Data Sheet

KMA221
Programmable angle sensor
Rev. 1 — 16 July 2013
Product data sheet
1. Product profile
1.1 General description
The KMA221 is a magnetic angle sensor module. The MagnetoResistive (MR) sensor
bridges, the mixed signal Integrated Circuit (IC) and the required capacitors are integrated
into a single package.
This angular measurement module KMA221 is pre-programmed, pre-calibrated and
therefore, ready to use.
The KMA221 allows user-specific adjustments of angular range, zero angle and clamping
voltages. The settings are stored permanently in a non-volatile memory.
1.2 Features and benefits
 High precision sensor for magnetic
angular measurement
 Single package sensor module with
integrated filters for improved
ElectroMagnetic Compatibility (EMC)
 Automotive qualified in accordance with
AEC-Q100 Rev-G
 Programmable user adjustments,
including zero angle and angular range
 Fail-safe non-volatile memory with write
protection using lock bit
 Independent from magnetic field
strength above 35 kA/m
 Ready to use without external
components
 High temperature range up to 160 C
 Analog ratiometric output voltage
 Overvoltage protection up to 16 V
 Programming via One-Wire Interface
(OWI)
 User-programmable 32-bit identifier
 Magnet-loss, power-loss and broken
bond wire detection
 Factory calibrated
KMA221
NXP Semiconductors
Programmable angle sensor
2. Pinning information
Table 1.
Pinning
Pin
Symbol
Description
1
OUT/DATA
analog output or data interface
2
GND
ground
3
VDD
supply voltage
4
n.c.
not connected
Simplified outline
1
2
3
4
3. Ordering information
Table 2.
KMA221
Product data sheet
Ordering information
Type number
Package
Name
Description
Version
KMA221
SIL4
plastic, single in-line package
SOT1188-1
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DIGITAL
VOLTAGE
REGULATOR
ANALOG
VOLTAGE
REGULATOR
(SWITCHING)
POR
UNDERVOLTAGE
DETECTION/
POR
POWER-LOSS
DETECTION
Cblock
GND
LOW-PASS
FILTER
LOW-PASS
FILTER
MULTIPLEXER (MUX)
differential
amplifier
output
buffer
ADC
OSCILLATOR
OUT/DATA
DAC
ONE-WIRE
INTERFACE
GND
CL
NON-VOLATILE
MEMORY
TEST
CONTROL
CLOCK
GENERATOR
DEMUX
Rev. 1 — 16 July 2013
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POWER-LOSS
DETECTION
NXP Semiconductors
ANALOG
VOLTAGE
REGULATOR
(CLEAN)
4. Functional diagram
KMA221
Product data sheet
VDD
DIGITAL
FILTER AND
AVERAGING
OFFSET
CORRECTION
ANGLE
CALCULATION
ANGULAR
RANGE
ADJUSTMENT
SERIAL
INTERFACE
GND
MAGNETORESISTIVE
SENSOR BRIDGES
SIGNAL CONDITIONING INTEGRATED CIRCUIT
INTEGRATED
CAPACITANCES
Functional diagram of KMA221
KMA221
3 of 36
© NXP B.V. 2013. All rights reserved.
Fig 1.
Programmable angle sensor
001aan661
KMA221
NXP Semiconductors
Programmable angle sensor
5. Functional description
The KMA221 amplifies two orthogonal differential signals from MR sensor bridges and
converts them into the digital domain. The angle is calculated using the COordinate
Rotation DIgital Computer (CORDIC) algorithm. After a digital-to-analog conversion, the
analog signal is provided to the output as a linear representation of the angular value.
Zero angle, clamping voltages and angular range are programmable. In addition, two
16-bit registers are available for customer purposes, such as sample identification.
The KMA221 comprises a Cyclic Redundancy Check (CRC) and an Error Detection and
Correction (EDC). It also has magnet-loss and broken bond wire detection to ensure
a fail-safe operation. If either the supply voltage or the ground line of the mixed signal IC
is interrupted, a power-loss detection circuit pulls the analog output to the remaining
connection.
After multiplexing the two MR Wheatstone bridge signals and their successive
amplification, the signal is converted into the digital domain by an Analog-to-Digital
Converter (ADC). Further processing is done within an on-chip state machine. This state
machine controls offset cancelation, calculation of the mechanical angle using the
CORDIC algorithm, as well as zero angle and angular range adjustment. The internal
Digital-to-Analog Converter (DAC) and analog output stage are used for the conversion of
the angle information into an analog output voltage, which is ratiometric to the supply
voltage.
The configuration parameters are stored in a user-programmable non-volatile memory.
The OWI (accessible using pin OUT/DATA) is used for accessing the memory. In order to
protect the memory content, a lock bit can be set. After locking the non-volatile memory,
its content cannot be changed anymore.
5.1 Angular measurement directions
The differential signals of the MR sensor bridges depend only on the direction of the
external magnetic field strength Hext, which is applied parallel to the plane of the sensor.
In order to obtain a correct output signal, exceed the minimum saturation field strength.
KMA221
Product data sheet
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4 of 36
KMA221
NXP Semiconductors
Programmable angle sensor
α
Hext
1
Fig 2.
2
3
4
008aaa276
Angular measurement directions
Since the Anisotropic MR (AMR) effect is periodic over 180, the sensor output is also
180-periodic. The angle is calculated relative to a freely programmable zero angle. The
dashed line indicates the mechanical zero degree position.
6. Analog output
The KMA221 provides one analog output signal on pin OUT/DATA. The measured angle
 is converted linearly into a value, which is ratiometric to the supply voltage VDD. Either a
positive or a negative slope is provided for this purpose.
Table 3 describes the analog output behavior for a positive slope. For example, if
a magnetic field angle, above the programmed maximum angle max but below the clamp
switch angle sw(CL), is applied to the sensor, the analog output is set to the upper
clamping voltage. If the magnetic field angle is larger than the clamp switch angle, the
analog output switches from upper to lower clamping voltage. If there is a negative slope,
the clamping voltages are changed.
Table 3.
Analog output behavior for a positive slope
Magnetic field angle
Analog output
max <  < sw(CL)
V(CL)u
sw(CL) <  < ref + 180
V(CL)l
The analog output voltage range encodes both angular and diagnostic information. A valid
angle value is between the upper and lower clamping voltage. If the analog output is in the
diagnostic range, that is below 4 %VDD or above 96 %VDD, an error condition has been
detected. The analog output repeats every 180.
KMA221
Product data sheet
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KMA221
NXP Semiconductors
Programmable angle sensor
VO
(%VDD)
αrng
V(CL)u
V(CL)I
0
αref
α (deg)
αmax
180
αsw(CL)
αref + 180°
001aag811
max = ref + rng
Fig 3.
Characteristic of the analog output
7. Diagnostic features
The KMA221 provides several diagnostic features:
7.1 CRC and EDC supervision
The KMA221 includes a supervision of the programmed data. At power-on, a CRC of the
non-volatile memory is performed. Furthermore the memory is protected against bit
errors. Every 16-bit data word is saved internally as a 22-bit word for this purpose. The
protection logic corrects any single-bit error in a data word, while the sensor continues in
normal operation mode. Furthermore the logic detects double-bit error per word and
switches the output into diagnostic mode.
7.2 Magnet-loss detection
If the applied magnetic field strength is not sufficient, the KMA221 can raise a diagnostic
condition. In order to enter the diagnostic mode, due to magnet-loss, enable the detection
first. The device can be programmed into active diagnostic mode, where the output is
driven below 4 %VDD or above 96 %VDD.
