
VR
50
V
IF
200
mAmps
Repetitive Peak Forward Current tp<1s:δ<0.5
IFRM
500
AmpsR
Surge Forward Current @ tp<10ms
IFSM
5
mAmps
TJ
125
O
C
TSTG
-65 to + 150
O
C
RATINGS
Maximum Forward Comtinuous Reverse Voltage
Maximum Forward Comtinuous Current @ T A =25 OC
Junction Temperature
Storage Temperature Range
o
ELECTRICAL CHARACTERISTICS ( @ TA = 25 C unless otherwise noted )
CHARACTERISTICS
Reverse breakdown voltage (IR=10µA)
Reverse voltage leakage current (VR=40V)
SYMBOL
MIN.
TYP.
MAX.
UNITS
V(BR)R
50
-
-
V
IR
-
-
5.0
µA
-
0.30
-
0.38
-
0.45
-
0.60
(IF=0.1mA)
(IF=1mA)
Forward voltage Pulse Tesx tp<300µs,δ<2%
(IF=10mA)
VF
-
(IF=30mA)
(IF=100mA)
V
-
0.90
Diode capacitance (VR=1,f=1MHz)
CD
-
-
8.0
pF
Reveres recovery time (IF=IR=10mA,RL=100Ω,IR=1mA)
trr
-
-
4.0
nS
2006-3
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