7.3 Power-loss detection
The power-loss detection circuit enables the detection of an interrupted supply or ground
line of the mixed signal IC. If there is a power-loss condition, two internal switches in the
sensor are closed, connecting the pin of the analog output to the supply voltage and the
ground pins.
KMA221
Product data sheet
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© NXP B.V. 2013. All rights reserved.
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KMA221
NXP Semiconductors
Programmable angle sensor
.0$
9''
=2SO
287'$7$
=2SO
*1'
DDD
Fig 4.
Equivalent output circuit in a power-loss condition
Table 4 describes the power-loss behavior and gives the resulting output voltage
depending on the interrupted supply or ground line and the load resistance.
Table 4.
Power-loss behavior
Load resistance
Interrupted supply line
Interrupted ground line
RL(ext) > 5 k
VO  4 %VDD
VO  96 %VDD
7.4 Broken bond wire detection
The broken bond wire detection circuit enables the detection of an interrupted supply or
ground line of the MR sensor bridge. If there is a broken bond wire, the device goes into
diagnostic mode and a status bit is set.
7.5 Low supply voltage detection and overvoltage protection
If the supply voltage is below the switch-off threshold voltage, a status bit is set and the
device goes into diagnostic mode. If the supply voltage is above the overvoltage switch-on
threshold voltage, the device enters diagnostic mode. Table 5 describes the system
behavior depending on the voltage range of the supply voltage.
Table 5.
System behavior
Supply voltage
State
0 V to  1.8 V
start-up power The output buffer drives an active LOW or is powered down.
The switches of the power-loss detection circuit are not fully
opened and set the output to a level between ground and half
the supply voltage.
Description
 1.8 V to VPOR
power-on
reset
The power-loss charge pump is fully operational and turns the
switches of the detection circuit off. The output buffer drives
an active LOW and sets the output to the lower diagnostic
level. During the reset phase, all circuits are in reset and/or
Power-down mode.
VPOR to Vth(on) or
Vth(off)
initialization
The digital core and the oscillator are active. After reset, the
content of the non-volatile memory is copied into the shadow
registers. The output buffer drives an active LOW and sets the
output to the lower diagnostic level.
Vth(on) or Vth(off) to functional
minimum VDD
operation
KMA221
Product data sheet
All analog circuits are active and the measured angle is
available at the analog output. Not all parameters are within
the specified limits.
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KMA221
NXP Semiconductors
Programmable angle sensor
Table 5.
System behavior …continued
Supply voltage
State
Description
Minimum VDD to
maximum VDD
normal
operation
All analog circuits are active and the measured angle is
available at the analog output. All parameters are within the
specified limits.
Maximum VDD to
Vth(ov)
functional
operation
All analog circuits are active and the measured angle is
available at the analog output. Not all parameters are within
the specified limits.
Vth(ov) to 16 V
overvoltage
The digital core and the oscillator are active but all other
circuits are in Power-down mode. The output is set to the
lower diagnostic level.
Table 6 describes the diagnostic behavior and the resulting output voltage depending on
the error case. Furthermore the duration and termination condition to enter and leave the
diagnostic mode are given, respectively.
Table 6.
Diagnostic behavior
Diagnostic condition Duration
Analog output
Termination condition
Low voltage
1 s < t < 10 s
 4 %VDD
functional or normal
operation
Overvoltage
1 s < t < 10 s
 4 %VDD
functional or normal
operation
Checksum error
n/a
 4 %VDD or  96 %VDD[2] power-on reset[1]
Double-bit error
n/a
 4 %VDD or  96 %VDD[2] power-on reset[1]
Magnet-loss
0.5 ms < t < 6 ms  4 %VDD or  96 %VDD[2] magnet present[1]
Power-loss
 2 ms
Broken bond wire
0.2 ms < t < 1 ms  4 %VDD or  96 %VDD[2] power-on reset[1]
 4 %VDD or  96 %VDD[2] power-on reset
[1]
Status bit stays set in command register until power-on reset.
[2]
Depending on the diagnostic level setting.
8. Limiting values
Table 7.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
VDD
supply voltage
VO
output voltage
Min
Max
Unit
0.3
+16
V
0.3
+16
V
Vth(ov)
16
V
-
150
mA
VO(ov)
overvoltage output voltage
Tamb < 140 C
at t < 1 h
Ir
reverse current
Tamb < 70 C
Tamb
ambient temperature
40
+160
C
Tamb(pr)
programming ambient temperature
10
70
C
Tstg
storage temperature
40
+125
C
Tamb = 50 C
17
-
year
Tamb(pr) = 70 C
100
-
cycle
[1]
Non-volatile memory
tret(D)
data retention time
Nendu(W_ER) write or erase endurance
[1]
KMA221
Product data sheet
Overvoltage on analog output and supply within the specified operating voltage range.
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KMA221
NXP Semiconductors
Programmable angle sensor
9. Recommended operating conditions
Table 8.
Operating conditions
In a homogenous magnetic field.
Symbol
Parameter
Conditions
[1]
Min
Typ
Max
Unit
4.5
5.0
5.5
V
VDD
supply voltage
Tamb
ambient temperature
40
-
+160 C
Tamb(pr)
programming ambient temperature
10
-
70
C
[1][2]
0
-
22
nF
[2][3]
0
-
6.8
nF
CL(ext)
external load capacitance
RL(ext)
external load resistance
Hext
external magnetic field strength
[4]
5
-

k
35
-
-
kA/m
[1]
Normal operation mode.
[2]
Between ground and analog output.
[3]
Command mode.
[4]
Power-loss detection is only possible with a load resistance within the specified range connected to the
supply or ground line.
10. Thermal characteristics
Table 9.
Thermal characteristics
Symbol
Parameter
Conditions
Rth(j-a)
thermal resistance from junction to
ambient
Typ
Unit
100
K/W
11. Characteristics
Table 10.
Mechanical characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Flead
mechanical force to the leads
Tamb = 25 C
-
-
10
N
Ffin
mechanical force to the fin holder
Tamb = 25 C
-
-
15
N
Unit
Table 11. Supply current
Characteristics are valid for the operating conditions, as specified in Section 9.
Symbol
Ioff(ov)
Product data sheet
Conditions
supply current
IDD
KMA221
Parameter
overvoltage switch-off current
Min
Typ
Max
[1][2]
5
-
10.5
mA
[3][4]
-
-
13
mA
[5]
-
-
6
mA
[1]
Normal operation and diagnostic mode excluding overvoltage and undervoltage within the specified
operating supply voltage range.
[2]
Without load current at the analog output.
[3]
Normal operation and diagnostic mode over full voltage range up to limiting supply voltage at steady state.
[4]
With minimum load resistance at the analog output.
[5]
Diagnostic mode for a supply voltage above the overvoltage threshold voltage up to the limiting supply
voltage.
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KMA221
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Programmable angle sensor
Table 12. Power-on reset
Characteristics are valid for the operating conditions, as specified in Section 9.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Vth(on)
switch-on threshold
voltage
analog output switches on, if
VDD > Vth(on)
-
4.30
4.45
V
Vth(off)
switch-off threshold
voltage
analog output switches off, if
VDD < Vth(off)
3.90
4.10
-
V
Vhys
hysteresis voltage
Vhys = Vth(on)  Vth(off)
0.1
0.2
-
V
VPOR
power-on reset voltage
IC is initialized
-
3.3
3.6
V
Vth(ov)
overvoltage threshold
voltage
analog output switches off, if
VDD > Vth(ov)
6.5
7.5
8.0
V
Vhys(ov)
overvoltage hysteresis
voltage
0.1
0.3
-
V
Table 13. Module performance
Characteristics are valid for the operating conditions, as specified in Section 9.
Symbol
Parameter
res
angle resolution
max
maximum angle
ref
Min
Typ
Max
Unit
[1]
-
-
0.04
deg
programmable angular range
for V(CL)u  V(CL)l  80 %VDD
[2]
5
-
180
deg
reference angle
programmable zero angle
[2]
VO(nom)
nominal output voltage
at full supply operating range
VO(udr)
upper diagnostic range
output voltage
VO(ldr)
V(CL)u
V(CL)l
Conditions
0
-
180
deg
5
-
95
%VDD
[3][4][5]
96
-
100
%VDD
lower diagnostic range
output voltage
[3][4][5]
0
-
4
%VDD
upper clamping voltage
[4][5][6]
40
-
95
%VDD
lower clamping voltage
[4][5][6]
5
-
30.5
%VDD
0.3
-
+0.3
%VDD
V(CL)
clamping voltage variation
deviation from programmed
value
[4][5]
Vn(o)(RMS)
RMS output noise voltage
equivalent power noise
[1][4]
-
0.4
2.5
mV
temperature range
40 C to +160 C
[4][7]
1.2
-
+1.2
deg
temperature range
40 C to +140 C
[4][7]
1
-
+1
deg
temperature range
40 C to +160 C
[1][4][7]
-
-
0.8
deg
temperature range
40 C to +140 C
[1][4][7]
-
-
0.65
deg
temperature range
40 C to +160 C
[7][8][9]
-
-
0.65
deg
temperature range
40 C to +140 C
[7][8][9]
-
-
0.55
deg
referred to input
[4][7]
-
-
0.09
deg
referred to input
[4][7]
0.1
-
+0.1
deg
lin
temp
tempRT
hys
lin
linearity error
temperature drift error
temperature drift error at
room temperature
hysteresis error
microlinearity error
KMA221
Product data sheet
[8]
[8]
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KMA221
NXP Semiconductors
Programmable angle sensor
Table 13. Module performance …continued
Characteristics are valid for the operating conditions, as specified in Section 9.
Symbol
ang
Parameter
Conditions
angular error
temperature range
40 C to +160 C
[4][7]
temperature range
40 C to +140 C
[4][7]
Typ
Max
Unit
1.35
-
+1.35
deg
1.1
-
+1.1
deg
-
-
0.04
deg/deg
-
-
210

[10]
[10]
[4][7]
slope of angular error
mang
Min
[10]
ZO(pl)
power-loss output
impedance
impedance to remaining
supply line in case of lost
supply voltage or lost ground
[1]
At a nominal output voltage between 5 %VDD and 95 %VDD and a maximum angle of max = 180.
[2]
In steps of resolution < 0.022.
[3]
Activation is dependent on the programmed diagnostic mode.
[4]
At a low-pass filtered analog output with a cut-off frequency of 0.7 kHz.
[5]
Settling to these values is limited by 0.7 kHz low-pass filtering of analog output.
[6]
In steps of 0.02 %VDD.
[7]
Definition of errors is given in Section 12.
[8]
Based on a 3 standard deviation.
[9]
Room temperature is given for an ambient temperature of 25 C.
[10] Graph of angular error is shown in Figure 5.
1.40
1.35
|Δφang|
(deg)
1.10
(1)
(2)
0.75
0.65
0
−20
−16
−12.25
−1 0 1
12.25
20
16
α1 − α0 (deg)
001aal765
(1) 40 C to +160 C
(2) 40 C to +140 C
Fig 5.
Envelope curve for the magnitude of angular error
KMA221
Product data sheet
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KMA221
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Programmable angle sensor
Table 14. Dynamics
Characteristics are valid for the operating conditions, as specified in Section 9.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
until first valid result
-
-
5
ms
2.4
3.125
-
kHz
-
-
1.8
ms
ton
turn-on time
fupd
update frequency
ts
settling time
tcmd(ent)
enter command mode time after power-on
20
-
30
ms
trec(ov)
overvoltage recovery time
-
-
4
ms
Min
Typ
Max
Unit
after an ideal mechanical
angle step of 45, until 90 %
of the final value is reached
after overvoltage
Table 15. Digital interface
Characteristics are valid for the operating conditions, as specified in Section 9.
Symbol
Parameter
Conditions
VIH
HIGH-level input voltage
80
-
-
%VDD
VIL
LOW-level input voltage
-
-
20
%VDD
VOH
HIGH-level output voltage
IO = 2 mA
80
-
-
%VDD
VOL
LOW-level output voltage
IO = 2 mA
-
-
20
%VDD
Iod
overdrive current
absolute value for overdriving
the output buffer
-
-
20
mA
tstart
start time
LOW level before rising edge
5
-
-
s
tstop
stop time
HIGH level before falling edge
5
-
-
s
Tbit
bit period
the load capacitance limits the
minimum period
10
-
100
s
Tbit
bit period deviation
deviation between received
clock and sent clock
0.8Tbit
1Tbit
1.2Tbit
s
tw0
pulse width 0
0.175Tbit
0.25Tbit
0.375Tbit
s
tw1
pulse width 1
0.625Tbit
0.75Tbit
0.825Tbit
s
tto
time-out time
communication reset
guaranteed after maximum tto
-
-
220
s
ttko(slv)
slave takeover time
duration of LOW level for
slave takeover
1
-
5
s
ttko(mas)
master takeover time
duration of LOW level for
master takeover
0Tbit
-
0.5Tbit
s
tprog
programming time
for a single memory address
20
-
-
ms
tcp
charge pump time
waiting time after enabling the
non-volatile memory charge
pump clock
1
-
-
ms
Table 16. Internal capacitances
Characteristics are valid for the operating conditions, as specified in Section 9.
Symbol
Parameter
Min
Typ
Max
Unit
Cblock
blocking capacitance
[1]
50
100
150
nF
CL
load capacitance
[1]
1.1
2.2
3.3
nF
[1]
Conditions
Measured at 1 MHz.
KMA221
Product data sheet
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KMA221
NXP Semiconductors
Programmable angle sensor
12. Definition of errors
12.1 General
Angular measurement errors by the KMA221 result from linearity errors, temperature drift
errors and hysteresis errors. Figure 6 shows the output signal of an ideal sensor, where
the measured angle meas corresponds ideally to the magnetic field angle . This curve
represents the angle reference line ref() with a slope of 0.5 %VDD/degree.
φmeas
(deg)
φref(α)
180
α (deg)
001aag812
Fig 6. Definition of the reference line
The angular range is set to max = 180 and the clamping voltages are programmed to
V(CL)l = 5 %VDD and V(CL)u = 95 %VDD for a valid definition of errors.
12.2 Hysteresis error
The device output performs a positive (clockwise) rotation and negative (counter
clockwise) rotation over an angular range of 180 at a constant temperature.
The maximum difference between the angles defines the hysteresis error hys.
φmeas
(deg)
Δφhys
180
α (deg)
001aag813
Fig 7. Definition of the hysteresis error
Equation 1 gives the mathematical description for the hysteresis value hys:
 hys() =  meas(  180 ) –  meas(  0 )
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12.3 Linearity error
The KMA221 output signal deviation from a best straight line BSL, with the same slope as
the reference line, is defined as linearity error. The magnetic field angle is varied at fixed
temperatures for measurement of this linearity error. The output signal deviation from the
best straight line at the given temperature is the linearity error lin. It is a function of the
magnetic field angle  and the temperature of the device Tamb.
φmeas
(deg)
φBSL(α, Tamb)
φref(α)
Δφlin(α, Tamb)
180
α (deg)
001aag814
Fig 8. Definition of the linearity error
12.4 Microlinearity error
 is the magnetic field angle. If  = 1, the microlinearity error lin is the device output
deviation from 1.
φmeas
(deg)
φref(α)
Δφmeas = 1° + Δφμlin(α)
Δα = 1°
α (deg)
001aag815
Fig 9. Definition of the microlinearity error
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12.5 Temperature drift error
The temperature drift temp is defined as the envelope over the deviation of the angle
versus the temperature range. It is considered as the pure thermal effect.
φmeas
(deg)
Ty
Tx
Δφtemp
180
α (deg)
001aag816
Fig 10. Definition of the temperature drift error
Equation 2 gives the mathematical description for temperature drift value temp:
 temp() =  meas( , T x) –  meas( , T y)
(2)
with:
Tx: temperature for maximum meas at angle 
Ty: temperature for minimum meas at angle 
The deviation from the value at room temperature tempRT describes the temperature
drift of the angle, compared to the value, which the sensor provides at room temperature:
 temp
RT( ,
T amb) =  meas( , T amb) –  meas( , T RT)
(3)
with:
TRT: room temperature (25 C)
12.6 Angular error
The angular error ang is the difference between mechanical angle and sensor output
during a movement from 0 to 1. Here 0 and 1 are arbitrary angles within the angular
range. The customer initially programs the angle measurement at 0 at room temperature
and zero hour upon production. The angle measurement at 1 is made at any temperature
within the ambient temperature range:
 ang =   meas( 1 , T amb) –  meas( 0 , T RT)  –   1 –  0 
(4)
with:
0, 1: arbitrary mechanical angles within the angular range
meas(0, TRT): programmed angle at 0, TRT = 25 C and zero hour upon production
meas(1, Tamb): the sensor measures angle at 1 and any temperature within Tamb
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This error comprises non-linearity and temperature drift related to the room temperature.
|Δφang|
mang
|Δφang(peak)|
|Δφμlin + Δφtemp|RT|
−α*
α0 − 1° α0 + 1°
α0
+α*
α1
001aal766
Fig 11. Envelope curve for the magnitude of angular error
Figure 11 shows the envelope curve for the magnitude of angular error |ang| versus 1
for all angles 0 and all temperatures Tamb within the ambient temperature range. If 1 is
in the range of 1 around 0, |ang| has its minimum. Here only the microlinearity error
lin and the temperature drift related to the room temperature |tempRT| occurs. If 1
deviates from 0 by more than 1 in either direction, |ang| can increase. Slope mang
defines the gradient.
Equation 5 to Equation 8 express the angular error:
for |1  0|  1
 ang =  lin +  temp
(5)
RT
for 1 < |1  0| < *
 ang =  lin +  temp
RT
+ m ang    1 –  0 – 1 
(6)
RT 
(7)
for |1  0|  *
 ang =
  lin  2 +   temp
2
with:
 ang(peak) –  lin +  temp RT
 = ----------------------------------------------------------------------------------- +  0 + 1
m ang
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13. Programming
13.1 General description
The KMA221 provides an OWI to enable programming of the device which uses
pin OUT/DATA bidirectionally.
In general the device runs in analog output mode, the normal operation mode.
The embedded programming data configures this mode. After a power-on reset once time
ton has elapsed,it starts. In this mode, the magnetic field angle is converted into the
corresponding output voltage.
A second mode, the command mode enables programming. In this mode, the customer
can adjust all required parameters (for example zero angle and angular range) to meet the
application requirements. After enabling the internal charge pump and waiting for tcp,
the data is stored in the non-volatile memory. After changing the contents of the memory,
recalculate and write the checksum (see Section 13.4).
In order to enter the command mode, send a specific command sequence after
a power-on reset and during the time slot tcmd(ent). The external source used to send the
command sequence must overdrive the output buffers of the KMA221. In doing so,
it provides current Iod.
During communication, the KMA221 is always the slave and the external programming
hardware is always the master. Figure 12 illustrates the structure of the OWI data format.
write
IDLE
START COMMAND DATA BYTE 1 DATA BYTE 2 STOP
IDLE
read
IDLE
START COMMAND HANDOVER DATA BYTE 1 DATA BYTE 2 TAKEOVER STOP IDLE
001aag742
Fig 12. OWI data format
The master provides the start condition, which is a rising edge after a LOW level. Then
a command byte which can be either a read or a write command is sent. Depending on
the command, the master or the slave has to send the data immediately after the
command sequence. If there is a read command, an additional handover or takeover bit is
inserted before and after the data bytes. The master must close each communication with
a stop condition. If the slave does not receive a rising edge for a time longer than tto,
a time-out condition occurs. The bus is reset to the idle state and waits for a start condition
and a new command. This behavior can be used to synchronize the device regardless of
the previous state.
All communication is based on this structure (see Figure 12), even for entering the
command mode. The customer can access the non-volatile memory, CTRL1,
TESTCTRL0 and SIGNATURE registers (described in Section 13.5). Only a power-on
reset leaves the command mode. A more detailed description of the programming is given
in the next sections.
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13.2 Timing characteristics
As described in the previous section, a start and stop condition is necessary for
communication. The LOW-level duration before the rising edge of the start condition is
defined as tstart. The HIGH-level duration after the rising edge of the stop condition is
defined as tstop. These parameters, together with all other timing characteristics are
shown in Table 15.
tstart
tstop
001aag817
Fig 13. OWI start and stop condition
Figure 14 shows the coding of a single bit with a HIGH level of VIH and a LOW level of VIL.
Here the pulse width tw1 or tw0 represents a logic 1 or a logic 0 of a full bit period Tbit,
respectively.
bit = 0
bit = 1
Tbit
0.175
Tbit
0.375
0.625
tw0
0.825
tw1
0.25
0.75
001aag818
Fig 14. OWI timing
13.3 Sending and receiving data
The master has to control the communication during sending or receiving data.
The command byte defines the region, address and type of command the master
requests. Read commands need an additional handover or takeover bit. Insert this bit
before and after the two data bytes (see Figure 12). However the OWI is a serial data
transmission, whereas the Most Significant Byte (MSB) send at first.
Table 17.
Format of a command byte
7
6
5
4
3
2
1
0
CMD7
CMD6
CMD5
CMD4
CMD3
CMD2
CMD1
CMD0
Table 18.
Command byte bit description
Bit
Symbol
Description
7 to 5
CMD[7:5]
region bits
000 = 16-bit non-volatile memory
001 to 011 = reserved
100 = 16-bit register
101 to 111 = reserved
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Table 18.
Command byte bit description …continued
Bit
Symbol
Description
4 to 1
CMD[4:1]
address bits
0
CMD0
read/write
0 = write
1 = read
A more detailed description of all customer accessible registers is given in Section 13.5.
Both default value and the complete command including the address and write or read
request are also listed.
13.3.1 Write access
To write data to the non-volatile memory, enable the internal charge pump. Set bits
CP_CLOCK_EN and WRITE_EN and wait for tcp enables the internal charge pump.
Perform the following procedure for write access:
1. Start condition: The master drives a rising edge after a LOW level
2. Command: The master sends a write command (CMD0 = 0)
3. Data: The master sends two data bytes
4. Stop condition: The master drives a rising edge after a LOW level
Figure 15 shows the write access of the digital interface. The signal OWI represents the
data on the bus from the master or slave. The signals: master output enable and slave
output enable indicate when the master or the slave output is enabled or disabled,
respectively.
START
CMD7
CMD0
WDATA15
WDATA0
STOP
IDLE
master
output
enable
OWI
(2)
slave
output
enable
(1)
001aag743
(1) Missing rising edges generate a time-out condition and the written data is ignored.
(2) If the master does not drive the bus, the bus-pull defines the bus.
Fig 15. OWI write access
Note: As already mentioned in Section 13.1, use the write procedure to enter the
command mode. If command mode is not entered, communication is not possible and the
sensor operates in normal operation mode. After changing an address, the time tprog must
elapse before changing another address. After changing the contents of the non-volatile
memory, recalculate and write the checksum (see Section 13.4).
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13.3.2 Read access
To read data from the sensor, perform the following procedure:
1. Start condition: The master drives a rising edge after a LOW level
2. Command: The master sends a read command (CMD0 = 1)
3. Handover: The master sends a handover bit, that is a logic 0 and disables the output
after a three-quarter bit period
4. Takeover: The slave drives a LOW level after the falling edge for ttko(slv)
5. Data: The slave sends two data bytes
6. Handover: The slave sends a handover bit, that is a logic 0 and disables the output
after a three-quarter bit period
7. Takeover: The master drives a LOW level after the falling edge for ttko(mas)
8. Stop condition: The master drives a rising edge after a LOW level
Figure 16 shows the read access of the digital interface. The signal OWI represents the
data on the bus from the master or slave. The signals: master output enable and slave
output enable indicate when the master or the slave output is enabled or disabled,
respectively.
START
CMD7
CMD0
HANDSHAKE
RDATA15
RDATA0
HANDSHAKE
STOP
IDLE
master
output
enable
(3)
OWI
(5)
(1)
slave
output
enable
(2)
(2)
(4)
001aag744
(1) Duration of LOW level for slave takeover ttko(slv).
(2) The master output enable and the slave output enable overlap, because both drive a LOW level.
However this behavior ensures the independency from having a pull-up or pull-down on the bus. In
addition, it improves the EMC robustness, because all levels are actively driven.
(3) Duration of LOW level for master takeover ttko(mas).
(4) If the master does not take over, the pull-up generates the stop condition. Otherwise a time-out is
generated if there is a pull-down and the slave waits for a rising edge as start condition.
(5) If the master does not drive the bus, the bus-pull defines the bus.
Fig 16. OWI read access
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13.3.3 Entering the command mode
After a power-on reset, the sensor provides a time slot tcmd(ent) for entering the command
mode. Send a specific command sequence (see Figure 17). If command mode is not
entered, the sensor starts in the normal operation mode. If the sensor stays in the
diagnostic mode, the master can write the signature without a power-on reset.
During the command mode sequence, the analog output is enabled. The external
programming hardware has to overdrive the output with current Iod. If command mode is
activated, the analog output is disabled and pin OUT/DATA operates as a digital interface.
tcmd(ent)
VDD
OWI
START
94h
command
16h
F4h
STOP
signature
008aaa263
Fig 17. OWI command mode procedure
13.4 Cyclic redundancy check
As already mentioned in Section 7, there is an 8-bit checksum for the non-volatile memory
data. To calculate this value, the MSB of the memory data word generates the CRC at first
over all corresponding addresses in increasing order.
Read out all addresses from 8h to Fh for calculating the checksum. The Least Significant
Byte (LSB) of address Fh which contains the previous checksum must be overwritten with
0h before the calculation can be started.
Setting bits CP_CLOCK_EN and WRITE_EN (see Section 13.5.1) and waiting for tcp
enables the internal charge pump for programming.
The generator polynomial for the calculation of the checksum is:
8
2
G(x) = x + x + x + 1
(9)
With a start value of FFh and the data bits are XOR at the x8 point.
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Programmable angle sensor
13.4.1 Software example in C
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
41
#include <stdio.h.>
// calc_crc accepts unsigned 16-bit data in data
int calc_crc(int crc, unsigned int data)
{
const int gpoly = 0x107; // generator polynomial
int i;
//index variable
for (i = 15; i >= 0; i--)
{
crc <<= 1;
//shift left
crc = (int) ((data & (1u<<i))>>i);
// XOR of with generator polynomial when MSB(9) = HIGH
if (crc & 0x100) crc ^= gpoly;
}
return crc;
}
int main(void)
{
int crc, crc_res, i;
// 8 LSB are CRC field filled with 0
unsigned int data_seq[] = {0x0000, 0xFFC1, 0x0400, 0x0100,
0x1300, 0x0000, 0x0000, 0x0000};
// calculate checksum over all data
crc = 0xFF;
// start value of crc register
printf(“Address\tValue\n”);
for (i = 0; i <= 7; i++)
{
printf(“0x%1X\t0x%04X\n”, i, data_seq[i]);
crc = calc_crc(crc, data_seq[i]);
}
crc_res = crc;
// crc_res = 0xA9
printf(“\nChecksum\n0x%02X\n”, crc_res);
// check procedure for preceding data sequence
crc = 0xFF;
for (i = 0; i <= 6; i++)
crc = calc_crc(crc, data_seq[i]);
// last word gets crc inserted
crc = calc_crc(crc, data_seq[i]  crc_res);
printf(“\nCheck procedure for data sequence: must be 0x00 is 0x%02X.\n”, crc);
return 1;
}
The checksum of this data sequence is A9h.
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13.5 Registers
13.5.1 Command registers
To enter the command mode, write the signature given in Table 19 into the specific
register using the OWI. Do this procedure as described in Section 13.3.3, with a write
command, the signature follows it, but after a power-on reset and not later than tcmd(ent).
Table 19.
Command registers
Command Register
write/read
Bit
Access Field
Description
82h/83h
15
R
IN_DIAG_MODE
shows if there is a diagnostic condition present; the
setting of register field FORCE_DIAG_OFF does
not affect this bit
14
W
FORCE_DIAG_OFF
force diagnostic mode off; default: 0b
13
-
-
reserved
12
R
LOW_VOLTAGE_DET low voltage condition detected
11
R/W
CP_CLOCK_EN
charge pump clock enabled (must be set after
setting write enable signal for writing to non-volatile
memory); default: 0b
10 and 9 -
-
reserved
8
R
ERR_CORRECT
single-bit error of non-volatile memory has been
detected and corrected; updated every memory
readout; remains set until the diagnostic condition
disappears and a power-on reset is done
7
R
UNCORR_ERR
double-bit error of non-volatile memory has been
detected; updated every memory readout; remains
set until the diagnostic condition disappears and a
power-on reset is done
6
R
MAGNET_LOSS_DET magnet-loss detected; bit remains set until the
diagnostic condition disappears and a power-on
reset is done; enable magnet-loss detection for
entering diagnostic mode
5
R
BROKEN_BOND_DET broken bond wire detected; bit remains set until the
diagnostic condition disappears and a power-on
reset is done
4
R
CRC_BAD
checksum error detected; updated every start-up
3 to 0
-
-
reserved
CTRL1
94h/-
SIGNATURE 15 to 0
W
SIGNATURE
to enter command mode, write signature 16F4h
within tcmd(ent); for more details, see Section 13.3.3
96h/97h
TESTCTRL0 15 to 12
-
-
reserved
11
W
WRITE_EN
write enable signal; set before writing to
non-volatile memory; default: 0b
10 to 0
-
-
reserved
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13.5.2 Non-volatile memory registers
The device includes several internal registers which are used for customization and
identification.
The initial signature allows read access to all areas but only write access to customer
registers. Write accesses to reserved areas are ignored. Since these registers are
implemented as non-volatile memory cells, writing to the registers needs a specific time
tprog after each write access to complete.
As there is no check for the programming time, make sure that no other accesses to the
non-volatile memory are made during the programming cycle. Do not address
the non-volatile memory during the time tprog.
Note: Before data can be stored in the non-volatile memory, switch on the internal charge
pump for the programming duration by setting register CTRL1, bit 11 CP_CLOCK_EN and
register TESTCTRL0, bit 11 WRITE_EN. To calculate the checksum, read out and consult
register addresses 8h to Fh.
Table 20.
Non-volatile memory registers
Address Command Register
write/read
Bit
Description
Default
MSB/LSB
0h
-/01h
reserved
-
addresses are reserved for calibration purposes
[1]
1h
-/03h
2h
-/05h
3h
-/07h
4h
-/09h
5h
-/0Bh
6h
-/0Dh
7h
-/0Fh
8h
10h/11h
ZERO_ANGLE
15 to 0
mechanical zero degree position; see Table 21
00h/00h
9h
12h/13h
ANG_RNG_MULT_MSB 15 to 6
CLAMP_SW_ANGLE; when the measured angle
is bigger than CLAMP_SW_ANGLE the output
switches to CLAMP_LO for a positive slope;
see Table 26
FFh/C1h
5 to 0
Ah
14h/15h
ANG_RNG_MULT_MSB; most significant bits of
the angular range multiplicator; see Table 24
ANG_RNG_MULT_LSB 15 and 14 DIAGNOSTIC_LEVEL; diagnostic level behavior
of the analog output; see Table 25
04h/00h
00b — active LOW (in lower diagnostic range)
with driver strength of the analog output
01b — active HIGH (in upper diagnostic range)
with driver strength of the analog output
10b — reserved
11b — reserved
13
SLOPE_DIR; slope of analog output
0b — rising (not inverted)
1b — falling (inverted)
12 to 0
KMA221
Product data sheet
ANG_RNG_MULT_LSB; least significant bits of
the angular range multiplicator
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Table 20.
Non-volatile memory registers …continued
Address Command Register
write/read
Bit
Description
Default
MSB/LSB
Bh
15
0b — reserved
01h/00h
14 and 13
undefined[2]
16h/17h
Ch
18h/19h
CLAMP_LO
CLAMP_HI
12 to 0
lower clamping level; see Table 22
15 to 13
undefined[2]
12 to 0
upper clamping level; see Table 23
13h/00h
Dh
1Ah/1Bh
ID_LO
15 to 0
lower 16 bits of identification code
00h/00h
Eh
1Ch/1Dh
ID_HI
15 to 0
upper 16 bits of identification code
00h/00h
Fh
1Eh/1Fh
CTRL_CUST
15
LOCK; irreversible write protection of non-volatile 00h/[1]
memory
14 to 8
MAGNET_LOSS; magnet-loss detection
1b — enabled
00h — disabled
49h — enabled
7 to 0
[1]
Variable and individual for each device.
[2]
Undefined; write as zero for default.
CRC; checksum (see Section 13.4)
Table 21. ZERO_ANGLE - mechanical zero degree position (address 8h) bit allocation
Data format: unsigned fixed point; resolution: 216.
Bit
15
14
13
12
11
10
9
8
7
6
5
4
3
2
1
0
Value
21
22
23
24
25
26
27
28
29
210
211
212
213
214
215
216
Mechanical angular range 0000h = 0 to FFFFh = 180  1 LSB.
Examples:
• Mechanical zero angle 0 = 0000h
• Mechanical zero angle 10 = 0E38h
• Mechanical zero angle 45 = 4000h
Table 22. CLAMP_LO - lower clamping level (address Bh) bit allocation
Data format: unsigned integer (DAC values 256 to 4864); resolution: 20.
Bit
15
14
13
12
11
10
9
8
7
6
5
4
3
2
1
0
Value
0
U[1]
U[1]
212
211
210
29
28
27
26
25
24
23
22
21
20
[1]
Undefined; write as zero for default; returns any value when read.
Values 0 to 255 are reserved. It is not permitted to use such values.
Examples:
• 100 %VDD = 5120 (reserved)
• 10 %VDD = 512
• 5 %VDD = 256
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Table 23. CLAMP_HI - upper clamping level (address Ch) bit allocation
Data format: unsigned integer (DAC values 256 to 4864); resolution: 20.
Bit
15
14
13
12
11
10
9
8
7
6
5
4
3
2
1
0
Value
U[1]
U[1]
U[1]
212
211
210
29
28
27
26
25
24
23
22
21
20
[1]
Undefined; write as zero for default; returns any value when read.
Values 4865 to 5120 are reserved. It is not permitted to use such values.
Examples:
• 100 %VDD = 5120 (reserved)
• 95 %VDD = 4864
• 90 %VDD = 4608
Table 24. ANG_RNG_MULT_MSB - most significant bits of angular range multiplicator (address 9h) bit allocation
Data format: unsigned fixed point; resolution: 21.
Bit
15
14
13
Value
12
11
10
9
8
7
6
CLAMP_SW_ANGLE
5
4
3
2
1
0
24
23
22
21
20
21
CLAMP_HI – CLAMP_LO
180
ANG_RNG_MULT = -------------------------------------------------------------------  --------------------------------------------------8192
ANGULAR_RANGE
(10)
Examples:
•
4864 – 256 180
ANG_RNG_MULT = ---------------------------  ----------- = 0.5625
8192
180
•
4864 – 256 180
ANG_RNG_MULT = ---------------------------  ----------- = 1.125
8192
90
Table 25. ANG_RNG_MULT_LSB - least significant bits of angular range multiplicator (address Ah) bit allocation
Data format: unsigned fixed point; resolution: 214.
Bit
15
Value
[1]
14
V[1]
13
12
11
10
9
8
7
6
5
4
3
2
1
0
V[1]
22
23
24
25
26
27
28
29
210
211
212
213
214
Variable; depending on the setting of diagnostic level and slope of analog output.
CLAMP_HI – CLAMP_LO
180
ANG_RNG_MULT = -------------------------------------------------------------------  --------------------------------------------------8192
ANGULAR_RANGE
(11)
Table 26. CLAMP_SW_ANGLE - clamp switch angle (address 9h) bit allocation
Data format: unsigned fixed point; resolution: 210.
Bit
15
14
13
12
11
10
9
8
7
6
Value
21
22
23
24
25
26
27
28
29
210
5
4
3
2
1
0
ANG_RNG_MULT_MSB
Mechanical angular range 0000h = 0 to 3FFh = 180  1 LSB.
1
CLAMP_HI – CLAMP_LO
1
CLAMP_SW_ANGLE = ---   1 + --------------------------------------------------------------------  -----------------------------------------------
2 
8192
ANG_RNG_MULT
(12)
If the magnetic field angle is larger than the CLAMP_SW_ANGLE, the output switches to
CLAMP_LO for a positive slope. Program the value of CLAMP_SW_ANGLE, which can
be calculated from other non-volatile memory constants.
KMA221
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Programmable angle sensor
14. Electromagnetic compatibility
EMC is verified in an independent and certified test laboratory.
14.1 Emission (CISPR 25)
Tests according to CISPR 25 were fulfilled.
14.1.1 Conducted radio disturbance
Test of the device according to CISPR 25, third edition (2008-03), Chapter 6.2.
Classification level: 5.
14.1.2 Radiated radio disturbance
Test of the device according to CISPR 25, third edition (2008-03), Chapter 6.4.
Classification level: 5 (without addition of 6 dB in FM band).
14.2 Radiated disturbances (ISO 11452-1 third edition (2005-02),
ISO 11452-2, ISO 11452-4 and ISO 11452-5)
The common understanding of the requested function is that an effect is tolerated as
described in Table 27 during the disturbance. The reachable values are setup-dependent
and differ from the final application.
Table 27.
Failure condition for radiated disturbances
Parameter
Comment
Min
Max
Unit
Variation of output signal in analog
output mode
value measured relative to the
output at test start
-
0.9
%VDD
14.2.1 Absorber lined shielded enclosure
Tests according to ISO 11452-2, second edition (2004-11), were fulfilled.
Test level: 200 V/m; extended up to 4 GHz.
State: A.
14.2.2 Bulk-current injection
Tests according to ISO 11452-4, third edition (2005-04), were fulfilled.
Test level: 200 mA.
State: A.
14.2.3 Strip line
Tests according to ISO 11452-5, second edition (2002-04), were fulfilled.
Test level: 200 V/m; extended up to 1 GHz.
State: A.
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Programmable angle sensor
14.2.4 Immunity against mobile phones
Tests according to ISO 11452-2, second edition (2004-11), were fulfilled.
State: A.
Definition of Global System for Mobile Communications (GSM) signal:
• Pulse modulation: per GSM specification (217 Hz; 12.5 % duty cycle)
• Modulation grade:  60 dB
• Sweep: linear 800 MHz to 3 GHz (duration 10 s at 890 MHz, 940 MHz and 1.8 GHz
band)
• Antenna polarization: vertical, horizontal
• Field strength: 200 V/m during on-time [calibration in Continuous Wave (CW)]
In deviation of ISO 11452-2, a GSM signal instead of an AM signal was used.
14.3 Electrical transient transmission by capacitive coupling [ISO 7637-3,
second edition (2007-07)]
The common understanding of the requested function is that an effect is tolerated as
described in Table 28 during the disturbance.
Table 28.
Failure condition for electrical transient transmission
Parameter
Comment
Variation of output signal in analog value measured relative to the
output mode
output at test start
Min
Max
Unit
-
0.9
%VDD
Tests according to ISO 7637-3 were fulfilled.
Test level: IV (for 12 V electrical system).
Classification level: B for pulse Fast a, B for pulse Fast b.
15. ElectroStatic Discharge (ESD)
15.1 Human body model (AEC-Q100-002)
The KMA221 is protected up to 8 kV, according to the human body model at 100 pF and
1.5 k. This protection is ensured at all pins.
Classification level: H3B.
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Programmable angle sensor
15.2 Human metal model (ANSI/ESD SP5.6-2009)
The KMA221 is protected up to 8 kV, according to the human metal model at 150 pF and
330  inside the ESD gun. This test utilizes waveforms of the IEC 61000-4-2 standard on
component level. Apply the contact discharge in an unsupplied state at pins OUT/DATA
and VDD referred to GND which is connected directly to the ground plane.
Test setup: A.
Test level: 5.
15.3 Machine model (AEC-Q100-003)
The KMA221 is protected up to 400 V, according to the machine model. This protection is
ensured at all pins.
Classification level: M4.
All pins have latch-up protection.
15.4 Charged-device model (AEC-Q100-011)
The KMA221 is protected up to 750 V, according to the charged-device model. This
protection is ensured at all pins.
Classification level: C4.
16. Application information
9''
9''
5/H[W
.0$
),/7(5
IJ N+]
VWRUGHU
287'$7$
*1'
287'$7$
&/H[W
*1'
.0$
HOHFWURQLFFRQWUROXQLW
DDD
(1) Power-loss detection is only possible with a load resistance within the specified range connected to
the supply or ground line.
(2) The load capacitance between ground and analog output can be used to improve the
electromagnetic immunity of the device. A blocking capacitance to suppress noise on the supply
line of the device is integrated into the package and thus not required externally.
Fig 18. Application diagram of KMA221
KMA221
Product data sheet
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KMA221
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Programmable angle sensor
17. Test information
17.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q100 Rev-G - Failure mechanism based stress test qualification for
integrated circuits, and is suitable for use in automotive applications.
18. Marking
$
%
&
'
.0$
111111
;<<<=
&%96
SLQLQGH[
DDD
A: leading letters of type name
B: batch number
C: date code
X: product manufacturing code; m for manufacturing Manila [Assembly Plant Philippines (APP)]
YYY: day of year
Z: year of production (last figure)
D: additional marking
C: capacitor type (T: TDK)
B: burn-in information (0: without burn-in; 1: with burn-in)
V: IC version (1, 2, 3, ...)
S: development status (X: development; C: validated; blank: released)
Fig 19. Marking
KMA221
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Programmable angle sensor
19. Package information
19.1 Reading point position
%
$
$ %
UHDGLQJSRLQW
DDD
Dimensions in mm
Fig 20. Reading point position
19.2 Terminals
Lead frame material: CuZr with 99.9 % Cu and 0.1 % Zr.
KMA221
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Programmable angle sensor
20. Package outline
SIL4: plastic, single in-line package
SOT1188-1
B
E1
E
E2
q
p
A
C
HE2
HE1
p1
Q
A
(D5)
D3
(2)
D4
alignment
area(6)
D2
D
(D6 )
D1
pin 1 index
HE
gate area(1)
(1)
(2)
(L)
1
4
e
(3x)
b
(4x)
w B
z C
0
5
mm
C
10 mm
scale
Dimensions
Unit
burr side
A
max 2.05
nom 1.95
min 1.85
b
C(3)
D
D1
D2(1)
D3
0.85
0.80
0.75
0.30
0.27
0.24
11.15
11.00
10.85
10.62
10.47
10.32
7.81
1.7
1.6
1.5
D4 D5(4, ref) D6(ref) E
2.05
1.95
1.85
0.27
E1(5,6) E2
7.5
12.93 7.4
7.3
8.05
8.00
7.95
e
7.9
7.8 1.8
7.7
References
IEC
JEDEC
JEITA
SOT1188-1
---
---
---
s
0.95
0.90
0.85
0.2
HE
HE1
HE2 L(ref)
20.7
20.5
20.3
5.85
5.80
5.75
6.20
Note
1. Gate area, up to 0.2 mm protrusion possible at both sides.
2. Terminal and plastic uncontrolled in this area.
3. Burr not included.
4. Measured at the cutting edge of the fin radius.
5. Measured along the straight edge of the package above note 1.
6. Alignment area, up to 1.5 mm long rim break outs can reduce E1 dimension.
Outline
version
q
7.9
w
z
0.2 0.8
p
p1
Q
1.05
1.00
0.95
4.05
4.00
3.95
0.95
0.90
0.85
sot1188-1_po
European
projection
Issue date
12-05-14
12-08-20
Fig 21. Package outline SOT1188-1 (SIL4)
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Programmable angle sensor
21. Handling information
5
P
LQ
DDD
Dimensions in mm
(1) No bending allowed.
(2) Plastic body and interface plastic body - leads: application of bending forces not allowed.
Fig 22. Bending recommendation
22. Solderability information
The solderability qualification is according to AEC-Q100 Rev-G. Recommended soldering
process for leaded devices is wave soldering. The maximum soldering temperature is
260 C for maximum 5 s. Device terminals are compatible with laser and electrical
welding.
23. Revision history
Table 29.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
KMA221 v.1
20130716
Product data sheet
-
-
KMA221
Product data sheet
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Programmable angle sensor
24. Legal information
24.1 Data sheet status
Document status[1][2]
Product status[3]
Definition
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
Preliminary [short] data sheet
Qualification
This document contains data from the preliminary specification.
Product [short] data sheet
Production
This document contains the product specification.
[1]
Please consult the most recently issued document before initiating or completing a design.
[2]
The term ‘short data sheet’ is explained in section “Definitions”.
[3]
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
24.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product is
deemed to offer functions and qualities beyond those described in the
Product data sheet.
24.3 Disclaimers
Limited warranty and liability — Information in this document is believed to
be accurate and reliable. However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information. NXP Semiconductors takes no
responsibility for the content in this document if provided by an information
source outside of NXP Semiconductors.
In no event shall NXP Semiconductors be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation - lost
profits, lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
KMA221
Product data sheet
Suitability for use in automotive applications — This NXP
Semiconductors product has been qualified for use in automotive
applications. Unless otherwise agreed in writing, the product is not designed,
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors and its suppliers accept no liability for
inclusion and/or use of NXP Semiconductors products in such equipment or
applications and therefore such inclusion and/or use is at the customer's own
risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Customers are responsible for the design and operation of their applications
and products using NXP Semiconductors products, and NXP Semiconductors
accepts no liability for any assistance with applications or customer product
design. It is customer’s sole responsibility to determine whether the NXP
Semiconductors product is suitable and fit for the customer’s applications and
products planned, as well as for the planned application and use of
customer’s third party customer(s). Customers should provide appropriate
design and operating safeguards to minimize the risks associated with their
applications and products.
NXP Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default in the
customer’s applications or products, or the application or use by customer’s
third party customer(s). Customer is responsible for doing all necessary
testing for the customer’s applications and products using NXP
Semiconductors products in order to avoid a default of the applications and
the products or of the application or use by customer’s third party
customer(s). NXP does not accept any liability in this respect.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Terms and conditions of commercial sale — NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In case an individual
agreement is concluded only the terms and conditions of the respective
agreement shall apply. NXP Semiconductors hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 16 July 2013
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Programmable angle sensor
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Translations — A non-English (translated) version of a document is for
reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from competent authorities.
24.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
25. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
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Programmable angle sensor
26. Contents
1
1.1
1.2
2
3
4
5
5.1
6
7
7.1
7.2
7.3
7.4
7.5
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
General description . . . . . . . . . . . . . . . . . . . . . 1
Features and benefits . . . . . . . . . . . . . . . . . . . . 1
Pinning information . . . . . . . . . . . . . . . . . . . . . . 2
Ordering information . . . . . . . . . . . . . . . . . . . . . 2
Functional diagram . . . . . . . . . . . . . . . . . . . . . . 3
Functional description . . . . . . . . . . . . . . . . . . . 4
Angular measurement directions . . . . . . . . . . . 4
Analog output. . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Diagnostic features . . . . . . . . . . . . . . . . . . . . . . 6
CRC and EDC supervision . . . . . . . . . . . . . . . . 6
Magnet-loss detection . . . . . . . . . . . . . . . . . . . 6
Power-loss detection . . . . . . . . . . . . . . . . . . . . 6
Broken bond wire detection . . . . . . . . . . . . . . . 7
Low supply voltage detection and overvoltage
protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
8
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 8
9
Recommended operating conditions. . . . . . . . 9
10
Thermal characteristics . . . . . . . . . . . . . . . . . . 9
11
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 9
12
Definition of errors. . . . . . . . . . . . . . . . . . . . . . 13
12.1
General . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
12.2
Hysteresis error . . . . . . . . . . . . . . . . . . . . . . . 13
12.3
Linearity error . . . . . . . . . . . . . . . . . . . . . . . . . 14
12.4
Microlinearity error . . . . . . . . . . . . . . . . . . . . . 14
12.5
Temperature drift error . . . . . . . . . . . . . . . . . . 15
12.6
Angular error. . . . . . . . . . . . . . . . . . . . . . . . . . 15
13
Programming . . . . . . . . . . . . . . . . . . . . . . . . . . 17
13.1
General description . . . . . . . . . . . . . . . . . . . . 17
13.2
Timing characteristics . . . . . . . . . . . . . . . . . . . 18
13.3
Sending and receiving data . . . . . . . . . . . . . . 18
13.3.1
Write access . . . . . . . . . . . . . . . . . . . . . . . . . . 19
13.3.2
Read access . . . . . . . . . . . . . . . . . . . . . . . . . . 20
13.3.3
Entering the command mode . . . . . . . . . . . . . 21
13.4
Cyclic redundancy check . . . . . . . . . . . . . . . . 21
13.4.1
Software example in C . . . . . . . . . . . . . . . . . . 22
13.5
Registers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
13.5.1
Command registers . . . . . . . . . . . . . . . . . . . . 23
13.5.2
Non-volatile memory registers . . . . . . . . . . . . 24
14
Electromagnetic compatibility . . . . . . . . . . . . 27
14.1
Emission (CISPR 25) . . . . . . . . . . . . . . . . . . . 27
14.1.1
Conducted radio disturbance . . . . . . . . . . . . . 27
14.1.2
Radiated radio disturbance. . . . . . . . . . . . . . . 27
14.2
Radiated disturbances (ISO 11452-1 third
edition (2005-02), ISO 11452-2, ISO 11452-4
and ISO 11452-5). . . . . . . . . . . . . . . . . . . . . .
14.2.1
Absorber lined shielded enclosure. . . . . . . . .
14.2.2
Bulk-current injection . . . . . . . . . . . . . . . . . . .
14.2.3
Strip line . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
14.2.4
Immunity against mobile phones . . . . . . . . . .
14.3
Electrical transient transmission by capacitive
coupling [ISO 7637-3, second edition
(2007-07)] . . . . . . . . . . . . . . . . . . . . . . . . . . .
15
ElectroStatic Discharge (ESD) . . . . . . . . . . . .
15.1
Human body model (AEC-Q100-002) . . . . . .
15.2
Human metal model (ANSI/ESD SP5.6-2009)
15.3
Machine model (AEC-Q100-003). . . . . . . . . .
15.4
Charged-device model (AEC-Q100-011) . . . .
16
Application information . . . . . . . . . . . . . . . . .
17
Test information . . . . . . . . . . . . . . . . . . . . . . .
17.1
Quality information . . . . . . . . . . . . . . . . . . . . .
18
Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
19
Package information. . . . . . . . . . . . . . . . . . . .
19.1
Reading point position . . . . . . . . . . . . . . . . . .
19.2
Terminals . . . . . . . . . . . . . . . . . . . . . . . . . . . .
20
Package outline. . . . . . . . . . . . . . . . . . . . . . . .
21
Handling information . . . . . . . . . . . . . . . . . . .
22
Solderability information . . . . . . . . . . . . . . . .
23
Revision history . . . . . . . . . . . . . . . . . . . . . . .
24
Legal information . . . . . . . . . . . . . . . . . . . . . .
24.1
Data sheet status . . . . . . . . . . . . . . . . . . . . . .
24.2
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . .
24.3
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . .
24.4
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . .
25
Contact information . . . . . . . . . . . . . . . . . . . .
26
Contents. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
27
27
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32
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36
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2013.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 16 July 2013
Document identifier: KMA221
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